High-isolation dual-polarization E-type microstrip antenna with spurious wafer

A high-isolation, microstrip antenna technology, used in antenna unit combinations with different polarization directions, antennas, antenna coupling and other directions, can solve the problems of no dual polarization characteristics and high profile, achieve light weight, stable performance, Easy to group effects

Active Publication Date: 2013-01-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF7 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the profile is high and does not have dual polarization characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-isolation dual-polarization E-type microstrip antenna with spurious wafer
  • High-isolation dual-polarization E-type microstrip antenna with spurious wafer
  • High-isolation dual-polarization E-type microstrip antenna with spurious wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be further elaborated below in conjunction with the accompanying drawings.

[0023] figure 1 shows a schematic diagram of the overall structure of an embodiment of the present invention, refer to figure 1 As shown, one embodiment of the present invention is a dual-polarized E-type patch antenna unit with a parasitic disc, which is provided with an upper dielectric board 1 and a lower dielectric board 7, and the upper dielectric board 1 Supported by at least three plastic screws 6 and placed above the lower dielectric board 7; as figure 1 As shown, there are four plastic screws here, and they are distributed near the four corners of the upper dielectric board 1 and the lower dielectric board 7 .

[0024] refer to figure 2 , image 3 and Figure 4 As shown, the upper and lower surfaces of the upper dielectric board 1 are respectively printed with an E-type patch 2 with a slotting direction of -45° and an E-type patch 3 with a slotting dire...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-isolation dual-polarization E-type microstrip antenna with a spurious wafer. The antenna has the advantages of high isolation, low cross polarization, small size and simple structure. The antenna adopts a double-layer E-type patch form; E-type patches are respectively printed on both upper and lower surfaces of an upper dielectric slab; slotting directions of the E-type patches are orthogonal; and two linear polarizations in the direction of plus and minus 45 degrees are respectively generated by coaxial probe feed. The high-isolation dual-polarization E-type microstrip antenna has the biggest innovations that two E-type patches are respectively printed on both the surfaces of the same dielectric slab; a conventional single-polarization E-type patch antenna is expanded to a dual-polarization E-type patch antenne; and the high isolation and the low cross polarization characteristic are obtained. Under the condition that the return loss is lower than minus 15dB, the bandwidth of 7.7 percent can be reached, the isolation is lower than minus 30dB, a directional diagram is stable, the cross polarization is good, and the gain is in the range of 6.8dBi-7.4dBi. The high-isolation dual-polarization E-type microstrip antenna can be applied to a micro mobile base station.

Description

technical field [0001] The invention belongs to the technical field of antenna engineering, and relates to a dual-polarization microstrip antenna, in particular to a high-isolation dual-polarization E-type microstrip antenna that can be used for a miniature mobile base station. Background technique [0002] The pico base station (Pico) has the characteristics of small size, low power, light weight, easy to carry and install, and is suitable for hotspot areas and indoor coverage occasions. At the same time, the pico base station (Pico) can well solve the difficult problems of fast blind filling, hot spot traffic sending and receiving, and low-cost coverage encountered in current network construction. As a relay station between the base station and the mobile phone user, the micro base station (Pico) mainly receives, amplifies and retransmits the radio frequency signal of the local base station or the user's mobile phone to increase the field strength and solve various problem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/38H01Q1/52H01Q13/08H01Q21/24H01Q19/10
Inventor 杨仕文苟俨山刘传石星宇顾爱军李潇何小峰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap