976results about "Electrostatic holding devices" patented technology

An electrostatic chuck capable of suppressing variations in the in-plane temperature distribution of a substrate during processing. [Solution] An electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200 supporting the dielectric substrate 100. The base plate 200 is formed with a coolant flow path 260 through which a coolant passes, and a through hole 230. In top view, the coolant flow path 260 has a branching portion 263 at which the coolant flow path 260 branches into a first flow path 261 and a second flow path 262, and a junction portion 264 at which the first flow path 261 and the second flow path 262 join again. The through hole 230 is formed to penetrate a portion of the base plate 200 between the first flow path 261 and the second flow path 262.

A cluster tool for fabricating substrates includes a factory interface; a first processing mainframe coupled to the factory interface, including: a processing chamber monolithic structure including four processing chambers in the same housing; four load locks coupled to the processing chamber monolithic structure, each load lock including a heater assembly configured to increase the temperature of a substrate disposed in the load lock; and a swapper assembly disposed between the four load locks and the processing chamber monolithic structure, wherein the swapper assembly includes four swappers, each swapper configured to swap substrates between one processing chamber and one load lock along a linear trajectory.

A placement stage includes: a wafer placement part having a placement surface and a first through hole; a base bonded to a rear surface of the wafer placement part by a first adhesive layer, and including a second through hole formed in the base, the second through hole communicating with the first through hole; a sleeve installed in the second through hole to be detachable from the base; and the sealing member installed between the rear surface and the sleeve to be spaced apart from the first adhesive layer so as to seal the first adhesive layer. A convex portion is formed to extend on an outer circumference or an inner circumference of a tip end of the sleeve, and the sealing member is pressed against a tip end surface of the sleeve to expand and contract.

A substrate support assembly includes a first puck plate including one or more first functional elements, and a dielectric cooling plate is bonded to the first puck plate. The dielectric cooling plate includes one or more first channels for a coolant to flow therethrough, and one or more second channels for a gas to flow therethrough.

To provide an electrostatic chuck capable of suppressing the occurrence of discharge in a gas groove.SOLUTION: An electrostatic chuck 10 includes a first portion 101 including a surface 110 on which a substrate W is placed, a second portion 102 protruding further outward from the outer peripheral edge of the first portion 101 and being thinner than the first portion 101, an internal electrode 140 provided inside the second portion 102, and a gas groove 181 formed on a surface 180 of the second portion 102. In a top view, the gas groove 181 is formed at a position that does not overlap the internal electrode 140.SELECTED DRAWING: Figure 1

Embodiments of electrostatic chucks (ESCs) are provided herein. In some embodiments, an electrostatic chuck includes: a dielectric plate having an upper surface and a plurality of mesas extending from the upper surface to a first height to at least partially define a support surface for the substrate; four backside gas cooling zones disposed in the dielectric plate; four gas channels disposed in the dielectric plate and corresponding to the four backside gas cooling zones, wherein the four gas channels are fluidly independent within the dielectric plate and extend from a lower surface of the dielectric plate to a plurality of cooling gas outlets extending to the upper surface within each corresponding cooling zone; a plurality of seal rings extending from the upper surface of the dielectric plate to the first height and defining the four backside gas cooling zones; and one or more electrodes disposed in the dielectric plate.

Disclosed are an electrical feedthrough connector, a substrate support assembly, and a method for feeding electrical signals to a processing chamber. The electrical feedthrough connector includes a first receptacle including a first electrical socket; an interface body, and a second receptacle including a second electrical socket. The interface body includes a first side, a second side, and a solid part disposed between the first side and the second side. The first side is coupled with the first receptacle, and the second receptacle is coupled with the second side. The solid part includes a conductive path embedded in a plurality of dielectric layers; and the conductive path is configured to provide an electrical connection between the first electrical socket and the second electrical socket. The substrate support assembly includes the electrical feedthrough connector. The method utilizes the electrical feedthrough connector to provide electrical signals to electrodes of an electrostatic chuck.

