49 results about "Metal deposition" patented technology

A kind of heart sound sensing structure and its preparation method, the structure includes double SOI substrate, center mass, elastic support beam, piezoresistive sensing unit and capacitive sensing unit.The front surface of center mass is provided with additional mass layer, and the back surface is kept bottom layer silicon to increase thickness;Elastic support beam connects mass and frame;Piezoresistive sensing unit is composed of four piezoresistors to form wheatstone bridge, and capacitive sensing unit includes movable and fixed comb-tooth capacitive plate crossing each other.When the sound pressure gradient of heart sound signal drives mass to deviate, elastic support beam bends to change piezoresistive value, and at the same time, comb-tooth capacitive plate overlapping area changes to cause capacitive value change, to realize piezoresistive and capacitive dual-mode synchronous detection.Two kinds of detection mechanisms calibrate each other, which significantly improves the sensitivity and anti-interference ability of low-frequency heart sound signal.The preparation method is based on double SOI substrate, integrated by ion implantation, etching, metal deposition and 3D printing process, suitable for miniaturized wearable heart sound monitoring application.

The invention discloses a method for selectively separating valuable metals from a positive electrode material of a waste lithium battery, and belongs to the technical field of resource recycling of waste lithium ion batteries. The method comprises the following steps: preparing an aprotic deep eutectic solvent (DES) as a leaching agent and an electrolyte at the same time; the method comprises the following steps: adding a waste positive electrode material into DES, and leaching to obtain a DES leaching-electrolyte system; according to the method, the pulse voltage is applied in stages, selective separation of nickel, cobalt and manganese is achieved by controlling the pulse peak voltage (the first stage is-0.8 V to-1.0 V, the second stage is-1.0 V to-1.2 V, and the third stage is-1.2 V to-1.5 V), and the pulse frequency and the duty ratio are used for regulating and enhancing mass transfer and restraining side reactions. According to the method, the metal deposition potential difference is expanded through DES coordination regulation and control, efficient selective separation of nickel, cobalt and manganese is achieved in combination with pulse step-by-step voltage control, and the method has the advantages of being high in separation efficiency, few in side reaction, simplified in process, high in product purity and the like.

This invention discloses a method for removing a double-layer positive photoresist for preparing metal bumps: S1, cleaning the epitaxial wafer; S2, spin-coating a first-type positive photoresist as the bottom layer onto the epitaxial wafer; S3, soft baking to cure the first-type positive photoresist; S4, spin-coating a second-type positive photoresist as the top layer onto the first-type positive photoresist; S5, soft baking to cure the second-type positive photoresist; S6, exposure using a photolithography machine to expose the double-layer photoresist; S7, post-baking; S8, development using an alkaline developer to develop the double-layer photoresist; S9, metal deposition using a metal deposition apparatus; S10, removing the double-layer photoresist using a photoresist stripping solution; S11, preparing metal bumps on the surface of the epitaxial wafer. This invention achieves a lift-off process using a double-layer positive photoresist, solving the problem of difficult preparation of small-sized metal bumps in Micro-LED micro-display devices, and enabling the preparation of metal bumps with small spacing and high thickness.

This invention belongs to the field of new energy batteries and relates to a method for protecting lithium metal anodes. It utilizes a chemical etchant to etch lithium metal or lithium alloys through a mild chemical reaction, generating a highly stable, tightly bonded solid electrolyte interface layer containing borides, fluorides, sulfides, etc., on the surface of the lithium metal or lithium alloy. This effectively suppresses side reactions between the electrode and the electrolyte, reduces interface impedance, and improves interface stability. The chemical etching strategy employed preferentially etches the high-chemical-energy crystal faces of lithium while retaining crystal faces with high electrochemical activity and low chemical energy, thus improving the reaction kinetics of the lithium metal anode. The resulting three-dimensional surface structure effectively buffers volume changes during metal deposition and stripping, avoiding surface fractures, trenches, pulverization, dendrite formation, and other problems that occur during long-term cycling, ensuring the integrity of the anode structure and cycle stability, thereby improving the cycle performance of lithium metal batteries and extending their service life.

