161 results about "Hydrogen annealing" patented technology

The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 μm with a solution having an etching effect on a surface of an active layer of a bonded substrate which has been prepared by bonding two substrates after one of them having been ion-implanted and then cleaving off a portion thereof by heat treatment. SC-1 solution is used for performing the etching. A polishing, a hydrogen annealing and a sacrificial oxidation may be respectively applied to the active layer before and/or after the etching. The film thickness of this active layer can be made uniform over the entire surface area and the surface roughness of the active layer can be reduced as well.

An embedded LSI includes a FeRAM macro block and an associated logic circuit section. A hydrogen barrier layer covers the FeRAM macro block as a whole and exposes the logic circuit section. The edge of the hydrogen barrier layer overlies the peripheral circuit of the FeRAM macro block and the boundary separating the FeRAM macro block from the logic circuit section. The ferroelectric capacitor is protected by the hydrogen barrier layer against hydrogen during a hydrogen-annealing process.

The invention relates to a straightening roll and the manufacturing process thereof, wherein, the composition of the roll includes 0.60wt percent to 1.10wt percent of C, 0.20wt percent to 1.0wt percent of Si, 0.20wt percent to 0.60wt percent of Mn, 0.20wt percent to 1.00wt percent of Ni, 4.00wt percent to 6.00wt percent of Cr, 0.20wt percent to 1.00wt percent of Mo, 0.10wt percent to 0.50wt percent of V, less than or equal to 0.02wt percent of P, less than or equal to 0.02wt percent of S and the rest, Fe and other inevitable impurities; the manufacturing process of the roll includes: electric furnace smelting to secondary refining to ingot casing to electrode rolling to electrode rough machining to electroslag remelting to ingot casing to hydrogen diffusion annealing to forging to conditioning treatment to ultrasonic flaw detection and microscopic and macroscopic test to rough machining to quenching and tempering heat treatment to semifinishing to final heat treatment to finish machining to finished product. The invention increases the service life of the straightening roll and the surface quality of strip steel and eliminates the bottleneck in straightening high strength plate during production.

The invention relates to bainite pre-hardening plastic mold steel and a preparation method and a heat treatment method thereof. Chemical components of the steel are optimized on the basis of P20 steel, the content of manganese (Mn) is appropriately increased, the content of the chromium (Cr) and molybdenum (Mo) is reduced, little niobium (Nb) is added, and no nickel (Ni) and vanadium (V) in expensive price are not contained. The preparation method of the plastic mold steel comprises the following steps of: compounding, smelting and casting; carrying out the multi-directional forging heat machining; carrying out the wind cooling and the air cooling; and finally carrying out the tempering heat treatment. The plastic mold steel has characteristics of large cross section, low cost, high hardenability, good hardness uniformity and the like and also has low susceptibility of flake formation, a diffusion hydrogen annealing process is omitted, in addition the post-forging normalizing is adopted to substitute a thermal refining process, so that the production period is greatly shortened, the domestication of the plastic mold steel with large cross section, long service life, top quality and short period can stride forward for a large step, and the existing domestic manufacturing concept of energy conservation, emission reduction, sustainability and economical type can be met.

The invention relates to a high-hardness high-polishing pre-hardening plastic die steel and a manufacture technology thereof, which belongs to the technical field of alloy steel manufacture technology. The steel is characterized in that the alloy chemical component comprises the following alloy elements by mass percentages: 0.25-0.40% of C, 0.10-0.30% of Si, 1.50-2.00% of Mn, 1.50-2.50% of Cr, 0.50-1.00% of Mo, 0.10-0.30% of V, less than or equal to 0.025% of P, less than or equal to 0.005% of S, 0.60-1.50% of Ni, less than or equal to 0.15% of Nb, and the balance of Fe. The manufacture method comprises the following steps: burdening, smelting, pouring, performing hot delivery; performing high-temperature diffusing heat treatment, then performing multi-directional forging and hot processing, normalizing on fine grains and dehydrogenizing and annealing; and finally quenching and performing temper heat treatment to obtain the tempered structure with hardness of 38-42HRC. The steel of the invention has the advantages of low cost, high hardenability, high hardness, high polishing performance and dermatoglyph etching performance.

The invention discloses a large thickness steel plate for hydrogenation reaction chamber reeling equipment and a production method thereof. The steel plate takes Cr-Mo steel as the base, an amount of alloying elements, such as Ni, Cu, Al, Nb, Mn, Cr and the like are added, the contents of harmful elements, such as Sn, Sb, As, P, S and the like are controlled, and the finished large thickness steel is prepared by adopting the processes of electric furnace smelting, LF refining furnace refining, throwing down line stacking for slow-cooling, electroslag remelting, rolling and product forming, diffusion hydrogen annealing, normalizing and tempering heat treatment and the like. The thickness of the steel plate reaches 198 mm, the weight of single steel plate reaches 25 tons, the high temperature tensile strength and yield strength of the steel plate are good, the lower temperature toughness at minus 30 DEG C is good, the steel plate has good tempering embrittlement sensitivity coefficient, and the purity of the produced steel plate is high, the component is uniform, the inner part is compact, and the mechanical property is uniform. The steel plate can meet the operation requirement of hydrogenation reaction chamber reeling equipment, and is suitable for the production of the main structural parts of all hydrogenation reaction chamber reeling equipment.

