Substrate support with a protective layer for plasma resistance

A protective layer and substrate technology, applied in the direction of ion implantation plating, application of electrostatic attraction holding device, coating, etc., can solve the problems of contaminated substrate, process defects, etc.

Active Publication Date: 2008-02-06
APPLIED MATERIALS INC
View PDF0 Cites 56 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additionally, eroded particles from the substrate support assembly may contaminate the substrate held on the substrate support assembly, causing process defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate support with a protective layer for plasma resistance
  • Substrate support with a protective layer for plasma resistance
  • Substrate support with a protective layer for plasma resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Embodiments of the present invention provide a substrate support assembly having a protective layer for enhanced plasma corrosion resistance. In one embodiment, the protective layer may be a ceramic layer including a rare earth metal. Examples of protective layers may include yttrium (Y), yttrium oxide (Y 2 o 3 ), yttrium alloys or their derivatives. The protective coating provides a corrosion-resistant surface on the substrate support assembly, thereby increasing the service life of the substrate support assembly while reducing maintenance and manufacturing costs.

[0016] FIG. 1 shows a cross-sectional view of one embodiment of a semiconductor processing chamber having a substrate support assembly 148 disposed therein and having a protective layer 136 . While one embodiment of a substrate support assembly 148 is provided here, it is contemplated that other substrate support assemblies may be adapted to benefit from the present invention.

[0017] The processing ch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
densityaaaaaaaaaa
hardnessaaaaaaaaaa
Login to view more

Abstract

Embodiments of the present invention provide a substrate support assembly having a protective layer with enhanced plasma corrosion resistance. In one embodiment, a substrate support assembly includes an electrostatic chuck having an upper substrate support surface, and a protective layer disposed on the electrostatic chuck, wherein the protective layer is made of a ceramic material including a rare earth metal.

Description

technical field [0001] Embodiments of the present invention generally relate to a semiconductor processing chamber, and more particularly to a substrate holder having a protective layer suitable for use in a semiconductor processing chamber. Background technique [0002] Semiconductor processing involves a number of different chemical and physical processes to produce tiny integrated circuits on a substrate. The layers of material making up the integrated circuit are produced by chemical vapor deposition, physical vapor deposition, epitaxial growth, and the like. Certain material layers are patterned by using photoresist masks and wet or dry etching techniques. The substrate used to form the integrated circuit may be silicon, gallium arsenide, indium phosphide, glass, or other suitable materials. [0003] A typical semiconductor processing chamber includes a chamber defining a process region, a gas distribution assembly adapted to provide gases from a gas source to the pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683C23C16/458C23C14/50C30B25/12
CPCH02N13/00H01L21/68757H01L21/6833H01L21/67109
Inventor 珍妮弗·Y·孙周爱琳
Owner APPLIED MATERIALS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap