30 results about "Hydrogen annealing" patented technology

A method for forming a semiconductor structure includes: providing a substrate; forming an initial buried layer within the substrate, the initial buried layer containing doped ions; and annealing the initial buried layer to form a buried layer, wherein the annealing gas includes an inert gas and hydrogen, or an inert gas and a hydrogen isotope gas. Since the annealing gas does not contain oxygen, it does not cause excessive consumption of the initial buried layer, thus preventing significant surface depressions. Furthermore, silicon substrates have dangling bonds on their surface; hydrogen annealing allows hydrogen atoms to enter the silicon crystal and bind to these dangling bonds, thereby eliminating interface states. Compared to elemental hydrogen, hydrogen isotopes have higher bond energies with silicon, making them less prone to breakage and thus better eliminating interface states. Moreover, high-temperature hydrogen or hydrogen isotope gas annealing can also eliminate surface and internal voids and defects in the substrate, improving surface roughness.

The application discloses a decarburization annealing method for copper-containing oriented silicon steel with low hydrogen and oxygen control, which comprises the following steps: surface treatment of the oriented silicon steel primary cold-rolled plate is carried out in the heating section of an annealing furnace, the temperature rising rate is controlled within 20-80 DEG C / s, and H2 with a dew point of less than or equal to-40 DEG C is introduced; decarburization is carried out in the soaking section of the annealing furnace with a low-hydrogen annealing atmosphere, the furnace temperature is controlled within 800-850 DEG C, the H2 content is reduced to 1-10%, and the dew point in the furnace is adjusted to less than or equal to 30 DEG C; accurate oxygen control is carried out at the end part of the soaking section of the annealing furnace, the furnace temperature is increased by 5-15 DEG C based on the decarburization furnace temperature, and the oxygen content and surface oxide layer structure of the annealed plate are controlled by adjusting H2 and the dew point. The application adopts the composite technology of low-hydrogen annealing atmosphere decarburization and independent accurate oxygen content control after decarburization, controls the oxygen content and surface oxide layer material of the decarburized oriented silicon steel plate, and prepares the copper-containing oriented silicon steel plate with stable and excellent surface quality, thereby filling the technical blank in the field and having great industrial application value.

The invention discloses a gradient annealing-based TOPCon solar cell and a preparation method thereof, and relates to the technical field of cell production, and the method comprises the steps: carrying out a three-stage gradient annealing process on a silicon-based substrate on which a tunneling oxide layer is formed, and comprises the steps: heating the silicon-based substrate to 400-450 DEG C in a mixed atmosphere of H2 and N2, and filling dangling bonds in the tunneling oxide layer; heating the silicon-based substrate to 600-650 DEG C by adopting a pulse heating mode, and switching the atmosphere into a mixed atmosphere of O2 and N2 to form a SiOxNy transition region; and cooling the silicon-based substrate to 300-350 DEG C, putting the silicon-based substrate into plasma equipment, treating the silicon-based substrate in a mixed atmosphere of H2 and Ar for 3 minutes, and exciting hydrogen free radicals to permeate into the interface to repair the interface defects. According to the method, low-temperature hydrogen annealing is set, H atoms are promoted to diffuse to a SiO2 / Si interface in a low-temperature area, dangling bonds are repaired, Si-O bond rearrangement is induced in a medium-temperature area, a compact tunneling layer is formed, then hydrogen free radicals are excited to permeate to the interface and interface defects are repaired through the plasma treatment step, the minority carrier lifetime is prolonged, and the photoelectric conversion rate is improved.

The present application relates to the technical field of heat treatment, in particular to a quenching heat treatment method for large carburized gear shaft forgings. The method comprises the following steps: S1, carburizing treatment; S2, hydrogen expansion annealing; S3, quenching heating; S4, quenching holding heating; S5, rapid cooling; S6, first low-temperature tempering; and S7, second low-temperature tempering. The present application is a quenching heat treatment process for large carburized steel gear shafts after carburizing in metallurgical products. The process can ensure that the gear teeth area of the large carburized steel gear shaft reaches high hardness and hardening layer depth after quenching, and can significantly reduce the residual stress in the center area of the gear shaft, effectively preventing early fracture of the gear shaft.

