74 results about "Varicap" patented technology

The invention relates to a reconfigurable dual-mode leaky-wave antenna with global scanning capability and a reconfiguration method, the leaky-wave antenna comprises a double-layer slow-wave waveguide structure formed by an upper metal conductor and a lower metal conductor, and the upper metal conductor and the lower metal conductor are separated by a dielectric substrate; the double-layer slow-wave waveguide structure comprises a plurality of periodic units, and a plurality of T-shaped structures with opposite directions are processed on upper and lower layers of metal conductors of each periodic unit to form a plurality of grooves; a variable capacitance diode is embedded into the tail end of a slot arm of the upper-layer metal conductor and is electrically connected with the lower-layer metal conductor through a metal via hole, and a closed loop is formed between the upper-layer metal conductor and the lower-layer metal conductor; a plurality of elliptical radiation patches are arranged at the top of a slot arm of the lower metal conductor at intervals and used for radiation leakage of the slow wave waveguide, and continuous frequency scanning covering 180 degrees is achieved; according to the invention, two modes of frequency scanning and fixed-frequency scanning are fused, 180-degree global scanning can be realized in any frequency reconfigurable interval, and beams can be flexibly reconstructed through multiple control strategies under a fixed-frequency condition.

The invention discloses a linear polarization scattering reconfigurable array antenna, which belongs to the technical field of antenna manufacturing and comprises an antenna unit, an extension socket, a transmission type phase shifter and an inductor. The antenna unit comprises a radiation patch, a first dielectric substrate, a metal via hole, a metal patch, a second dielectric substrate, a perforated metal floor, a third dielectric substrate, a feed metal column and a radio frequency coaxial connector, the radio frequency coaxial connector is connected with the radiation patch through the feed metal column, and a variable capacitance diode and a capacitor are arranged on the transmission type phase shifter. The transmission type phase shifter is connected with the radiation patch through the feed metal column, the variable capacitance diode is connected with the punching metal floor, the bottom of the third dielectric substrate is provided with a direct current bias line, the direct current bias line is connected with the transmission type phase shifter through the inductor, and the transmission type phase shifter is connected with the radiation patch through the feed metal column. According to the invention, flexible regulation and control of antenna scattering beams can be realized, and the antenna has the characteristics of flexible control, fast response speed and high radiation efficiency.

A nonlinear transmission line (NLTL) comprises a plurality of interconnected transmission line cells, each including a shunt path and a transmission line length wherein the shunt path includes a varactor diode and an inductor coupled in series with the varactor diode. A shunt path transmission line may be coupled in the shunt path and one or more filters may be coupled to an input and / or an output of the NLTL.

The invention belongs to the technical field of integrated circuits, and discloses a high-selectivity constant-bandwidth reconfigurable filter chip based on a GaAs (gallium arsenide) process, which comprises a dielectric substrate, a multilayer metal structure, a plurality of folded opening-shaped metal microstrip lines, a plurality of grounding metal columns, a variable capacitance diode, an MIM (metal injection molding) capacitor and the like. Resonance is realized in a mode of combining electric coupling and magnetic coupling, a variable capacitance diode is utilized to tune the center frequency, and the bandwidth is kept constant in the tuning process. Transmission zeros are introduced at two sides of a passband through cross coupling, so that the frequency selectivity and the spectrum management capability are remarkably improved, and meanwhile, the optimization of the microstrip interconnection structure effectively reduces the system loss. According to the invention, the strict requirements of a modern radio frequency communication system on miniaturization, high performance and high selectivity can be met, and extremely high adjustability and adaptability are achieved.

This application discloses an intelligent reflective surface and a covert communication system, belonging to the field of wireless communication technology. The intelligent reflective surface includes multiple intelligent reflective surface units arranged in an array; each intelligent reflective surface unit includes: a first substrate, a second substrate, and a third substrate; a metal patch and a varactor diode, located on the side of the third substrate opposite to the second substrate; the metal patch includes a first patch and a second patch, and the varactor diode is located between the first patch and the second patch, with its negative and positive terminals electrically connected to the first patch and the second patch, respectively; a metal ground plane, located between the first substrate and the second substrate; a first bias line and a second bias line, located on the side of the first substrate opposite to the second substrate; the first bias line is electrically connected to the metal ground plane and the first patch, respectively, and the second bias line is electrically connected to the second patch. This application can achieve precise control of electromagnetic waves, reduce electromagnetic energy loss, improve energy transmission efficiency, suppress electromagnetic wave leakage, and improve communication covertness.

