Substrate support with a protective layer for plasma resistance

Abstract

Embodiments of the present invention provide a substrate support assembly having a protective layer with enhanced plasma corrosion resistance. In one embodiment, a substrate support assembly includes an electrostatic chuck having an upper substrate support surface, and a protective layer disposed on the electrostatic chuck, wherein the protective layer is made of a ceramic material including a rare earth metal.

Description

technical field [0001] Embodiments of the present invention generally relate to a semiconductor processing chamber, and more particularly to a substrate holder having a protective layer suitable for use in a semiconductor processing chamber. Background technique [0002] Semiconductor processing involves a number of different chemical and physical processes to produce tiny integrated circuits on a substrate. The layers of material making up the integrated circuit are produced by chemical vapor deposition, physical vapor deposition, epitaxial growth, and the like. Certain material layers are patterned by using photoresist masks and wet or dry etching techniques. The substrate used to form the integrated circuit may be silicon, gallium arsenide, indium phosphide, glass, or other suitable materials. [0003] A typical semiconductor processing chamber includes a chamber defining a process region, a gas distribution assembly adapted to provide gases from a gas source to the pro...

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Problems solved by technology

Additionally, eroded particles from the substrate support assembly may contaminate the substrate held on the substrate support assembly, causing process defects

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