The invention provides a
small signal model of an InP-based HEMT (
High Electron Mobility
Transistor) device and a parameter extraction method of the
small signal model. The model comprises a stray
capacitor between gate and drain bonding pads, a stray
capacitor between gate and source bonding pads, a stray
capacitor between drain and source bonding pads, a gate stray
resistor, a gate stray
inductor, a drain stray
resistor, a drain stray
inductor, a capacitor between gate and drain electrodes, a capacitor between gate and source electrodes and a capacitor between drain and source electrodes. An intrinsic gate-source capacitor, an intrinsic gate-drain capacitor, an intrinsic drain-source capacitor, an inter-gate-drain leakage
resistor, an inter-gate-source leakage resistor, an output resistor, an intrinsic channel resistor, an intrinsic
transconductance and a
delay factor are included. Aiming at the working frequency of a device in a
millimeter wave band, an improved
small signal model is established, distributed model establishment is carried out on
parasitic capacitance between bonding pads and
parasitic capacitance between tube cores, four auxiliary structures are combined, parameter extraction of parasitic elements such as the
parasitic capacitance between the bonding pads and the parasitic
capacitance between the tube cores is respectively carried out, and the reliability of the device is improved. Therefore, the precision of the
millimeter wave band small
signal model is improved.