140 results about "Relative bandwidth" patented technology

The invention belongs to the technical field of antenna engineering, and particularly relates to an ultra-wide-band low-profile phased-array antenna, which realizes broadband impedance matching characteristics and effectively expands the working bandwidth of the antenna by optimizing a dipole arm structure and introducing a matching branch knot and linear tapered slot composite structure on a radiation unit layer; on the array architecture level, an electromagnetic metasurface technology is adopted, array current distribution is improved through a periodic artificial electromagnetic structure, the active standing-wave ratio is remarkably reduced, the scanning angle of an array is widened, and meanwhile high compression of a system profile is achieved; on the structural design level, a three-dimensional composite structure of a transverse metal floor, a longitudinal radiation layer and a transverse metasurface layer is innovatively constructed, and the overall section height is reduced to 0.137 lambda Low (lambda Low is the lowest working frequency wavelength) through electromagnetic coupling and space folding technologies; in conclusion, the ultra wide band (the relative bandwidth is greater than or equal to 90%) and the low profile (lt; and the method is suitable for a new generation of broadband phased array radar system.

The invention discloses an ultra-wideband 180-degree phase shift circuit which comprises a radio frequency signal input end, a radio frequency signal output end, an ultra-wideband balun with a center tap and a stub compensation line, a first matching compensation network, a second matching compensation network, a differential signal switch selection circuit and a control circuit. The ultra-wideband balun can realize conversion between a single-ended signal and a differential signal in an ultra-wideband frequency range, a first differential output port of the ultra-wideband balun is connected with one end of the first compensation matching network, and a second differential output port of the ultra-wideband balun is connected with one end of the second compensation matching network; a first differential port of the differential signal switch selection circuit is connected with the other end of the first compensation matching network, and a second differential port of the differential signal switch selection circuit is connected with the other end of the second compensation matching network; and the control circuit is used for controlling the differential signal switch selection circuit to switch and output 0-degree and 180-degree radio frequency signals. According to the invention, low-error phase shift precision can be provided within the frequency range of 2-20GHz and the relative bandwidth of 160%.

The present invention relates to the fields of ferroelectric single crystal technology and acousto-optical device technology, particularly to a silicon-based lead magnesium niobate (PbMn) single crystal piezoelectric wafer structure, preparation method, and application. The structure comprises a silicon substrate on which a silicon dioxide layer and a single crystal piezoelectric thin film layer are sequentially disposed; the single crystal piezoelectric thin film layer is a PbMn-PT single crystal, including a binary PMN-PT single crystal thin film or a ternary PIN-PMN-PT single crystal thin film. This piezoelectric wafer structure on a silicon substrate can be used to fabricate various high-performance piezoelectric MEMS sensors, actuators, and electro-optical modulator devices. The resulting surface acoustic wave (SAW) filters and thin film bulk acoustic wave (BAW) filters exhibit a relative bandwidth increase of over 50%, and the resulting electro-optical modulators exhibit lower half-wave voltage and higher electro-optical modulation efficiency. The device volume can be reduced by 10 times, better meeting the future 6G communication requirements for higher efficiency, higher integration, and miniaturization of MEMS devices. This provides a novel multilayer piezoelectric wafer structure for the miniaturization and integration of piezoelectric MEMS and optoelectronic devices.

The invention provides a novel broadband rectifier which is integrated with an initial coupling feedback network (CFN) and is applied to the field of wireless power transmission. The framework of the rectifier adopts a transmission line, the transmission line is bent into an L shape, and the transmission line and the CFN form an impedance matching network together. The CFN has double functions: impedance matching is realized, rectified energy is recovered and fed back to a source, repeated rectification is carried out, and the rectification bandwidth is effectively widened. Through experimental manufacturing and testing of the rectifier, the result shows that the conversion efficiency of the rectifier in the frequency range of 0.6-2.5 GHz exceeds 50%, the peak efficiency reaches 70.6%, and the relative bandwidth reaches 122.5% under the conditions that the input power is 8dBm and the load is 1k omega.

