633 results about "Metal deposition" patented technology

The invention discloses a composite three-dimensional current collector prepared based on chemical plating, a metal negative electrode and a metal secondary battery, and belongs to the technical field of metal secondary batteries. The composite three-dimensional current collector comprises a nonmetal three-dimensional skeleton matrix and a metal coating which is uniformly distributed on the surface of the matrix through chemical plating. When the metal battery works, Mg, Li, Na, Ca, Zn and other metals are induced to be subjected to uniform electro-deposition and stripping on the surface of the composite three-dimensional current collector by virtue of affinity among metals, and the three-dimensional porous structure of the matrix provides a buffer space for metal deposition, so that metal ions are subjected to rapid and uniform electro-deposition; the stability of an electrode interface can be enhanced, dendritic crystal growth is reduced, the electrodeposition overpotential of metal is reduced, and the service life of a metal negative electrode is prolonged. The composite three-dimensional current collector prepared on the basis of chemical plating solves the problem of non-uniform growth of a metal negative electrode, and is an effective way for commercialized production of a metal secondary battery.

Provided herein are methods of filling features with metal including inhibition of metal nucleation. One aspect of the disclosure relates to a method including providing a substrate having a feature and field regions, wherein the feature is to be filled with metal, the feature including feature surfaces and a feature opening; performing an inhibition treatment to inhibit metal deposition on at least some of the feature surfaces; after performing the inhibition treatment, performing a first chemical vapor deposition (CVD) operation including exposing the feature to a metal precursor and hydrogen (H2); after performing the first CVD operation, performing a de-inhibition treatment to decrease inhibition; and after decreasing inhibition, performing a second CVD operation to deposit metal in the feature and / or on the field regions.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a semiconductor device with an integrated heat dissipation function for a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The single MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode, the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer, the profile of the cross section of the grid electrode is in an H shape, and the grid electrode comprises two longitudinal parts and a transverse part used for bridging the two longitudinal parts. According to the invention, the H-shaped gate structure is in bridge connection with the double longitudinal grooves through the transverse part, so that the channel width is increased, and the on-resistance is reduced; a current path is further optimized by combining a metal deposition layer and a heavily doped N + layer in the bottom doping layer; and the metal layer is connected in parallel to conduct electricity, so that the resistance is reduced, and the heavily doped N + layer inhibits the JFET effect, so that the resistance is reduced by more than 10%.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

The invention relates to a modified current collector for a cathode-free metal battery and a preparation method and application thereof.The preparation method comprises the steps that an in-situ modification reaction is conducted on the surface of a copper current collector to obtain a current collector coated with a copper oxide nanometer material, and then selenium is introduced to the surface of the current collector coated with the copper oxide nanometer material through a partial in-situ substitution reaction to obtain the modified current collector coated with the copper oxide nanometer material. The preparation method comprises the following steps: preparing a copper selenide and copper oxide composite modified current collector, performing in-situ lithiation reaction through electrochemical deposition, and partially converting to generate corresponding lithiates, thereby obtaining the modified current collector for the non-anode metal battery. According to the invention, the functional artificial interface layer with lithium affinity, high stability and high ionic conductivity is constructed on the surface of the copper-based current collector in situ, so that the key problems of uneven metal deposition and unstable SEI layer on the surface of the negative electrode current collector in the current research of the metal secondary battery without the negative electrode are solved, the formation of dendritic crystals and the occurrence of side reactions are inhibited, and the service life of the metal secondary battery is prolonged. Therefore, the coulombic efficiency, the safety and the cycle life of the battery are improved.

An embodiment method includes depositing, in a processing chamber of a high-power impulse magnetron sputtering system, a metal containing layer over a substrate. The depositing includes applying a cyclic plurality of pulses. Each cycle includes applying a primary negative pulse on a target electrode to dislodge target atoms from the target electrode and a secondary positive pulse to accelerate the dislodged target atoms towards the substrate. The secondary positive pulse in one of the cycles is different from the secondary positive pulse in another one of the cycles.