The application discloses a multi-mode absorbing frequency selective surface with adjustable wave absorbing capacity, which comprises a metal pattern layer, a first dielectric substrate, a metal back plate, a second dielectric substrate and a metal feed line layer arranged in sequence from top to bottom, wherein the metal pattern layer comprises a plurality of metal unit structures arranged in an array, each metal unit structure comprises a polygonal metal sheet located at the center of the unit, metal bands extending from the periphery of the polygonal metal sheet, and metal arms extending from the four corners of the unit, the metal arms comprise two independent metal structures, the polygonal metal sheet and the metal bands are connected to each other through a first varactor diode, the two independent metal structures are connected to each other through a second varactor diode, and the metal arms in adjacent metal unit structures jointly form a new rotating cross structure. The independent feed line network is built through the metal through hole, so that the structure is divided into two independently regulated parts, and the whole has single and double adjustable wave absorbing modes.

A varactor-tunable radio frequency (RF) resonant circuit is disclosed. The circuit includes a planar impedance-controlled transmission line disposed on a dielectric substrate, and a voltage-controlled varactor diode, or an arrangement of parallel varactor diodes, electrically connecting a resonator of the planar transmission line to a reference node. The resonator can have a stepped impedance. A frequency of the resonator is tunable by configuration of a reverse bias voltage applied to the first plurality of voltage-controlled varactor diodes.

Embodiments herein disclose an inductor-capacitor voltage controlled oscillator (LC-VCO) circuit. The LC-VCO circuit includes: an LC tank circuit including a center tap inductor connected in parallel with a capacitor bank without a varactor, where the LC tank circuit resonates to generate an oscillation voltage; and a control circuit connected to a varistor capacitance circuit, where the varistor capacitance circuit includes a varistor based on a voltage controlled transistor in series with at least one capacitor, the varistor capacitance circuit is connected in parallel with the LC tank circuit and connected to a negative transconductance circuit. The control circuit includes an error amplifier and a conversion circuit, and is configured to generate an output control voltage based on an input phase-locked loop (PLL) control voltage that controls a capacitance value of the varistor capacitance circuit through the variable resistor.

Described herein are switches with asymmetrical anti-series varactor pairs to improve switching performance. The disclosed switches can include asymmetrical varactor pairs to reduce distortions. The asymmetry in the varactor pairs can be associated with geometry of each varactor in the pair. The disclosed switches can stack both symmetrical and asymmetrical varactor pairs. The disclosed switches with asymmetrical anti-series varactor pairs can be configured to improve both H2 and H3 simultaneously.

The application belongs to the microwave and millimeter wave technology and particularly relates to a substrate integrated waveguide electrically tunable concave type equalizer based on a varactor diode and a PIN diode, which comprises an SIW body, a gradually changing transition line and a 50Ω microstrip line. A rectangular area is arranged on the SIW body, four edges of the rectangular area adopt a groove structure, a plurality of resonance units are arranged on the grooves along two opposite long edges of the rectangular area at equal intervals, and capacitors are arranged on the grooves along two opposite wide edges of the rectangular area at equal intervals, so that the insertion loss at different frequencies is compensated to different degrees to realize the equalization effect. In the resonance unit, two chip capacitors introduced in the first adjusting structure cooperate with gold wires or inductors to realize the direct current blocking and alternating, PIN diodes introduced in the second adjusting structure replace microwave resistors to control the depth of the concave pits, and a reverse direct current voltage is applied to the varactor diode in the third adjusting structure to change the capacitance value of the varactor diode, so that the frequency of the concave pits is changed.

This disclosure relates generally to metasurface beam steering antenna and method of setting antenna beam angle. Conventional approaches perform electronically beam steering using phase array which requires bandwidth with higher data rates. The present disclosure enables metasurface antennas tilt antenna beam in a given direction, where the varactor diodes are operated in reverse bias so that different values of capacitors combination lead to electronic beam scanning. The processor of the metasurface beam steering antenna receives a command having an input angle to tilt the angle beam position. The processor processes the command by mapping the input angle with the set of c-shaped copper patch combination having the capacitor values using a predefined lookup table for setting the antenna beam angle based on a reference voltage generated by the varactor diode. The lookup table is iteratively updated with the capacitor values of the c-shaped copper patches.

