75results about How to "Improve dielectric breakdown strength" patented technology

A thermally-conductive, electrically insulative interface for conductively cooling a heat-generating source, such as an electronic component, having an associated thermal dissipation member such as a heat sink. The interface is provided as a cured sheet of a curable material formulated as a blend of a curable silicone binder, and a particulate alumina, i.e., aluminum oxide (Al2O3), filler. The interface is observed to exhibit a thermal conductivity of at least about 0.8 W/m-K and a wet dielectric breakdown strength of at least about 475 Vac/mil.

An interconnect structure is provided in which the conductive features embedded within a dielectric material are capped with a metallic capping layer, yet no metallic residue is present on the surface of the dielectric material in the final structure. The inventive interconnect structure has improved dielectric breakdown strength as compared to prior art interconnect structures. Moreover, the inventive interconnect structure has better reliability and technology extendibility for the semiconductor industry. The inventive interconnect structure includes a dielectric material having at least one metallic capped conductive feature embedded therein, wherein a top portion of said at least one metallic capped conductive feature extends above an upper surface of the dielectric material. A dielectric capping layer is located on the dielectric material and it encapsulates the top portion of said at least one metallic capped conductive feature that extends above the upper surface of dielectric material.

Provided is a manufacturing method of a semiconductor device which comprises (a) depositing a first insulating film over a wafer, (b) forming an interconnect opening in the first insulating film, (c) forming, in the interconnect opening, an interconnect having a conductor film comprised mainly of copper, (d) forming a taper at a corner of said conductor film on the opening side of the interconnect opening, and (e) depositing a second insulating film over the first insulating film and interconnect. The present invention makes it possible to improve dielectric breakdown strength between interconnects each having a main conductor film comprised mainly of copper.

The present invention provides a curable organopolysiloxane composition capable of producing a cured article that can be used as a transducer and provided with excellent mechanical characteristics and/or electrical characteristics. The present invention also relates to a novel curable organopolysiloxane composition for transducer use comprising a curable organopolysiloxane composition and a compound having a highly dielectric functional group.

A nanolaminate thin film and a method for forming the same using atomic layer deposition are disclosed. The method includes forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing a first precursor and a first reactant into an enclosure containing the substrate. A layer of silicon dioxide is formed on at least a portion of the aluminum oxide layer by sequentially pulsing a second precursor and a second reactant into the enclosure to form a nanolaminate thin film.

The present invention is a low firing temperature, composite thick film dielectric layer for an electroluminescent display. The composite thick film dielectric layer comprises;

• • (a) a lower zone layer of a thick film composition comprising;
    • one or more of lead magnesium niobate (PMN), lead magnesium niobate-titanate (PMN-PT), lead titanate, barium titanate and lead oxide; and
    • a glass frit composition comprising lead oxide, boron oxide and silicon dioxide;
  • (b) an upper zone comprising at least one layer of lead zirconate titanate (PZT) and/or barium titanate; and
  • (c) an intermediate composite zone comprising a composite of (a) and (b).

Electrical insulation system with improved electrical breakdown strength, including a hardened polymer component having incorporated therein a filler material and a nano-scale sized filler material. The hardened polymer component is selected from epoxy resin compositions, polyesters, polyamides, polybutylene terephthalate, polyurethanes and polydicyclo-pentadiene. The filler material has an average particle size within the range of 1 μm-500 μm, and is present in a quantity within the range of 40%-65% by weight, calculated to the total weight of the insulation system. The nano-scale sized filler material is a pretreated nano-scale sized filler material, having been produced by a sol-gel process. The nano-scale sized filler material is present within the electrical insulation system in an amount of about 1%-20% by weight, calculated to the weight of the filler material present in the electrical insulation system.