This invention relates to a peak-valley confined catalyst structure and a method for preparing a highly oriented spinnable carbon nanotube array. The peak-valley confined catalyst structure comprises a silicon substrate covered with a silica layer, a lower alumina layer, a metal catalyst layer, and an upper alumina layer, stacked sequentially. The contact surface between the lower alumina layer and the metal catalyst layer has a continuous peak-valley structure. The upper alumina layer and the peak-valley morphology work together to restrict the movement and aggregation of the catalyst at high temperatures. Subsequently, carbon nanotube arrays are grown based on the peak-valley confined catalyst structure using a water-assisted chemical vapor deposition method. During this process, the introduction of water vapor effectively removes amorphous carbon from the substrate and the surface of the carbon nanotubes, ensuring high cleanliness of the catalyst and the carbon nanotube array. The high-temperature hydrogen annealing, combined with the peak-valley confined catalyst structure, ensures uniform catalyst particle size and distribution, resulting in a highly oriented spinnable carbon nanotube array.

The invention relates to the technical field of semiconductor production, in particular to a high-growth-rate EPI production method which comprises the following steps: S1, removing oxide on the surface of a silicon substrate by adopting in-situ hydrogen annealing and repairing lattice defects; a gradient temperature rising strategy is adopted in the preheating stage, and slip lines caused by thermal stress are reduced; s2, in a chemical vapor deposition reaction cavity, adopting a double-gas-path injection system, wherein in a main gas path, mixed gas of high-flow SiH2Cl2 and H2 is used as a main silicon source; in the auxiliary gas path, trace SiH4 and HCl are used for inhibiting gas phase nucleation and adjusting the surface reaction activity; s3, adopting a double-area temperature control reaction cavity, wherein a central area is a high-temperature area, and rapid deposition of silicon atoms is promoted; the marginal area is a low-temperature area and inhibits marginal lattice distortion; the pressure of the reaction cavity is controlled to be 50-100 Torr; s4, in-situ doping and real-time monitoring: synchronously introducing phosphorane or diborane in the growth process, monitoring the doping concentration fluctuation in real time through a light emission spectrum, and feeding back and adjusting the gas proportion.

The invention provides a titanium sapphire crystal growth and post-treatment integrated continuous preparation device and method, a heating system of the device is a double-temperature-zone two-section heating body, the temperature gradient in a hearth is controlled through cooperation of an upper-section heating body and a lower-section heating body, and titanium sapphire crystal growth and in-situ constant-temperature annealing are achieved. During crystal growth, Al2O3 and Ti2O3 raw materials are loaded into the crucible, the crucible is integrally placed in the upper-section heating body, the bottom of the crucible is in contact with the heat exchange rod, and parameters such as hearth atmosphere and He gas flow are adjusted to complete crystal growth. And after crystallization is completed, replacing H2 + Ar mixed gas with H2, respectively adjusting the power of the upper and lower heating bodies to form a constant temperature field, and carrying out in-situ constant-temperature hydrogen annealing on the large-size titanium sapphire crystal. The temperature field gradient of crystal growth can be adjusted in real time, the preparation periods of titanium sapphire crystal growth, annealing and the like are shortened, the thermal stress in the crystal is reduced, the Ti < 4 + > concentration in the crystal is reduced, crystal cracking is inhibited, and the optical quality, the FOM value and the yield of the crystal are improved.

The invention discloses a preparation method of a pole piece roller forge piece, and relates to the technical field of equipment manufacturing, and the preparation method comprises the following steps: proportioning raw materials according to designed chemical components, and controlling the chemical components of molten steel to meet target requirements through electric furnace crude smelting and vacuum refining; the molten steel obtained after vacuum refining is subjected to electroslag remelting, and a steel ingot is obtained; the steel ingot is subjected to multi-pass forging, the forging ratio is controlled to be larger than or equal to 2.0, and a pole piece roller blank with the target size is obtained; normalizing, spheroidizing annealing and hydrogen diffusion annealing are conducted on the forged pole piece roller blank; quenching in an oil cooling manner, and sequentially treating the pole piece roller blank subjected to post-forging heat treatment by high-temperature tempering; and sequentially treating the quenched and tempered pole piece roller blank according to a mode of induction heating, quenching cooling and low-temperature tempering. By optimizing the chemical components, the high-temperature hardness keeping capacity of the material is improved, the high-temperature hardness attenuation is reduced, and the problems of poor hardness, high material cost and large structure uniformity and high-temperature hardness attenuation under the high-temperature working condition are solved.