An adaptive wearable article can include an electroadhesive clutch secured to a textile and extending around at least a portion of an opening. The clutch can include a first conductive member and a first polymeric substrate applied to the first conductive member and having a stiffness greater than a stiffness of the first conductive member, and the clutch can include a second electrode assembly comprising a second conductive member configured to partially overlay the first conductive member. The second electrode assembly can include a second conductive member and a second polymeric substrate applied to the second conductive member, the second polymeric substrate having a stiffness greater than a stiffness of the second conductive member, wherein the first and second conductive members are proximate each other with the first and second polymeric substrates distal with respect to each other.

A method for bonding components of an electrostatic chuck includes applying a first melting point depressing layer (MDL) to a bottom surface of a first puck plate including one or more functional elements of an electrostatic chuck. A second MDL is applied to a top surface of a second puck plate including one or more functional elements of the electrostatic chuck, and a metal interlayer is provided between the first MDL and the second MDL. The first puck plate, the metal interlayer, and the second puck plate are aligned to form a puck assembly, and the puck assembly is heated, to a temperature at or near the eutectic temperature of the first MDL or the second MDL, to thermally bond the first puck plate to the metal interlayer and the metal interlayer to the second puck plate.

Embodiments of an electrostatic chuck are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes a plate having a first side and a second side opposite the first side, a first electrode embedded in the plate proximate the first side, a second electrode embedded in the plate proximate the second side, a plurality of conductive elements coupling the first electrode to the second electrode, a first gas channel disposed within the plate and between the first electrode and the second electrode, a gas inlet extending from the second side of the plate to the first gas channel; and a plurality of gas outlets extending from the first side of the plate to the first gas channel.

To provide an electrostatic chuck capable of preventing a support plate from deforming although a structure connected between a heater layer and a bypass layer by welding.SOLUTION: An electrostatic chuck 10 includes a dielectric substrate 100 and a heater unit 300 for heating the dielectric substrate 100. The heater unit 300 includes: a sub heater layer 330 for receiving the supply of electric power to generate heat; a bypass layer 370 having a part welded to the sub heater layer 330; and a pair of support plates 310 sandwiching the sub heater layer 330 and the bypass layer 370 therebetween. When using a part made by welding the sub heater layer 330 and the bypass layers 370 as a weld part 301, at least one of the pair of support plates 310 has an opening 311 at a position facing the weld 301.SELECTED DRAWING: Figure 8

A power tool includes an electrostatic clutch assembly disposed between a motor and an end effector. A control circuit causes a first voltage to be applied to a first electrode of the electrostatic clutch assembly and a second voltage to be applied to a second electrode of the electrostatic clutch assembly, the first voltage being different from the second voltage, generating a first attractive force between the first and second electrodes, causing a shaft and a clutch housing to be coupled to each other when a torque on one of the shaft or the clutch housing is less than or equal to a first threshold value, and allowing the one of the shaft or the clutch housing to rotationally slip relative to the other of the shaft or the clutch housing when the torque on the one of the shaft or the clutch housing exceeds the first threshold value.

To provide an electrostatic chuck that can prevent a variation in the in-plane temperature distribution of a substrate during processing.SOLUTION: An electrostatic chuck 10 comprises a dielectric substrate 100, an attraction electrode 130 provided inside the dielectric substrate 100, and an RF electrode 140 provided inside the dielectric substrate 100. In a top view, the RF electrode 140 is provided within a range where its outer peripheral side end is located inside an outer peripheral side end of the attraction electrode 130.SELECTED DRAWING: Figure 2