The present application relates to a kind of for CO2 hydrogenation methanol hydrophobic core-shell catalyst and its preparation method and application, belong to catalyst preparation technical field.Zirconium-based metal organic framework UiO-66 is core body, outer layer constructs hydrophobic mesoporous silica shell layer to form core-shell structure carrier.The carrier is pre-wetted with solvent before metal introduction, and copper, zinc nitrate precursor is introduced under the condition, and its wetting, penetration and migration process in channel are controlled, so that it can penetrate hydrophobic mesoporous shell layer and transport to core-shell interface and UiO-66 core surface.Subsequently, by adjusting metal deposition kinetics, copper zinc species is selectively deposited and forms active component enrichment at interface.Preferably, by controlling metal loading process, copper zinc active component is enriched and controllably distributed in hydrophobic core-shell structure, so as to improve the stability and catalytic performance of catalyst in CO2 hydrogenation methanol reaction.

This invention provides an electroplating electrode assembly, an electroplating mechanism, and an electroplating machine, relating to the field of metal deposition manufacturing technology. The electroplating electrode assembly includes: a rotating assembly comprising a first rotating mechanism and a second rotating mechanism, the first rotating mechanism and the second rotating mechanism being arranged at intervals and rotating in the same direction; a tension electrode, with its two ends respectively mounted on the first rotating mechanism and the second rotating mechanism, the tension electrode being able to contact the object to be plated during its movement; the rotation direction of the first rotating mechanism and the second rotating mechanism being perpendicular to the movement direction of the object to be plated; the electroplating mechanism including an electroplating solution tank for containing the electroplating solution and the aforementioned electroplating electrode assembly, the electroplating electrode assembly being mounted in the electroplating solution tank, the tension electrode being in contact with the electroplating solution; and the electroplating machine including an electroplating machine tank and the aforementioned electroplating mechanism, the electroplating mechanism being mounted in the electroplating machine tank. The beneficial effect of this invention is that it can both meet the electroplating requirements and replace the daily cleaning process.

The present invention provides a secondary battery and a method for manufacturing a secondary battery that suppresses metal deposition in the curved portion of a wound body. [Solution] The secondary battery comprises a winding body 20 having a flat shape formed by winding a laminate in which a positive electrode sheet and a negative electrode sheet are stacked with a separator in between, and an electrolyte. The Young's modulus of the separator at the end of the curved portion 20A located in the longitudinal axis direction D3 in a cross-section including the winding direction of the winding body 20 is lower than the Young's modulus of the separator at the center of the flat portion 20B located in the longitudinal axis direction D3 in the cross-section.

The present application relates to the technical field of welding, and discloses a FGB single-sided submerged arc welding method, which comprises the following steps: firstly, fixing a first welding part and a second welding part to form a welding groove with a root width of 4-10 mm; then, installing a gasket at the bottom of the welding groove to block; subsequently, laying welding iron powder with a thickness equal to the root width in the welding groove; finally, adjusting a welding trolley to center a cable-type welding wire with one end of the welding groove, starting the trolley to move to the other end while synchronously laying flux, and completing submerged arc welding. Through the synergistic effect of the pre-laid iron powder and the cable-type welding wire, the present application greatly increases the metal deposition rate and effectively buffers the downward impact heat of the electric arc. The method not only completely solves the problem that the gasket is easily burnt through in large-gap and variable-gap welding, but also gets rid of the cumbersome limitation of multi-wire equipment, and can complete efficient and high-fault-tolerant single-sided welding and double-sided forming by using a portable single-head equipment, which is extremely practical on site.

A method for manufacturing a metal alloy part by additive manufacturing, the metal alloy comprising a metal element A and the part further comprising inclusions of a phosphor compound consisting of a metal oxide doped by said metal element A. The method includes forming a layer comprising said metal alloy comprising a metal element A and inclusions of said phosphor compound by an additive manufacturing technique selected from laser metal deposition and laser powder bed fusion, from a mixture comprising a metal alloy powder comprising the metal element A and a precursor powder of said phosphor compound. The precursor powder consists of a powder of the metal oxide optionally doped with a metal element B different from the metal element A, said phosphor compound being formed in situ, during the implementation of the additive manufacturing technique, by atomic diffusion of a portion of the metal element A of the metal alloy to the metal oxide and exchange of the metal element A with a metal element of the metal oxide.