To provide a semiconductor device in which dielectric breakdown strength in a peripheral region is increased without increasing on-resistance. An IGBT comprises a body region, guard ring, and collector layer. The body region is formed within an active region in a surface layer of a drift layer. The guard ring is formed within a peripheral region in the surface layer of the drift layer, and surrounds the body region. The collector layer is formed at a back surface side of the drift layer, and is formed across the active region and the peripheral region. A distance F between a back surface of the guard ring and the back surface of the drift layer is greater than a distance between a back surface of the body region and the back surface of the drift layer. A thickness H of the collector layer in the peripheral region is smaller than a thickness D of the collector layer in the active region.

An electromagnetic field detecting element 10 includes a lamination of three insulation layers 2, 3, and 4. The dielectric breakdown strength of the insulation layer 3 is greater than the dielectric breakdown strengths of insulation layers 2 and 4. The three insulation layers 2, 3, and 4 are disposed between a pair of electrodes 5 and 6. Boundaries 7 and 8 on both ends of an overlapping region of the opposing surfaces 5a and 6a in a Z direction are apart from the insulation layer 3 by thicknesses t1 and t3 of the insulation layers 2 and 4, respectively. Between the pair of electrodes 5 and 6, ballistic current paths interposing therebetween the insulation layer 3 are formed by applying, between the pair of electrodes 5 and 6, an electric field having a magnitude which causes dielectric breakdown in the insulation layers 2 and 4 while causing no dielectric breakdown in the insulation layer 3. Thus, it is possible to perform at a room temperature a highly efficient electromagnetic field detection utilizing AB effect or AC effect.

In one aspect of the present invention, a method for increasing the dielectric breakdown strength of a polymer is described. The method comprises providing the polymer and contacting a surface of the polymer in a reaction chamber with a gas plasma, under specified plasma conditions. The polymer is selected from the group consisting of a polymer having a glass transition temperature of at least about 150° C., and a polymer composite comprising at least one inorganic constituent. The contact with the gas plasma is carried out for a period of time sufficient to incorporate additional chemical functionality into a surface region of the polymer film, to provide a treated polymer. Also provided are an article and method of manufacture.

A semiconductor device includes; a semiconductor layer mainly made of GaN; a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer. Tthe protective film includes: a first layer made of Al₂O₃ and arranged adjacent to the semiconductor layer; a second layer made of an electrical insulation material different from Al₂O₃ and formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The electrode is located inside of the opening structure.

The present invention provides a polymer actuator which has excellent flexibility, excellent tensibility and high dielectric breakdown strength, while having low temperature dependence of characteristics such as elastic modulus, and which can be driven even by low electric field. The present invention relates to a polymer actuator which is characterized in that: the storage modulus (E'(20°C)) as determined by dynamic viscoelasticity measurement at a frequency of 1 Hz at a temperature of 20°C is 0.5 MPa or less; the ratio of the storage modulus (E'(-20°C)) as determined by dynamic viscoelasticity measurement at a frequency of 1 Hz at a temperature of -20°C relative to the storage modulus (E'(20°C)), namely E'(-20°C)/E'(20°C) is 5.0 or less; and the ratio of the storage modulus (E'(40°C)) as determined by dynamic viscoelasticity measurement at a frequency of 1 Hz at a temperature of 40°C relative to the storage modulus (E'(20°C)), namely E'(40°C)/E'(20°C) is 0.5 or more.

The invention provides a ceramic material with high energy storage performance and ultrafast discharge rate and a preparation method thereof, the chemical formula of the ceramic material is (1-x) (Na0.5Bi0.5) 0.7 Sr0.3TiO3-xBi (Mg2/3Nb1/3) O3, and x is more than or equal to 0.05 and less than or equal to 0.20. The preparation method comprises the following steps: (1) uniformly mixing SrCO3, Na2CO3, TiO2, Bi2O3, MgO and Nb2O5 to obtain raw material powder, briquetting, presintering, crushing and sieving to obtain presintered powder; (2) carrying out ball milling on the presintered powder to obtain raw material powder; and (3) tabletting and molding the raw material powder, and sintering into porcelain to obtain the ceramic material with high energy storage performance and ultrafast discharge rate. The ceramic material has high energy storage performance and excellent charging and discharging performance, is a promising high-performance dielectric candidate material, and has the characteristics of environmental friendliness, high practicability and the like.