This invention relates to the field of electrocatalytic materials technology, specifically to a NiW2-WO2 / NF composite electrocatalytic material, its preparation method, and its applications. This catalytic material is prepared using nickel foam as a substrate through hydrothermal synthesis and hydrogen annealing reduction, forming a three-dimensional tetrahedral porous structure of NiW2 alloy and WO2 composite. This catalytic material exhibits ultra-high active site density, ultra-low charge transfer resistance, and a superhydrophobic surface, achieving a resistance of 10 mA·cm⁻¹. ‑2 and 1000mA·cm ‑2 The overpotentials were 15mV and 280mV, respectively, and the Tafel slope was 41mV·dec. ‑1 And at 500mA·cm ‑2 It operated stably for 500 hours. In-situ infrared spectroscopy confirmed that it can dynamically regulate the interfacial water structure, with four-coordinated hydrogen-bonded water (4HB-H2O) accounting for 35%, which enhances the connectivity of the hydrogen bond network and effectively reduces the water dissociation energy barrier, making it suitable for industrial-grade high-current water electrolysis for hydrogen production.

The invention relates to the field of metal material preparation, in particular to a preparation method of a small-diameter high-strength antioxidant molybdenum-rhenium alloy wire, which comprises the following steps: proportioning 10-15 wt% of Re, 2-5 wt% of W, 0.5-1.5 wt% of La and the balance of Mo, with the Fisher particle size of high-purity molybdenum powder being 3.0-5.0 [mu] m; argon shield molybdenum ball dispersion ball milling and cold isostatic pressing forming are carried out, and then vacuum sintering, electron beam smelting, rotary swaging, hot drawing, electrolytic polishing and hydrogen annealing are carried out; according to the preparation method, the small-diameter high-strength oxidation-resistant molybdenum-rhenium alloy wire with the diameter of 0.25-0.55 mm is prepared by embedding siliconizing with a coating permeation material containing 2-5% of B, the tensile strength of the alloy wire is larger than or equal to 1200 MPa, the elongation percentage is larger than or equal to 8%, the using temperature can reach 1500 DEG C, no weight loss is generated after the alloy wire is oxidized for 5 h in the 1500 DEG C environment, the process is simple, batch production can be achieved, and the alloy wire is suitable for the fields of the nuclear industry and aerospace.

The invention provides a corrosion-resistant alloy seamless tube manufacturing process. The corrosion-resistant alloy seamless tube manufacturing process comprises the following steps: (1) smelting a steel ingot by adopting a vacuum induction and electroslag remelting process; the steel ingot is peeled, then subjected to homogenization diffusion annealing treatment, and then subjected to forging cogging and segmented cutting, and a round rod pipe blank is obtained; (2) heating the round rod tube blank, and performing hot extrusion to obtain a hollow pierced billet; (3) carrying out hot rolling and sizing treatment on the hollow pierced billet, carrying out heat treatment, straightening, and sequentially carrying out acid pickling and dehydrogenation annealing; and (4) the pipe obtained in the step (3) is subjected to oxygen plasma treatment and then subjected to oxygen permeation treatment, and the corrosion-resistant alloy seamless pipe is obtained. According to the method, plasma treatment of oxygen is carried out on the surface of the seamless tube, then oxygen permeation treatment is carried out, a protective layer which is more compact and stable and more excellent in adhesiveness can be obtained on the surface of the alloy seamless tube, and therefore the corrosion resistance of the seamless tube is effectively improved.