The invention relates to the technical field of MOS (metal oxide semiconductor), and discloses a high-density SiC MOSFET (metal oxide semiconductor field effect transistor) structure and a preparation process thereof, the high-density SiC MOSFET structure comprises a plurality of parallel MOS cells, each MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a grid electrode and a source electrode, each semiconductor epitaxial layer comprises an N substrate layer, an N diffusion layer, a P well layer, an N well layer and a P-layer, the profile of the cross section of the grid electrode is T-shaped, and the width of the cross section of the P well layer and the width of the cross section of the N well layer do not exceed the width of the cross section of the grid electrode. The polycrystalline silicon is introduced to be in direct contact with the source electrode, so that the electric field effect of the drain electrode and the source electrode can be amplified, charges of the drain electrode mainly flow into the N diffusion layer from the metal deposition layer, and under the simultaneous action of a grid electrode electric field and an original electrode electric field, the charges mainly flow towards a charge channel and a charge channel in a concentrated manner; thus, diffusion of charges to adjacent MOS cells can be reduced.

The invention provides a battery charging rate determination method and device, electronic equipment and a storage medium. The method comprises the following steps: obtaining a self-discharge current of a battery in each cycle charging process; the self-discharging current is the self-discharging current collected in the constant-voltage charging process when the battery is charged at a first charging rate in each circulating charging process until the electric quantity parameter of the battery reaches a preset electric quantity parameter and the battery is continuously charged in a constant-voltage charging mode; the values of the first charging multiplying power of the battery are different in different cyclic charging processes; and determining the corresponding maximum charging rate of the battery under the preset electric quantity parameter based on the self-discharging current. According to the embodiment of the invention, the maximum charging rate of the battery is determined based on the self-discharging current, and the battery is guided to be charged through the maximum charging rate, so that metal deposition in the battery can be reduced, and the risk of side reaction can be reduced while the charging efficiency of the battery is improved.

The invention discloses a conductive yarn and a preparation method thereof, relates to the technical field of functional textile materials and composite conductive fiber preparation, and can solve the problems that an existing conductive yarn is poor in flexibility, insufficient in durability, prone to oxidation failure and difficult to integrate multiple functional performances. The preparation method comprises the following steps that S1, PBO yarn is soaked in a dopamine solution, a PDA modification layer is formed on the surface of the PBO yarn through a polydopamine self-polymerization reaction, and the PDA modification layer provides a chelation site and a bonding interface for metal deposition; s2, the PDA modified PBO yarn obtained in the step S1 is subjected to chemical silver plating, silver is deposited on a PDA modified layer to form a continuous conductive layer, and conductive PBO core yarn is prepared; s3, carrying out melt blending and granulation on the low-dielectric-constant flame-retardant filler and thermoplastic polymer resin to prepare flame-retardant composite particles; and S4, spinning by taking the conductive PBO core yarn prepared in the step S2 as a core layer and a melt formed by melting the flame-retardant composite particles prepared in the step S3 as a skin layer to prepare the conductive yarn.

The invention discloses a BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor Transistor) integration method based on a standard bipolar device. The method comprises the following steps of: 1) forming A buried layer regions and a plurality of isolation regions on a substrate; and 2) forming a field region. And 3) forming a first base region and a second base region. And 4) etching the first gate oxide layer by using the mask pattern, and oxidizing and growing a second gate oxide layer and a third gate oxide layer again to form thick and thin gate oxides. And 5) forming gate oxide polycrystal of the MOS tube. And 6) forming a first emitter region, a first base electrode heavy contact region, a first CMOS source-drain region and a second DMOS source-drain region. And 7) forming a second emitter region, a second base electrode heavy contact, a second CMOS source-drain region and a third DMOS source-drain region. And 8) forming a first dielectric layer. And 9) etching the CT hole by using the mask. And carrying out metal deposition, and etching a metal end by using the mask pattern to form BJT, CMOS and DMOS devices. Under the condition that a photoetching layer is not added, the complementary bipolar process is realized, the selectable types of devices are enriched, and the application technical field with wider and higher requirements is met.

