400 results about "Metal deposition" patented technology

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a semiconductor device with an integrated heat dissipation function for a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The single MOS cell comprises a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode, the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer, the profile of the cross section of the grid electrode is in an H shape, and the grid electrode comprises two longitudinal parts and a transverse part used for bridging the two longitudinal parts. According to the invention, the H-shaped gate structure is in bridge connection with the double longitudinal grooves through the transverse part, so that the channel width is increased, and the on-resistance is reduced; a current path is further optimized by combining a metal deposition layer and a heavily doped N + layer in the bottom doping layer; and the metal layer is connected in parallel to conduct electricity, so that the resistance is reduced, and the heavily doped N + layer inhibits the JFET effect, so that the resistance is reduced by more than 10%.

The invention relates to a modified current collector for a cathode-free metal battery and a preparation method and application thereof.The preparation method comprises the steps that an in-situ modification reaction is conducted on the surface of a copper current collector to obtain a current collector coated with a copper oxide nanometer material, and then selenium is introduced to the surface of the current collector coated with the copper oxide nanometer material through a partial in-situ substitution reaction to obtain the modified current collector coated with the copper oxide nanometer material. The preparation method comprises the following steps: preparing a copper selenide and copper oxide composite modified current collector, performing in-situ lithiation reaction through electrochemical deposition, and partially converting to generate corresponding lithiates, thereby obtaining the modified current collector for the non-anode metal battery. According to the invention, the functional artificial interface layer with lithium affinity, high stability and high ionic conductivity is constructed on the surface of the copper-based current collector in situ, so that the key problems of uneven metal deposition and unstable SEI layer on the surface of the negative electrode current collector in the current research of the metal secondary battery without the negative electrode are solved, the formation of dendritic crystals and the occurrence of side reactions are inhibited, and the service life of the metal secondary battery is prolonged. Therefore, the coulombic efficiency, the safety and the cycle life of the battery are improved.

The invention discloses a conductive yarn and a preparation method thereof, relates to the technical field of functional textile materials and composite conductive fiber preparation, and can solve the problems that an existing conductive yarn is poor in flexibility, insufficient in durability, prone to oxidation failure and difficult to integrate multiple functional performances. The preparation method comprises the following steps that S1, PBO yarn is soaked in a dopamine solution, a PDA modification layer is formed on the surface of the PBO yarn through a polydopamine self-polymerization reaction, and the PDA modification layer provides a chelation site and a bonding interface for metal deposition; s2, the PDA modified PBO yarn obtained in the step S1 is subjected to chemical silver plating, silver is deposited on a PDA modified layer to form a continuous conductive layer, and conductive PBO core yarn is prepared; s3, carrying out melt blending and granulation on the low-dielectric-constant flame-retardant filler and thermoplastic polymer resin to prepare flame-retardant composite particles; and S4, spinning by taking the conductive PBO core yarn prepared in the step S2 as a core layer and a melt formed by melting the flame-retardant composite particles prepared in the step S3 as a skin layer to prepare the conductive yarn.

An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.

The invention provides a heterocyclic derivative and an organic electroluminescent device thereof, and belongs to the technical field of organic electroluminescence. The heterocyclic derivative provided by the invention has relatively weak metal adsorption capacity, when the heterocyclic derivative is used as a nucleation inhibition layer material to be applied to the organic electroluminescent device, deposition of metal on the surface of a thin layer can be effectively inhibited, and meanwhile, the heterocyclic derivative is used as a covering layer material to improve the optical coupling efficiency of the organic electroluminescent device, so that the organic electroluminescent device can be applied to the field of organic electroluminescent devices. And the luminous efficiency of the device is effectively improved. The heterocyclic derivative and the organic electroluminescent device thereof have good application effect and industrialization prospect.