An antenna tuner receives outputs of detectors coupled to an input and / or an output of each power amplifier (PA) of a plurality of PAs of a multiple antenna system. A processor of the antenna tuner is configured to process the detector outputs and to generate at least one of a gm gate bias value and a cascode gate bias value to be applied to gm and cascode gates, respectively, of a last stage of each of the PAs to change the shape of an input amplitude-to-output amplitude (AM-AM) response of each of the PAs independently of one another. The processor can also be configured to process the detector outputs to generate a varactor bias value to be applied to a terminal of a varactor of each of the PAs to change the shape of an input amplitude-to-output phase shift (AM-PM) response of each of the PAs independently of one another.

The invention discloses a super-surface based on a variable capacitance diode and a resonant cavity antenna. The super-surface comprises a super-surface unit, a first middle layer dielectric plate, a third metal isolation plate and a second middle layer dielectric plate of the metasurface unit form a middle layer; an upper layer dielectric plate, the middle layer and a lower layer dielectric plate are arranged in sequence, and gaps are formed between the upper and lower layer dielectric plates and the middle layer; the radiation patch and the first metal isolation plate are respectively arranged on two side surfaces of the upper dielectric plate, and the first metal isolation plate is opposite to the middle layer; the receiving patch and the second metal isolation plate are respectively arranged on two side surfaces of the lower dielectric plate, and the second metal isolation plate is opposite to the middle layer; the middle-layer dielectric plate is provided with a high-frequency connection path, the high-frequency connection path comprises a pair of trapezoidal metal patches which are oppositely arranged at intervals, the short edges of the trapezoidal metal patches are opposite, and a variable capacitance diode is connected in a gap between the short edges; and the direct-current feed line is connected with the high-frequency connection path to carry out direct-current feed on the variable capacitance diode. The metasurface can realize beam regulation and control of the resonant cavity antenna.

The application relates to a linearly polarized in-band co-polarized scattering reconfigurable array antenna, which comprises antenna modules arranged in an array by a plurality of same antenna units. Each antenna unit adopts a multi-layer stacked structure: from top to bottom, a radiation patch, a first dielectric substrate, a metal patch, a second dielectric substrate, a metal ground plate and a third dielectric substrate are sequentially arranged. A plurality of metalized through holes are arranged on the center line of the first dielectric substrate, and the metalized through holes, the metal patch and the metal ground plate jointly form a resonator. Each unit is also integrated with a reflective phase shifter, which comprises a microstrip transmission line, a feeding metal column, a metal short circuit column and a varactor diode. The feeding metal column penetrates through the layers and is connected with the radiation patch, and the metal short circuit column is connected with the metal ground plate. The varactor diode receives external control through a direct current bias line, the reflection phase of the unit is adjusted by changing the bias voltage, and the in-band co-polarized scattering reconfigurable function of the antenna is realized. The device can realize flexible regulation and control of a wide range and low coupling of scattering characteristics while maintaining high stable radiation characteristics.

The invention relates to the technical field of integrated circuits, in particular to a self-adaptive high-frequency resonant magnetic isolation solid-state switching circuit which comprises a driving circuit, a high-frequency resonant circuit and an output stage circuit. The driving circuit is used for driving the high-frequency resonance circuit; the high-frequency resonance circuit comprises a variable capacitance array C1, a capacitor C2, a transformer T1 and a diode D1; wherein the variable capacitance array C1 is used for eliminating the influence of input voltage change on output voltage and is composed of variable capacitance diode units connected in parallel and a capacitor C3 connected in parallel; the output stage circuit is used for outputting the voltage signal generated by the high-frequency resonance circuit; according to the invention, oscillator driving and variable capacitance array high-frequency resonance magnetic isolation circuit design is adopted; the variable capacitance array can restrain the large fluctuation of the output voltage along with the input voltage, the oscillator drive can effectively reduce the overall size of the circuit, and a fast turn-off circuit is designed in a matched mode, so that the turn-off time of the switch is further shortened.

