Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS

a technology of silicon transistors and threshold voltages, which is applied in the field of semiconductor structure, can solve problems such as non-ideal thresholds, and achieve the effect of promoting the necessary flatband voltage shift and altering the effective alignment of the workfunction of the material stack
US20080258198A1Inactive Publication Date: 2008-10-23AURIGA INNOVATIONS INC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
AURIGA INNOVATIONS INC
Publication Date
2008-10-23
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising:a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.
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Description

RELATED APPLICATION

[0001] This application is a continuation application of U.S. Ser. No. 11 / 118,521, filed Apr. 29, 2005.FIELD OF THE INVENTION

[0002] The present invention generally relates to a semiconductor structure, and more particularly to a material stack useful in metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) that includes a rare earth metal (or rare earth-like)-containing layer present on top of, or within, a dielectric layer which is capable of stabilizing the threshold voltage and flatband voltage of a Si-containing conductor. Specifically, the presence of the rare earth metal (or rare earth-like)-containing layer induces a band bending in a semiconductor substrate so as to shift the threshold voltage to more negative values than when such a layer is not used.BACKGROUND OF THE INVENTION

[0003] In standard silicon complementary metal oxide semiconductor (CMOS) technology, n-type field effect transistors (pFET) u...

Claims

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