The invention discloses a rare earth metal electrolysis system and an electrolysis furnace thereof, and relates to the technical field of metallurgy, the rare earth metal electrolysis system is characterized by comprising a potential data acquisition and preprocessing module, a dendritic crystal feature extraction and quantification module, a dendritic crystal identification and intelligent determination module and an inverse pulse control and dynamic regulation module, in the electrolysis process, potential distribution original data of the surface of a rare earth metal cathode are detected and collected in real time, the obtained original data are preprocessed, and a preprocessed potential data set is established based on a time sequence. According to the method, intelligent, real-time and accurate inhibition of dendritic crystals in the rare earth metal electrolysis process is achieved, short circuit, splashing and electrode ablation are effectively prevented, the compactness and purity of metal deposition are improved, the current efficiency is remarkably improved, and compared with a traditional scheme, the method has the advantages of being high in real-time performance, good in inhibition effect, small in interference and high in adaptability, and the method is suitable for popularization and application. And efficient and safe preparation of the rare earth metal is ensured.

The invention provides a modified negative electrode current collector for a sodium metal battery and a preparation method of the modified negative electrode current collector, and belongs to the technical field of secondary batteries. The modified negative electrode current collector comprises a metal substrate and an electron-ion composite conductor coating, the electron-ion composite conductor coating is located on the surface of the metal substrate, and the electron-ion composite conductor coating is obtained by compounding any one of a zeolite molecular sieve and an expansive soil material with a graphitized carbon material. The method disclosed by the invention is simple and feasible, the obtained modified negative electrode current collector can be widely applied to a high-energy-density negative-electrode-free sodium metal battery system, and due to the fact that sodium metal deposition is more uniform and stable, compared with a negative electrode current collector modified only by a graphitized carbon material, the modified negative electrode current collector has better cycling stability.

The invention provides a control method and system for metal deposition in light-transmitting PVD coating, and relates to the technical field of strategy optimizing.The control method comprises the steps that plastic part feature information and a target metal deposition effect of a plastic part sample are obtained, and the plastic part sample is a plastic part subjected to light-transmitting PVD coating; acquiring light-transmitting PVD coating process information, wherein the light-transmitting PVD coating process information comprises an initial light-transmitting PVD coating control scheme corresponding to the plastic part feature information; carrying out metal deposition characteristic detection to obtain a detected metal deposition effect; judging whether a target metal deposition effect is met or not; and if not, performing optimization adjustment on the initial light-transmitting PVD coating control scheme to obtain an optimized light-transmitting PVD coating control scheme. The method solves the technical problems that in the prior art, control over the light-transmitting PVD coating process often depends on experience and rules for parameter adjustment, the requirements of different plastic parts for coating process parameters are ignored, the film layer quality cannot stably reach the target effect, and then the product quality is affected.

The present application provides an electrode assembly, a battery cell, a secondary battery, and an electric device. The electrode assembly comprises a positive electrode sheet, a negative electrode current collector and a separator located between the positive electrode sheet and the negative electrode current collector; the electrode assembly further comprises a modification layer, the modification layer is located between the negative electrode current collector and the separator, and the modification layer comprises a base material and an active material dispersed in the base material; the lithium metal nucleation overpotential of the base material is greater than or equal to 80 mV, and the lithium metal nucleation overpotential of the active material is less than that of the base material. The modification layer in the electrode assembly of the present application can reduce volume expansion during the deposition of metals such as lithium and sodium on the negative electrode current collector, so that the risk of piercing the separator caused by volume expansion is reduced, thereby improving the reliability and the cycle performance of batteries.

The invention belongs to the field of catalytic electrodes, and particularly discloses a modified nickel-based electrode and a preparation method thereof.The preparation method of the modified nickel-based electrode comprises the steps that 1, a nickel-based electrode is placed in a precursor solution to be soaked and then transferred into an inert atmosphere or a vacuum atmosphere to be roasted, and a primary modified electrode is obtained; and 2, the step 1 is repeated for one or more times, a secondary modified electrode or a multi-stage modified electrode can be prepared, and the precursor solution is any one or more than two of a sodium phosphite solution and a metal salt solution. A nickel-based electrode is treated through sodium phosphite, phosphide with heterojunction and electronic properties is formed on the surface of the nickel-based electrode, more active sites are provided, a metal salt solution is introduced to treat the sodium phosphite, new active components are introduced, and the performance of the catalytic electrode is regulated and controlled through metal deposition and alloying; and the synergistic effect between the introduced metal element and nickel interacts in the catalytic reaction, so that the catalytic activity and selectivity of the electrode are jointly improved.

