103 results about "Parasitic element" patented technology

The present application relates to a kind of radiation elements, the radiation element includes: radiator, feed rod and parasitic element, the radiator is fed by the feed rod, wherein, the parasitic element includes conductive structure, the conductive structure includes serpentine conductive path, and coupling capacitance is formed between conductive structure and radiator, and wherein, the center frequency of the operating frequency band of the radiator is greater than the center frequency of the first operating frequency band of parasitic element.Radiation element according to some embodiments of the present application can at least reduce the coupling interference between each array, improve isolation performance.In addition, the radiation element according to some embodiments of the present application can also be used to reduce the size of radiation element itself, so that radiation element is more compact.In addition, the present application also relates to a kind of base station antennas.

An electronic device may be provided with peripheral conductive housing structures, a rear wall, and a vent that includes a conductive cowling. The device may include an antenna having an antenna arm coupled to a positive antenna feed terminal and having a parasitic element. The parasitic element may be formed from a conductive trace that is layered onto the rear wall, that is indirectly fed by the antenna arm, and that overlaps a portion of the conductive cowling. The parasitic element may be shorted to a conductive bracket on the rear wall or may be separated from the bracket by a gap. If desired, the conductive cowling may form some or all of a parasitic element for the antenna. The conductive cowling may be indirectly fed by the conductive trace and / or may include an extension that is indirectly fed by the antenna arm.

A patch antenna includes: a radiating element having a flat-plate shape; and a parasitic element provided at a position spaced away from the radiating element in planar view in which the radiating element is seen from a direction perpendicular to a plate surface of the radiating element. A longitudinal direction of the parasitic element is oriented along a direction of a line segment connecting a center of the radiating element and a feeding point in the planar view.

This paper describes a multi-port planar antenna system with digital reconfigurability to adjust the beamdirection function of the system. A substrate is provided, and a grid of parasitic elements is printed on the surface of the substrate. One or more driving radiating elements, such as monopole antennas or dipole antennas, are printed on the substrate near the parasitic elements. Switching elements between adjacent parasitic elements are then configured to guide the radiation direction in a specific direction in the azimuth plane. The small form factor of this planar antenna system can be used in MIMO applications employed by fifth-generation (5G) devices such as mobile phones, Internet of Things (IoT) devices, and vehicles.

An electronic device may be provided with peripheral conductive housing structures, a rear wall, and a vent that includes a conductive cowling. The device may include an antenna having an antenna arm coupled to a positive antenna feed terminal and having a parasitic element. The parasitic element may be formed from a conductive trace that is layered onto the rear wall, that is indirectly fed by the antenna arm, and that overlaps a portion of the conductive cowling. The parasitic element may be shorted to a conductive bracket on the rear wall or may be separated from the bracket by a gap. If desired, the conductive cowling may form some or all of a parasitic element for the antenna. The conductive cowling may be indirectly fed by the conductive trace and / or may include an extension that is indirectly fed by the antenna arm.

In one embodiment, a biological information monitoring apparatus includes: an antenna assembly including at least one antenna, the antenna assembly being disposed close to an object; a signal generator configured to generate a high-frequency signal; and a displacement detection circuit configured to detect a physical displacement of the object based on the high-frequency signal, wherein the at least one antenna includes: a main antenna to be supplied with the high frequency signal; and a parasitic element to which the high frequency signal is not supplied.

A modal antenna assembly is provided. The modal antenna includes an antenna element comprising a curved conical portion and a top portion, the top portion comprising an undulating annular ring disposed on the curved conical portion. The modal antenna further includes a parasitic element positioned at least partially within a gap defined in the curved conical portion of the antenna element.

An antenna comprises first and second radiating elements that are configured to operate in respective first and second operating frequency bands, and a parasitic element that includes a overlapping first and second conductive paths. The first conductive path includes a plurality of first segments and the second conductive path includes a plurality of second segments. A subset of the first segments overlap respective ones of the second segments to form a plurality of pairs of overlapping first and second segments and at least some of these pairs are configured so that an instantaneous direction of a first current formed on the first segment in response RF radiation emitted by the second radiating element will be opposite an instantaneous direction of a second current formed on the second segment in response to the RF radiation emitted by the second radiating element.