The invention discloses a broadband wide-beam millimeter wave magnetoelectric dipole antenna, and belongs to the technical field of radio frequency front-end devices. The antenna mainly structurally comprises an upper-layer dielectric plate, a middle-layer dielectric plate, a lower-layer dielectric plate, a metal radiation through hole, a metal radiation patch, a parasitic unit through hole, a parasitic unit patch, a left feed through hole, a right feed through hole, a metal feed patch, a coaxial line and a metal ground. Wide impedance bandwidth in the range of 18.2-40.3 GHz is realized when the antenna works in a millimeter wave frequency band, the relative bandwidth exceeds 75%, and the antenna has wide beam width performance; the structure is simple and manufacturing is convenient.

The utility model designs an SIW filtering antenna based on a U-shaped groove structure, and the antenna comprises a dielectric substrate, a U-shaped groove is etched at the right center position, and an upper metal surface of a rectangular cut corner is cut off from the edge of a metal surface right above the U-shaped groove; the position of the coaxial feed structure is in the center of the substrate, the antenna feeds through a coaxial line, a U-shaped groove is loaded through the SIW resonant cavity, a corner is cut on the upper surface of metal to obtain high gain, and a filtering effect is generated. According to the utility model, the filtering antenna with high gain and compact structure is constructed by using only one layer of SIW resonant cavity, and the filtering antenna has good practicability. The working frequency band of the designed filtering antenna reaches 4.5 GHz-4. 7 GHz, the impedance relative bandwidth is 4.3%, the positions of 4.27 GHz and 5.19 GHz on the two sides of an antenna passband are each provided with a radiation zero point, the positions of the two radiation zero points are both-25dBi, and it is indicated that the antenna achieves the good filtering effect. And the maximum value of the gain in the passband is 8dBi. The filtering antenna realizes a good filtering effect in the Sub-6GHz frequency band of a 5G communication system, and has application value.

The invention discloses an ultrathin single-layer dual-passband frequency selective surface structure, and belongs to the field of electromagnetic fields and microwaves. The frequency selective surface structure is formed by periodically arranging the same unit structures, and each unit structure comprises a single-layer dielectric substrate and a single-layer metal layer loaded on the upper surface of the dielectric substrate; the single-layer metal layer is formed by sequentially nesting three concentric annular patches, and the three concentric annular patches are respectively a metal mesh tightly attached to the boundary of the unit, four square metal rings bent outwards and arranged in the metal mesh, and four circular metal rings bent outwards and arranged in the square metal rings from outside to inside. The ultra-thin single-layer dual-passband frequency selective surface structure can form two passbands with high relative bandwidths when electromagnetic waves are incident, has excellent angle stability under TE and TM polarization, and can be used for improving the performance of the antenna by changing the size parameters of the square metal ring and the circular metal ring. The two transmission zero points can be regulated and controlled, so that the position of the passband is adjusted.

The invention belongs to the field of electromagnetic wave absorbing materials, and particularly relates to a thin broadband composite wave absorber based on a frequency selective surface. According to the invention, the wave-transparent layer is added in the middle of the multi-layer magnetic material, the mindset of simply stacking the same type of materials in the traditional multi-layer wave-absorbing structure is broken, and the wave-transparent layer is introduced to change the original characteristic that the impedance gradually changes in sequence; meanwhile, a magnetic wave-absorbing material, a frequency selection surface and a medium matching layer are subjected to composite design, the frequency selection surface generates an electromagnetic coupling effect at high frequency, phase and impedance conversion of electromagnetic waves in a multi-layer structure is controlled, and efficient impedance matching and electromagnetic wave energy dissipation in a broadband are achieved through electromagnetic absorption and interference cancellation; and an excellent wave absorbing effect is achieved. The total thickness of the composite wave absorber ranges from 0.064 lambda to 0.1 lambda, the-10 dB absorption bandwidth ranges from 3.3 GHz to 18 GHz, and the relative bandwidth reaches 138%; and meanwhile, the wave absorber has a wide angular domain characteristic under oblique incidence, and a novel thin broadband composite wave absorber scheme is provided.