The invention discloses a vertical plasmon waveguide device structure capable of being coupled by an optical fiber and a preparation method of the vertical plasmon waveguide device structure, and belongs to the technical field of integrated optoelectronics, and the structure is composed of a pair of metal gratings and a vertical metal-medium-metal plasmon waveguide. The structure comprises a silicon substrate layer, a lower metal layer, a dielectric layer and an upper metal layer which are arranged from bottom to top and is divided into a grating area and a waveguide area, the grating area comprises a dielectric grating area and a metal grating layer, and the waveguide structure comprises the lower metal layer, the dielectric layer and the upper metal layer. According to the design of the invention, the limitation of mass production caused by an overlay process of a mode converter between heterogeneous integrated waveguides is avoided, and the preparation robustness of the device is improved. The optical insertion loss caused by the roughness of the side wall of the waveguide is improved in a metal deposition-dielectric spin coating-metal deposition mode, and the dielectric layer can be replaced to realize multiple device functions.

The invention relates to the technical field of lithium / sodium ion batteries, in particular to a modified current collector, a preparation method of the modified current collector and a negative-electrode-free secondary battery, the modified current collector comprises a porous metal substrate layer; the deposition layer is formed in the porous metal substrate layer, the deposition layer is formed in the porous metal substrate layer through magnetron sputtering of metal Bi or metal Ag or metal Sn or alloy BiAg or alloy BiSn or alloy BiAgSn, and the deposition layer serves as the negative electrode current collector of the negative electrode-free lithium battery or the negative electrode current collector of the negative electrode-free sodium battery. Volume expansion caused by lithium / sodium deposition can be relieved, generation of dendritic crystals in the circulation process is avoided, the reversibility of lithium / sodium metal deposition / stripping is improved, capacity loss in the circulation process is reduced, the cycle life of the battery is prolonged, and the safety performance of the battery is improved.

Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and / or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.

The invention provides an electrode assembly, a battery monomer, a secondary battery and an electric device. The electrode assembly comprises a positive pole piece, a negative pole current collector and an isolating membrane positioned between the positive pole piece and the negative pole current collector, the electrode assembly further comprises a modification layer, the modification layer is located between the negative electrode current collector and the isolating membrane, and the modification layer comprises a substrate material and an active material dispersed in the substrate material; the lithium metal nucleation overpotential of the substrate material is greater than or equal to 80 mV, and the lithium metal nucleation overpotential of the active material is smaller than the lithium metal nucleation overpotential of the substrate material. The modification layer in the electrode assembly can reduce volume expansion of metals such as lithium, sodium and the like on the negative electrode current collector in the deposition process, so that the risk of puncturing the isolating membrane due to the volume expansion is reduced, and the reliability and the cycle performance of the battery are improved.

The invention discloses an electrolysis process based on a high-entropy electrolyte and application of the electrolysis process, and belongs to the technical field of electrolytic metallurgy, an electrolyte metal salt ion source comprises Zn < 2 + >, Mn < 2 + > and Cu < 2 + >, an electrolyte anion source comprises Cl <->, NO3 <->, SO4 < 2-> and OTf <-> / TFSI <->, and the specific proportion is adjusted according to electrolyzed substances. Compared with a traditional electrolyte, the electrolyte has the advantages that dendritic crystals can be inhibited through anion synergism, the efficiency is improved to 95% or above, the metal deposition uniformity is improved, dendritic crystal growth is inhibited, the current efficiency is improved, the hydrogen evolution side reaction is reduced by 50%-60%, the current efficiency reaches 92% or above, an ethylene glycol-water mixed solvent is adopted for cyclic utilization, the consumption of an organic solvent is reduced, and compared with a traditional lead anode, the time is only 500 hours, and the cost is reduced. And the service life of the anode is prolonged to 2000 hours, the operation and maintenance frequency is reduced, the deposition sequence is regulated and controlled by regulating and controlling the proportion of anions such as Cl <-> / NO3 <->, and different alloy requirements are met.

The invention discloses a GaN-based HEMT device and a preparation method thereof, and belongs to the technical field of semiconductor devices, and the GaN-based HEMT device comprises an HEMT epitaxial structure, a source electrode structure, a grid electrode structure, a drain electrode structure, a stepped mixed drain electrode structure, a passivation layer, a source electrode field plate and a drain electrode field plate. The step-shaped mixed drain electrode structure is located between the grid electrode and the drain electrode and comprises a step-shaped hole injection layer and a second metal layer; the passivation layer covers the whole structure, and the source electrode field plate and the drain electrode field plate are respectively connected with the source electrode and the drain electrode through the through holes. The preparation method comprises the steps of epitaxial growth, etching treatment, ion implantation, metal deposition and the like. By optimizing the field plate design and the stepped mixed drain electrode structure, the breakdown voltage is remarkably improved, the dynamic on-resistance is reduced, the high-frequency characteristic and the reliability are improved, and the device is suitable for a high-voltage large-current scene.

The invention discloses a groove SiC MOSFET device and a preparation method thereof. The preparation method comprises the following steps: epitaxial growth; performing P-type ion implantation for the first time; performing first-stage groove etching; performing N-type ion implantation; implanting P-type ions for the second time; carrying out second-stage groove etching; growing gate oxide, polycrystalline silicon and an interlayer insulating layer; carrying out metal deposition; the beneficial effects of the invention are that the multi-stage trench structure is combined with the plane gate and the trench gate, so that the channel density is increased, the current capability is provided, and the conduction loss is reduced; the MPS diode structure is integrated, the forward voltage drop of the body diode is reduced, the discharge capacity is improved when inrush current occurs in the circuit, the reverse follow current capacity can be improved through the parallel Schottky diode structure, and electronic elements needed by a peripheral circuit are reduced; by integrating the built-in field plate structure, the electric field concentration effect at the bottom of the trench gate is effectively relieved.

The invention relates to a method for rapidly preparing a cell scanning electron microscope sample through cell surface metal deposition. The method comprises immobilizing a cell sample with an immobilizing agent; incubating in a catalyst solution; placing in a metal deposition solution for cell metal deposition; the cell sample is obtained. The prepared cell sample can be directly used for scanning electron microscope imaging after being dried. According to the method, the micro-nano structure on the surface of the cell is directly mechanically enhanced in the solution through electroless metal deposition, the cell sample is endowed with electrical conductivity, additional chemical modification on the cell is not needed, gradient dehydration on the cell is not needed, and metal spraying treatment on the cell is not needed; and cell scanning electron microscope sample preparation and imaging can be conveniently and quickly carried out.

A kind of heart sound sensing structure and its preparation method, the structure includes double SOI substrate, center mass, elastic support beam, piezoresistive sensing unit and capacitive sensing unit.The front surface of center mass is provided with additional mass layer, and the back surface is kept bottom layer silicon to increase thickness;Elastic support beam connects mass and frame;Piezoresistive sensing unit is composed of four piezoresistors to form wheatstone bridge, and capacitive sensing unit includes movable and fixed comb-tooth capacitive plate crossing each other.When the sound pressure gradient of heart sound signal drives mass to deviate, elastic support beam bends to change piezoresistive value, and at the same time, comb-tooth capacitive plate overlapping area changes to cause capacitive value change, to realize piezoresistive and capacitive dual-mode synchronous detection.Two kinds of detection mechanisms calibrate each other, which significantly improves the sensitivity and anti-interference ability of low-frequency heart sound signal.The preparation method is based on double SOI substrate, integrated by ion implantation, etching, metal deposition and 3D printing process, suitable for miniaturized wearable heart sound monitoring application.

The invention discloses a method for selectively separating valuable metals from a positive electrode material of a waste lithium battery, and belongs to the technical field of resource recycling of waste lithium ion batteries. The method comprises the following steps: preparing an aprotic deep eutectic solvent (DES) as a leaching agent and an electrolyte at the same time; the method comprises the following steps: adding a waste positive electrode material into DES, and leaching to obtain a DES leaching-electrolyte system; according to the method, the pulse voltage is applied in stages, selective separation of nickel, cobalt and manganese is achieved by controlling the pulse peak voltage (the first stage is-0.8 V to-1.0 V, the second stage is-1.0 V to-1.2 V, and the third stage is-1.2 V to-1.5 V), and the pulse frequency and the duty ratio are used for regulating and enhancing mass transfer and restraining side reactions. According to the method, the metal deposition potential difference is expanded through DES coordination regulation and control, efficient selective separation of nickel, cobalt and manganese is achieved in combination with pulse step-by-step voltage control, and the method has the advantages of being high in separation efficiency, few in side reaction, simplified in process, high in product purity and the like.

