41 results about "Semiconduction" patented technology

The improved oil resistant semi-conductive cable shielding material consists of butadiene-acrylonitrile rubber or hydrogenated butadiene-acrylonitrile rubber 100 weight portions, conducting carbon black 50-80 weight portions, graphite powder 15-30 weight portions, plasticizer 15-20 weight portions, dithio tetramethyl thiram and alphatic polysulfide 1.0-3.0 weight portions, dibenzothiazole disulfide and zinc diethyl dithio amino formate 1.0-2.0 weight portions, zinc oxide and stearic acid 8.0-10.0 weight portions. Compared with available technology, the present invention has the advantages of excellent conductivity, volume resistivity not greater than 50 ohm.cm, high tensile strength up to 18 MPa, high oil resistance and other advantages.

The invention discloses a high voltage and supervoltage cross-linked polyethylene insulating submarine power cable with a single core. A metal shielding layer (8) of the cable is a lead sleeve shielding layer; and a copper wire sparse winding shielding (6), which is formed by copper wire leads, is arranged between a first semiconduction water blocking buffer layer (5) and the metal shielding layer (8). And a metal armor layer is composed of nonmagnetic non-ferrous metals. According to the invention, the cable has a good mechanical property and a good corrosion resistant performance; electromagnetic losses are small; and there is enough transient and short-circuit current capacity. Therefore, the cable provided in the invention is suitable for replacing a high voltage and supervoltage AC transmission oil impregnated paper insulating submarine power cable with a single core as well as can be laid in an adverse marine usage environment; moreover, the cable has good mechanical and applicable performances.

To provide a novel semiconductor device including an oxide semiconductor film. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second transistor includes a third oxide semiconductor film including a channel region, a source region, and a drain region over the second insulating film, a fourth insulating film over the channel region, a third gate electrode over the fourth insulating film, and the third insulating film over the source region and the drain region.

The invention relates to a kind of semiconduction mixture. Generate basic polymer by low-density polythene with 20-70 part by weight and other polyolefin polymer with 80-30 part by weight, and then cooperate semiconduction carbon black with 30-80 part by weight in this basic polymer with 100 part by weight.

The method selects hexagonal silicon carbide or relaxation iron electric material in semiconduction as ceramic basic material, selects low eutectic mixture consisting of copper oxide, aluminium oxide, magnesium oxide and silicon oxide as high insulation boundary phase to prepare boundary ceramic capacitor by one-time buring through utilizing article wrapping up technique to realize distributive homogenization for structure and phase.

The invention provides a flexible semiconductive shielding material and a preparation method of the flexible semiconductive shielding material. The flexible semiconductive shielding material comprises the following ingredients in parts by weight: 70-90 parts of EVA (ethylene vinyl acetute), 10-30 parts of SEBS (styrene ethylene-butylene styrene), 30-40 parts of high-conductivity carbon black, 0.5-1.5 parts of an antioxidant, 1.0-2.0 parts of a cross-linking agent DCP (dicumyl peroxide), 1.5-3.0 parts of a cross-linking assistant TAIC (triallylisocyanurate), and 1.0-2.5 parts of solid paraffin. The preparation method of the material comprises the following steps: (1) fusing and uniformly mixing EVA, the high-conductivity carbon black and the antioxidant in a high-temperature mixer, (2) adding an SEBS thermoplastic elastomer for fusing and uniform mixing, and (3) finally, adding the solid paraffin, the cross-linking agent DCP and the cross linkage assistant TAIC for fusing and uniform mixing, taking the material out of the mixer rapidly and cooling the room temperature. The semiconductive shielding material has flexibility and semiconduction functions.

The invention discloses an ultrahigh-voltage power cable with a smooth aluminum sheath. The ultrahigh-voltage power cable comprises a conductor, wherein an internal shielding layer, an insulation layer and an insulation shielding layer are arranged outside the conductor in an extruded way, a semiconduction buffer water blocking tape is arranged outside the insulation shielding layer, a smooth aluminum metal sleeve is arranged outside the semiconduction buffer water blocking tape, a corrosion-resistant asphalt layer is coated outside the smooth aluminum metal sleeve, a non-metal protection layer is arranged outside the corrosion-resistant asphalt layer, and a graphite coating layer is arranged outside the non-metal layer. From angles of cable bearing capability, material saving and cable running safety guarantee, the external diameter of the cable can be effectively reduced, the material consumption is reduced, the cable is compact in structure, the light design of the high-voltage cable is achieved, and meanwhile, the cable transmission quantity is also improved.

The invention discloses a method for reducing self-discharge rate of a high-nickel ternary lithium battery. The method comprises the steps of (a) adding barium hydroxide and sodium hydroxide into deionized water to prepare a mixed solution; (b) dropping titanium titanium tetrachloride into the mixed solution, transferring the mixture solution to a polytetrafluoroethylene lining, and performing hydrothermal reaction; (c) performing thermal processing after hydrothermal reaction is ended to prepare barium titanate; and (d) mixing the barium titanate, metal lithium, lanthanum oxide, yttrium oxide, bismuth oxide, antimony oxide, tantalum oxide and niobium oxide, and coating the mixture onto a negative current collector by flame, thereby reducing the self-discharge rate of the high-nickel ternary lithium battery. The method has the following beneficial effects that the barium titanate is flame-coated onto a surface of the current collector to form semiconduction ceramic, metal ions can be absorbed, the loss of electrode metal is prevented to a certain extent, and the self-discharge effect is further reduced.