The invention discloses a device for inhibiting grating lobes of an acoustic transducer array by using band-pass driving signals, which comprises an upper computer, an acoustic host and an acoustic transducer array which are connected in sequence, the acoustic host comprises a logic control circuit, N direct digital synthesis circuits connected with the logic control circuit, and N linear amplification circuits connected with the N direct digital synthesis circuits in a one-to-one correspondence manner, so that N channels are formed; and the acoustic transducer array is a linear regular arrangement array and comprises N transducer array elements connected with the N linear amplification circuits in a one-to-one correspondence manner, the width of each transducer array element is L, the spacing distance between the adjacent transducer array elements is dL, the resonance center frequency of each transducer array element is F, and the relative bandwidth is B. According to the invention, a good grating lobe suppression effect can be obtained with relatively low technical cost.

The application claims a kind of multiband terahertz absorber based on laminated graphene structure, which is a laminated stack structure.The positive terminal of external power supply is connected to two layers of graphene, and the negative terminal is connected to a gold reflection layer.The Fermi energy level of graphene is controlled by voltage.The structure parameters of each layer, graphene and dielectric layer material characteristics are set.The absorber forms multiple absorption peaks in the 1~5 THz frequency band, with a peak absorption rate of over 90%.At 1.60 THz, a narrowband absorption of 93% is achieved, and at 2.54~4.28 THz, a broadband absorption with a relative bandwidth of 51% is achieved.The normalized equivalent impedance at the resonance frequency point is nearly perfectly matched with the free space impedance.The absorber also has good polarization angle insensitivity, with only slight absorption performance attenuation within an incident angle range of 0~60°.The absorption characteristics can also be adjusted by adjusting the key geometric parameters.The application can simultaneously achieve narrowband and broadband absorption, with excellent absorption performance, and is suitable for interference signal filtering in terahertz communication systems.

The disclosed technology provides a system and method for allocating frequency bands to a mobile device or user equipment (UE) based on priorities assigned to the different frequency bands. When no priority is assigned to the frequency bands, when a special or reserved priority is assigned, or when equal priority is assigned, the frequency band allocation to the UE is based on a default frequency allocation algorithm (e.g., based on a relative bandwidth of the different frequency bands). When a UE is capable of utilizing a first and a second frequency band, and the priority assigned to the first frequency band is higher than the priority assigned to the second frequency band, the network (e.g., eNB / gNB) overrides the default algorithm and preferentially allocates the first frequency band to UE even when the first frequency band has a smaller bandwidth than the second frequency band or when the default algorithm would otherwise prefer the first frequency band.

The invention provides a data scheduling method and system and switch equipment. The method comprises the following steps: initializing queue configuration information of data scheduling in a data center switch; extracting a relative bandwidth proportion of each data queue in the data center switch from the queue configuration information, and determining a relative quantum feature of each data queue through each relative bandwidth proportion; performing quota resetting on deficit counters of the data queues based on the relative quantum features of the data queues, determining the amount of data capable of being sent of the data queues through the deficit counters with the reset quota and the current data packet length of the data queues, and further updating the queue states of the data queues; and generating a next round of scheduling polling queue in the data center switch based on all queue states, and performing deficit polling scheduling on the data queues in the data center switch through the scheduling polling queue. Based on the scheme, cooperative scheduling of dynamic weight allocation and accurate deficit management in the switch can be realized, so that the bandwidth utilization rate of the switch can be improved.

The application discloses a dual-polarized microstrip patch antenna applied to a millimeter wave phased array, and belongs to the field of radio frequency front ends.The antenna mainly comprises two substrates and two patch structures, wherein the top patch is fed by two coaxial probes, the feeding port has two feeding slits, and the bottom patch is in a cross shape, which increases the cross-polarization ratio of the dual-polarized antenna radiation.The antenna realizes the dual-polarized characteristic at H plane + / -45 DEG, the 10dB relative bandwidth is 38.9%, and the radiation pattern half-power beam width is greater than 100 DEG. The antenna has the characteristics of simple structure and simple manufacturing, and can be rapidly printed and manufactured by adopting a planar microstrip structure.