The invention relates to the technical field of power filters, in particular to a self-adaptive variable-frequency insertion loss adjusting power filter. According to the technical scheme, the self-adaptive variable-frequency insertion loss adjusting power filter comprises a resonance induction and frequency acquisition module and a resonance parameter matching and optimizing module, according to the invention, the frequency self-adaptive tracking of the resonance circuit is realized through the resonance parameter matching and optimizing module, and the capacitor array adjusting unit adopts a voltage-controlled variable capacitance diode array; the inductance compensation unit utilizes an MEMS adjustable inductor to change the inductance value through a driving coil, and when the resonance induction module captures the frequency change, the control module immediately calls a pre-stored resonance fingerprint database, generates an adjusting instruction through a PID controller, and drives a variable capacitance diode and the MEMS inductor to synchronously adjust, so that the resonance frequency is always kept synchronous with the power supply frequency; and the efficiency of the filter at a high frequency band is effectively improved.

This disclosure relates generally to a composite reconfigurable intelligent surface system for real time beam steering and method thereof. Conventional method for real time beam steering includes bulky systems with several antenna elements and amplifiers to shape and control the beam. The present disclosure provides a composite reconfigurable intelligent surface (CRIS) for real time beam steering. The CRIS is formed from a set of constituent reflecting surfaces which in turn are generated from unit cells. These unit cells are responsible for providing individual phase reflection performance utilizing the installed varactor diode in each unit cell. The CRIS can provide a) multi-beam reflection performance, b) polarization sensitive operation, c) 2D beam steering abilities, d) real-time beam control, e) null point reduction for beam shaping requirements and f) dependable pattern stability over a suitable range of frequencies.

The invention relates to the field of semiconductor device manufacturing, and particularly provides a semiconductor structure, a preparation method and a wafer. The epitaxial layer is located on the substrate and has a first doping type; the first insulating layer is located on the epitaxial layer; the second insulating layer is located on the epitaxial layer; the first open groove and the second open groove are located in the second insulating layer and are transversely separated from each other, the first open groove is exposed out of the first insulating layer, and the second open groove is exposed out of the epitaxial layer; the metal layer is located in the first slot; and the well region is located in the second slot. According to the invention, the capacitance regulation and control range of the variable capacitance diode can be widened, the process difficulty is low, and the possible adverse effects of high-concentration ion implantation on the substrate and the dielectric layer can be remarkably reduced.

This invention discloses an active frequency selective surface with a steep passband edge drop and polarization stability, belonging to the field of microwave device technology. The structure comprises periodically arranged unit cells, each employing a three-layer symmetrical configuration, including a top and bottom layer of identical square annular aperture metal patch, a middle layer of cross-shaped mesh metal patch, and an interlayer dielectric substrate. Multiple varactor diodes are symmetrically integrated within the square annular aperture. By continuously adjusting their reverse bias voltage, the junction capacitance is changed, thereby achieving continuous and smooth tuning of the center resonant frequency within the range of 7.75 GHz to 11.2 GHz. This invention achieves a rapid passband edge drop over a wide tuning range through the coordinated resonance of a multi-layered symmetrical structure. The transition band width from -3 dB to -10 dB does not exceed 0.6 GHz, while also exhibiting excellent polarization independence and angular stability, making it suitable for high-performance applications requiring dynamic frequency selection, such as microwave communication and radar detection.

The application discloses a linear polarization scattering reconfigurable array antenna and belongs to the technical field of antenna manufacturing, which comprises an antenna unit, an array plug, a transmission type phase shifter and an inductor, wherein the antenna unit comprises a radiation patch, a first dielectric substrate, a metal via, a metal patch, a second dielectric substrate, a perforated metal floor, a third dielectric substrate, a feeding metal column and a radio frequency coaxial connector; the radio frequency coaxial connector is connected with the radiation patch through the feeding metal column; the transmission type phase shifter is provided with a varactor diode and a capacitor and is connected with the radiation patch through the feeding metal column; the varactor diode is connected with the perforated metal floor; the bottom of the third dielectric substrate is provided with a direct current bias line; the direct current bias line is connected with the transmission type phase shifter through the inductor; and the transmission type phase shifter is connected with the radiation patch through the feeding metal column. The application can realize flexible regulation and control of the antenna scattering beam and has the characteristics of flexible control, fast response speed and high radiation efficiency.

