1514 results about "Metal deposition" patented technology

A microfluidic device having integrated components for conducting chemical operations. Depending upon the desired application, the components include electrodes for manipulating charged entities, heaters, electrochemical detectors, sensors for temperature, pH, fluid flow, and other useful components. The device may be fabricated from a plastic substrate such as, for example, a substantially saturated norbornene based polymer. The components are integrated into the device by adhering an electrically conductive film to the substrate. The film may be made of metal or an electrically conducting ink and is applied to the device through metal deposition, printing, or other methods for applying films. Methods for reducing bubble formation during electrokinetic separation and methods for heating material in a microfluidic device are also disclosed.

An electrolytic cell and method of electrolysis for producing hydrogen peroxide at a moderate current density while preventing metal deposition on the cathode surface. A feed water from which multivalent metal ions have been removed and in which a salt of a univalent metal, e.g., sodium sulfate, has been dissolved in a given concentration is prepared with an apparatus for removing multivalent metal ions and dissolving a salt in low concentration. The feed water is supplied to an electrolytic cell. Even when electrolysis is continued, almost no deposition of a hydroxide or carbonate occurs on the cathode because multivalent metal ions are not present in the electrolytic solution. Due to the dissolved salt, a sufficient current density is secured to prevent an excessive load from being imposed on the electrodes, etc. Thus, stable production of hydrogen peroxide is possible over a long period of time.

To provide a very-low-cost and short-TAT connection structure superior in connection reliability in accordance with a method for three-dimensionally connecting a plurality of semiconductor chips at a shortest wiring length by using a through-hole electrode in order to realize a compact, high-density, and high-function semiconductor system. The back of a semiconductor chip is decreased in thickness up to a predetermined thickness through back-grinding, a hole reaching a surface-layer electrode is formed at a back position corresponding to a device-side external electrode portion through dry etching, a metallic deposit is applied to the sidewall of the hole and the circumference of the back of the hole, a metallic bump (protruded electrode) of another semiconductor chip laminated on the upper side is deformation-injected into the through-hole by compression bonding, and the metallic bump is geometrically caulked and electrically connected to the inside of a through-hole formed in an LSI chip. It is possible to realize a unique connection structure having a high reliability in accordance with the caulking action using the plastic flow of a metallic bump in a very-low-cost short-TAT process and provide a three-dimensional inter-chip connection structure having a high practicability.

The invention includes processes for combined polymer surface treatment and metal deposition. Processes of the invention include forming an aqueous solution containing a metal activator, such as an oxidized species of silver, cobalt, ruthenium, cerium, iron, manganese, nickel, rhodium, or vanadium. The activator can be suitably oxidized to a higher oxidation state electrochemically. Exposing a part to be plated (such as an organic resin, e.g. a printed circuit board substrate) to the solution enables reactive hydroxyl species (e.g. hydroxyl radicals) to be generated and to texture the polymer surface. Such texturing facilitates good plated metal adhesion. As part of this contacting process sufficient time is allowed for both surface texturing to take place and for the oxidized metal activator to adsorb onto said part. The part is then contacted with a reducing agent capable of reducing the metal activator to a lower ionic form, or a lower oxidation state. That reduction can result in the formation of metallic catalytic material over the surface of the part. The reduced metal activator can then function to catalyze the electroless deposition of metal such as copper from solution by contacting the part with the plating solution.

Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

The present invention relates to the application of a force to enhance the performance of an electrochemical cell. The force may comprise, in some instances, an anisotropic force with a component normal to an active surface of the anode of the electrochemical cell. In the embodiments described herein, electrochemical cells (e.g., rechargeable batteries) may undergo a charge / discharge cycle involving deposition of metal (e.g., lithium metal) on a surface of the anode upon charging and reaction of the metal on the anode surface, wherein the metal diffuses from the anode surface, upon discharging. The uniformity with which the metal is deposited on the anode may affect cell performance. For example, when lithium metal is redeposited on an anode, it may, in some cases, deposit unevenly forming a rough surface. The roughened surface may increase the amount of lithium metal available for undesired chemical reactions which may result in decreased cycling lifetime and / or poor cell performance. The application of force to the electrochemical cell has been found, in accordance with the invention, to reduce such behavior and to improve the cycling lifetime and / or performance of the cell.