The application provides a modified metal electrode for inducing the growth of a preferential crystal face orientation of electrodepositing metal, a metal battery and a preparation method. The application spreads trifluoromethyltrimethylsilane on a metal surface, forms an artificial solid-state electrolyte interface film with high fluorine content on the metal surface through in-situ reaction of the trifluoromethyltrimethylsilane and the metal, and obtains a trifluoromethyltrimethylsilane modified metal electrode (a battery positive electrode or a battery negative electrode). The modified metal electrode can induce the growth of a preferential crystal face orientation of electrodepositing metal, and finally forms uniform, dendrite-free and flat block-shaped metal deposition.

The application discloses a metal lithium negative electrode and a preparation method for improving lithium metal deposition behavior, and the lithium metal deposition behavior can be improved by adding lithiumophilic sites in the through hole of an organic polymer film and under the film; different polymers are mixed and coated on the surface of the metal lithium negative electrode, one of the polymers is removed, the polymer coating on the surface of the metal lithium is in a through hole porous state, and then a lithiumophilic substance is coated and embedded into the pore channel of the polymer coating, so that the purpose of adding the lithiumophilic sites under the film is achieved. The application has the beneficial effects that: through the preparation method, lithium metal can be induced to uniformly nucleate and grow, the lithium metal deposition direction can be changed, the ionic conductivity of the composite protective film can be improved, the generation of lithium dendrites can be inhibited, and the side reaction caused by the direct contact between the negative electrode and the electrolyte can be reduced.

This invention belongs to the field of chip packaging, specifically relating to a high-reliability wafer-level packaged thin-film bulk acoustic wave device structure and its fabrication method. The structure includes a functional wafer and a capping wafer. The functional wafer has opposing first and second surfaces and a communicating first sidewall surface. The capping wafer has opposing third and fourth surfaces and a communicating second sidewall surface. The capping wafer has metallized vias penetrating the third and fourth surfaces and metal pillars completely filling the metallized vias. The edge of the third surface is bonded to the edge of the second surface via a sealing ring of a certain thickness. A communicating metal deposition layer is provided on the first surface, the first sidewall surface, and part of the second sidewall surface, covering the outer sidewall of the sealing ring. An electroplated thickening layer is provided on the surface of the metal deposition layer. This invention encapsulates the wafer-level packaged thin-film bulk acoustic wave device, blocking gas from entering and exiting from the side, thus improving the hermeticity of the wafer-level package.

Silicon-silicon oxide-lithium niobate high bandwidth electro-optical modulator and integrated method, the wafer is from bottom to top silicon substrate layer, silicon oxide isolation layer, lithium niobate film layer, silicon oxide buffer layer and silicon film layer; The electro-optical modulator comprises a multimode interferometer, a mode spot converter, an electro-optical phase shift arm, a traveling wave electrode and a thermoelectric electrode. The present application forms a conventional silicon waveguide, a thin silicon waveguide and a silicon oxide waveguide by etching multiple times, and forms a traveling wave electrode and a thermoelectric electrode by metal deposition. The silicon oxide layer acts as a buffer layer to alleviate the thermal mismatch and lattice mismatch between the silicon wafer and the lithium niobate wafer, improve the reliability and yield of the electro-optical modulator based on the silicon-silicon oxide-lithium niobate wafer, and provide a new degree of freedom for the design of the electro-optical modulator. The present application is compatible with CMOS process, and takes advantage of silicon, silicon oxide and lithium niobate, which is conducive to improving the compactness and reliability of integration.