An exemplary etching method may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or may include oxygen or nitrogen. A flow ratio of the fluorine-containing precursor to the secondary gas may be about 1:1 or greater. The method may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include exposed metal. The substrate may define high aspect ratio structures. The method may include etching the exposed metal in the high aspect ratio structures.

To prevent metal deposited for joining from accumulating on a bottom surface of a diaphragm.SOLUTION: An opening adjustment plate 105 is provided between a support substrate 101 and a first semiconductor layer 102. The opening adjustment plate 105 has a second through-hole 113 having a diameter φ2 smaller than a diameter φ1 of an opening 112 of the first semiconductor layer 102. The second through-hole 113 is located within an area of the opening 112. The opening adjustment plate 105 and the support substrate 101 are joined together via a metal layer 106.SELECTED DRAWING: Figure 1

The invention discloses a coating diaphragm based on a low-reduction-potential MOF (Metal Organic Framework), a preparation method and application, and belongs to the field of new energy battery preparation. The coated diaphragm based on the low-reduction-potential MOF comprises a base film and an MOF coating which is coated on at least any surface of the base film and has the low reduction potential, and one side, coated with the MOF coating with low reduction potential, of the diaphragm is directionally close to the negative electrode of the electrochemical device. The MOF with low reduction potential is introduced to construct an electrochemically stable coating structure, and the coating is directionally close to the negative electrode side, so that the problems of capacity attenuation and safety caused by precipitation and deposition of a large amount of metal on the surface of the diaphragm are avoided; therefore, ion flow can be homogenized by virtue of the porous characteristic of the MOF material, dendritic crystal growth can be inhibited, and the stability of a diaphragm-negative electrode interface can be improved by virtue of the stable electrochemical property of the MOF material.

The invention discloses a medium-entropy steel manufacturing method, device and equipment, a medium and a product. The method comprises the steps that laser metal deposition equipment is controlled to conduct medium-entropy steel manufacturing based on initial manufacturing parameters, and a surface image and a test result of a formed medium-entropy steel product are obtained; when the test result does not meet the design requirement, determining defect information of the medium-entropy steel product according to the surface image and the test result; and the initial manufacturing parameters are corrected based on the defect information, the laser metal deposition equipment is controlled to conduct medium-entropy steel manufacturing based on the corrected manufacturing parameters, the step of obtaining the surface image and the test result continues to be executed till the design requirement is met, and the final manufacturing parameters are obtained. By establishing a closed-loop feedback control mechanism, real-time monitoring and adjustment are achieved in the LMD machining process, manufacturing parameters are dynamically optimized, the size precision and shape consistency of the medium-entropy steel product are remarkably improved, and the precision defect problem in traditional LMD manufacturing is solved.

The invention belongs to the field of manufacturing of printed circuits and assemblies thereof, and discloses a low-inductance lamination assembly method of a pulse power module, which comprises the following steps: placing a power semiconductor device and a decoupling capacitor into a cavity of a core substrate in a coplanar manner; laminating insulating layers and selectively windowing by using a closed-loop control method based on plasma spectrum monitoring; and finally, a bridging conductive layer directly bridging the top terminal of the element is formed through metal deposition. According to the invention, a lamination step is multiplexed as a key electrical connection forming process, and the dimension of a traditional three-dimensional commutation loop is reduced to a quasi-two-dimensional plane on a topological structure; therefore, current path geometric abrupt change and inductance bottleneck caused by vertical via holes are broken, and a structural basis is established for improving the electrical performance and electromagnetic compatibility of the module.

The invention provides a semi-supervised quality monitoring method based on physical information guidance in a laser metal deposition manufacturing process. According to the method, firstly, an image processing algorithm is designed to extract relevant features (such as length, width and area) of a molten pool; secondly, analyzing feature relevance by using a Spearman correlation coefficient and calculating a feature weight; further, constructing a physical information gain loss function in combination with internal defect physical knowledge and feature weights; and finally, based on the physical information gain loss function, developing a total loss function for model training and optimization, thereby realizing quality grade monitoring. According to the method, the feasibility of monitoring the model based on the molten pool characteristic quality in the LDED manufacturing process is proved, the model performance is remarkably improved by integrating physics knowledge input, and the robustness and generalization ability of the model are enhanced.

