53results about "Capacitor with temperature varied dielectric" patented technology

A device for varying the capacitance of an electronic circuit is disclosed. The device comprises a flexible membrane located above the electronic circuit, a metal layer connected to the flexible membrane, and bias circuitry located above the membrane. Variation of the capacitance of the electronic circuit is obtained by pulling the membrane upwards by means of the bias circuitry. The disclosed device provides a sizeable capacitance variation and high Q factor, resulting in overall low filter insertion loss. A nearly constant group delay over a wide operating bandwidth is also obtained.

A variable capacitance element includes a movable element provided above a substrate using supporting portions and support beams so as to be displaced from the substrate. An insulating film and a movable electrode are provided on a conductor facing surface of the movable element. A driving electrode is arranged to displace the movable element, between a signal cutoff position and a signal passage position, whereby a high frequency signal transmitted through a transmission line is cut off or allowed to pass. The insulating film uses compressive stress to warp the movable element and the movable electrode in a direction of warping in a convex form toward the transmission line, and maintains this warping direction.

One embodiment of an improved energy conversion and storage system uses pre-charge-enabled energy-converting variable capacitors that can be substantially encapsulated in asphalt roads or streets. Another embodiment can be substantially encapsulated in concrete walls or rooftops. Radiant solar energy does work on temperature-sensitive capacitors. Temperature change, in one embodiment, modifies the capacitance of the previously pre-charged capacitor, thereby converting solar energy into increased electrical energy available for practical use, without needing parabolic reflectors and without needing any moving parts. Other embodiments are described and shown.

A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.

A capacitance temperature sensor in which temperature is measured by detecting capacitance of a parallel plate condenser which comprises a dielectric material comprising strontium titanate single crystal in which (a) 30% by weight or less of oxygen-16 or (b) 30% by weight to 50% by weight of oxygen-16 is substituted with oxygen-18 isotope.

The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (∈r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types. Advantageous embodiments feature high-tuning ratio, small device area, and stable capacitance value in case the temperature is well controlled. The invention further relates to a semiconductor device comprising the electronic device in accordance with the invention, to an electronic circuit comprising such electronic device, and to a method of manufacturing such electronic device.

Embodiments of a method include forming a metal-insulator-metal (MIM) capacitor including a first electrode and a second electrode and an insulator layer between the first and second electrodes, the MIM capacitor also including a reactive layer; and altering the reactive layer to change a capacitive value of the MIM capacitor.