The utility model relates to the technical field of welding wire processing equipment, in particular to stainless steel welding wire hydrogen annealing equipment which comprises an equipment base, a heat treatment tank body is fixedly installed on the top end face of the equipment base, an electric heater is fixedly installed in the center of the inner wall of the heat treatment tank body, and a clamping assembly is arranged in the center of the interior of the heat treatment tank body. An air supply assembly is arranged at the top of the outer wall of the heat treatment tank body, a sealing box door is mounted on one side of the end face of the heat treatment tank body through hinges, and a water storage assembly is arranged at the bottom of the inner side of the equipment base; the hydrogen annealing equipment for the stainless steel welding wires is simple in overall structure, when the hydrogen annealing equipment is used, the stainless steel welding wires can be conveniently clamped and hoisted, the stainless steel welding wires with different lengths and diameters can be fixedly installed according to requirements, and the installation efficiency and installation convenience of the stainless steel welding wires are effectively improved; and meanwhile, water stains and impurities generated in the hydrogen annealing process can be conveniently collected and treated, and the cleaning convenience is greatly improved.

The application discloses a kind of high diffusion coefficient sodium ion battery negative material and preparation method and application, belong to battery material preparation technical field.K 1‑2x TiO 1‑ x The preparation of PO4@C includes the following steps: mixing a phosphorus source, a potassium source and a titanium source, then mixing with a carbon source to obtain a slurry, and drying to obtain a precursor; the precursor is subjected to three-stage treatment: (1) heat treatment under an inert gas atmosphere to a first set temperature; (2) heat treatment of the product of the first stage under a hydrogen atmosphere to 400-600°C; (3) cooling the product of the second stage to a second set temperature at a rate of 10-20°C / min under a hydrogen atmosphere to obtain a sodium ion battery negative material. The preparation method of the application overcomes the defects that the ion channels in the KTOP crystal are limited by the crystal structure and the ion transmission is not smooth, optimizes the crystal structure and ion channels through post-hydrogen annealing and process parameter optimization, improves the diffusion coefficient of the material and improves the battery performance.

The invention relates to the technical field of micro-nano machining and integrated photonics, in particular to a nanoimprint silicon template optimization method for an integrated photonic circuit, and aims to solve the problem that the optical loss of a copied photonic device is large due to the fact that the roughness of the side wall of an existing nanoimprint silicon template is high. In order to solve the problem that the service life of the template is influenced by the performance such as the central wavelength of the device due to the change of waveguide line width caused by the loss of the template after multiple times of imprinting, various optimization schemes which can be implemented independently or in a combined manner are provided; according to the scheme, the method comprises the steps of hydrogen annealing smoothing based on surface atom migration, smoothing based on thermal oxidation and hot reflux, fine smoothing based on cyclic thermal oxidation and wet etching, and conformal thin film deposition based on LPCVD / ALD. The invention further provides the high-smoothness and high-durability functionalized nanoimprint template prepared through the method and application of the high-smoothness and high-durability functionalized nanoimprint template to preparation of low-loss integrated photonic devices. The performance of the imprinting photonic device can be remarkably improved, and the service life of the template can be remarkably prolonged.

The invention discloses a production method for an alloy steel plate with the electroslag ingot finished plate thickness of 40 mm or below. The production method comprises the steps of electroslag ingot cleaning process control, heating process control, dephosphorization process control, cogging process control and secondary rolling process control. Wherein in the electroslag ingot cogging process, the electroslag ingot is loaded into a trolley furnace or a bell-type furnace for hydrogen diffusion annealing after cogging, the charging temperature of the cogging blank is larger than or equal to 300 DEG C, the temperature is increased to 600-650 DEG C after steel braising is conducted for 2 hours, heat preservation is conducted for 72 hours, then the temperature is slowly decreased to 200-220 DEG C within 48 hours, the furnace is discharged, the heating and cooling rate is smaller than or equal to 50 DEG C / h, and a furnace door is strictly prohibited to be opened in the cooling process. And after annealing and discharging, directly cutting with temperature, and cleaning the upper and lower surfaces of the blank surface by adopting a temperature flame scaling cleaning mode until the upper and lower surfaces have complete metallic luster without warping. The method is simple in process, low in equipment investment and obvious in effect, the surface of the steel plate basically does not need to be ground in the later period, and the rejection rate is greatly reduced.

