Modeling method of MOS device

Abstract

The invention discloses a modeling method of an MOS device, and the method comprises the following steps: S01, constructing a model circuit of the MOS device, wherein the model circuit comprises an intrinsic transistor, a substrate parasitic resistor, a parasitic capacitor, a parasitic diode, a grid parasitic resistor inductance network, a source parasitic resistor inductance network and a drain parasitic resistor inductance network; S02, determining models and size parameters of an intrinsic transistor and a parasitic diode in the model circuit; S03, respectively determining parasitic elementvalues of the source parasitic resistance inductance network and the drain parasitic resistance inductance network by adopting an electromagnetic simulation method; S04, determining parasitic elementvalues of the substrate parasitic resistance, parasitic capacitance and grid parasitic resistance inductance network based on the test data; and S05, substituting the calculated parasitic element value into the model circuit. The model circuit comprises the parasitic resistance inductance network of each connection path, and the model is wider in application range and can be suitable for millimeter waves and other frequency bands.

Description

technical field [0001] The invention belongs to the field of modeling and testing of semiconductor devices, and in particular relates to a modeling method of MOS devices. Background technique [0002] With the continuous advancement of CMOS technology, the characteristic size of transistors has been continuously reduced, and the characteristic frequency ft and maximum oscillation frequency fmax of MOS devices have continued to increase. The operating frequency of RF MOS devices has begun to be used in high-frequency fields such as millimeter waves and terahertz frequency bands. An accurate MOS device model is a prerequisite for product development in the high-frequency field. [0003] With the increase of operating frequency, the distributed effect of parasitic elements in MOS devices becomes more and more significant. The existing RF MOS device models are not accurate enough to model parasitic elements in high-frequency fields such as millimeter waves. At present, there ar...

AI Technical Summary

Problems solved by technology

Among them, in the production of actual devices, the parasitic elements of the source, drain and gate of MOS devices show distributed effects, the parasitic inductance cannot be ignored, and its parasitic resistance also changes with the increase of frequency. The existing MOS devices Typical models no longer apply at high frequencies

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