6 results about "Dielectric slab" patented technology

An embodiment provides a measurement arrangement for characterizing a radio frequency arrangement comprising a plurality of antennas. Measurement arrangement comprises a dielectric waveguide slab with a plurality of frequency converting structures, arranged in or on the dielectric waveguide slab. Measurement arrangement further comprises a plurality of waveguide transitions arranged at different positions of the dielectric waveguide slab and are coupled to respective radio frequency components. Radio frequency components are configured to transmit and / or receive radio signals. Frequency converting structures are associated with respective antennas of the plurality of antennas, and are configured to perform a frequency conversion on signals received, resulting in frequency-converted signals. Frequency converting structures are further configured to couple respective antennas with the dielectric slab in a frequency converting manner to establish a frequency-converting coupling between the antennas and the plurality of waveguide transitions to cause a frequency-converting coupling between the antennas and the radio frequency components.

A three-dimensional memory device can include an alternating stack of insulating layers and electrically conductive layers over a semiconductor material layer, memory stack structures vertically extending through the at least one alternating stack, and a vertical stack of dielectric slabs interleaved with laterally extending portions of the insulating layers of the at least one alternating stack. Electrically conductive via structures can vertically extend through each dielectric slab and the insulating layers and can contact an underlying metal interconnect structure. Additionally or alternatively, support pillar structures can vertically extend through the vertical stack of dielectric slabs and into openings through the semiconductor material layer and can contact a lower level dielectric material layer in which the underlying metal interconnect structure is embedded to enhance structural support of the three-dimensional memory device during fabrication.

The invention relates to an energy valley photonic crystal wavelength division multiplexer, and belongs to the field of micro-nano and integrated photoelectronics. The multiplexer comprises a first region of a first photonic crystal dielectric slab, a second region of the first photonic crystal dielectric slab, a third region of a second photonic crystal dielectric slab, a fourth region of the second photonic crystal dielectric slab, an input port, a first output port and a second output port, the input port is connected with the first area after passing through the beam splitting section, the first output port is connected with the first area, and the first area is embedded in the second area; the input port is connected with the third area after passing through the beam splitting section, the second output port is connected with the third area, and the third area is embedded in the fourth area. The photonic crystal wavelength division multiplexer solves the problem that an existing photonic crystal wavelength division multiplexer is too sensitive to wavelength disturbance, and consequently the transmission characteristic is unstable.

An antenna element includes a first impedance structure, a second impedance structure, and a polarization rotating element. The first impedance structure includes a first dielectric slab and a first conducting pattern layer mounted on the first dielectric slab. The second impedance structure includes a second dielectric slab and a second conducting pattern layer mounted on the second dielectric slab. The polarization rotating element includes a third dielectric slab, a third conducting pattern layer, a first switch, a fourth conducting pattern layer, and a second switch. The third conducting pattern layer is mounted between the third dielectric slab and the first dielectric slab and forms a first dipole dependent on a position of the first switch. The fourth conducting pattern layer is mounted between the third dielectric slab and the second dielectric slab and forms a second dipole dependent on a position of the second switch.

A communications assembly including a glazing panel and at least one antenna designed to receive and transmit electromagnetic waves at a working frequency between 400 MHz and 70 GHz; the glazing panel having an external surface and an internal surface facing the antenna. The communication assembly includes a metasurface placed between the antenna and the external surface; the metasurface includes at least one periodic conducting structure that includes thin periodic conducting elements. The communication assembly further includes a dielectric slab placed between the antenna and the internal surface at a non-zero distance from the internal surface.

A tightly coupled array antenna and a network device are provided. The tightly coupled array antenna includes a first dielectric slab and a plurality of antenna units printed on a lower surface of the first dielectric slab. Each of the antenna units includes a plurality of dipole antennas that are disposed at intervals. Oscillator arms of the dipole antennas are partially hollowed out to reduce both capacitance formed between the oscillator arms and the first dielectric slab and the cross-sectional area of a current path. A plurality of coupling structures is provided on an upper surface of the first dielectric slab so that each of the antenna units is electrically connected to one coupling structure.