This invention discloses a semiconductor structure with a through-silicon via (TSV) interconnect, comprising a pre-deposition dielectric layer on a substrate, a peripheral metal interconnect layer on the pre-deposition dielectric layer, an interlayer dielectric layer on the pre-deposition dielectric layer and the peripheral metal interconnect layer, a rear-end metal interconnect structure on the interlayer dielectric layer, a plurality of vias located in the interlayer dielectric layer and directly connecting the peripheral metal interconnect layer and the rear-end metal interconnect structure, and a TSV interconnect passing through the substrate and the pre-deposition dielectric layer from the back side of the substrate and directly connecting to the peripheral metal interconnect layer, wherein the TSV interconnect overlaps with the vias in the vertical direction.

The application discloses a process method for low-voltage gallium nitride device substrate grounding. Before forming source-drain ohmic contact metal, the method etches through the epitaxial structure and exposes the substrate contact hole of the silicon substrate in the sealing ring area around the chip unit; the ohmic contact metal is formed in the source-drain ohmic area and the substrate contact hole at the same time in the same metal deposition, and the metal in the hole and the silicon substrate form a stable ohmic contact through the same rapid thermal annealing; then, the substrate contact point is connected to the top metal through the dielectric layer contact hole, the interconnection metal and the through-hole interconnection, and is electrically connected with the annular sealing ring metal and the grounding metal structure. The scheme avoids occupying the active area, reduces the substrate contact resistance dispersion and improves the substrate potential uniformity, and reduces the etching depth of the through hole and the photolithography cost.

The present invention relates to a template for metal electrode patterning capable of patterning a metal electrode selectively without a mask, which comprises a first region in which a material that interferes with metal deposition is printed on the surface and a second region forming a location where the metal is to be deposited.

This invention relates to the field of battery technology, and particularly to a secondary battery, its preparation method, and an electrical device thereof. The secondary battery includes a positive electrode, a negative electrode, an electrolyte, and a separator. The negative electrode includes a negative current collector and an A-film layer and a B-film layer disposed on opposite surfaces of the negative current collector. The concentration of active metal elements per unit area of ​​the A-film layer is greater than that of the B-film layer. The ratio of the negative electrode active material capacity per unit area of ​​the A-film layer to that of the B-film layer is 0.5 to 1.13. Meeting these conditions can reduce the problem of metal deposition on the negative electrode side.

The present invention forms a plurality of bumps at a uniform height on a substrate.　A plating device for forming a plating film on a substrate includes: a substrate holder for holding the substrate; a plating tank for storing a plating solution together with the substrate holder; an anode disposed in the plating tank so as to face the substrate held by the substrate holder; a power supply for supplying a plating current between the substrate and the anode; and a control unit. The control unit causes the power supply to output a plating current that repeats a forward current period in which a forward current for causing a metal to be deposited on the substrate from the plating solution is supplied, a reverse current period in which a reverse current pulse flowing in the opposite direction to the forward current is supplied, and a current pause period in which the supply of current is paused partway during a transition from the reverse current pulse to the forward current. The control unit controls the length of the current pause period such that the width of fluctuation of the plating voltage after the reverse current pulse is supplied falls within a predetermined range.

The application provides a light-transmitting PVD coating metal deposition control method and system, relates to the technical field of strategy optimization, and comprises the following steps: acquiring plastic part characteristic information of a plastic part sample, a target metal deposition effect, and the plastic part sample being a plastic part to be coated by light-transmitting PVD; acquiring light-transmitting PVD coating process information, including an initial light-transmitting PVD coating control scheme corresponding to the plastic part characteristic information; performing metal deposition characteristic detection to obtain a detected metal deposition effect; determining whether the target metal deposition effect is met; if not, performing optimization adjustment on the initial light-transmitting PVD coating control scheme to obtain an optimized light-transmitting PVD coating control scheme. The application solves the technical problem that in the prior art, light-transmitting PVD coating process control often relies on experience and rules to adjust parameters, ignores the requirements of different plastic parts on coating process parameters, and leads to the fact that the quality of a film layer cannot stably reach a target effect, thereby affecting product quality.