This invention provides a wideband airspace radiation device and a wideband anti-unmanned system. The wideband airspace radiation device includes a mounting plate; a first-band radiator is arranged at the center of the mounting surface to provide omnidirectional coverage of the first band; several parasitic elements are arranged circumferentially along the first-band radiator; the second-band radiator employs directional antenna elements, with at least two second-band radiators symmetrically arranged on both sides of the first-band radiator; wherein the parasitic elements are located between the first-band and second-band radiators, and the parasitic elements are used both to guide the electromagnetic field distribution of the first-band radiator and to reflect and guide the electromagnetic waves emitted by the second-band radiator; the several second-band radiators achieve omnidirectional coverage of the second band in a back-to-back configuration. The wideband airspace radiation device provided by this disclosure can eliminate the coverage blind spots of multi-band combined omnidirectional radiators, achieving effective protection of targets.

This invention discloses a high-efficiency power amplifier with extended harmonic modulation bandwidth and its modulation method. A harmonic control circuit unit is added to the input terminal of the final stage die of the power amplifier. The extended harmonic control unit includes a second harmonic modulation circuit and a first parasitic element of the power amplifier back hole. The second parasitic element of the source back hole of the final stage transistor participates in modulation. Considering the parasitic effect of the power amplifier and the back hole at the source of the die, the harmonic modulation bandwidth is further widened by adjusting the harmonic control circuit unit, which effectively improves the working efficiency of the amplifier.

The invention discloses a multi-defect fault modeling method and device in a standard unit. The method comprises the following steps: acquiring a DSPF netlist of the standard unit; converting the DSPF netlist into a switch-level Verilog netlist according to a transistor connection relationship in the DSPF netlist, and constructing a directed graph of a standard cell; selecting a multi-defect fault modeling area on a standard unit according to layout information of the standard unit in the DSPF netlist, and determining a plurality of target interconnection lines influenced by parasitic elements in the multi-defect fault modeling area; according to the directed graph, determining a front-and-back logic connection relation of the multiple target interconnection lines, and according to the front-and-back logic connection relation, determining input and output of a multi-defect fault model to be established; and according to the input, the output and the multiple target interconnection lines, generating a multi-defect fault model so as to solve the problem that the existing fault model cannot completely cover multi-defect fault behaviors, and finally, the diagnosis result precision and the resolution are very low.

The present disclosure refers to a radome assembly, wherein the radome assembly includes a radome and parasitic components for a radiating component, characterized in that the radome itself has a hollow structure, wherein at least one receiving compartment is formed through the hollow structure, wherein the parasitic components are arranged in the receiving compartment. In addition, the present disclosure also refers to a base station antenna including the radome assembly. (Fig. 2a)

Even when mounted on a dielectric panel, it reduces the non-uniformity of the radiation pattern compared to conventional methods. [Solution] The antenna device 1 comprises an antenna module 10 configured as a microstrip antenna including planar feeding elements 14, 16 and a ground conductor 12, and strip-shaped parasitic elements 22, 23. The parasitic elements 22, 23 have a length of 3 / 4 or more of the operating wavelength λ of the antenna device 1. At least a portion of the parasitic elements 22, 23 is at a distance of 1 / 4 to 3 / 4 of the operating wavelength λ of the antenna device 1 from the ground conductor 12.

A method and apparatus for verification of an integrated circuit are provided. The method comprises obtaining simulation results of a first netlist and a layout-extracted netlist comprising parasitic elements. These elements may include parasitic resistors, capacitors, lateral bipolar transistors, field-effect transistors, substrate or well resistances, thermal models, and mechanical stress distributions. Parasitic elements are selectively included in a second netlist based on estimated electrical disturbances derived from simulation data and on contextual factors such as node impedance, node sensitivity, circuit hierarchy, and mode of operation. The method further includes checking whether parasitic elements exceed maximum electrical ratings and enables selective extraction to reduce simulation complexity. The apparatus comprises systems and executable instructions for implementing the method, including parasitic selection, extraction, and rating verification.