A method for heat-treating an SOI wafer in a reducing atmosphere, wherein the SOI wafer is heat-treated through use of a rapid thermal annealer at a temperature within the range of 1100.degree. C. to 1300.degree. C. for 1 sec to 60 sec. The reducing atmosphere is preferably an atmosphere of 100% hydrogen or a mixed gas atmosphere containing hydrogen and argon. The heat treatment is preferably performed for 1 sec to 30 sec. The method eliminates COPs in an SOI layer of an SOI wafer in accordance with a hydrogen annealing method, while preventing etching of the SOI layer and a buried oxide layer.

Transistors and methods for fabricating the same include forming one or more semiconductor fins on a substrate; covering source and drain regions of the one or more semiconductor fins with a protective layer; annealing uncovered channel portions of the one or more semiconductor fins in a gaseous environment to reduce fin width and round corners of the one or more semiconductor fins; and forming a dielectric layer and gate over the thinned fins.

A method of manufacturing a semiconductor device based on a SiC substrate (12), comprising the steps of forming (201) an oxide layer (14) on a Si-terminated face of the SiC substrate (12) at an oxidation rate sufficiently high to achieve a near interface trap density below 5×10¹¹ cm⁻²; and annealing (202) the oxidized SiC substrate in a hydrogen-containing environment, in order to passivate deep traps formed in the oxide-forming step, thereby enabling manufacturing of a SiC-based MOSFET (10) having improved inversion layer mobility and reduced threshold voltage. It has been found by the present inventors that the density of DTs increases while the density of NITs decreases when the Si-face of the SiC substrate is subject to rapid oxidation. According to the present invention, the deep traps formed during the rapid oxidation can be passivated by hydrogen annealing, thus leading to a significantly decreased threshold voltage for a semiconductor device formed on the oxide.

A method of forming a semiconductor structure includes providing a semiconductor substrate, performing a hydrogen annealing to the semiconductor substrate, forming a base oxide layer after the step of hydrogen annealing, and forming a high-k dielectric layer on the base oxide layer.

A separation layer is formed on a silicon substrate. An SiGe layer serving as a strain induction layer and a silicon layer serving as a strained semiconductor layer are formed sequentially on the separation layer to prepare a first substrate. The first substrate is bonded to a second substrate made of the same material as the silicon layer of the strained semiconductor layer. The structure is separated into two parts at the separation layer. When the residue of the separation layer and the SiGe layer are removed, and the surface is planarized by hydrogen annealing, an Si substrate having a strained silicon layer on the uppermost surface is obtained.

The preferred embodiment of the present invention provides a novel method of forming MOS devices using hydrogen annealing. The method includes providing a semiconductor substrate including a first region and a second region, forming at least a portion of a first MOS device covering at least a portion of the first active region, performing a hydrogen annealing in an ambient containing substantially pure hydrogen on the semiconductor substrate. The hydrogen annealing is performed after the step of the at least a portion of the first MOS device is formed, and preferably after a pre-oxidation cleaning. The method further includes forming a second MOS device in the second active region after hydrogen annealing. The hydrogen annealing causes the surface of the second active region to be substantially rounded, while the surface of the first active region is substantially flat.

The invention discloses a method and a device for performing inert gas protective cover type annealing on cold-rolled titanium strip coils, and belongs to the technical field of nonferrous metallurgy. The annealing method comprises the following steps of: pressure adjustment, feeding and exhausting, nitrogen displacement, heating and annealing, cooling and discharging. The device comprises a cover type annealing furnace (1), a nitrogen supply device (2) and an argon supply device (3), wherein the nitrogen supply device (2) is communicated with the inner cover of the cover type annealing furnace (1); and the argon supply device (3) is communicated with the inner cover of the cover type annealing furnace (1). Based on the common full hydrogen or nitrogen-hydrogen annealing furnace, the argon supply device is additionally arranged, so that different annealing requirements of the common full hydrogen or nitrogen-hydrogen annealing furnace for cold-rolled steel strips and titanium strip coils are met; and the device has the advantages of high efficiency, process stability, convenience for transformation, multiple purposes and high reliability.

A plug electrode is subject to etch back to remain in a contact hole and expose a barrier metal on a top surface of an interlayer insulating film. The barrier metal is subject to etch back, exposing the top surface of the interlayer insulating film. Remaining element structures are formed. After lifetime is controlled by irradiation of helium or an electron beam, hydrogen annealing is performed. During the hydrogen annealing, the barrier metal is not present on the interlayer insulating film covering a gate electrode, enabling hydrogen atoms to reach a mesa part, whereby lattice defects generated in the mesa part by the irradiation of helium or an electron beam are recovered, recovering the gate threshold voltage. Thus, predetermined characteristics of a semiconductor device having a structure where a plug electrode is provided in a contact hole, via barrier metal are easily and stably obtained when lifetime control is performed.

The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode 15 composed of a translucent conductive oxide film on a p-type GaN layer 14 of a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrode 15 in a gas atmosphere including hydrogen (H₂).