430results about "Capacitor with voltage varied dielectric" patented technology

A dual-band antenna matching system and a method for dual-band impedance matching are provided. The method comprises: accepting a frequency-dependent impedance from an antenna; and, selectively supplying a conjugate impedance match for the antenna at either a first and a second communication band, or a third and a fourth communication band. More specifically, the method comprises: tuning a first tuning circuit to a first frequency; and, simultaneously tuning a second tuning circuit to a second frequency. In response, a conjugate match is supplied to the antenna in the first communication band in response to the first frequency. Simultaneously, the antenna is matched in the second communication band in response to the second frequency. When the first tuning circuit is tuned to a third frequency, and the second tuning circuit is tuned to a fourth frequency, then conjugate matches are supplied for the third and fourth communication bands, responsive to the third and fourth frequencies, respectively.

Tunable dielectric materials including an electronically tunable dielectric ceramic and a low loss glass additive are disclosed. The tunable dielectric may comprise a ferroelectric perskovite material such as barium strontium titanate. The glass additive may comprise boron, barium, calcium, lithium, manganese, silicon, zinc and / or aluminum-containing glasses having dielectric losses of less than 0.003 at 2 GHz. The materials may further include other additives such as non-tunable metal oxides and silicates. The low loss glass additive enables the materials to be sintered at relatively low temperatures while providing improved properties such as low microwave losses and high breakdown strengths.

A sub-band antenna matching method and an antenna matching system for selectively matching a communication bandwidth segment impedance have been provided. The method comprises: accepting a frequency-dependent impedance from an antenna; and, selectively supplying a conjugate impedance match for the antenna at a sub-band of a first communication band. In some aspects, the method selectively supplies a conjugate impedance match for the antenna at a sub-band of a second communication band. More specifically, the method comprises: tuning a first tuning circuit to a first frequency; simultaneously tuning a second tuning circuit to a second frequency to match the antenna at a low end of the first communication band. Likewise, the first tuning circuit is tuned to a third frequency and the second tuning circuit is tuned to a fourth frequency to match the antenna at a high end of the first communication band in response to the third and fourth frequencies.

A system and method is provided for full-duplex antenna impedance matching. The method comprises: effectively resonating a first antenna at a frequency selectable first channel in a first frequency band; generating a first antenna impedance at the first channel frequency; effectively resonating a second antenna at a frequency selectable second channel in the first frequency band; generating a second antenna impedance at the second channel frequency; supplying a first conjugate impedance match at the first channel frequency; and, supplying a second conjugate impedance match at the second channel frequency. For example, the first antenna may be used for transmission, while the second antenna is used for received communications. The antennas effectively resonant in response to: supplying frequency selectable conjugate impedance matches to the antennas; generating frequency selectable antenna impedances; and / or selecting the frequency of antenna resonance.

A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monitor circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a detecting circuit which detects a prescribed circuit constant of the monitor circuit, a storage which stores information relating to a reference circuit constant of the monitor circuit, and a capacitance control circuit which controls capacitance of the variable capacitors in the monitor circuit and capacitance of the variable capacitors in the filter circuit, based on a result detected by the detecting circuit and information stored in the storage.

A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

A variable capacitor device using MEMS or micromachining techniques wherein thin-films of materials are deposited, patterned and etched to form movable micromechanical elements on the surface of a substrate composed of either semiconductor, glass, metal, or ceramic material. In one embodiment of the present invention to achieve higher frequency performance as well as other benefits, the substrate is comprised of Low-Temperature Co-Fired Ceramics (LTCC). The variable capacitor is an electrostatically actuated micromechanical device and if fabricated on a LTCC multi-layered substrate material has continuous electrical connections through the layers. The same LTCC substrate material can also be used to enclose the device by selectively removing a portion of the upper substrate so as to form a cavity. The two substrates are then bonded together to enclose and protect the variable capacitor. An integrated circuit can be incorporation onto the multi-level substrate structure to enable a electronic closed-loop controlled variable capacitor module. The integrated circuit is flip-chip bonded at the bottom of the substrate structure with appropriate electrical connections between the integrated circuit and the MEMS variable capacitor device. A variation of the present invention utilizes a zipper actuation method wherein the tuning ratio of the variable capacitor is increased to very high levels. Yet another variation of the present invention utilizes a differential gap between the top and bottom electrodes such that the actuation electrodes do not physically contact one another. Yet another implementation of the present invention uses an extra set of electrodes or mechanical mechanism so as to lock the value of the capacitor indefinitely. Yet another implementation uses shaped actuation electrodes so as to linearize the relationship between the applied actuation voltage and the resultant capacitance of the device.