This document describes a waveguide with radiation slots and parasitic elements for asymmetrical coverage. An apparatus may include a waveguide for providing asymmetrical coverage in an azimuth plane. The waveguide includes a hollow channel containing a dielectric and an array of radiation slots through a surface that is operably connected with the dielectric. The waveguide includes an array of parasitic elements positioned on or in the surface and offset from a longitudinal side of the array of radiation slots. The radiation slots and parasitic elements configure the described waveguide to focus an antenna radiation pattern that provides an asymmetrical coverage to focus on a particular portion within the antenna field-of-view.

The application discloses a P-waveband broadband characteristic planar dipole antenna and belongs to the technical field of decimeter wave radio frequency front-end devices. A pair of printed planar dipoles composed of a half-elliptical part and a rectangular part and respectively located on the upper and lower surfaces of a dielectric substrate form the main radiation structure of the antenna. A metal base is composed of a metal side wall and a metal ground back plate, the metal side wall plays a role of supporting the dielectric substrate and also plays a role of a parasitic element, the current of the dipole is coupled to the parasitic element metal side wall, the current is avoided from being concentrated in the center of the dipole patch, and therefore the impedance bandwidth of the antenna is improved. The antenna has good radiation performance at 0.4 GHz, 0.5 GHz, 0.6 GHz, 0.7 GHz and 0.8 GHz, and the antenna can be widely applied to P-waveband wireless communication systems with requirements of broadband, low profile and stable performance.

The invention discloses a P-band broadband characteristic plane dipole antenna, and belongs to the technical field of decimetric wave radio frequency front-end devices. The main radiation structure of the antenna is formed by a pair of printing plane dipoles which are respectively arranged on the upper surface and the lower surface of the dielectric substrate and are formed by mixing semi-elliptical parts and rectangular parts. The metal base is jointly composed of a metal side wall and a metal ground backboard, the metal side wall plays a role in supporting the dielectric substrate and also plays a role in a parasitic element, current of the dipole is coupled to the metal side wall of the parasitic element, the current is prevented from being concentrated in the center of a dipole patch, and therefore the impedance bandwidth of the antenna is improved. The antenna has good radiation performance at 0.4 GHz, 0.5 GHz, 0.6 GHz, 0.7 GHz and 0.8 GHz, and the antenna can be widely applied to a P-band wireless communication system having requirements for broadband, low profile and stable performance.

The present invention belongs to the field of semiconductor devices, and specifically provides a reconfigurable model of an InP terahertz transistor and a method for extracting its parameters, so as to solve the problems of the small applicable range of the existing model and the inability to model transistors with different structures. On the basis of the existing model, the present invention introduces variable elements, and through the variable elements, various types of transistors are classified into a unified model, making the physical meaning between various transistors clearer; at the same time, in the process of parameter extraction, the transistor is equivalent to a sub-model of 6 parasitic elements, and step-by-step modeling and simulation are carried out through a three-dimensional electromagnetic field simulation software, and then based on a new parameter extraction algorithm, the parameters of various transistors are extracted under the unified model and its equation expressions; based on this, the present invention can accurately model double-hole bridged transistors, single-hole bridged transistors, and double-hole non-bridged transistors, greatly improving the applicable range of the model, and having the advantages of saving modeling time and improving simulation accuracy.

Competing tradeoffs of overall footprint, weight, and performance impact the design of antennas for many applications. However, those for compact portable devices or mobile platforms exploiting global navigation satellite systems these are further compounded by seeking good performance over a wide angular range. Accordingly, it would be beneficial to provide designers of a wide range of electrical devices and systems with compact broadband antennas which offer a low vertical profile relative to that provided by the common filar element approaches for high precision applications. Accordingly, through a combination of a dipole, a parasitic element, and additional ground elements to a convention ground plane the inventors provide broadband high performance antenna designs with low profile and low overall footprint.