The invention discloses a working condition monitoring method for a sodium ion battery sodium precipitation behavior based on battery impedance analysis. The core principle of the method is based on the following points: when sodium precipitation occurs, sodium metal is deposited on the surface of hard carbon, so that the physical and chemical properties of the surface of the hard carbon can be changed; the conductivity of sodium metal is obviously different from that of a hard carbon material, so that the charge transfer resistance of hard carbon is obviously changed. In addition, the appearance of the sodium metal also causes the change of the electric double layer capacitance on the hard carbon surface; therefore, whether sodium metal begins to be separated out or not can be accurately judged by detecting the change of the charge transfer resistance and the electric double-layer capacitance on the hard carbon surface; according to the scheme, in-situ monitoring of sodium metal precipitation can be achieved under the condition that the battery structure is not damaged, the sodium metal precipitation situation of the sodium ion battery in the half-battery discharging process can be sensitively captured, and sodium metal deposition of the half battery, the full battery and the soft package battery under the actual operation condition can be monitored in real time.

The invention relates to the technical field of new energy, in particular to a three-dimensional lithium battery electrothermal coupling computer aging analysis method and system. Compared with a lithium ion battery P2D model which is widely used at present, the lithium ion battery P2D model has the advantages that the fitting result of the model on experimental data in the aspects of discharge voltage and surface temperature is obviously better, and battery aging data can be reproduced. And coupling the three-dimensional electrochemical model with the two-dimensional thermal model. According to the model, an SEI film formed on the surface of the graphite particles and aging behaviors caused by metal lithium plating are considered, so that the model precision is higher. The influence of SEI film and metal Li deposition on the model is considered. By establishing a more comprehensive and accurate three-dimensional coupling model and considering a key aging mechanism, accurate prediction of the performance and the service life of the lithium battery is realized. The prediction capability is of great significance to optimization of battery design, improvement of a thermal management strategy and prolonging of the service life of the battery. Compared with a traditional method, the prediction result of the method is closer to the actual situation, and more reliable theoretical guidance is provided for research, development and application of the battery.

The invention belongs to the field of design and manufacturing of semiconductors / integrated circuits, and particularly relates to a manufacturing method of a silicon capacitor. Comprising the following steps: forming an oxide layer on a silicon substrate, photoetching and etching to form a 1 # capacitor groove, generating a field oxide layer in the groove, filling doped polycrystalline silicon, processing the surface, etching a 2 # capacitor groove, depositing a multilayer film in the groove, processing the multilayer film at two ends of the groove, depositing silicon oxide, finally connecting an upper polar plate and a lower polar plate through photoetching and metal deposition, removing redundant substances and detecting. According to the method, the structure size and performance can be accurately controlled, the electrical performance, reliability and stability of the silicon capacitor in the field of integrated circuits and the like are improved, and the circuit integration degree is improved.

The present application belongs to the technical field of batteries, and specifically relates to an electrolyte, a secondary battery, and an electrical apparatus. The electrolyte provided in the present application comprises a sodium salt and a lithium salt, a deposition overpotential of lithium metal in the electrolyte is higher than that a sodium metal deposition overpotential, and the electrolyte has film-forming selectivity, improving cycle performance of the secondary battery. The secondary battery provided in the present application comprises said electrolyte, and also comprises a positive electrode plate, an active material in the positive electrode plate comprising a sodium ion positive electrode active material and a lithium ion positive electrode active material. The charging platform voltage of the sodium ion positive electrode active material in the battery is lower than the charging platform voltage of the lithium ion positive electrode active material in the battery. The electrolyte in the secondary battery is compatible with the positive electrode plate, and the storage performance of the secondary battery is further improved.

The invention discloses a bipolar plate with a composite carbon coating, a preparation method, an electrode and a battery, the bipolar plate comprises a substrate layer, a transition layer and a composite functional layer, the substrate layer is a metal layer formed by depositing metal Me on the surface of a substrate; the transition layer is formed on the substrate layer and is a metal Me / C layer; the composite functional layer is formed on the transition layer and is far away from the transition layer and comprises a first GLC layer with internal stress relieving and electron conduction functions, a tetrahedral amorphous carbon ta-C layer with a corrosion ion blocking function and a conductive and hydrophobic second GLC layer which are sequentially arranged. The coating provided by the invention has relatively low contact resistance, good ion corrosion resistance and hydrophobic property, and meets the requirement of long-term service of a fuel cell under a durable working condition.