The present application relates to annealing furnace technical field, disclose a kind of full hydrogen formula annealing furnace for steel processing, comprising: annealing furnace main body, it is equipped with the heating cavity for accommodating steel;Heating and temperature control module, it is located on annealing furnace main body, for the steel located in heating cavity is heated treatment;Atmosphere control module, including three gas supply units uniformly distributed on the upper, middle, lower three positions of heating cavity and the gas delivery unit for uniform delivery gas source to each gas supply unit.The present application is used by integrating atmosphere control module, sensing module and control module, realizes the accurate use and regulation and control of hydrogen, it obtains the steel accumulation form data, determines the regulation and control parameter based on algorithm, the yaw angle and pitch angle of the nozzle in gas supply unit are adaptively adjusted, hydrogen gas flow field can dynamically fit the unique three-dimensional profile of each steel coil, solve the problem of uneven heat field caused by irregular morphology such as steel coil tower shape, wrong side etc..

This invention discloses a method for high-quality, clean electroslag ingot smelting in an oxygen-free, low-vacuum environment. It employs a multi-functional protective atmosphere vacuum pressurized electroslag furnace with upper and lower furnace chambers and a dedicated meshing device for sealing. This furnace offers excellent sealing and rapid evacuation, allowing the entire crystallizer to be placed in the lower chamber. The low vacuum prevents slag from being sucked up, ensuring a smooth electroslag remelting process, minimizing slag boiling, stabilizing the molten steel, and resulting in high-quality electroslag ingots. An oxygen detector is used to monitor the oxygen content within the furnace. Vacuuming is initiated when the oxygen content reaches 0 ppm to ensure an oxygen-free environment. Smelting at a vacuum level of 3000–5000 Pa ensures that the molten slag does not detach from the molten steel surface due to evacuation force, while also guaranteeing electroslag remelting under low vacuum conditions. Using refined slag as the furnace slag significantly reduces the formation of inclusions in the electroslag ingots and allows for the smelting of various high-quality, clean, special electroslag steels. Hydrogen diffusion annealing is used to remove hydrogen, ensuring that the hydrogen content in the electroslag ingot is ≤1.0 ppm.

The invention relates to the technical field of annealing furnaces, and discloses an all-hydrogen annealing furnace for steel processing, which comprises: an annealing furnace main body, which is internally provided with a heating cavity for accommodating steel; the heating and temperature control module is arranged on the annealing furnace main body and is used for heating the steel in the heating cavity; and the atmosphere control module comprises three gas supply units uniformly distributed at the upper position, the middle position and the lower position of the heating cavity and a gas conveying unit for uniformly conveying a gas source to each gas supply unit. Through cooperative use of the integrated atmosphere control module, the sensing module and the control module, precise use and regulation and control of hydrogen are achieved, by obtaining steel stacking form data, regulation and control parameters are determined on the basis of an algorithm, the yaw angle and the pitch angle of a spray head in the gas supply unit are adjusted in a self-adaptive mode, and the control precision is improved. A hydrogen gas flow field can be dynamically matched with the unique three-dimensional outline of each coil of steel, and the problem that a thermal field is uneven due to irregular shapes such as tower shapes and misalignment of the steel coils is solved.

A gate electrode is formed inside a trench via a gate insulating film. The gate insulating film formed on a semiconductor substrate is removed. An insulating film is formed on the semiconductor substrate. A p-type base region is formed in the semiconductor substrate. An n-type emitter region is formed in the base region. Hydrogen annealing process is performed to the semiconductor substrate. A boundary between the base region and the emitter region is located at a position deeper than the insulating film formed between a side surface of the trench and the gate insulating film.

The present invention discloses a method for preparing a high-quality graphene-copper composite material by in-situ conversion, belonging to the technical field of composite material preparation. The present invention comprises: (1) low-temperature chemical vapor deposition; (2) cold pressing; (3) high-temperature hydrogen annealing; and (4) densification sintering. In the graphene-copper composite material prepared by the present invention, the graphene has high crystallinity and does not negatively affect the copper substrate during the preparation process. Therefore, the graphene-copper composite material prepared by the present invention has excellent thermal and electrical conductivity.

The invention discloses a titanium alloy plate low-hydrogen annealing method in the technical field of titanium alloy plate heat treatment. The titanium alloy plate low-hydrogen annealing method comprises the following steps that an annealing box with a cover plate is manufactured; a titanium alloy plate to be annealed is stacked in the annealing box, and then the cover plate and the annealing box are sealed; the annealing box is put into an annealing furnace for annealing treatment; and after annealing, taking out the annealing box, air-cooling to room temperature, and then taking out the titanium alloy plate. According to the method, the titanium alloy plates are mainly stacked in the sealable annealing box to be annealed, so that vacuum annealing can be realized in a common annealing furnace, and compared with a mode of directly adopting a vacuum annealing furnace, the method has the advantages that the heating and cooling time in the annealing process can be shortened, and the energy consumption cost is greatly reduced. In addition, the annealing box can be further suitable for annealing treatment of titanium alloy sheets of different specifications in batches, single-batch multi-sheet continuous stacking annealing is achieved, the utilization rate of the annealing box can be increased, the raw material cost can be reduced, and the stability of the single-batch annealing quality is ensured.

The invention discloses a preparation method of an epitaxial layer and a passivation layer of a high electron mobility transistor. The preparation method comprises the following steps: preparing a substrate; preparing an epitaxial layer on one side of the substrate; performing hydrogen annealing treatment on the surface of one side, far away from the substrate, of the epitaxial layer; and preparing a passivation layer on one side, far away from the substrate, of the epitaxial layer. According to the invention, the passivation layer is prepared after the hydrogen annealing treatment is carried out on the surface of the epitaxial layer, so that the surface appearance of the passivation layer can be obviously improved, the roughness is reduced, and the dynamic on-resistance of the high-electron-mobility transistor can be improved.

The invention discloses an electroslag container plate with an ultralow-temperature impact requirement and a preparation method of the electroslag container plate. The electroslag container plate comprises the following chemical components in percentage by mass: less than or equal to 0.20% of C, 0.10-0.50% of Si, less than or equal to 0.90% of Mn, less than or equal to 0.010% of P, less than or equal to 0.005% of S, 3.00-4.00% of Ni, less than or equal to 0.30% of Cr, less than or equal to 0.20% of Mo and the balance of Fe and inevitable impurities. The preparation method comprises the working procedures of smelting, continuous casting, electroslag remelting, heating, rolling, hydrogen diffusion annealing and heat treatment. The thickness of the steel plate provided by the invention is 220mm-250mm, the yield strength is greater than or equal to 350MPa, the tensile strength is 485-585MPa, the ductility is greater than or equal to 24.5%, the impact energy unit value at the position of 1 / 2 of the transverse plate thickness of the steel plate at the temperature of-111 DEG C is greater than or equal to 83.3 J, the internal and external quality is excellent, and the design and manufacturing of key equipment such as ultralow-temperature storage tanks are completely met.

The invention provides a high-strength low-heat-capacity meter heat insulation reflecting plate which comprises a base material layer, a transition layer and a surface reflecting layer which are sequentially arranged from a non-working face to a working face, and the thicknesses of the base material layer, the transition layer and the surface reflecting layer are sequentially decreased. The surface reflecting layer comprises a system A or a system B, the system A is used for oxidizing or weakly reducing atmosphere, and the system B is used for strong reducing atmosphere. The invention further provides a preparation method of the high-strength low-heat-capacity rice heat insulation reflecting plate. The preparation method comprises the steps of raw material pretreatment, slurry preparation, green body forming, drying, sintering, aftertreatment and the like. The high-temperature industrial kiln integrates the advantages of low thermal inertia, high structural strength, high thermal reflectivity, excellent thermal shock resistance, atmosphere stability and the like, has breakthrough progress in the high-temperature industrial kiln industry, keeps relatively low thermal inertia while achieving ultralow heat dissipation loss, is remarkable in comprehensive energy-saving benefit, and is suitable for industrial production. And the requirements of high-end fields such as silicon steel full-hydrogen annealing furnaces and the like on high-performance furnace lining materials are met.

This invention relates to a semiconductor thin film epitaxy method, comprising the following steps: (1) preparing an epitaxial substrate; (2) preparing an etched structure layer comprising a plurality of longitudinal etched structures on the surface of the epitaxial substrate; (3) preparing a porous structure layer below the etched structure layer; and (4) epitaxially growing a target semiconductor thin film above the etched structure layer. This invention incorporates an etched structure layer during the epitaxy process, where the unetched areas retain a smooth material surface, allowing direct use for the epitaxy of high-quality semiconductor thin films. This eliminates or reduces the need for post-processing requirements such as hydrogen annealing, significantly reducing process difficulty and cost.