We provide an antenna device capable of handling radio waves across a wide frequency band. [Solution] The antenna device 1 comprises a ground section 3, an antenna 2, and a parasitic element 30. The antenna 2 comprises an element 11 (main body) facing the ground section 3 and having an open end, and a feed section 12 extending from the element 11 in the direction of the ground section 3 and having a feed point 12A. The parasitic element 30 has a first end positioned at a distance from the open end of the element 11 and is used to adjust the impedance of the antenna 10.

This embodiment relates to a packaging substrate and a semiconductor device, the semiconductor device including an element portion having a semiconductor element, and a packaging substrate electrically connected to the element portion; by applying a glass substrate as a core of the packaging substrate, the semiconductor element and the mother board are more closely connected, so as to transmit the electrical signal with the shortest distance. To this end, a packaging substrate is provided, which significantly improves the electrical characteristics such as signal transmission speed, substantially prevents the generation of parasitic elements, so as to further simplify the insulating film processing procedure, and can be applied to high-speed circuits.

The invention provides a modeling method, device and equipment of a semiconductor device, a medium and a program product, and relates to the technical field of semiconductors. The modeling method comprises the following steps: establishing a first local fluctuation model and a first global fluctuation model corresponding to an intrinsic transistor, determining a target parasitic element to be modeled in a parasitic network of the semiconductor device, and obtaining radio frequency characteristic data of the target parasitic element, a second local fluctuation model and a second global fluctuation model corresponding to the target parasitic element can be created based on the radio frequency characteristic data, and then the correlation between the first local fluctuation model and the second local fluctuation model and the correlation between the first global fluctuation model and the second global fluctuation model are established respectively. Therefore, modeling is performed according to the fluctuation of the parasitic elements in the semiconductor device, and the fluctuation characteristics of the parasitic elements are taken into consideration of the model, so that the accuracy of the model can be improved, and the yield of the semiconductor device can be effectively evaluated.

The invention discloses a patch mutual-coupling-removing antenna based on a full-wave-band resonator. The patch mutual-coupling-removing antenna comprises two upper-layer metal patches, a middle-layer metal patch, two layers of dielectric substrates, a bottom-layer metal grounding surface and two metal probes. The two upper-layer metal patches are of rectangular structures with the same size and are arranged on the upper surface of the upper-layer dielectric substrate side by side left and right; the middle-layer metal patch is positioned between the two layers of dielectric substrates; the bottom-layer metal ground plane is located on the lower surface of the lower-layer dielectric substrate, and the two metal probes are connected with the middle-layer metal patch; wherein the middle-layer metal patch forms a strip-shaped resonator. A constant-amplitude and anti-phase electric field exists between the upper-layer metal patch and the middle-layer band-shaped resonator, and the position of a feed port is regulated and controlled to enable the feed port to fall at a weak field region, so that port decoupling can be realized. And meanwhile, the band-shaped resonator only prolongs the propagation path in the vertical direction, so that the beam width of the antenna can be expanded without adding an additional parasitic unit, and the directional diagram of the antenna is not influenced.

According to one embodiment, a method for designing a semiconductor integrated circuit acquires a first simulation result by circuit simulation including a first kind of parasitic element and a second kind of parasitic element to be evaluated for a first net and a second net. A net selection circuit is generated including just one kind of parasitic element on one net selected from the first net and the second net and the two kinds of parasitic elements on the other nets, and a net selection simulation result is acquired by circuit simulation for each of the net selection circuits.

This antenna device includes: a ground element having a shape with a longitudinal direction and a lateral direction; a first antenna element having a first power feeding part, a first erected part formed so as to rise from the first power feeding part, and a first arm part extending along the longitudinal direction from the first erected part; and a first parasitic element connected to a first end part of the ground element in the lateral direction and extending along the longitudinal direction of the ground element. The first end part is located in the vicinity of the first power feeding part in a plan view.

