The application discloses a kind of GaN HEMT
equivalent circuit model parameter self-adapting extraction method and
system, comprising: extracting parasitic parameter value by small
signal equivalent circuit parasitic parameter extraction method, establishes initial
population;Stripping parasitic parameter in initial
population obtains each bias eigenvalue by
network analysis, and
simulation equivalent circuit S parameter data is obtained by calculation;Judgment is calculated according to S parameter data individual fitness;New individual is generated to replace singular individual in
population until population is non-singular;According to the search range of adjustment
algorithm of non-singular population;According to the individual selection,
crossover, variation rule set to the individual in initial population is carried out genetic calculation, and new genetic individual is obtained;Whether the preset target is satisfied is judged, and the element parameter corresponding to optimal individual is output as the final parameter of
small signal model;I-V model is optimized by
genetic algorithm, and the weight matrix of
fitness function is updated according to model error, and optimization is carried out again to meet the preset target, and the
small signal model parameter is combined to establish large
signal equivalent circuit model.The application greatly improves the modeling speed of
small signal model and the accuracy of
large signal model without sacrificing accuracy, which provides key
technical support for reliable design of high-power, high-frequency
microwave circuit.