The invention relates to a P type lateral insulated gate bipolar device for reducing the hot carrier effect, comprising an N type substrate. Buried oxide is arranged on the N type substrate, an N type epitaxial layer is arranged on the buried oxide, a P type well and an N well region are arranged on the N type epitaxial layer, a P type buffer well is arranged on the P type well, an N type positive region is arranged on the P type buffer well, a P type negative region and an N type physical contact region are arranged on the N well region, and a field oxide, a metal layer, a gate oxide, a polysilicon gate and an oxide layer arranged on the surface of the device. The P type lateral insulated gate bipolar device for reducing the hot carrier effect is characterized in that N type buried layers are arranged at the lower part of the N well region and on the buried oxide, and the N type buried layers are partially inserted into the N type epitaxial layer to integrally form a reverse L type N region with the N well region. The structure can introduce the electronic current of the device to the bottom, reduce ion generation rate and longitudinal field of a channel region of the device, and lower the thermionic temperature, thereby effectively restraining the hot carrier effect of the device.