The application provides a semiconductor optoelectronic device and an optoelectronic modulator, and belongs to the technical field of semiconductor manufacturing. The semiconductor optoelectronic device comprises a substrate, a cladding layer arranged on the substrate, an optical waveguide and a waveguide redundancy pattern arranged correspondingly in the cladding layer, and at least one metal deposition area arranged in the cladding layer. The metal deposition area is arranged on one side or both sides of the optical waveguide, and the metal deposition area is arranged in the gap between any adjacent waveguide redundancy patterns, and the metals in the same metal deposition area are interconnected. According to the application, the metal filling can extend into the gap between the waveguide redundancy patterns of the previous layer and form a connected structure, the limitation that the two cannot overlap is reduced, a large-area electrode can be prepared, the performance of the optical waveguide device is ensured, and the electrode performance is improved.

The application discloses a distance real-time regulation device and method suitable for a high-speed metal particle solid deposition process, and belongs to the technical field of alloy component preparation and repair. The device comprises a metal deposition device, a fine adjustment workbench, a deposition gun, a mechanical arm and a laser range finder. The method comprises the following steps: in a deposition process, the laser range finder is used for continuously and in situ ranging the workpiece surface and collecting distance data in real time; the collected deposition distance is compared with a pre-set initial deposition distance; if the instantaneous deviation of the current deposition distance and the initial deposition distance is greater than an adjustment threshold, the fine adjustment workbench is controlled to move along the axial direction of the deposition gun, so that the actual deposition distance returns to the target range. The application adopts a macroscopic and microscopic two-level collaborative regulation architecture, can realize real-time regulation of the micron-level precision of the deposition distance without interrupting the macroscopic deposition path, and significantly improves the adjustment efficiency and the stability of the deposition process.

This invention discloses a semiconductor gate structure and its fabrication method, applicable to the field of semiconductor process technology. The method includes: obtaining a wafer to be fabricated; depositing gate metal on the surface of the wafer; forming metal particle defects at the edge of the wafer based on the deposited gate metal; performing edge etching on the wafer to remove the metal particle defects; and polishing the edge-etched wafer. During gate metal deposition, the wafer's edge is prone to forming metal particle defects due to numerous edge defects. Edge etching removes these metal particle defects, thus preventing scratch defects during polishing and improving the yield of semiconductor device fabrication.

This invention discloses a handheld laser cladding device and method for efficient and stable in-situ repair, relating to the field of additive manufacturing technology. It includes a welding torch body, with a laser connected to one end of the torch body and a powder feeding mechanism connected to the other end of the laser. An internal stabilization adjustment mechanism is installed inside the laser. An external multi-axis stabilization mechanism is installed at the lower part of the welding torch body, and an algorithm control mechanism is installed at the upper part of the torch body. This invention employs the aforementioned handheld laser cladding device and method for efficient and stable in-situ repair. The motion state is read by a spatial position sensor and transmitted to the internal stabilization adjustment mechanism and the external multi-axis stabilization mechanism for dynamic stabilization control, improving the stability of the handheld laser cladding process. This enables in-situ repair and cladding manufacturing of large-sized complex structural parts, improving the uniformity and microstructure of the cladding metal deposition.

The application provides a kind of electroplating method, by periodically setting direct current output and pulsating current output in electroplating process, by setting pulsating current output, not only can ensure the thickness of metal deposition at the bottom of hole in back hole gold process is improved, also improves the electrochemical deposition efficiency, even avoid the problem that the step coverage of metal deposition at the bottom of hole in constant direct current large current electroplating is low, the electrochemical deposition efficiency is low in constant direct current small current electroplating, by setting direct current output, can ensure that the uniformity of film thickness after electrochemical deposition and the uniformity of direct current plating are basically consistent, therefore, by periodically setting direct current output and pulsating current output in electroplating process, and direct current and pulsating current are applied to the anode section interval of electroplating device, not only can ensure the thickness of metal deposition at the bottom of hole in back hole gold process is improved, also can improve the electrochemical deposition efficiency, can ensure that the uniformity of film thickness after electroplating and the uniformity of direct current plating are basically consistent.