The invention belongs to the technical field of electroplating, and particularly discloses a real-time supplementing method for plating solution metal cations during electroplating. Aiming at the problems of large concentration fluctuation of metal cations and low supplementing efficiency in the traditional electroplating process, the method realizes dynamic balance of the metal cations through an electroplating synchronous electrolysis and anion exchange membrane technology. According to the technical key points, an electroplating liquid chamber and an electrolyte chamber are separated by adopting an anion exchange membrane; ions are supplemented by electrolyzing a soluble single-metal anode corresponding to metal to be plated, and meanwhile, an electrolytic cathode is arranged in an electrolyte chamber, so that metal deposition is avoided; the ion-selective electrode is used for monitoring the concentration of metal cations in real time, and the electrolytic current is automatically adjusted when the concentration deviation exceeds + / -5%. According to the method, ions are directionally supplemented through electrolysis, plating solution pollution and component fluctuation are avoided, and the uniformity and the qualification rate of a plating layer are improved. And the method is suitable for single-metal and multi-element alloy electroplating systems, can be integrated in processes such as jet electrodeposition and bath plating, is high in adaptability, and has industrial application potential.

The invention relates to the technical field of battery manufacturing, and discloses a negative-electrode-free sodium metal battery cell as well as a primary product and a preparation method thereof. The negative-electrode-free sodium metal battery cell primary product comprises a positive electrode, a diaphragm, a negative electrode current collector and an electrolyte, and the electrolyte comprises sodium salt and an additive; the additive comprises a polymer monomer thermal decomposition type initiator; and the thermal decomposition type initiator can initiate the polymerization reaction of the polymer monomer at the polymerization temperature. The preparation method comprises the following steps: charging a negative-electrode-free sodium metal battery cell primary product to a full-charge state with low current, and depositing sodium metal on a negative electrode current collector to form a sodium metal deposition layer, so as to obtain an intermediate product battery; and placing the intermediate battery in an environment of 50-80 DEG C to polymerize the polymer monomer in the electrolyte, and forming a polymer frame layer on the metal deposition layer to obtain a finished product of the negative-electrode-free sodium metal battery cell. The formation of the polymer frame layer can buffer the volume change of the battery and improve the performance of the battery.

An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.

The invention provides a low-specific-on-resistivity GaN HEMT device and a preparation method thereof. The preparation method comprises the following steps: obtaining a thick-barrier GaN epitaxial structure; manufacturing a low-loss etched hard mask medium on a thick-barrier GaN epitaxial structure of the GaN HEMT device with low specific on-resistivity to form a passivation medium film; defining a gate region of the medium by utilizing a photoetching process, and defining a hard mask medium pattern by adopting a medium etching process; carrying out barrier layer groove etching by adopting a GaN low-loss etching process; etching is accurately stopped; adopting a molecular beam epitaxy process to perform secondary epitaxy on a p-GaN layer in a selected area so as to realize complete depletion of two-dimensional electron gas in a grid area; removing the polycrystalline GaN on the hard mask medium; and after horizontal GaN HEMT tape-out, metal deposition of a source electrode, a drain electrode and a grid electrode of the GaN HEMT is carried out. According to the method, a thick barrier layer structure is adopted, the specific on-resistivity limitation of the device is reduced, the device has low specific on-resistivity, the reliability of the grid electrode is improved, and the stability of the device is improved.

The invention provides a heterocyclic derivative and an organic electroluminescent device thereof, and belongs to the technical field of organic electroluminescence. The heterocyclic derivative provided by the invention has relatively weak metal adsorption capacity, when the heterocyclic derivative is used as a nucleation inhibition layer material to be applied to the organic electroluminescent device, deposition of metal on the surface of a thin layer can be effectively inhibited, and meanwhile, the heterocyclic derivative is used as a covering layer material to improve the optical coupling efficiency of the organic electroluminescent device, so that the organic electroluminescent device can be applied to the field of organic electroluminescent devices. And the luminous efficiency of the device is effectively improved. The heterocyclic derivative and the organic electroluminescent device thereof have good application effect and industrialization prospect.

