The invention relates to the field of
digital circuit design, and provides a method for optimizing
noise influence of a synchronous switch in an
IBIS model. When a traditional
IBIS model measures pull-up / pull-down characteristics, it is assumed that a power supply and ground potential are constant,
voltage fluctuation actually caused by a synchronous switch is ignored, and the
simulation precision of a high-speed interface is reduced. By collecting current response data of a pull-up circuit and a pull-down circuit of the buffer under different power supply / ground fluctuations, pull-up and pull-down power supply modulation coefficients are calculated respectively, and the influence of
power supply voltage disturbance on output current is represented. In the
simulation stage, the output current in the
IBIS model is dynamically modulated according to the power supply and ground
potential change caused by the real-time SSN, so that the
simulation is closer to the real
chip behavior. The method does not need to modify a model structure, is compatible with an existing process, remarkably improves the accuracy of high-speed
signal integrity analysis, is suitable for design
verification of DDR, PCIe and other high-density parallel interfaces, and effectively supports the
system-level power supply and
signal co-simulation requirements.