The present invention discloses a millimeter-wave frequency band stripline probe antenna based on a microwave PCB. The antenna comprises a tapered horn, an air waveguide, a microwave PCB upper core board, a prepreg sheet (PP), a microwave PCB lower core board, and metalized vias. The microwave PCB upper core board, the prepreg sheet (PP), the microwave PCB lower core board, and the metalized vias are sequentially stacked and pressed together to form a microwave multilayer PCB. The tapered horn is connected to the air waveguide and then fixed to the upper surface of the microwave multilayer PCB by screws, forming a millimeter-wave frequency band stripline probe antenna. The present invention has the advantages of large relative bandwidth, low insertion loss, small standing wave, and adjustable antenna gain. Furthermore, the antenna has a simple and compact structure, low cost, and is easily integrated with a millimeter-wave chip on a microwave PCB.

According to the magnetoelectric dipole antenna, the coaxial feed communication bandwidth is larger than 100%, and the technical problems that broadband impedance matching and high-frequency mismatching are achieved, and the stability of a feed structure is poor are solved. According to the antenna, a meandering seam bending type electric dipole and a stepped flaring type magnetic dipole are cooperatively matched, and a feed structure and a U-shaped reflector are combined to integrally form the magnetoelectric dipole antenna. A meandering seam is etched on a horizontal rectangular patch, a vertical patch is welded on the outer side of the horizontal rectangular patch to form a three-dimensional radiator, and the three-dimensional radiator and a stepped flaring type cavity structure magnetic dipole form a closed structure. The feed structure comprises a coaxial line and two bent copper sheets, thereby realizing direct current grounding and providing mechanical reinforcement. 3.7 GHz and 4.2 GHz resonance points are introduced to realize 104.8% of relative bandwidth, while the compact structure is maintained, the broadband coverage and stable radiation characteristics are realized, the long-term reliability in an outdoor complex environment is ensured by a stable feed structure, part of 5G communication signals in a Sub-6G frequency band can be effectively covered, and the antenna is suitable for various wireless communication systems.

The application belongs to the technical field of wireless communication, and relates to the structural design of a broadband antenna, and specifically provides a low-profile broadband dual-polarized metasurface antenna which is composed of a microstrip feed network 5, a lower layer dielectric substrate 4, a metal floor 3, an upper layer dielectric substrate 2 and a metasurface radiation array 1 which are sequentially stacked from bottom to top. The structure of the metasurface radiation array is creatively designed through eigenmode analysis, so that the strongest current is regulated to the central rectangular patch, thereby enabling the microstrip feed structure to excite vertical and horizontal polarization radiation modes through the cross-shaped slot on the metal floor, realizing the dual-polarization and broadband characteristics of the antenna. Finally, the bandwidths of the two ports of the antenna cover 3.42-6.09 GHz and 3.56-6.24 GHz respectively, the relative bandwidths are 56.15% and 54.69% respectively, the maximum gains of the two ports in the passband can reach 10.4 dBi and 11.0 dBi respectively, and the profile height is only 0.085λ0. Moreover, the application has the advantages of simple structure, wide bandwidth, low profile, low processing and assembling difficulty and the like.

The 6G satellite communication terminal system comprises a grounding layer, a substrate layer, a feed layer and a radiation metal patch, the grounding layer is arranged at the lower end of the substrate layer, the feed layer is arranged at the upper end of the substrate layer, the radiation metal patch is of a square structure, and the radiation metal patch is arranged on the substrate layer. The radiation metal patches are arranged at the upper end of the feed layer in a matrix mode, cross-shaped gaps are etched in the upper end walls of the radiation metal patches, the radiation metal patches and the feed layer are electromagnetically coupled through the cross-shaped gaps, and the feed layer is provided with a T-shaped strip line matching network. According to the technical scheme of the invention, the electromagnetic decoupling of the Ku / Ka dual-frequency transceiving coplanar phased array can be realized (the isolation degree gt; 45 dB), and a broadband impedance modulation type power amplification technology (24-30 GHz relative bandwidth gt; 25%), a multilayer microwave composite board integrated framework (the thickness is lt; 2 mm, the interconnection loss lt; therefore, the requirement for light weight is met, scanning at a wide angle of + / -60 degrees is supported, and the consistency of a directional diagram of the antenna is also improved.