Apparatuses and methods for depositing platinum-group metals (PGM) on substrates in a production line. The apparatus may include: at least one movement mechanism configured to move a plurality of substrates through a deposition region of the production line; at least one alignment mechanism configured to align a plurality of deposition units with a portion of the plurality of substrates in the deposition region; and at least one control unit configured to control a flow rate of the PGM through at least one supply line to the aligned plurality of deposition units to deposit the PGM on deposition surfaces of the aligned portion of the plurality of substrates.

The invention discloses a rare earth metal electrolysis system and an electrolysis furnace thereof, and relates to the technical field of metallurgy, the rare earth metal electrolysis system is characterized by comprising a potential data acquisition and preprocessing module, a dendritic crystal feature extraction and quantification module, a dendritic crystal identification and intelligent determination module and an inverse pulse control and dynamic regulation module, in the electrolysis process, potential distribution original data of the surface of a rare earth metal cathode are detected and collected in real time, the obtained original data are preprocessed, and a preprocessed potential data set is established based on a time sequence. According to the method, intelligent, real-time and accurate inhibition of dendritic crystals in the rare earth metal electrolysis process is achieved, short circuit, splashing and electrode ablation are effectively prevented, the compactness and purity of metal deposition are improved, the current efficiency is remarkably improved, and compared with a traditional scheme, the method has the advantages of being high in real-time performance, good in inhibition effect, small in interference and high in adaptability, and the method is suitable for popularization and application. And efficient and safe preparation of the rare earth metal is ensured.

The invention relates to the technical field of sewage treatment, and discloses a combined treatment method of acid wastewater. The combined treatment method of the acid wastewater comprises the following steps: introducing the acid wastewater generated in an industrial process into an electrochemical device, loading a nonmetallic mineral material on an anode of the electrochemical device, and neutralizing the acid wastewater and extracting heavy metals through electrochemical treatment; the solution subjected to electrochemical treatment enters a sedimentation tank, carbon dioxide in the air is captured and fixed, and then the treated solution meeting the environmental quality standard for surface water is directly discharged. The acid wastewater treatment method is simple, efficient and easy to operate, meanwhile, heavy metal recovery is achieved, non-metallic minerals which are easy to obtain and environmentally friendly are introduced into the anode of the electrochemical device, hydrogen ions released in the electrolysis process are consumed, inhibition of the hydrogen ions on heavy metal deposition is reduced, and the extraction rate of the heavy metal in the wastewater is increased. And the solution subjected to electrochemical treatment is used for capturing and fixing the carbon dioxide, so that the treatment liquid is directly discharged.

The invention provides a modified negative electrode current collector for a sodium metal battery and a preparation method of the modified negative electrode current collector, and belongs to the technical field of secondary batteries. The modified negative electrode current collector comprises a metal substrate and an electron-ion composite conductor coating, the electron-ion composite conductor coating is located on the surface of the metal substrate, and the electron-ion composite conductor coating is obtained by compounding any one of a zeolite molecular sieve and an expansive soil material with a graphitized carbon material. The method disclosed by the invention is simple and feasible, the obtained modified negative electrode current collector can be widely applied to a high-energy-density negative-electrode-free sodium metal battery system, and due to the fact that sodium metal deposition is more uniform and stable, compared with a negative electrode current collector modified only by a graphitized carbon material, the modified negative electrode current collector has better cycling stability.

The invention provides a control method and system for metal deposition in light-transmitting PVD coating, and relates to the technical field of strategy optimizing.The control method comprises the steps that plastic part feature information and a target metal deposition effect of a plastic part sample are obtained, and the plastic part sample is a plastic part subjected to light-transmitting PVD coating; acquiring light-transmitting PVD coating process information, wherein the light-transmitting PVD coating process information comprises an initial light-transmitting PVD coating control scheme corresponding to the plastic part feature information; carrying out metal deposition characteristic detection to obtain a detected metal deposition effect; judging whether a target metal deposition effect is met or not; and if not, performing optimization adjustment on the initial light-transmitting PVD coating control scheme to obtain an optimized light-transmitting PVD coating control scheme. The method solves the technical problems that in the prior art, control over the light-transmitting PVD coating process often depends on experience and rules for parameter adjustment, the requirements of different plastic parts for coating process parameters are ignored, the film layer quality cannot stably reach the target effect, and then the product quality is affected.