The application provides a high-purity alumina substrate and a preparation method and application thereof, the preparation method adopts a pure 99.99% alumina system without additives, a green body is prepared through flow casting, and the green body is subjected to 1600-1700 DEG C air pre-sintering, 1800-1880 DEG C pure hydrogen final sintering, double-side precision grinding and polishing and 1550-1650 DEG C pure hydrogen annealing, and a high-purity alumina substrate with excellent comprehensive performance is prepared. Through the synergistic process of two-stage atmosphere sintering and polishing before annealing, grain uniform refinement and high densification are realized, the product has a bending strength of greater than or equal to 660 MPa, a Young's modulus of greater than or equal to 400 GPa, a thermal conductivity of greater than or equal to 29 W / (m*K), a surface roughness Ra of less than or equal to 2 nm, a warpage of less than or equal to 0.05%, and a visible light transmittance of 76%-86%. The substrate is particularly suitable for the field of advanced semiconductor packaging and has a wide industrial application prospect.

The invention discloses a preparation method of metal vanadium. The preparation method comprises the following steps: firstly, carrying out dehydration pretreatment on vanadium pentoxide under a vacuum condition; then carrying out electrolytic reduction for 2-4 hours in NaCl-KCl mixed molten salt at the temperature of 600-800 DEG C by taking dehydrated vanadium pentoxide as a cathode and graphite as an anode; cooling a product after the reaction, and separating and washing to obtain metal vanadium; and finally, annealing at 900-1000 DEG C in a hydrogen atmosphere for 1-3 hours for purification. According to the method, vanadium pentoxide is efficiently reduced at the relatively low temperature (700-800 DEG C), the production period is shortened, and energy consumption is reduced; a non-corrosive molten salt system is adopted, so that the problems of equipment corrosion and environmental pollution are solved; through the synergistic effect of molten salt electrolysis and hydrogen annealing, the purity gt is stably prepared; the metal vanadium powder with the purity of 99.9%, the single phase and the regular shape is obtained, and the product quality is high.

This invention relates to the preparation of an anode catalyst and a method for the highly selective electrocatalytic preparation of glycolates from ethylene glycol. The main challenge is addressing the low selectivity and insufficient conversion rates in current ethylene glycol electrocatalytic oxidation reactions. This invention employs a three-step method—hydrothermal-hydrogen annealing-impregnation—to prepare a Pd-NiCrO2 catalyst. The Pd-NiCrO2 catalyst exhibits strong activity, high selectivity, and good stability in the electrocatalytic oxidation of ethylene glycol, achieving a conversion rate of 100 mA / cm². 2 At the current density, the operating voltage is only 0.70 V; in addition, the chronocurrent stability of this anode catalyst can be maintained at more than 80% under different voltages, and the chronocurrent stability at 1.0 V can reach more than 91%.

The invention relates to a metal wire production process. The metal wire production process comprises the following steps: introducing a metal wire raw material into a heat treatment channel in an inert gas atmosphere, and heating until recrystallization; the surface of the metal wire is covered with an oxide film in the recrystallization process, and the stability of the oxide film is higher than that of metal oxide corresponding to the metal wire; and performing quenching treatment on the metal wire in the recrystallization state to obtain the target metal wire. The inert gas is used as a protective atmosphere instead of hydrogen, so that the safety risk that hydrogen is flammable and combustible is thoroughly avoided, and the problem of insufficient plasticity caused by non-uniform grain structure after traditional hydrogen annealing is solved; meanwhile, a sub-crystal structure is formed through ultra-fast cold freezing high-density dislocation, thermal stress is relieved through heat conduction buffering and expansion coefficient differences of the oxide film, and finally the ductility and rigidity of the metal wire are synchronously enhanced; and the target metal wire can be stably drawn to the superfine specification.

A gate electrode is formed inside a trench via a gate insulating film. The gate insulating film formed on a semiconductor substrate is removed. An insulating film is formed on the semiconductor substrate. A p-type base region is formed in the semiconductor substrate. An n-type emitter region is formed in the base region. Hydrogen annealing process is performed to the semiconductor substrate. A boundary between the base region and the emitter region is located at a position deeper than the insulating film formed between a side surface of the trench and the gate insulating film.