5 results about "Dielectric breakdown strength" patented technology

[Problem] To provide a heat-curable resin composition that achieves both high heat conductivity and dielectric breakdown resistance, that can form a cured product which has a highly smooth surface, and that has excellent storage stability at normal temperatures. [Solution] An epoxy resin, a thermally conductive filler, a phosphate ester-based wetting dispersant, and a urea-based rheology modifier are added to a thermosetting resin, the content of the phosphate ester-based wetting dispersant and the content of urea-based rheology modifier are adjusted to be in respective specific ranges, and a thixotropic index at 25°C is adjusted to be not less than 1.0 but less than 1.4.

To provide a resin composition, pellets, and molded articles that are excellent in flame retardancy and heat resistance, and that have a high dielectric breakdown strength retention rate. The resin composition according to this disclosure comprises 100 parts by mass of a resin component consisting of (a) 80 to 100 parts by mass of a polyphenylene ether resin and (b) 0 to 20 parts by mass of a styrene resin, (c) a phosphate compound having an aromatic ring substituted with a hydrocarbon group, and (d) a condensed phosphate ester flame retardant, wherein the total content of (c) the phosphate compound having an aromatic ring substituted with a hydrocarbon group and (d) the condensed phosphate ester flame retardant is 10 to 25 parts by mass per 100 parts by mass of the resin component, and the mass ratio (c) / (d) of the content of (c) the phosphate compound having an aromatic ring substituted with a hydrocarbon group and (d) the condensed phosphate ester flame retardant is 18 / 82 to 90 / 10.

The application belongs to the technical field of dielectric materials, and provides a bismuth-based perovskite ceramic with a self-absorption doping strategy and a preparation method.The chemical formula of the bismuth-based perovskite ceramic is (1-x)(0.7BiFeO3-0.3SrTiO3)-xBi2Ti2O7, wherein 0x≤0.08.In the embodiment of the application, Bi2Ti2O7 (BTO) secondary phase which is prone to appear in bismuth-based perovskite is used as a doping component to improve the dielectric breakdown strength of BiFeO3-SrTiO3 (BFST) solid solution ceramic.After twice solid-phase sintering, the BFST-BTO solid solution ceramic is formed by mixing and sintering again, and the incorporation of BTO improves the dielectric breakdown strength and energy storage density of the BFST-based ceramic, thereby providing a new strategy for improving the dielectric breakdown strength without introducing new elements, and having potential application value for improving the energy storage performance of other bismuth-based ceramics.

Provided is a silicon nitride substrate that has greatly improved strength and still maintains various characteristics such as thermal conductivity and dielectric breakdown strength, even when a large amount of iron or another inevitable substance is included, and a production method for the silicon nitride substrate. This silicon nitride substrate 1 includes iron (Fe). The silicon nitride substrate 1 is characterized in that the average major axis diameter, the average minor axis diameter, and the average aspect ratio (average major axis diameter / average minor axis diameter) of silicon nitride particles 11 at a 64 μm×48 μm mirror-polished surface as measured by observation with a scanning electron microscope are 5.5–9.0 μm, 2.2–3.1 μm, and 2.4–3.8, respectively.

The application belongs to the technical field of capacitor film preparation, and particularly relates to a preparation method of a multilayer composite structure capacitor film. The film has a three-layer composite structure of a surface layer / a core layer / a surface layer, the surface layer material comprises high isotactic polypropylene, the core layer material comprises an electrical grade polypropylene, a bimodal polypropylene and an amino-terminated hyperbranched polyamide-amine with a specific structure. By adopting a multilayer co-extrusion casting, longitudinal stretching and segmented transverse stretching process, and performing high-temperature stress relaxation and segmented cooling solidification after transverse stretching, the film has a low high-temperature thermal shrinkage rate and a high high-temperature dielectric breakdown strength.