1514 results about "Metal deposition" patented technology

An electrolytic cell and method of electrolysis for producing hydrogen peroxide at a moderate current density while preventing metal deposition on the cathode surface. A feed water from which multivalent metal ions have been removed and in which a salt of a univalent metal, e.g., sodium sulfate, has been dissolved in a given concentration is prepared with an apparatus for removing multivalent metal ions and dissolving a salt in low concentration. The feed water is supplied to an electrolytic cell. Even when electrolysis is continued, almost no deposition of a hydroxide or carbonate occurs on the cathode because multivalent metal ions are not present in the electrolytic solution. Due to the dissolved salt, a sufficient current density is secured to prevent an excessive load from being imposed on the electrodes, etc. Thus, stable production of hydrogen peroxide is possible over a long period of time.

A method of depositing a hard wear resistant surface onto a porous or non-porous base material of a medical implant. The medical implant device formed by a Laser Based Metal Deposition (LBMD) method. The porous material of the base promotes bone ingrowth allowing the implant to fuse strongly with the bone of a host patient. The hard wear resistant surface provides device longevity when applied to bearing surfaces such as artificial joint bearing surface or a dental implant bearing surface.

The present invention relates to methods for producing metal-coated palladium or palladium-alloy particles. The method includes contacting hydrogen-absorbed palladium or palladium-alloy particles with one or more metal salts to produce a sub-monoatomic or monoatomic metal- or metal-alloy coating on the surface of the hydrogen-absorbed palladium or palladium-alloy particles. The invention also relates to methods for producing catalysts and methods for producing electrical energy using the metal-coated palladium or palladium-alloy particles of the present invention.

A multilevel interconnect structure is formed which uses air as a dielectric between wiring lines and which is compatible with the presence of unlanded vias in the interconnect structure. A layer of carbon is deposited over an insulating surface and then a pattern for trenches is formed in the surface of the layer of carbon. Metal is deposited in the trenches and over the layer of carbon and then a chemical mechanical polishing process is used to define wiring lines. An ashing or etch back process is performed on the carbon layer to recess its surface below the surfaces of the wiring lines. An oxide capping layer is provided over the recessed surface of the carbon and the wiring lines, for example using HSQ and curing, and then the carbon layer is consumed through the capping layer using an oxidation process. Air replaces the sacrificial carbon layer during the consumption reaction. Next, a silicon nitride etch stop layer is provided over the surface of the capping layer and then an intermetal dielectric layer is provided. A via is formed by etching through the intermetal dielectric, stopping on the etch stop layer, and then etching through the etch stop layer and the capping layer in distinct processes. The via is filled with a metal plug and then second level wiring lines are formed.