Micro-electro-mechanical system (MEMS) variable capacitors and actuation components and related methods are provided. A MEMS variable capacitor can include first and second feed lines extending substantially parallel to one another. Further, MEMS variable capacitors can include first and second capacitive plates being spaced apart from the first and second feed lines. The first and second capacitive plates can be separately movable with respect to at least one of the first and second feed lines for varying the capacitance between the first and second feed lines over a predetermined capacitance range.

The devices presented herein are capacitive sensors with single crystal silicon on all key stress points. Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices according to the invention, the pressure port is opposed to the electrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in plane acceleration and out of plane acceleration are also described. A third axis in plane is easy to achieve by duplicating and rotating the accelerometer 90 degrees about its out of plane axis Creating resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeticity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafer level packaging, small size, high performance and low cost.

A capacitive humidity sensor includes a detection portion and a reference portion. The detection portion includes detection electrodes and a moisture sensitive film. The reference portion includes reference electrodes and a moisture permeation film as a capacitance adjusting film. The capacitive humidity sensor detects humidity by converting a capacitance difference between a capacitance of the detection electrodes and a capacitance of the reference electrodes to an electric signal by using a capacitance-voltage conversion circuit. The moisture permeation film reduces offset voltage of the capacitive humidity sensor. Thus, an offset compensation circuit or the like is not required.

A system that incorporates teachings of the present disclosure may include, for example, a first solid electrode, a second electrode separated into subsections, and a dielectric medium separating the subsections from the first solid electrode, where the subsections of the second electrode include a first group of subsections and a second group of subsections, where the first group of subsections are connectable with a first terminal for receiving an input signal, and where the second group of subsections is connectable with a second terminal for providing an output signal. Other embodiments are disclosed.

A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monitor circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a detecting circuit which detects a prescribed circuit constant of the monitor circuit, a storage which stores information relating to a reference circuit constant of the monitor circuit, and a capacitance control circuit which controls capacitance of the variable capacitors in the monitor circuit and capacitance of the variable capacitors in the filter circuit, based on a result detected by the detecting circuit and information stored in the storage.

An embedded LSI includes a FeRAM macro block and an associated logic circuit section. A hydrogen barrier layer covers the FeRAM macro block as a whole and exposes the logic circuit section. The edge of the hydrogen barrier layer overlies the peripheral circuit of the FeRAM macro block and the boundary separating the FeRAM macro block from the logic circuit section. The ferroelectric capacitor is protected by the hydrogen barrier layer against hydrogen during a hydrogen-annealing process.

A memory cell includes a capacitor that includes a first metal layer and a second metal layer. The capacitor includes a ferroelectric layer disposed between the first metal layer and the second metal layer. The ferroelectric layer is a single layer of a bi-stable asymmetric crystalline material.

A phase shift device includes a planar transmission line that is formed by a signal electrode and a ground electrode which are separated by a dielectric substance, whereby the signal electrode of the planar transmission line is divided into several pieces and includes overlapping areas of adjacent pieces that are filled with a tunable liquid crystal material, thereby forming a dielectric tunable component (varactor) with a metal-insulator-metal type capacitor. The several pieces of the signal electrode are arranged at two or more different distance levels with respect to the ground electrode. The tunable liquid crystal material is arranged as a continuous layer between several pieces of the signal electrode that are arranged at two different distance levels.

A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.

Tunable dielectric materials including an electronically tunable dielectric ceramic and a low loss glass additive are disclosed. The tunable dielectric may comprise a ferroelectric perskovite material such as barium strontium titanate. The glass additive may comprise boron, barium, calcium, lithium, manganese, silicon, zinc and / or aluminum-containing glasses having dielectric losses of less than 0.003 at 2 GHz. The materials may further include other additives such as non-tunable metal oxides and silicates. The low loss glass additive enables the materials to be sintered at relatively low temperatures while providing improved properties such as low microwave losses and high breakdown strengths.

Method for fabricating a nonvolatile ferroelectric memory, including the steps of (1) forming an insulating layer, a semiconductor layer, an etch stop layer, a lower electrode, a ferroelectric layer, and an upper electrode on a substrate in succession, (2) forming an etch mask pattern of a required form on the upper electrode, (3) using the etch mask pattern as a mask in subjecting the upper electrode, the ferroelectric layer, the lower electrode, the etch stop layer, the semiconductor layer, and the insulating layer to en bloc etching, to expose the substrate, and (4) removing the etch mask pattern, and forming source / drain regions in the exposed substrate, whereby providing a simple fabrication process and permitting to minimize an alignment allowance.

Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.

Methods (100) are provided for fabricating a ferroelectric capacitor structure including methods (128) for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The methods comprise etching (140, 200) portions of an upper electrode, etching (141, 201) ferroelectric material, and etching (142, 202) a lower electrode to define a patterned ferroelectric capacitor structure, and etching (143, 206) a portion of a lower electrode diffusion barrier structure. The methods further comprise ashing (144, 203) the patterned ferroelectric capacitor structure using a first ashing process, performing (145, 204) a wet clean process after the first ashing process, and ashing (146, 205) the patterned ferroelectric capacitor structure using a second ashing process directly after the wet clean process at a high temperature in an oxidizing ambient.

A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.

MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.

An embodiment of the present invention provides a device, comprising a multilayered tunable dielectric capacitor, wherein said multilayers of tunable dielectric are adapted to be DC biased to reduce the dielectric constant; and wherein the DC bias is arranged so that the number of layers of tunable dielectric biased positively is equal to the number of layers of tunable dielectric biased negatively.

A capacitive humidity sensor includes a detection portion and a reference portion. The detection portion includes detection electrodes and a moisture sensitive film. The reference portion includes reference electrodes and a moisture permeation film as a capacitance adjusting film. The capacitive humidity sensor detects humidity by converting a capacitance difference between a capacitance of the detection electrodes and a capacitance of the reference electrodes to an electric signal by using a capacitance-voltage conversion circuit. The moisture permeation film reduces offset voltage of the capacitive humidity sensor. Thus, an offset compensation circuit or the like is not required.

A solid state Quantum high Energy density Storage Or Retrieval device known as a quensor, and the trademark ENSOR(TM), having an energy density of about 1-15 kwhr / kg, comparable to gasoline, or more, is described. A fundamentally new principle is employed: A quensor film comprises oriented molecules with donor and acceptor groups and with metal layers on its surfaces. A dipole electric field may be established in the gap between a donor and an acceptor. Electric energy is stored in or retrieved from dipole electric fields throughout the volume of the quensor film. Electric energy is stored in the quensor film by charging the dipole electric fields from an electric energy source. Electric energy is retrieved from a quensor film by discharging the dipole electric fields and supplying the energy to a load. Electric breakdown in the film is avoided because positive and negative electric charges in the film are balanced everywhere. Busbars attached to the metal layers are connected to terminals for charging or discharging the device. The manufacture of a quensor film is described. A composite photovoltaic and quensor panel for the storage or retrieval of solar-electric energy day or night on demand is also described.

The production of low-loss, tunable composite ceramic materials with improved breakdown strengths is disclosed. The composite materials comprise ferroelectric perovskites such as barium strontium titanate or other ferroelectric perovskites combined with other phases such as low-loss silicate materials and / or other low-loss oxides. The composite materials are produced in sheet or tape form by methods such as tape casting. The composite tapes exhibit favorable tunability, low loss and tailorable dielectric properties, and can be used in various microwave devices.

An embodiment of the present invention provides an apparatus, comprising at least one anti-parallel pair VVC network comprised of two parallel VVCs with one biased in the opposite polarity of the other and at least one anti-series VVC network comprised of two VVCs configured in series, one biased in the opposite polarity of the other such that the resulting AC capacitive variations produce a desired capacitance variation.