A trench isolation region separating active regions in which MISFETs are formed includes: side insulating films covering the sides of a trench; polycrystalline semiconductor layers of a first conductivity type covering the respective sides of the side insulating films; and a polycrystalline semiconductor layer of a second conductivity type filling a gap between the polycrystalline semiconductor layers of the first conductivity type. Two pn junctions extending along the depth direction of the trench are formed between each of the polycrystalline semiconductor layers of the first conductivity type and the polycrystalline semiconductor layer of the second conductivity type. Upon application of a voltage between the active regions, a depletion layer expands in one of the pn junctions, so that the voltage is also partly applied to the depletion layer. As a result, the concentration of electric field in the side insulating films is relaxed.

A film including 70 to 99 weight percent of an amorphous, high heat copolycarbonate having a glass transition temperature of at least 170° C., preferably 170 to 230° C., more preferably 175 to 200° C., and 1 to 30 weight percent of a cyclic olefin copolymer each based on the total weight of polymers in the film; wherein the film has a dielectric breakdown strength of greater than 700 Volts/micrometer, preferably 700 to 1250 Volts/micrometer at 150° C., is provided. Methods for the manufacture of the film and articles including the films are provided.

The invention discloses a production process for a photovoltaic cable with high electric conductivity. The production process comprises conductor core processing, insulating layer processing, packaging, cooling, character printing and forming a cable, and package examining. Particularly, the production process comprises the following steps: (a) conductor core processing: preparing a multilayer conductor core through intertwisting by a wire twisting machine; (b) insulating layer processing: forming an insulating layer through high-temperature extruding and flowing out of a fluorine adding mold port; (c) protecting layer processing: mixing polytetrafluoroethene with extrusion assisting agent, preparing a product after procedures such as extrusion, (d) packaging: packaging the conductor core by the insulating layer; (e) cooling: cooling the insulating layer, and extruding the protecting layer on the insulating layer; (f) character printing and forming the cable: printing characters on the surfaces of wires, and preparing the cable through the wires; and (g) package examining: performing quality examining on the cable, and warehousing the packaged products. The solar photovoltaic cable prepared according to the method of the invention has advantages of excellent corrosion resistance, high oil resistance, high strong-acid and strong-base resistance, and high oxidation resistance. Furthermore the specific intertwisted structure of the conductor core realizes more stable use performance and longer service life of the cable.

The invention discloses a preparation method of barium strontium titanate based aluminum oxide composite ceramic with high energy storage density. According to the method, firstly, raw materials, BaCO3, SrCO3 and TiO2 are prepared according to the chemical formula Ba0.4Sr0.6TiO 3, then ground, dried, sieved and calcined for 3 hours at the temperature of 1,150 DEG C, and Ba0.4Sr0.6TiO 3 powder is prepared; secondarily, the Ba0.4Sr0.6TiO 3 powder and Al2O3 powder are prepared in the mass ratio being (100-x):x, wherein x ranges from 1 to 5, the powder is ground, dried and sieved, and ceramic powder is prepared; the ceramic powder is put in a mold and sintered in a vacuum environment at the temperature of 1,000 DEG C through a discharge plasma sintering system, and a ceramic sintered body is prepared; the ceramic sintered body is subjected to thermal treatment for 3 hours at the temperature of 1,100 DEG C in the air atmosphere, and the barium strontium titanate based aluminum oxide composite ceramic with high energy storage density is prepared. The dielectric breakdown strength of the prepared composite ceramic can reach 300 kV/cm at the room temperature, and the energy storage density can reach 1.69 J/cm<3> at the room temperature. The prepared barium strontium titanate based aluminum oxide composite ceramic with high energy storage density can be used for components such as a high-density energy storage capacitor and the like and has great application value in the high-power and impulse-power fields.