The invention is directed to enhanced methods for detecting an analyte of interest in situ, by immunoassay, or by hybridization comprising binding an enzyme-labeled conjugate molecule to an analyte of interest in the presence of a redox-inactive reductive species and a soluble metal ion. The enzyme catalyzes the conversion of the inactive reductive species to an active reducing agent, which in turn reduces the metal ion to a metal atom thereby providing an enhanced means of detecting the analyte via metal deposition.

An integrated MEMS device is provided, including, from bottom up, a bonding wafer layer, a bonding layer, an aluminum layer, a CMOS substrate layer defining a large back chamber area (LBCA), a small back chamber area (SBCA) and a sound damping path (SDP), a set of CMOS wells, a field oxide (FOX) layer, a set of CMOS transistor sources / drains, a first polysilicon layer forming CMOS transistor gates, a second polysilicon layer, said CMOS wells, said CMOS transistor sources / drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with a plurality of metal layers interleaved with a plurality of via hole layers, and a gap control layer, an oxide layer, a first Nitride deposition layer, a metal deposition layer, a second Nitride deposition layer, an under bump metal (UBM) layer made of preferably Al / NiV / Cu and a plurality of solder spheres.

A method of improving the breakdown strength of polymer multi-layer (PML) capacitors is provided and of providing a window in food packaging is provided. The method comprises patterning the aluminum coating, either by selective removal of deposited aluminum or by preventing deposition of the aluminum on selected areas of the underlying polymer film. Apparatus is also provided for patterning metal deposition on polymer films comprising masking for defining regions in which metal is deposited. The apparatus comprises: (a) a rotating drum; (b) a monomer evaporator for depositing a monomer film on the rotating drum; (c) a radiation curing element for curing the monomer film to form a cross-linked polymer film; and (d) a resistive evaporator for depositing a metal film on the cross-linked polymer film. The foregoing elements are enclosed in a vacuum chamber. The masking comprising one of the following: (e1) a web mask provided with openings for depositing the metal film therethrough, the web mask including a portion adapted for positioning between the resistive evaporator for depositing the metal film on the cross-linked polymer film and the rotating drum; or (e2) a rotating element for transferring liquid from a source to the rotating drum, the rotating element adapted to transfer the liquid to the rotating drum after the monomer evaporator for depositing the polymer film and before the resistive evaporator for depositing the metal film.

A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.

The invention discloses a transparent conducting electrode using a graphene film as a GaN-based LED (light-emitting diode) or ultraviolet light detector and a manufacture method and applications thereof. The graphene film is solidified and bonded on the surface of the GaN substrate of the LED or ultraviolet light detector. The transparent graphene conducting film is prepared by adopting a chemical vapor deposition or reduction-oxidation method, and the GaN-based LED or ultraviolet light detector is manufactured by utilizing a micromachining photoetching, etching and metal deposition method; the graphene film is moved to the p-type GaN-based substrate of the LED or ultraviolet light detector to serve as the transparent conducting electrode instead of ITO or Ni / Au. In the invention, the graphene film is used as the transparent conducting electrode, which can realize low-cost and high-brightness luminescent devices and expands the applications of carbon nanometer materials in the field of GaN-based photoelectric devices.

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

The present invention provides a surface preparation process using adsorbed halogen. The halogen is applied in a gas phase with UV light. The adsorbed halogen is subsequently modified in another gas phase reaction. The halogen may be reacted with water to form a hydroxyl-bearing Si—O monolayer that forms a layer for subsequent metal deposition. In one aspect the halogen layer is reacted with an alkyl or alkoxy of the formula R-OH to form a passivation layer. By replacing hydrogen atom termination with alkoxy (e.g.methoxy termination, —OCH3). The selective deposition process can be used for passivating and depositing thin metal films on material surfaces composed of any combination of the group consisting of semiconductors, conductors, insulators, and the like.