The utility model discloses a full-wave oscillator unit and an antenna. The full-wave oscillator unit comprises a bottom plate, an oscillator support and an antenna radiation oscillator, the antenna radiation oscillator is arranged on the front surface of the bottom plate, the antenna radiation oscillator and the bottom plate are arranged in parallel up and down, and the antenna radiation oscillator is supported by the oscillator support on the bottom plate; wherein two oscillator arms in the 45-degree direction and the-45-degree direction of the antenna radiation oscillator form a crisscross dual-polarized radiation unit. The antenna provided by the utility model has the characteristics of high gain, low cost and simple structure. The antenna mainly covers a relatively wide working frequency band of 698MHZ-960MHZ, and the relative bandwidth reaches 32%; the radiation gain of 9-10db is realized by the unit oscillators; a plurality of unit oscillators form an array antenna to realize broadband and high gain performance; through printed board processing, the size consistency is improved; the assembly structure is simple, and production efficiency is improved.

The utility model discloses a microstrip patch antenna which comprises a dielectric substrate and a radiation patch. The radiation patch is arranged on the dielectric substrate, the radiation patch is E-shaped, the parallel edge of the E-shaped radiation patch is defined as a first sub-radiation patch, the vertical edge of the E-shaped radiation patch is defined as a second sub-radiation patch, and the length of the first sub-radiation patch is larger than or equal to 2.1 mm and smaller than or equal to 2.5 mm. The E-shaped structure enables the current to bypass between the first sub radiation patch and the second sub radiation patch, which is equivalent to increasing the electrical length of the radiation patch and reducing the resonant frequency of a fundamental mode, so that the low-frequency band bandwidth is broadened; the edges of the first sub-radiation patch and the second sub-radiation patch can generate strong electromagnetic field coupling to excite an additional parasitic resonance mode, so that the frequency band is further widened, and the bandwidth of the microstrip patch antenna is effectively widened. Wherein the first sub radiation patch of 2.1 mm to 2.5 mm enables the resonant frequency of the microstrip patch antenna to range from 43.7 Ghz to 55.1 Ghz, the relative bandwidth is 23%, and high bandwidth is achieved.

The invention discloses a terahertz directional diagram reconfigurable antenna based on an RF-MEMS switch, and belongs to the technical field of terahertz radio frequency front-end devices. The antenna is composed of a radiation unit, a composite beam ohmic contact type MEMS switch, a coplanar waveguide feed structure, a microstrip transmission line, a dielectric substrate and a metal ground backboard. The antenna adopts a single-layer quartz glass substrate integrated waveguide (SIW) feed structure, excellent impedance matching with a microstrip transmission line is realized, the relative bandwidth exceeds 19%, and an MEMS switch is driven to act through direct current bias. The antenna has a relatively wide impedance bandwidth. Reconfiguration of a directional diagram is controlled through on-off of a switch, the antenna achieves-40-degree, 0-degree and + 40-degree three-beam directional switching in the 00 mode, the 01 mode and the 10 mode, the main lobe widths in the three modes are 55.61 degrees, 58.94 degrees and 98.56 degrees respectively, and wide-angle-domain coverage is supported.

This invention discloses a bandpass frequency-selective surface structure based on strongly coupled pairs, composed of multiple basic structural units. Each basic structural unit has a vertically symmetrical structure along its thickness direction. Both the upper and lower symmetrical portions include a first metal layer and a first dielectric layer in symmetrical positions. The first metal layer contains a first resonator pair, a second resonator pair, and a third resonator pair, each using metal patches as resonators. A second metal layer and a second dielectric layer, separated along the thickness direction of the basic structural unit and in asymmetrical positions, are disposed between the upper and lower symmetrical portions. The upper and lower symmetrical portions are connected by metal conductive posts. This invention operates stably at a center frequency of 5 GHz, introduces four transmission zeros, achieves a fourth-order frequency response within 8.4% of the relative bandwidth, has an insertion loss of less than 0.49 dB, and 40° angular stability, exhibiting superior performance.