The invention discloses a plasma etching chamber, a cleaning method and semiconductor process equipment. The plasma etching chamber comprises a chamber body, a substrate table, a metal plate and an edge pressing piece. The edge pressing piece comprises a first end, the first end abuts against the side, away from the substrate table, of the metal plate, and the surface, extending along the side, away from the substrate table, of the first end is configured to be a first area. Wherein the metal plate is provided with an internal sputtering area and an insulating sputtering area surrounding the internal sputtering area, the internal sputtering area is used for providing cleaning particles for the inner wall of the chamber body under the excitation of plasma, and the first area is located in the insulating sputtering area; the insulating sputtering region is configured to inhibit formation of a conductive film in the first region of the blank holder during deposition of the cleaning particles. Cleaning can be completed on the premise that the vacuum cavity is not opened, and meanwhile the risk that a conductive film is formed on the edge of the edge pressing piece due to metal deposition, and then abnormal discharge is induced is eliminated.

This invention discloses a method for removing a double-layer positive photoresist for preparing metal bumps: S1, cleaning the epitaxial wafer; S2, spin-coating a first-type positive photoresist as the bottom layer onto the epitaxial wafer; S3, soft baking to cure the first-type positive photoresist; S4, spin-coating a second-type positive photoresist as the top layer onto the first-type positive photoresist; S5, soft baking to cure the second-type positive photoresist; S6, exposure using a photolithography machine to expose the double-layer photoresist; S7, post-baking; S8, development using an alkaline developer to develop the double-layer photoresist; S9, metal deposition using a metal deposition apparatus; S10, removing the double-layer photoresist using a photoresist stripping solution; S11, preparing metal bumps on the surface of the epitaxial wafer. This invention achieves a lift-off process using a double-layer positive photoresist, solving the problem of difficult preparation of small-sized metal bumps in Micro-LED micro-display devices, and enabling the preparation of metal bumps with small spacing and high thickness.

The application patent relates to the technical field of integrated circuit technology, and particularly relates to a manufacturing method of a full-gate device with four ports. The manufacturing method comprises the following steps: S1, epitaxial growth: firstly, N-epitaxial layer and P+ epitaxial layer, intrinsic silicon layer are grown on N+ substrate in sequence through epitaxial growth technology; S2, etching: the N-epitaxial layer, P+ epitaxial layer and intrinsic silicon layer are etched to remove the excess part; S3, thermal oxidation: the etched part is grown with SiO2 layer through thermal oxidation process; S4, ion implantation: N- region is doped to form N-source region through ion implantation process on the intrinsic silicon layer, and N+ region is doped to form N+ source region on the N-source region; S5, re-etching: etching is performed on the region of SiO2 layer to obtain a ring-shaped groove, a rectangular groove and a cylindrical groove; S6, metal deposition: metal is deposited in the ring-shaped groove, the rectangular groove and the cylindrical groove. The method can enhance the anti-TID effect of the device, and different potentials can be applied to the source and the substrate according to the actual circuit condition.

This invention discloses an on-demand metal jet forming method based on forced vibration, belonging to the field of 3D printing technology, including the following steps: Step 1, calculating the resonant frequency f of the molten metal column in the nozzle. n Step 2: Determine the excitation frequency f of the forced vibration system; Step 3: Input an excitation signal with frequency f into the forced vibration system, which drives the nozzle to vibrate axially; The forced vibration of the nozzle includes an unstable start-up stage and a stable stage. After the nozzle vibration enters the stable stage, a stable metal droplet jet with frequency f is generated; Step 4: After obtaining the stable metal droplet jet, the base plate is subjected to three-dimensional motion, and metal deposition is performed using the metal droplet jet to complete the forming of the metal component. The spraying frequency of this invention can reach tens of thousands of hertz, which can greatly improve the manufacturing efficiency of droplet-spraying metal additive manufacturing.