The invention discloses an adjustable metamaterial composite structure based on a microstrip line. The adjustable metamaterial composite structure comprises the microstrip line, a chip inductor, a variable capacitance diode, a magnetic bead and a resistor, the left side part and the right side part of the central conduction band of the microstrip line are respectively and periodically provided with mechanical through holes which are through up and down; the chip inductors are inserted into the mechanical through holes and are communicated with the central conduction band of the microstrip line and the grounding plate; the middle part of a central conduction band of the microstrip line is periodically engraved with double slits, the variable capacitance diodes cross each slit of the double slits and are communicated with the central conduction band of the microstrip line, the cathodes of the two variable capacitance diodes cross the double slits are opposite to each other, and a circuit for applying direct current voltage to the variable capacitance diodes is arranged between the cathodes of the two variable capacitance diodes; the middle part of the central conduction band of the microstrip line is arranged between the two slits and is also provided with a mechanical through hole penetrating up and down, and the magnetic bead is inserted into the mechanical through hole and is communicated with the central conduction band of the microstrip line and the grounding plate; the two tunneling peak frequencies of the adjustable metamaterial composite structure based on the microstrip line can be regulated and controlled through external voltage.

The invention belongs to the technical field of semiconductor manufacturing, and provides a multi-groove multi-ring-region variable capacitance diode and a preparation method thereof, an N-type epitaxial layer of the diode is provided with a main junction, grooves and a plurality of ring regions, and the main junction is arranged on the N-type epitaxial layer and located at the center of the N-type epitaxial layer; a lightly doped N-region, a doped P region and a first heavily doped P + region are sequentially formed on the main junction from bottom to top; the trenches are arranged on the N-type epitaxial layer at intervals by taking the main junction as the center, and the trench on the outermost side penetrates through the N-type epitaxial layer and extends to the N + substrate; the groove is filled with metal or polycrystalline silicon; the ring regions are arranged on the N-type epitaxial layer and located between the grooves and between the grooves and the main junction, a lightly doped P-region and a second heavily doped P + region are sequentially formed in each ring region from bottom to top, and the ring region located on the innermost side is connected with the main junction. The reverse voltage endurance capability of the chip can be improved by arranging the multiple ring regions, meanwhile, the main junction region is connected with the ring region on the innermost side, the electric field distribution can be effectively improved, and the electrical performance of the chip is ensured.

The invention provides a method for improving the power capability of an electrically tunable filter circuit and the electrically tunable filter circuit. The method comprises the following steps: the electrically tunable filter circuit adopts the capacitance tuning module and the variable capacitance diode module as a resonant capacitor; the capacitance value of the capacitance tuning module is adjustable; the sum of the capacitance value of the variable capacitance diode module in the high bias adjustable voltage range and the minimum capacitance value of the capacitance tuning module meets the resonant capacitance required by the electrically tunable filter circuit working at the upper limit frequency; the sum of the capacitance value of the variable capacitance diode module in the high-bias adjustable voltage range and the maximum capacitance value of the capacitance tuning module meets the resonant capacitance required by the electrically tunable filter circuit working at the lower limit frequency, so that the technical problem that the power capability of the electrically tunable filter circuit is affected due to the fact that the bias voltage of the variable capacitance diode is too low is solved. According to the method, the power capability of the electrically tunable filter is improved, and meanwhile, full coverage of upper and lower limit frequencies of a working frequency band can be met.

The invention provides an ultra-wideband impulse fuze random frequency modulation system and method, and belongs to the technical field of ultra-wideband impulse fuzes. The system comprises a microprocessor, and a signal transmitting module and a signal receiving module which are electrically connected with the microprocessor, wherein the signal transmitting module and the signal receiving module are both electrically connected with an ultra-wideband antenna. According to the method, random modulation of the pulse repetition frequency of the ultra-wideband impulse fuze is realized through a voltage-controlled oscillation circuit based on a variable capacitance diode, and the problem of range ambiguity of the pulse fuze is solved on the basis of ensuring high repetition frequency of fuze detection sensitivity. The circuit of the system is simple, the cost is low, the mutual winding influence of fuses is reduced, and the safety and the reliability of the ultra-wideband impulse fuses under the condition of simultaneous shooting and continuous shooting are improved.

This invention provides a non-reciprocal power divider and an electromagnetic wave transmission device. The non-reciprocal power divider includes: a dielectric substrate; at least one Wilkinson power divider; the ports of the Wilkinson power divider serve as the radio frequency ports of the non-reciprocal power divider; the Wilkinson power divider is disposed on the top surface of the dielectric substrate, and each branch of the Wilkinson power divider includes a filter, the filter being composed of at least two resonators; the back surface of the dielectric substrate is provided with multiple varactor diodes, multiple signal feed circuits, multiple metallized vias, and multiple modulation ports; the modulation ports are used to receive modulation signals, each modulation port is connected to a metallized via through a signal feed circuit, one end of each varactor diode is connected to one end of a resonator through a metallized via, and the other end of each varactor diode is grounded. This invention achieves a non-reciprocal power divider without any magnetic material biasing, and has advantages such as integration with circuits.

