Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS

Abstract

The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising:a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.

Description

RELATED APPLICATION[0001]This application is a continuation application of U.S. Ser. No. 11 / 118,521, filed Apr. 29, 2005.FIELD OF THE INVENTION[0002]The present invention generally relates to a semiconductor structure, and more particularly to a material stack useful in metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) that includes a rare earth metal (or rare earth-like)-containing layer present on top of, or within, a dielectric layer which is capable of stabilizing the threshold voltage and flatband voltage of a Si-containing conductor. Specifically, the presence of the rare earth metal (or rare earth-like)-containing layer induces a band bending in a semiconductor substrate so as to shift the threshold voltage to more negative values than when such a layer is not used.BACKGROUND OF THE INVENTION[0003]In standard silicon complementary metal oxide semiconductor (CMOS) technology, n-type field effect transistors (pFET) u...

AI Technical Summary

Benefits of technology

[0021]If a small quantity of rare earth metal is present, the rare earth metal ion substituting for Hf ion acts as a negatively charged defect (REHf<sup2>-< / sup2>). Due to needs for charge neutrality, the presence of the rare earth metal substitutional defect can raise the concentration of the charged oxygen vacancies, thereby promoting the necessary flatband voltage shift. Thirdly, via its strong electropositive nature, the rare earth metal atom will modify the interface chemistry at the semiconductor / chemox / Hf-based dielectric interfacial region and the top Hf-based dielectric / rare earth metal-containing / electrically conductive capping layer region altering the effective alignment of the workfunctions of the material stack. In essence, all three of the aforementioned phenomena are the consequence of insertion of a highly electropositive element as a distinct layer in the stack sequence. This distinct layer then can interdiffuse, but the presence of a composition profile for this electropositive element ensures the flatband / threshold voltage.

Problems solved by technology

It is emphasized that prior art Si MOSFETs fabricated with hafnium oxide as the gate dielectric suffers from a non-ideal threshold voltage when n-MOSFETs are fabricated.

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