The present invention relates to methods for producing metal-coated palladium or palladium-alloy particles. The method includes contacting hydrogen-absorbed palladium or palladium-alloy particles with one or more metal salts to produce a sub-monoatomic or monoatomic metal- or metal-alloy coating on the surface of the hydrogen-absorbed palladium or palladium-alloy particles. The invention also relates to methods for producing catalysts and methods for producing electrical energy using the metal-coated palladium or palladium-alloy particles of the present invention.

A method for forming signal conduits before encapsulation for incorporation as through vias in a semiconductor device package is provided. One or more signal conduits are formed through photolithography and metal deposition on a metal film or substrate. After removing photoresistive material, the semiconductor device package is built by encapsulating the signal conduits along with any semiconductor die and other parts of the package. The ends of the signal conduits are exposed and the signal conduits can then be used as through vias, providing signal-bearing pathways between interconnects or contacts on the bottom and top of the package, and electrical contacts of the semiconductor die. Using this method, signal conduits can be provided in a variety of geometric placings in the semiconductor device package. A semiconductor device package including the signal conduits made from the above method is also provided.

This invention relates to a solid divided composition comprising grains whose mean size is greater than 25 μm and less than 2.5 mm, wherein each grain is provided with a solid porous core and a homogeneous continuous metal layer consisting of at least one type of transition non-oxidised metal and extending along a gangue coating the core in such a way that pores are inaccessible. A method for the production of said composition and for the use thereof in the form of a solid catalyst is also disclosed.

A method for depositing superalloy materials. A layer of powder (14) disposed over a superalloy substrate (12) is heated with an energy beam (16) to form a layer of superalloy cladding (10) and a layer of slag (18). The layer of powder includes flux material and alloy material, formed either as separate powders or as a hybrid particle powder. A layer of powdered flux material (22) may be placed over a layer of powdered metal (20), or the flux and metal powders may be mixed together (36). An extrudable filler material (44) such as nickel, nickel-chromium or nickel-chromium-cobalt wire or strip may be added to the melt pool to combine with the melted powder to give the superalloy cladding the composition of a desired superalloy material.

Multiple criteria are monitored and controlled to enhance the success of direct-metal deposition, including greater control over factors such as deposit layer height / thickness, sub-harmonic vibration, contour path shape, powder mass flow, and deposition speed, and stress accumulation. Sensors are used to monitor some or all of the following parameters during the deposition process: deposit height, width, temperature, and residual stress. A predetermined limit with respect to the yield strength of the material is preferably set. If the stress exceeds that limit sensors will automatically introduce one or more remedial measures, the priority of which is established using a look-up table generated in accordance with prior experimental knowledge. To control temperature induced distortion and stress, an infrared temperature detector may be used in conjunction with a controller to reduce temperature, increase speed and decreased power for purpose of stress management.

Method for removing and / or redistributing material in the trenches and / or vias of integrated circuit interconnect structures by a gas cluster ion beam (GCIB) is described to improve the fabrication process and quality of metal interconnects in an integrated circuit. The process entails opening up an undesired ‘necked in’ region at the entrance to the structure, re-depositing the barrier metal from thicker areas such as the neck or bottom of the structure to the side walls and / or removing some of the excess and undesired material on the bottom of the structure by sputtering. The GCIB process may be applied after the barrier metal deposition and before the copper seed layer / copper electroplating or the process may be applied after the formation of the copper seed layer and before electroplating. The method may extend the usability of the known interconnect deposition technologies to next generation integrated circuits and beyond.

A method is provided for depositing a hard wear resistant surface onto a porous or non-porous base material of a medical implant. The wear resistant surface of the medical implant device may be formed by a Laser Based Metal Deposition (LBMD) method such as Laser Engineered Net Shaping (LENS). The wear resistant surface may include a blend of multiple different biocompatible materials. Further, functionally graded layers of biocompatible materials may be used to form the wear resistant surface. Usage of a porous material for the base may promote bone ingrowth to allow the implant to fuse strongly with the bone of a host patient. The hard wear resistant surface provides device longevity, particularly when applied to bearing surfaces such as artificial joint bearing surfaces or a dental implant bearing surfaces. An antimicrobial material such as silver may be deposited in combination with a metal to form an antimicrobial surface deposit.