The invention discloses a balanced broadband center frequency reconfigurable phase shifter which comprises a reference line and a main line, wherein the reference line and the main line have the same circuit topological structure and only correspond to parts with different physical sizes; the main line comprises two pairs of cascaded quarter-wavelength coupling microstrip lines, a stepped impedance microstrip line structure connected between the two pairs of coupling microstrip lines, and a frequency tuning unit connected to the stepped impedance microstrip line structure; the step impedance microstrip line structure connected between the two pairs of coupling microstrip lines is used for realizing broadband differential mode impedance matching; the frequency tuning unit comprises a variable capacitance diode, and by adjusting the bias voltage of the variable capacitance diode, continuous adjustment of the center frequency of the phase shifter can be achieved under the condition that differential mode impedance matching, the differential mode phase shifting characteristic and the common mode rejection performance are kept.

A temperature controlled phase compensation circuit may include a varactor coupled between a radio frequency (RF) transmission line and a node. A temperature controlled phase compensation circuit may include a resistance coupled between a voltage supply and the node, the voltage supply configured to supply a supply voltage. A temperature controlled phase compensation circuit may include a temperature controlled current source coupled to the node and configured to produce a capacitor voltage between the varactor and the resistance, wherein a capacitor voltage produced at the node and applied to the varactor is inversely related to temperature.

Disclosed are embodiments of an amplifier circuit (e.g., a differential amplifier circuit with symmetric parallel branches between input and output stages or a single-ended amplifier circuit with one leg between input and output stages). The circuit includes a power stage. Within the power stage of a differential amplifier circuit, the parallel branches include one or more pairs of power transistors, and varactors are connected to gates of at least one pair of power transistors. Within the power stage of a single-ended amplifier circuit there are one or more power transistors, and a varactor is connected to a gate of at least one power transistor. In operation, capacitance of each varactor is adjustable to fine-tune power transistor gate capacitance and thereby achieve stability and / or improve performance of the amplifier circuit.

A semiconductor device includes a first inductor, a second inductor and at least one varactor. The first inductor is configured to output at least one output signal. The second inductor is coupled to the first inductor with transformer coupling. The at least one varactor is coupled to the second inductor. A frequency of the at least one output signal is tuned according to the at least one varactor.

With this invention, electronic circuit components such as transistors, diodes, zener diodes and varicap diodes, which are conventionally manufactured with semiconductors, can be produced without semiconductors by means of a much simpler and cheaper technology, and by the same technology a compensation capacitor can be manufactured whose capacitance is automatically varied so as to follow changes in the load simultaneously. This principle may also be applied in other areas such as microwaves. In simple terms, the electric and magnetic fields of the main capacitor are blocked by a control voltage and varied between zero and maximum values, and as a result the capacitance of the main capacitor is changed. The fundamental principle here is the control of the electric and magnetic fields between the two conductive plates of a fixed-capacitance capacitor. For this purpose, a control voltage is applied between a third metallic plate, designed as a grid or similar structure so as not to block the electric and magnetic fields of the main capacitor and placed closer to one of the two plates, and the adjacent metallic plate, while a DC voltage (VDD) of suitable value for the circuit is applied across the terminals of the main capacitor. In a slightly different version, two grids are provided so that the structure can be used both as a diode and as a transistor. In both cases, the capacitance value of the main capacitor varies depending on the control voltage, i.e. Co = f(Vi). This means that, similar to classical transistors, the impedance of the circuit varies depending on the control voltage. In this structure, which exhibits behaviour similar to FET transistors, the output voltage is taken across the two outer plates of the capacitor with a design similar to a classical transistor circuit. In the production stage, the dielectric will be formed by coating very thin special plastic or other suitable materials with an appropriate metal of suitable thickness for the design and winding it in roll form. Likewise, dielectric layers may also be formed as very thin oxide or other non-conductive chemical compounds on the surfaces of the metallic 24 plates. That is, use will be made of conventional capacitor technologies such as ceramic, tantalum and electrolytic capacitors. In addition, different methods may be developed depending on the field of application. These designs will find application areas as semiconductor-free transistors, diodes, voltage-controlled variable capacitors, and many other uses, some of which have been explained in this project.