Cable semiconduction fracture treatment method

A processing method, semi-conductive technology, applied in the direction of connecting/terminating cable equipment, etc., can solve the problems of time-consuming, repeated grinding, etc.

Pending Publication Date: 2018-09-14
JIANGSU ZHONGTIAN TECH CABLE ACCESSORIES CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And it needs to be polished repeatedly after being treated with glass sheets, which takes a long time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cable semiconduction fracture treatment method
  • Cable semiconduction fracture treatment method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Such as figure 1 Shown, be a kind of cable semiconducting fracture treatment method of the present invention, at first semiconducting shielding layer is carried out preliminary scraping; Then wrap 1-2 layers of semiconducting tapes evenly on insulating layer and semiconducting shielding layer, use again The heating belt heats and vulcanizes the semi-conductive belt.

Embodiment 2

[0020] The invention uses a scraping device to scrape off the semiconductive shielding layer, and then evenly wraps 1-2 layers of semiconductive tape on the insulating layer and the semiconductive shielding layer. Such as Figure 1-2 As shown, the scraping device of the present invention includes a scraping blade 2, an angle adjustment bracket 3, a rotating block 4, a bearing 5, a transition block 6 and a base 7; the scraping blade 2 is installed on the angle adjustment bracket; the The angle adjustment bracket is installed inside the rotating block 4 ; the rotating block 4 is installed inside the transition block 6 through the bearing 5 ; the transition block 6 is arranged in the base 7 .

[0021] The angle adjustment bracket of the present invention includes a movable bracket body 31, a shaft seat one 32 with a shaft hole arranged on the rear side of the movable bracket body 31, and a shaft seat two 33 with a shaft hole arranged on the inside of the rotating block; The firs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a cable semiconduction fracture treatment method. The method comprises the following steps: firstly, preliminarily scarping a semiconduction shielding layer; uniformly warping1 to 2 layers of semiconduction tapes on an insulating layer and the semiconduction shielding layer, and performing heating vulcanization on the semiconduction tapes through a heating tape. The semiconduction shielding layer is not required to be polished after being preliminarily scraped, and the semiconduction tapes are subjected to heating vulcanization through the semiconduction tape. The vulcanized semiconduction tapes are stable, and smooth and flat semiconduction shielding positions and insulation interface transition positions can be guaranteed.

Description

technical field [0001] The invention relates to the technical field of cables, in particular to a method for treating semi-conductive fractures of cables. Background technique [0002] When dealing with semi-conductive fractures, the semi-conductive shielding layer is mainly stripped off by glass sheets. It must be guaranteed that the front end of the semi-conductive shielding layer transitions to a tapered surface evenly within a certain size. After scraping off the glass sheet, sand it with sandpaper. It is necessary to ensure that the transition between the semi-conductive shield and the insulating interface is smooth and flat. It is difficult to ensure an absolutely smooth transition at the interface between the insulating layer and the semi-conductive layer, and construction personnel are required to have higher handling techniques. And after processing with glass flakes, it needs to be polished repeatedly, which takes a long time. Contents of the invention [0003...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02G1/14
CPCH02G1/14
Inventor 缪炜庭张宝磊梁栋
Owner JIANGSU ZHONGTIAN TECH CABLE ACCESSORIES CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products