The invention relates to the technical field of communication equipment, and discloses a frequency hopping filter with a hopping transmission zero point, a hopping control method and communication equipment. At least one resonant inductor of an LC resonant circuit of the frequency hopping filter is connected with a radio frequency switch feedback capacitor array in parallel; the frequency of a transmission zero point at a higher harmonic of the frequency hopping filter is controlled by controlling the opening and closing of a channel where each feedback capacitor in the radio frequency switch feedback capacitor array is located, so that the frequency of the transmission zero point changes along with the center frequency of the frequency hopping filter; and finally, far-end suppression, relative bandwidth stability and frequency hopping accuracy in a wide frequency range are improved.

The invention discloses a cladding-based ultra wide band 1-bit reconfigurable metasurface with switchable frequency bands, which comprises a basic unit, and is characterized in that the basic unit comprises a dielectric substrate, a metal patch and a PIN (Personal Identification Number) diode; the metal patch is positioned on the upper surface of the dielectric substrate; the metal patches are two axisymmetric metal patches, an interval is formed between the two axisymmetric metal patches, the PIN diode is arranged at the interval, and the two axisymmetric metal patches are connected through the PIN diode located in the center of the unit; a coating is loaded on the surface of the basic unit and is used for enhancing or expanding the regulation and control capability of the basic unit; an air layer is arranged between the surface of the basic unit and the coating. By loading a specific coating on the surface of the basic unit, frequency band switching and 94% relative bandwidth can be realized. According to the invention, the regulation and control capability of the reconfigurable metasurface on electromagnetic waves is greatly improved, and the breakthrough progress of an intelligent metasurface platform is realized.

The application relates to a kind of foldable band-pass filters based on polyimide flexible substrate.The filter adopts coplanar waveguide structure, and is prepared using self-assembly technology.It is tested that the filter center frequency is 2.5 GHz, the relative bandwidth is 15.9%, the minimum insertion loss is 0.71 dB, and the in-band return loss is greater than 20 dB.The performance of the filter is basically consistent in flat, curved and folded states.The flexible filter prepared using the self-assembly technology is expected to become one of the components of future flexible communication systems.

The utility model discloses a dual-frequency circularly polarized combined antenna, which comprises a metal reflecting plate, a high-frequency circularly polarized radiation unit and a low-frequency wide-beam radiation unit, the high-frequency circularly polarized radiation unit and the low-frequency wide-beam radiation unit share the same reflecting plate, and the high-frequency circularly polarized radiation unit is positioned above the low-frequency wide-beam radiation unit. According to the utility model, the embedded orthogonal dipole pair is adopted, so that the high-frequency-band axial ratio bandwidth breaks through the limitation of the traditional single-feed microstrip antenna, the relative bandwidth with the actually measured axial ratio less than or equal to 3dB reaches 18.7%, and the Beidou third-generation B1C / B2a frequency band requirement can be completely covered. The nickel-chromium alloy films evaporated on the upper and lower surfaces of the dielectric plate effectively inhibit interlayer crosstalk, the cross polarization ratio is improved to be greater than 15dB, and the dual-band radiation purity is ensured.

The invention discloses a millimeter wave ultra-wideband substrate integrated coaxial line antenna array based on a laminated metasurface. The ultra-wideband antenna array comprises a coplanar waveguide-to-substrate integrated coaxial line switching structure, a one-to-eight power divider based on a substrate integrated coaxial line structure, a butterfly coupling slot and a laminated metasurface antenna, after being fed in by the coplanar waveguide, energy is transmitted to the substrate integrated coaxial line power divider through the blind hole structure, and is uniformly distributed to eight channels in the substrate integrated coaxial line power divider; and then, the energy is coupled and fed to the laminated metasurface antenna through the coupling slot. The antenna can stably work in the frequency range of 15.84 GHz-49.15 GHz, the return loss (S11) is always lower than 10 dB, and the corresponding relative bandwidth is 102.5%. In a target working frequency band, the maximum peak gain of the antenna can reach 18.58 dBi, and the antenna has excellent ultra-wideband characteristics and good radiation performance.