A workpiece attraction device is provided that can dechuck (separate) the attracted workpiece in a short time and reliably even when transporting thin workpieces such as paper, cloth, or resin films. A workpiece attraction device includes: an electrostatic attraction body (1) capable of attracting a workpiece (W) to a workpiece attraction surface (1a) by applying a voltage to an attraction electrode (4a, 4b); and a workpiece separation body (5) that is interposed between an attracted workpiece and the electrostatic attraction body, and assists in separating the workpiece from the workpiece attraction surface after application of voltage to the attraction electrode is stopped. In the workpiece attraction device, the workpiece separation body has a plurality of opening portions (6) for applying a workpiece attraction force, generated on the workpiece attraction surface, toward a workpiece, the workpiece separation body is partitioned into the opening portions by a lattice portion (7) so that the opening portions are substantially uniformly present within a plane of the workpiece separation body, and in a plan view from a workpiece side with a workpiece attracted, the attraction electrode of the electrostatic attraction body does not face the lattice portion of the workpiece separation body.

To provide an electrostatic chuck capable of making the in-plane temperature distribution of a substrate during processing more uniform than ever before.SOLUTION: An electrostatic chuck 10 includes a dielectric substrate 100 having a through hole 150 formed therein, an adsorption electrode 130 built into the dielectric substrate 100, and a heater unit 300 that heats the dielectric substrate 100. The adsorption electrode 130 includes a circular opening 131 formed therein that overlaps with the through hole 150 in a top view, and the heater unit 300 includes a circular opening 302 formed therein that overlaps with the through hole 150, and the diameter D2 of the opening 302 is larger than the diameter D1 of the opening 131.SELECTED DRAWING: Figure 2

A rotatable drum is provided for supporting a substrate. The rotatable drum includes a curved drum surface for supporting the substrate. The curved drum surface includes a dielectric portion and an electrode coupled to a power source. The electrode is electrically coupled to the curved drum surface and capable of chucking and dechucking the substrate from the curved drum surface at one or more circumferential segments of the curved drum surface.

An electrostatic chuck device is provided with: an electrostatic chuck member containing a ceramic material; a susceptor containing silicon carbide as a material; and a bonding layer comprising a metal material and bonding the electrostatic chuck member and the susceptor, in which the electrostatic chuck member contains 50 vol% or more of alumina when the entire electrostatic chuck member is 100 vol%, and the susceptor contains 75 vol% or more and 100 vol% or less of silicon carbide when the entire susceptor is 100 vol%.

A wafer mounting table 10 comprises: a ceramic plate 20 that has a wafer mounting surface 21 on the upper surface thereof and in which an electrostatic electrode 22 is installed; a cooling plate 30 that is provided on the lower surface of the ceramic plate 20; and a refrigerant flow passage 32 that is provided inside the cooling plate 30. The cooling plate 30 has a plurality of upper and lower cooling plate layers 31U and 31L arranged in the vertical direction. The upper cooling plate layer 31U and the cooling plate layer 31L having a vertical relationship therebetween are bonded by a partition plate 34. Sections of the refrigerant flow passage 32 excluding an inlet 32a and an outlet 32b are divided into two levels in the vertical direction by the partition plate 34.

To provide an electrostatic chuck and a substrate fixing device for further suppressing occurrence of abnormal discharge.SOLUTION: A substrate fixing device 1 includes an electrostatic chuck 30 having: a substrate 31 in which one face serves as a mounting surface of an adsorption object; and a gas hole 33 which is a through-holes penetrating the substrate. A porous body 60 containing angular ceramic particles is disposed in the through-hole. The substrate and the angular ceramic particles contain same oxide ceramics. The oxide ceramics is alumina. Furthermore, the substrate and the porous body contain an oxide of at least 2 kinds of same elements, and the composition ratio of the oxide in the substrate is set equal to the composition ratio of the oxide in the porous body.SELECTED DRAWING: Figure 1

To provide a holding device capable of improving a processing speed in an outer peripheral area of a target to be held.SOLUTION: In an electrostatic chuck 1 comprising a tabular member 10, a base member 20 and a junction layer 30 joining the tabular member 10 and the base member 20, the tabular member 10 includes an inside part 10a in a central part in a surface direction and an outside part 10b in an outer peripheral part in the surface direction. The junction layer 30 includes a first junction layer 30a, which is disposed between the inside part 10a of the tabular member 10 and the base member 20, and a second junction layer 30b which is disposed between the outside part 10b of the tabular member 10 and the base member 20. A total value of thermal resistance in the outside part 10b of the tabular member 10 and thermal resistance in the second junction layer 30b is smaller than a total value of thermal resistance in the inside part 10a of the tabular member 10 and thermal resistance in the first junction layer 30a.SELECTED DRAWING: Figure 2

A method for bonding components of an electrostatic chuck includes applying a first melting point depressing layer (MDL) to a bottom surface of a first puck plate. A second MDL is applied to a top surface of a second puck plate. The first puck plate, and the second puck plate are heated to a temperature at or near the eutectic temperature of the first MDL or the second MDL, to thermally bond the first puck plate and the second puck plate.

Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, and electrostatic chuck base components prepared by an additive manufacturing technique.

To provide an electrostatic chuck capable of suppressing variation in in-plane temperature distribution of a substrate during a process.SOLUTION: An electrostatic chuck 10 includes a dielectric substrate 100, an RF electrode 140 provided inside the dielectric substrate 100, a base plate 200 formed of metal and bonded to the dielectric substrate 100, and a plurality of connection members 400 electrically connecting the RF electrode 140 and the base plate 200. The dielectric substrate 100 includes a plurality of gas holes 114 in a top view. The connection members 400 and the gas holes 114 are arranged alternately in a circumferential direction.SELECTED DRAWING: Figure 2

To provide a substrate support assembly including a lamella ceramic structure for a wafer processing chamber in a semiconductor manufacturing operation and a method for forming the same.SOLUTION: A substrate support assembly 300 includes a pedestal body 302 that includes or consists of a monolithic ceramic body, a heater element 304 located in the pedestal body, and an RF antenna 306 located in the monolithic ceramic body. One or more power lines 312 supply power to the heater element and RF antenna. A lamella structure 316 is formed or included within the pedestal body, the lamella structure includes two layers 318 and 320 that have a thermal conductivity different from the thermal conductivity of the pedestal body and are vertically arranged above and below in a layered or lamella arrangement.SELECTED DRAWING: Figure 3

An electrostatic adsorption tool includes an electrostatic adsorption power generation member in which an electrode element group is embedded. The electrostatic adsorption power generation member electrostatically adsorbs a thin object by applying voltage to the electrode element group. The electrostatic adsorption power generation member includes, at least on an adsorption surface that adsorbs the thin object, a first water repellent insulation layer made of a water repellent material.

An electrostatic chuck according to the present disclosure includes a plate-shaped body including an adsorption surface for mounting a workpiece, a base, and an electrode film located between the plate-shaped body and the base. The plate-shaped body and the base are made of sapphire. The angle between the adsorption surface and the c-plane of the sapphire is 45° or more.

An electrostatic chuck includes a dielectric substrate, an RF electrode provided inside the dielectric substrate, and a base plate made of metal and joined to the dielectric substrate. The dielectric substrate includes a protrusion section protruding outward beyond a surface of the base plate in top view, and a part of the RF electrode is provided in the protrusion section.

Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.

To provide an electrostatic chuck capable of suppressing variation in in-plane temperature distribution of a substrate during processing.SOLUTION: An electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200 that supports the dielectric substrate 100. The base plate 200 is formed with a coolant flow path 260 through which a coolant passes, and a through hole 230. In top view, the coolant flow path 260 includes a branching portion 263 where the flow path branches into a first flow path 261 and a second flow path 262, and a merging portion 264 where the first flow path 261 and the second flow path 262 merge again. The through hole 230 is formed so as to penetrate a portion of the base plate 200 located between the first flow path 261 and the second flow path 262.SELECTED DRAWING: Figure 3