A direct-metal deposition (DMD) processing stage and a 5DOF (degree of freedom) dry micro-EDM (mEDM) stage are integrated to provide the submicron scale resolution necessary for the ultra-precision processing of work pieces. The DMD processing stage includes optical feedback for dimensional control utilizing a high-power, fiber-coupled diode laser with fast response time and small beam parameter product. The electrical discharge machining (EDM) stage is a dry EDM stage using an inert gas with appropriate dielectric properties to perform the surface finishing operations. The system further includes one or more surface treatment operations to obtain a desired level of surface hardness or wear resistance and / or to minimize the distortion induced in treating the surface.

Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

A method of separating, concentrating or purifying uniform carbon nanotubes with desired properties (diameter, chiral vector, etc) in a highly sensitive manner by the use of structure-sensitive properties peculiar to carbon nanotubes; and an apparatus therefor. There is provided a method of separating, concentrating, or purifying carbon nanotubes with the desired properties contained in a sample, comprising the steps pf (a) irradiating a sample containing carbon nanotubes with light; and (b) selecting carbon nanotubes with desired properties. In a preferred embodiment, the light irradiation of the step (a) can be carried out in the presence of a metal so as to cause specified carbon nanotubes to selectively induce a photocatalytic reaction, resulting in metal deposition. Further, in a preferred embodiment, a given magnetic filed can be applied in the steps (b) so as to attain accumulation or concentration or carbon nanotubes with metal deposited.

A multilevel interconnect structure is formed which uses air as a dielectric between wiring lines and which is compatible with the presence of unlanded vias in the interconnect structure. A layer of carbon is deposited over an insulating surface and then a pattern for trenches is formed in the surface of the layer of carbon. Metal is deposited in the trenches and over the layer of carbon and then a chemical mechanical polishing process is used to define wiring lines. An ashing or etch back process is performed on the carbon layer to recess its surface below the surfaces of the wiring lines. An oxide capping layer is provided over the recessed surface of the carbon and the wiring lines, for example using HSQ and curing, and then the carbon layer is consumed through the capping layer using an oxidation process. Air replaces the sacrificial carbon layer during the consumption reaction. Next, a silicon nitride etch stop layer is provided over the surface of the capping layer and then an intermetal dielectric layer is provided. A via is formed by etching through the intermetal dielectric, stopping on the etch stop layer, and then etching through the etch stop layer and the capping layer in distinct processes. The via is filled with a metal plug and then second level wiring lines are formed.

A photocatalytic metal deposition process and a resulting nanocomposite are described. The nanocomposite includes an electrically conducting carbonaceous material, a photoactive metal oxide and a metal. Metals for deposition include noble metals, metal alloys and other transition metals in which the metal is laid down precisely and in a predetermined fashion on one or more surfaces of a composite. Deposition provides a high performance electrocatalyst for a number of suitable applications.

Manufacturing tools having a base and a working surface, such as trim steels, flange steels and die inserts, are formed by fabricating or casting a substrate out of a relatively ductile, low wear-resistant metal and forming the working surfaces such as cutting edges, flanging surfaces, die surfaces and die inserts by depositing layers of relatively hard, wear-resistant materials to the substrate by closed-loop direct-metal deposition or laser cladding. A multi-axis numerically controlled robot may be used to position and move a beam and deposition material over large substrates in forming such tooling.

A method of modeling multiple material parts for additive manufacturing processes such direct metal deposition operates within the constraints of a single material CAD system. Each material is modeled separately as a single or multiple solid part, under the assumption that there are no internal multiple materials; that is, no voids for other material parts. The parts are ordered from the outer most geometry to the innermost geometry and Boolean operations are performed to calculate the final volume for each part. In use of the invention, should any design changes occur, only the parts as originally defined need to be modified, and the method is reapplied. The method is applicable to the generation of CAM cutting paths for 2½-D and 3-D geometries by pocket machining with spiral-in, spiral-out, and arbitrary direction raster tool paths using stock material with and without reflection, depending upon the geometry. Single- and multi-material files may be merged one toolpath file, and commands may be embedded for closed- or open-loop control of the fabrication process.