The invention discloses a core wire structure for a medium-voltage power cable, which sequentially comprises (from inside to outside) a compressed conductor, a conductor semiconduction shielding layer, an insulating layer, an insulation semiconduction shielding layer, a metallic shielding layer, a belting layer and an outer sheath, wherein, the insulating layer is made from a water-resistant insulating material. The core wire structure solves the problem that the original cable insulation water-resistance of the medium-voltage XLPE insulated cable with water resistance must adopt a water-resistant filler layer and a fastening anticorrosive metal sleeve in a cable direction, thus greatly simplifying the structure of the medium-voltage XLPE insulated cable with water resistance, enhancing the production efficiency and greatly saving resources. The structure has the advantages of simple structure, less resource consumption, simplified manufacturing technique, improved service life, convenient laying and connection, lower total life cycle cost of the cable.

The invention discloses a manufacture method of a men-used condom with the self-erection skirt-shaped structure. The invention includes a cirque (2) and a conical structure (3) made by the metal conductive material or semiconduction material which is increased at the root of a hollow condom die (1) made of insulated material; the middle part of a condom die (1) is embedded with an electrically conductive ring-shaped coil (4); the cirque (2), the conical structure (3) and the ring-shaped coil (4) are connected with a lead (5) as the anode; furthermore, the deploying and retracting metal rod is taken as the cathode; the electricity is got through dipping into a rubber latex solution; after the colloidal particle is settled on the cirque (2), the conical structure (3) and the ring-shaped coil (4), the die is dipped into normal rubber latex solution or polyurethane solution; after drying and demoulding, a men-used condom (10) with a self-erection skirt-shaped structure (7) is obtained. The condom can more thoroughly isolate the flyblowing of the body fluid, thus preventing the sexual transmitted disease such as the AIDS, etc.

The invention relates to a bus terminal accessory of an ethylene-propylene insulation copper pipe, and belongs to the technical field of power equipment. The accessory comprises a hollow insulation pipe and semiconduction stress cones, wherein the semiconduction stress cones are arranged at one end of the insulation pipe and are in hollow truncated cone shapes, one end with a large radius of each semiconduction stress cone faces the insulation pipe, the semiconduction stress cones are wrapped by the insulation pipe, and a plurality of umbrella skirts are arranged on an outer surface of the insulation pipe. In the bus terminal accessory of the ethylene-propylene insulation copper pipe, provided by the invention, a liquid silicone rubber material is adopted, the accessory is formed by die pressing high-temperature curing, the semiconduction stress cones are overlapped with the insulation pipe to achieve an effect of uniform insulation shielding, and the radial field intensity and longitudinal field intensity of an insulation shielding opening can be perfectly uniform; the insulation layer is provided with umbrella skirts, the insulation problem of a voltage of a semiconduction outer side can be ensured very well by the insulation layer, and meanwhile, the voltage problem of the whole bus terminal is ensured; and the umbrella skirts are used for extending the creepage distance of a high potential and a low potential very well, and the subsequent process of a bus due to the creepage distance problem is saved.

The invention discloses a control cable for a nuclear power station. The control cable comprises a round reinforcement insulation tube, wherein a Y-shaped insulation partition plate is arranged in the reinforcement insulation tube, eight insulation partition plates are uniformly arranged on an outer wall of the insulation reinforcement tube in a radial way, three main wire cores are arranged between the Y-shaped insulation partition plate and an inner wall of the insulation reinforcement tube, and each main wire core comprises a main conductor and a trifluoropropyl silicone rubber insulation layer and a semiconduction shielding layer which sequentially wrap the main conductor. In the control cable, the Y-shaped insulation partition plate is arranged in the reinforcement insulation tube, the eight insulation partition plates are uniformly arranged on the outer wall of the insulation reinforcement tube in a radial way, the control cable has the advantages of simple structure, good insulation effect, good extrusion-resistant and tensile effect, low cost, high shielding anti-jamming ability, high weather resistance and multi-layer insulation and shielding, and is convenient to use and stable and reliable to work, a semiconduction expansion buffer layer is high in buffer shock-resistant effect.

The invention relates to a heat-shrinkable tube, in particular to a semiconduction double-wall heat-shrinkable tube and a preparation method thereof. The semiconduction double-wall heat-shrinkable tube consists of an outer wall material and an inner wall material, wherein the outer wall material comprises the following components in parts by weight: 70 parts of first polyolefin mixed resin, 20 parts of first auxiliary agent and 10 parts of conductive carbon black; and the inner wall material comprises the following components in parts by weight: 70 parts of second polyolefin mixed resin, 30 parts of second auxiliary agent and 10 parts of conductive carbon black. The preparation method comprises the following steps of: preparing the inner and outer wall material of the double-wall heat-shrinkable tube; extruding; irradiating; expanding; and molding. Compared with the traditional heat-shrinkable tubes, the double-wall heat-shrinkable tube has the technical characteristics that the inner wall material can be water proof and air-tight; the outer wall material maintains good properties of electrical properties, chemical properties, and the like of ordinary heat-shrinkable tubes, not only has all use properties of the ordinary heat-shrinkable tubes, but also has the properties of waterproofing, air-tightness, damp proofing, anticorrosion, and the like, completely meets the requirement on environmental protection of the ROHS (Restriction of the use of certain Hazardous Substances) instruction of EU (European Union) countries, and the like and has the advantages of low-temperature shrinking, stable expansion from three to four times, low longitudinal shrinkage rate, and the like.