A metal hybrid manufacturing apparatus includes a melted metal drop ejecting device and a metal deposition device. The melted metal drop ejecting device is operated to form perimeters of layers in a metal object being formed by the system. The metal deposition device is operated to fill interior portions of the layers.

The present invention belongs to the field of the design and preparation of electromagnetic shielding materials. Disclosed are a modularized full-spectrum efficient electromagnetic shielding flexible fabric and a preparation method therefor. The preparation method of the present invention comprises the following steps: (1) subjecting a fabric to a metal deposition treatment by using a magnetron sputtering system, so as to obtain a flexible conductive fabric A; (2) subjecting the surface of a polymer thin film to a metal deposition treatment by using a vacuum coating technology, so as to obtain a high-toughness conductive thin film B; (3) uniformly mixing a carbon-based wave-absorbing material, a polymer and a solvent, and curing the mixture, so as to obtain a wave-absorbing layer C having a certain thickness; and (4) subjecting the functional modules obtained in step (1), step (2) and step (3) to specific permutation, combination and packaging, so as to obtain a modularized full-spectrum electromagnetic shielding flexible composite fabric.

The invention discloses a Josephson junction, a superconducting quantum chip preparation method and a related product. The preparation method of the Josephson junction comprises the following steps: spin-coating a first layer of photoresist on a substrate and baking; spin-coating a second layer of photoresist again and baking; exposing the first layer of photoresist and the second layer of photoresist, developing after exposure, and forming patterns with crossed gaps in the first layer of photoresist and the second layer of photoresist; cleaning the photoresist left in the cross-shaped gap of the developed substrate by using plasma; then the substrate is put into a TMAH solution to be soaked so as to remove the photoresist left in the cross-shaped gap; mutually crossed metal deposition layers are evaporated in the crossed gaps; and stripping the residual first layer of photoresist and the second layer of photoresist to obtain the Josephson junction. According to the method, under the condition that the size of the side wall of the photoresist of the barrier layer is not influenced basically, the residual photoresist in the cross-shaped gap can be well removed, and the preparation quality of the Josephson junction and the performance of the superconducting quantum chip are improved.

The embodiment of the invention relates to a processing method for laser metal deposition manufacturing technological parameters. The processing method comprises the steps that multiple pieces of technological parameter information in a laser metal deposition manufacturing multi-technological-parameter deposition experiment are obtained; determining the influence of each piece of process parameter information on the forming quality; according to the influence, determining the influence range of each piece of process parameter information, and taking the influence range as a constraint condition; according to a second algorithm and the objective function, the number of each quality grade in each technological parameter combination is determined; constructing an objective function of process parameter optimization; according to a preset data driving prediction model and a target function, predicting the number of quality grades; calculating the fitness of the initial population; performing non-dominated sorting on the initial population to form a Pareto frontier; according to the fitness, generating a next generation of population through genetic manipulation, and repeatedly iterating until a target population is determined to form a Pareto frontier set; and determining a target process parameter combination according to the Pareto frontier set and the new search strategy.

The present application provides a negative electrode plate, an electrochemical device and an electronic device of a sodium ion battery, wherein the negative electrode plate includes a negative electrode current collector, a carbon material coating formed on at least a portion of the surface of the negative electrode current collector, and a sodium metal layer formed on at least a portion of the surface of the carbon material coating away from the negative electrode current collector, the thickness of the carbon material coating is less than or equal to 10 μm, the carbon material coating includes a carbon material and a polymer binder, the carbon material includes an oxygen-containing group, and the mass content of oxygen atoms in the carbon material is ≥ 0.1%. The negative electrode plate of the sodium ion battery provided by the present application deposits metallic sodium on the surface of the negative electrode current collector during the first charge, and the metallic sodium formed by the deposition can adhere to the carbon material coating on the surface of the negative electrode current collector, and the carbon material coating can effectively reduce the overpotential of sodium metal deposition, inhibit the formation of sodium dendrites, and is conducive to improving the cycle performance of the battery.