The application discloses a method for preparing a metal layer on a chip, and belongs to the technical field of chip manufacturing. In the preparation method, firstly, a trapezoidal structure with an upper positive and a lower negative is formed by crossing positive and negative photoresists, a continuous permeation channel is constructed in the vertical direction, the photoresist stripping solution can quickly permeate to the contact surface of the metal and the photoresist, the Lift-off process time is significantly shortened, and the residual problem caused by the metal bridging is effectively avoided; secondly, a separation layer is deposited on the surface of the positive photoresist, mutual dissolution of the positive photoresist and the negative photoresist in the developing, etching and metal deposition processes can be effectively prevented, the integrity of the double-layer photoresist structure is ensured, and even under the high-temperature or plasma etching working condition, the interface delamination phenomenon does not occur.

The application discloses a high-vacuum furnace temperature control method and system based on partitioned thermal field reconstruction, and relates to the technical field of furnace temperature feedback control. The method comprises the following steps: dividing a coating processing area of a photovoltaic cell in a high-vacuum furnace according to a temperature difference distribution, and determining a plurality of processing sub-areas; performing metal deposition rate analysis, and determining a standard deposition rate curve; based on the temperature control parameter threshold values of a plurality of heating elements in the high-vacuum furnace, taking the approximation of the standard deposition rate curve as the target, performing temperature control parameter optimization according to the plurality of processing sub-areas, and generating an optimal temperature control parameter scheme; controlling the high-vacuum furnace to coat the cell to be processed according to the optimal temperature control parameter scheme, and performing feedback regulation according to a preset PID control mechanism. The technical problems that the temperature control of the high-vacuum furnace is uneven during the coating process, and the processing precision is low and the coating quality is unstable in the prior art are solved, and the technical effects that the coating quality and the processing precision are improved through multi-point temperature control optimization are achieved.

This invention discloses a multi-spectral intelligent control device based on programmable patterned electrodeposition, comprising at least two types of reversible metal electrodeposition units with different patterns, arranged in a pixelated array. Each reversible metal electrodeposition unit consists of an infrared high-transmittance substrate layer, a conductive thin film layer, a patterned dielectric layer, a metal ion electrolyte layer, and a counter electrode. The patterned dielectric layer has patterned grooves; when an electric field is applied, metal is deposited on the patterned grooves, thus presenting the corresponding pattern. This invention arranges the reversible metal electrodeposition units in a specific order to form a large-area pixelated array device. Each reversible metal electrodeposition unit is equivalent to a unit of an electromagnetic metasurface and can be independently controlled, realizing spatial programming and dynamic reconstruction of the target multi-spectral characteristics. This allows for real-time, dynamic, and reversible reconstruction of large-area macroscopic optical patterns, thermal radiation distributions, and microwave scattering fields.

Methods, apparatuses, and systems for thin film resistors (TFRs) are provided. An example method includes a semiconductor structure with a device area and resistor area. The resistor area includes thin film resistor patterning. A dielectric layer is formed over the device area and the resistor area. The dielectric layer is planarized. In a first embodiment, the dielectric layer is etched over the device area. In a second embodiment, the dielectric layer over the device area has a via formed in it. A metal deposition layer is deposited. The metal deposition layer is etched to form a metal layer and expose the TFRs.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.

This invention discloses a high-performance flexible shielding film, its preparation method, and its applications. The method includes: roughening the surface of a flexible polymer substrate and laminating a photosensitive dry film onto the surface of the substrate to obtain a pretreated film; patterning and developing the photosensitive dry film to expose a target patterned area on the pretreated film, and then catalytically activating the target patterned area to selectively attach catalytically active components to the target patterned area to obtain an activated film; depositing a metal seed layer on the target patterned area, and then selectively depositing a gradient composite shielding layer on the metal seed layer to obtain an electroplated film; and finally, peeling the electroplated film to remove areas on the photosensitive dry film where no metal deposition has occurred, resulting in a high-performance flexible shielding film. This achieves a flexible shielding film that combines ultra-high shielding efficiency, excellent flexibility, high degree of patterning freedom, and good environmental stability.