The utility model discloses a variable
capacitance diode, and relates to the technical field of diodes, the variable
capacitance diode comprises a substrate, a channel layer, a
barrier layer and a cap layer, the channel layer, the
barrier layer and the cap layer are sequentially stacked on the substrate, two-dimensional
electron gas is formed at the interface of the channel layer and the
barrier layer, the cap layer is divided into a first region and a second region, and the first region and the second region are arranged on the substrate. The first region is provided with a
cathode, and the
cathode and the second region are provided with
passivation layers; the
passivation layer in the second region is etched and sequentially penetrates through the cap layer and the barrier layer until the interior of the channel layer is exposed, so that the bottom wall of a formed
etching groove is located in the channel layer, and the included angle between the side wall of the
etching groove and the bottom wall is an obtuse angle; and anodes are arranged on the bottom wall and the side wall of the
etching groove and on the
passivation layer in the second region. The variable
capacitance diode not only can enlarge the variable capacitance range, but also can realize large-range stable capacitance change.