The invention belongs to the technical field of ceramic materials, and particularly relates to an optical dielectric ferroelectric ceramic material as well as a preparation method and application thereof. The invention provides an optical dielectric ferroelectric ceramic material, the chemical general formula of the optical dielectric ferroelectric ceramic material is (1-x)(K0.5Na0.5)NbO3-xA(MyNb1-y) O3-delta, wherein x is 0.005-0.10, and y is 0.01-0.5, A is one or more of AII group elements, and M is one or more of transition metal elements. By introducing the transition metal, the band gap of the (K0.5Na0.5)NbO3 material is reduced, and semiconduction is realized, so that the optical dielectric ferroelectric ceramic material has high optical dielectric tuning rate, the dielectric constant of the optical dielectric ferroelectric ceramic material is changed during optical excitation, and non-contact regulation and control of light on the dielectric property of the optical dielectric ferroelectric ceramic material are realized.

The invention relates to a novel power cable structure belonging to the technical field of basic electronic components, and specifically relates to improvement of a power cable. The invention provides a novel power cable structure with low manufacturing cost and high environmental protection property. The novel power cable structure includes a central conductor layer, a semiconduction warping tape, an extruded semiconduction conductor shielding layer, a direct current insulating layer, an extruded semiconduction insulating and shielding layer, a first semiconduction waterproof buffer strip, a stainless protection layer, a second semiconduction waterproof buffer strip, a wrinkle copper sleeve, a polyethylene inner sheath, an armor layer and an oversheath. The novel power cable structure is characterized in that the external of the central conductor layer is successively provided with the semiconduction warping tape, the extruded semiconduction conductor shielding layer, the direct current insulating layer, the extruded semiconduction insulating and shielding layer, the first semiconduction waterproof buffer strip, the stainless protection layer, the second semiconduction waterproof buffer strip, the wrinkle copper sleeve, the polyethylene inner sheath, the armor layer and the oversheath, wherein the armor layer is formed by an inner layer plastic extrusion steel wire layer and an outer layer plastic extrusion steel wire layer.

The present invention discloses an anti-creeping aluminum alloy power cable with high performance. The anti-creeping aluminum alloy power cable comprises a drawing single aluminum alloy conductor and stranded aluminum alloy conductors; each stranded aluminum alloy conductor is extruded with a shielding layer, a silane crosslinking insulating layer, a semiconduction shielding layer and a lapping copper strip shielding layer to form shielding conductor units; each shielding conductor unit forms a cable core unit through stranding, and the cable core unit includes filler and nonhygroscopic flame retardation materials; and the interlock armour is performed on the cable core unit, and the outermost layer is extruded with an oversheath. The anti-creeping aluminum alloy power cable with high performance is able to improve the anti-creeping performance of the aluminum alloy stranded conductor in an originally created aluminum alloy core arrangement mode, a stranded mode and a heat treatment mode.

A film transistor includes a grating, a grating insulation layer, a semiconduction layer and a source/drain, in which, the grating is set on the base and includes at least a layer of AlYN alloy, the grating insulation layer is formed on the base covering the grating, the semiconduction layer is set on the grating insulation layer on the base, the source/drain is set on the semiconductor, which has a grating and source/drain of a low contact resistor or line resistor.

The invention discloses an anti-freezing and interference-resistant cross-linked polyethylene insulation variable-frequency power cable. The power cable comprises a cable core, wherein the cable core is formed by twisting a plurality of main wire cores and a grounding core, an anti-freezing and high-density polyethylene filling layer is arranged in a gap of the cable core, a wrapping tape is arranged outside the cable core, an anti-freezing and high-density polyethylene sheath is arranged outside the wrapping tape in an extruded way, each main wire core comprises a main wire core conductor, an internal shielding layer, an insulation layer, an insulation shielding layer, a semiconduction tape and a copper tape split-phase corrugated metal shielding layer, the internal shielding layer, the insulation layer and the insulation shielding layer are arranged outside the main wire core conductor in an extruded way, the semiconductor tape wraps the insulation shielding layer, and the copper tape split-phase corrugated metal shielding layer longitudinally wraps the semiconduction tape. By the power cable, a metal shielding mode is improved, a conventional copper tape or copper wire weaving net is change to split-phase copper tape longitudinal-wrapping welding corrugated shielding, an all-sealed metal layer structure is formed, so that an electromagnetic wave generated when the power cable is energized is completely shielded, and the anti-interference shielding effect is greatly improved.