A switching power conversion apparatus includes an input voltage source, an output load, a first switch connected to a switching node, and a second switch connected to the switching node. An inductive element has a magnetizing current connected to the switching node. The inductive element delivers energy via the first and second switches from the voltage source to the load during power conversion cycles. A capacitance connected to the switching node can resonate with the inductive element during a portion of the power conversion cycles to cause a parasitic oscillation. A first clamp subcircuit is across the inductive element and contains a unidirectional auxiliary switch to trap energy from the inductive element and store it into the storage capacitor and prevent parasitic oscillation. The auxiliary switch is complementary to the first switch. A current source discharges the storage capacitor and uses the energy in the switching power conversion apparatus.

The present application provides an integrated transceiver circuit, which can be used for signal transmission and reception between an external control device and an external diagnostic device. A transmission matrix and a receiving matrix are used to construct communication channels between each GPIO port of the external control device and any OBD end, and a driving circuit is set at the same time. On the one hand, the signal from the external control device is converted into an output driving signal with voltage, current and load that can be matched through the driving circuit and the differential impedance control unit, so as to achieve the transmission of the signal from the GPIO port in accordance with the voltage, current and load requirements of various communication protocols; on the other hand, the hysteresis comparator in the driving circuit is used to achieve the reception of the signal from the OBD end in accordance with the voltage requirements of the communication protocol. Since the transmitting matrix and the receiving matrix are located between the GPIO port and the driving circuit, there is no need to carry excessive current. Therefore, the size requirements for the components in the transmitting matrix are not high, and there is no need to set too many parasitic components. The final integrated transceiver has a small area and can be widely used in various scenarios.

The invention relates to an ultra-compact broadband LTE IoT metal stamped antenna for a water meter. An antenna device may include an antenna and a plastic substrate that may support two or more different metal structures for the antenna, where the antenna includes a pattern of quarter-wavelength antenna structures that is curved to fit a limited area and proximate to a metal component, and slotted to achieve transmitter radiation power at a broadband frequency. The antenna arrangement may also include a radiating element mounted over the ground plane and having a plurality of branches over the ground plane to achieve broadband frequencies. The antenna arrangement may also include a parasitic element that improves a resonant frequency in a high frequency band.

The invention provides a small signal model of an InP-based HEMT (High Electron Mobility Transistor) device and a parameter extraction method of the small signal model. The model comprises a stray capacitor between gate and drain bonding pads, a stray capacitor between gate and source bonding pads, a stray capacitor between drain and source bonding pads, a gate stray resistor, a gate stray inductor, a drain stray resistor, a drain stray inductor, a capacitor between gate and drain electrodes, a capacitor between gate and source electrodes and a capacitor between drain and source electrodes. An intrinsic gate-source capacitor, an intrinsic gate-drain capacitor, an intrinsic drain-source capacitor, an inter-gate-drain leakage resistor, an inter-gate-source leakage resistor, an output resistor, an intrinsic channel resistor, an intrinsic transconductance and a delay factor are included. Aiming at the working frequency of a device in a millimeter wave band, an improved small signal model is established, distributed model establishment is carried out on parasitic capacitance between bonding pads and parasitic capacitance between tube cores, four auxiliary structures are combined, parameter extraction of parasitic elements such as the parasitic capacitance between the bonding pads and the parasitic capacitance between the tube cores is respectively carried out, and the reliability of the device is improved. Therefore, the precision of the millimeter wave band small signal model is improved.

Overall coverage area, weight, and performance tradeoffs affect the design of antennas for many applications. However, for small portable devices or mobile platforms using global navigation satellite systems, these devices are further combined by seeking good performance over a wide angular range. Thus, designers providing a wide variety of electrical devices and systems with compact broadband antennas that provide low vertical profile relative to the vertical profile provided by the common wire element approach for high precision applications would be beneficial. Thus, by combining a dipole, parasitic element, and an additional ground element to a conventional ground plane, the inventors provide a broadband high performance antenna design with low profile and low overall coverage area.