The invention discloses a waveguide-to-substrate integrated coaxial line switching structure which comprises a bottom waveguide layer, a metalized via hole, a lower metal layer, a lower dielectric substrate, a middle bonding layer, a middle metal layer, an upper dielectric substrate and a top metal layer. The lower metal layer gap is used for connecting the waveguide to the substrate integrated coaxial line, the middle metal layer is two metal strips, and each strip is composed of an impedance conversion structure and a transition connection substrate integrated coaxial line conduction band and is in mirror symmetry in the narrow edge direction of the waveguide. The device can be realized based on a multi-layer PCB technology, and is small in size, simple in structure and easy to integrate. The substrate integrated coaxial line has good impedance matching characteristics and low insertion loss in a frequency band range of 23.6 GHz-36.4 GHz, constant-amplitude inverted-phase output is carried out at two ports of the substrate integrated coaxial line, and the relative bandwidth of 42.6% is realized.

The application discloses an ultra-wideband polarization converter metasurface for converging lenses and spatial imaging. The cell of the metasurface is composed of two metal gratings, two pairs of L-shaped metal patches and two dielectric plates. The metasurface of the application works in the range of 0.5 to 1.8 THz, the transmission coefficient is greater than 0.87, the relative bandwidth reaches 113%, the polarization conversion rate remains close to 100%, and the phase covers 360°. The metasurface has the advantages of simple structure, small size, high bandwidth, good polarization characteristics, easy integration, low loss and simple preparation process. The metasurface combines the changes of geometric phase and amplitude, which can not only realize two-dimensional focusing lenses by using phase changes, but also realize spatial imaging functions by using amplitude changes. The research results show that the metasurface provides a new way for the flexibility of terahertz wave polarization and phase manipulation, and opens up a new way for the dynamic operation of terahertz wave fronts.

The invention discloses an inclined beam circularly polarized antenna array for an X-band airborne SAR (Synthetic Aperture Radar). The inclined beam circularly polarized antenna array comprises a cylindrical dielectric resonator antenna array, a T-shaped slotted floor, a dielectric substrate, an equal phase shift feed network and a grid type metal plate. The antenna array works in a wide frequency band, the relative bandwidth of about 10% is realized in an X wave band, and meanwhile, the requirement of S11lt is met; the impedance matching sum ARlt is-10dB; the axial ratio performance is 3dB; meanwhile, the antenna array realizes stable high gain performance in an X wave band, and the right-handed circular polarization gain full wave band is more than 10dBic; in addition, by arranging the feed network, the antenna array beam can be inclined within the range of 30-35 degrees, and good right-handed circular polarization purity is kept, so that the beam inclination can be realized by horizontally installing the antenna, and the low profile of the airborne SAR system is realized.

The utility model relates to the technical field of terahertz radio frequency circuits, solves the technical problems of narrow relative bandwidth and complex processing of a terahertz frequency band waveguide duplexer, and particularly relates to a terahertz multistage coupling type duplexer easy to realize by CNC (computer numerical control). Comprising a duplexer main body structure which is formed by separably combining an E-plane slotted waveguide structural body A and an E-plane slotted waveguide structural body B. The duplexer main body structure is formed by cascading an E-plane Y-type junction with two filters and is provided with an input waveguide, a low-frequency output waveguide and a high-frequency output waveguide. Compared with a traditional T-shaped junction, the T-shaped junction is more suitable for the design of a broadband waveguide duplexer, and the compactness and simplicity of the structure are kept. Actual measurement shows that 24% of total working bandwidth is obtained, and the overall performance of a terahertz communication system is further improved.