441results about How to "Uniform electric field distribution" patented technology

The invention discloses a measuring device and method for a trap parameter of solid dielectric. The solid dielectric material is charged by using a three-electrode corona discharge system; a material sample to be tested is placed below a single-needle electrode and a metal mesh electrode; the sample is adhered to a metal disc electrode through conductive silicone grease and is charged by the three-electrode system; after charging is ended, an external voltage is removed, and short circuit discharge is performed to remove surface free loads; surface potential of the measured sample is attenuated; and the trap energy level and the trap density parameter of the material can be calculated through a signal conditioning circuit and a data acquisition system. The measuring device comprises a constant temperature box, the three-electrode coronate charging system, a surface potential measuring system, a sample preheating system, a rotary electrode and a temperature and humidity control system. The invention provides an effective analysis means for research in representation of an aging condition of a polymer insulating material and an aging rule of polymer by the trap parameter and research in aspects such as a solid dielectric surface electrification phenomenon and surface flashover performance influence.

The invention belongs to the technical field of measurement of oil-water two-phase flow and relates to a coaxial conductivity sensor for detecting oil content of the oil-water two-phase flow. The coaxial conductivity sensor comprises an annular outer electrode, an inner electrode and two protection electrodes which are coaxial, wherein the two protection electrodes are fixed to two ends of the inner electrode respectively; insulated gaskets are arranged among the two protection electrodes and the inner electrode; and the radiuses of the two protection electrodes are equal to that of the inner electrode. Meanwhile, the invention provides a measurement system employing the coaxial conductivity sensor and a measurement method realized employing the measurement system. The measurement system comprises an excitation module, a coaxial conductivity sensor, a measurement module, a demodulation module, an acquisition module and a calculation unit. The coaxial conductivity sensor and the measurement system provided by the invention are improved in measurement accuracy, particularly measurement accuracy under the condition of high water content.

The present invention discloses a carborundum secondary epitaxy material structure used for carborundum preparation comprising of: a carborundum single crystal substrate, a first homoepitaxy layer on surface of substrate, a secondary epitaxy material on surface of first homoepitaxy which comprises of p-type carborundum buffer layer, n-type carborundum active layer and unintentional doped intrinsic carborundum layer. Corresponding to MESFET (metal mosfet) with common structure, the MESFET fabricated by secondary epitaxy type has merits of small source-drain resistance, large ohm interface and uniform electric field distribution of working field in MESFET, can enhance transconductance, improve working voltage and power of appliance, and at the same time, the technique of preparation is simplified and the stability of appliance is ensured.

A shield connector structure 1 includes a pair of connectors 2 and 6 that is capable of being fitted to each other and a conductive connector attachment portion 11. One connector 2 includes a terminal metal part 21, an insulating connector housing 22, and a conductive shield shell 23. The other connector 6 includes a terminal metal part 61, an insulating connector housing 62, and a conductive shield shell 63. The shield shell 23 is provided with a connection portion 49, and the shield shell 63 is provided with a connection portion 83. When the connectors 2 and 6 are fitted to each other so that the shield shells 23 and 63 are shield-connected to each other, each of the connection portions 49 and 83 is connected to the connector attachment portion 11 and the shield shells 23 and 63 are grounded.

The invention discloses a three-electrode trigger switch. The three-electrode trigger switch is of a coaxial structure, and comprises a positive electrode, negative electrodes, trigger electrodes, negative sealing elements, insulation covers and insulation separators. The insulation cover is used for insulating and fixing electrodes, and various parts are compressedly sealed by an insulation fastening rod and an insulation fastening pressure plate. A gas inlet channel used for discharging gas is arranged inside the positive electrode, high pressure gas flows past trigger gaps to bring charged particles produced by the trigger gaps into a main switch gap, so that the main gap under high pressure is communicated. The high pressure gas brings the charged particles produced by discharging of the trigger gaps out of the switch through gas outlet through holes at the bottom of the negative electrodes and gas outlet channels of the negative sealing elements, insulation strength recovering of the switch is accelerated, a corresponding trigger system is matched, and the switch can be used with repetition frequency. The three-electrode trigger switch is simple in structure and high in working stability and can be applicable to various impulse power supplies.

The invention discloses a passive optical voltage transformer based on electrooptical effect, which comprises an optical voltage sensing head and an electrical unit, wherein the electrical unit comprises an optical closed-loop feedback control unit and a signal processing unit; the optical closed-loop feedback control unit is connected with the optical voltage sensing head; and the optical voltage sensing head is connected with the signal processing unit. The output power of an SLD (Super Luminescent Diode) light source is more stable, the shift of central wavelength of the SLD light source is effectively controlled, the problem that the output power is reduced because of the aging SLD light source can be prevented; the optical power fluctuation of the optical path polarization state caused by the factors, such as temperature and optical fiber, can be eliminated, the stability and the reliability of the optical path system are improved; one fourth of the influence of wave plate temperature performance on the system is weakened; and the accuracy of the data is improved.

The present invention relates to a narrow gap-big gap combined microwave plasma reaction cavity, belonging to microwave plasma excitation technique field. The reaction comprises a vacuum column shape reaction cavity which is arranged vertically, and the upper part and the lower part of the reaction cavity are both sealed by a demountable flange. An annular wave guide with a rectangular-shaped cross section is winded in the middle part of the reaction cavity. The inner wall of the annular wave guide is coincided with the outer wall of the cavity. The inner wall of the annular wave guide is opened with a narrow gap which is corresponding to the wave node quantity of the standing wave inside the annular wave guide. The narrow gap is positioned at the standing wave node. The outer wall of the annular wave guide is opened with a through hole which is used for connecting with the drop-leaf mode wave guide switch or with the coupled antenna. The present invention is characterized in that the inner wall of the annular wave guide is opened with a big gap which is used for forming a symmetric high field inside the reaction cavity, and the high filed is strongest in the middle and then decreased periphery outward gradually; and the high filed is complemented with the electric field formed by the narrow gap to make the electric field is evenly distributed inside the reaction cavity. The present invention has the advantages of effectively improving the distribution of the electric field, producing more even plasma which can also exist inside the middle of the cavity.

The invention provides an auxiliary anode mask micro electrolytic machining array micro-pit system and method, and belongs to the technical field of micro electrolytic machining. The system comprises an upper clamp (1), a lower clamp (7), a tool cathode (2) which is arranged on the upper clamp (1), a tool anode (6) which is arranged on the lower clamp (7), mask plates (5) which are arranged on the surface of the tool anode (6) and of group drilling structures, and auxiliary anodes (4) which are fixed on the lower clamp (7) and surround edges of the tool anode (6); an electrolyte flow pass is formed between the tool cathode (2) and the tool anode (6), and the system further comprises a main power supply (9) and an auxiliary power supply (8), wherein the positive pole of the main power supply (9) and the positive pole of the auxiliary power supple (8) are connected with the tool anode (6) and the auxiliary anode (4) respectively, and the negative pole of the main power supply (9) and the negative pole of the auxiliary power supple (8) are both connected with the tool cathode (2). The auxiliary anode mask micro electrolytic machining array micro-pit system and a method are characterized in that an auxiliary power supply voltage is smaller than a main power supply voltage, and a potential difference exists between the auxiliary power supply voltage and the main power supply voltage, so that the electric current density in all mask holes of the work piece surface is consistent, and the dimensional homogeneity of array micro-pits is improved.

The invention provides a vivaldi antenna and a dual-polarized probe, which solves the problems of poor high-frequency cross-polarized levels and low port coupling isolation of existing probe antennas.The technical points are that the vivaldi antenna comprises three metal layers and dielectric plates arranged between each two adjacent metal layer; the intermediate metal layer is provided with a feeding structure, and the other two metal layers are provided with vivaldi antenna radiation structures electrically connected to the feeding structure; and the two vivaldi antenna radiation structuresare symmetric along the center line of the antenna to realize the double-grooved vitaldi structure, which effectively improves low-end standing waves, so that the antenna has a good high-frequency cross-polarization level and has a relatively high isolation degree. Meanwhile, by arranging a clamping groove in the center line position of each antenna, the orthogonal connection of two vivodi antennas can be realized by using the clamping grooves to form a dual-polarized probe, and the vivaldi structures are respectively arranged on the two sides of each clamping groove to avoid destroying the circular back cavities of the vitaldi structures. The phase centers of the two antennas of the probe can be aligned without destroying the circular slit back cavities of the vitaldi structures.

The invention discloses a cathode wire for a wet electrostatic dust collector. The cathode wire comprises a cathode rod (1), and is characterized in that bur rings (2) are arranged on the cathode rod (1); the discharging points of the bur rings (2) are of sharp-pointed annular or polygonal structures; connecting pieces (4) are arranged at the two ends of the cathode rod (1) respectively, so that the cathode wire is fixed on a cathode frame through the connecting pieces (4). The bur ring type cathode wire is simple in structure and easy to manufacture and mount; the discharging points of the bur rings form the sharp-pointed annular or polygonal structures, so that the bur rings have a discharging function in each direction, and the number of discharging points can be set according to needs; the wet electrostatic dust collector with the cathode wire has the characteristics of low critical coronal voltage, high electric field intensity and uniform electric field distribution, the problem of corona dead zones of a conventional wet electrostatic dust collector is well solved, and the dust collection and defogging efficiency of the wet electrostatic dust collector is further improved.

The invention discloses an open-and-close type three-dimensional trench electrode silicon detector. An open-and-close type groove electrode and a central electrode are formed after etching on the silicon through diffusion and doping, the open-and-close type groove electrode surrounds the central electrode, the central electrode is connected with the negative electrode, the open-and-close type groove electrode is connected with the positive electrode, and the open-and-close type groove electrode is an open and discontinuous cylindrical structure. The bottom of the detector has a silicon dioxide protective layer. The area of the dead zone is smallest, particles can enter from both sides during working, and reaction is more flexible. The problem that in the prior art, the three-dimensional silicon detector can only be single-sided etched, the particles can only be incident on one side, and there is a dead zone, so that the detection performance of the detector is affected.

A plurality of concentric ring-shaped slots (300) to (304) are formed in a planar antenna member (3), and the thickness of conductors in the central part is made relatively thin and the thickness of peripheral conductors is made relatively thick, so that a microwave can easily pass through the slots (300) to (304) without being attenuated, and a uniform electric field distribution can be provided and uniform high-density plasma can be generated in a processing space on an average. As a result, an object to be processed can be provided close to the antenna member (3) and the object can be uniformly processed at high speed.

The invention discloses a step p-GaN enhanced AlGaN/GaN heterojunction field effect transistor. According to the transistor structure, a p type GaN cap layer is introduced into the transistor grid edge, and the thickness of the cap layer is smaller than that of a p type GaN dielectric layer under a grid. The p type GaN cap layer can lower the two-dimensional electron gas concentration of a conducting channel in the area, and the electric field modulation effect is achieved. By generating a new electric field peak, a high electric field at the grid edge is lowered, and electric field distribution on the surface of the transistor is more uniform. Compared with a traditional p-GaN enhanced structure, the step p-GaN enhanced AlGaN/GaN heterojunction field effect transistor is obviously raised and improved in the aspects of breakdown voltage and reliability.

A microwave plasma processing apparatus which easily ensures uniformity and stability of plasma in response to changes of process conditions and the like. The microwave plasma processing apparatus 100 generates plasma of a process gas in a chamber by microwave and performs plasma processing to a work to be processed by using the plasma. On a plate 27 composed of a conductor covering the outer circumference of a micro wave transmitting board 28, two or more holes 42 for propagating microwave from an edge part of the microwave transmitting board 28 to an inner part of the holes 42 are formed. Volume adjusting mechanisms 43 and 45 adjust the volume of the holes to adjust impedance of each unit when the microwave transmitting board 28 is divided by unit to which each of the holes 42 belongs, and electric field distribution of the microwave transmitting board 28 is controlled.

The invention relates to a circular shielding insulating bus, which has the advantages of high carrying capacity, good heat dissipation, low temperature rise, strong electric insulation performance, no environmental disturbance and high reliability. The circular shielding insulating bus comprises a circular conductor and an outer layer sheath, wherein a plurality of insulating shielding layers are arranged between the circular conductor and the outer layer sheath and consist of insulating layers and shielding layers; each insulating layer comprises two polytetrafluoroethylene layers and a thermal shrinkage sheath from inside to outside; and silicone oil is uniformly brushed between the polytetrafluoroethylene and the thermal shrinkage sheath.

The invention discloses a novel high-energy secondary aluminum battery. The novel high-energy secondary aluminum battery comprises a positive electrode, a negative electrode and electrolyte, wherein a positive electrode active material is a sulfur-based composite material coated with a carbon material, wherein the sulfur-based composite material is vulcanized polyacrylonitrile; the negative electrode is an aluminium-containing negative electrode, and the electrolyte is non-aqueous aluminium-containing electrolyte. The secondary aluminum battery disclosed by the invention is high in specific capacity and circulating performance; and a preparation process is simple and the novel high-energy secondary aluminum battery is suitable for industrial production.

The invention relates to the technical field of display, and discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate, a thin film transistor array and a photosensitive diode array located on the substrate in sequence, and also comprises a first passivation layer, a first planarization layer and a second passivation layer located betweenthe thin film transistor array and the photosensitive diode array and sequentially arranged in the direction from the thin film transistor array to the photosensitive diode array. Via holes are formed in the first passivation layer, the first planarization layer and the second passivation layer, and the photosensitive diode array is electrically connected with the thin film transistor array through the via holes. According to the display panel, the photosensitive diode array structure layer is integrated, the fingerprint induction and recognition functions of the display area can be achieved,the dark-state current of the photosensitive diode structure is low, the contrast ratio of fingerprint imaging is high, and imaging is clear.

The invention discloses a high voltage pulse electric field sterilization common-field treatment chamber with adjustable electrode distance. The treatment chamber consists of two metallic hollow tubular electrodes and an insulator isolation tube, wherein the insulator isolation tube is positioned in a treatment cavity formed between the two metallic hollow tubular electrodes. The metallic hollow tubular grounding electrodes are in threaded fit with the insulator isolation tube, so that the adjustability of the electrode distance in the common-field treatment chamber is realized. The inner ports of the metallic hollow tubular electrodes in the treatment chamber are rounded, so that the strength of a peak electric field nearby the electrodes is reduced, the 'discharge' problem caused by over high local electric field in the treatment chamber is solved, and the electric field in the flowing direction of a material is distributed relatively uniformly. The treatment chamber is simple in structure, low in cost, convenient to process and convenient to disassemble and assemble; the adjustability of the electrode distance in the common-field treatment chamber is realized; and the electrode distance in the treatment chamber can be adjusted according to different application requirements, so that the electric field strength and the electric field distribution in the treatment chamber are improved.

The invention discloses an AlGaN/GaN heterojunction field effect transistor with a partial P type GaN cap layer. According to the transistor structure, the P type GaN cap layer is introduced into the grid edge of the transistor and will reduce the two-dimensional electron gas concentration of a conducting channel of the region to achieve the electric field modulation effect. By generating a new electric field peak, high electric field of the grid edge is reduced, and the electric field on the surface of the transistor is more uniform. Compared with a traditional structure, the breakdown voltage and reliability of the field effect transistor are obviously improved.

The invention discloses an insulator grading-ring allocation structure for same-tower double-circuit compact-type transmission lines. The allocation structure comprises insulator strings symmetrically arranged on two sides of a T-shaped tower. The insulator strings are connected into three V-shaped structures through a plurality of bundle conductor hardware tools, and the three V-shaped structures are divided into an upper phase and a lower phase which are hung in a T-shaped tower window, wherein the upper phase is a W-shaped structure formed by two V-shaped dually-connected strings and is hung on a tower crossarm; the lower phase is a V-shaped dually-connected string of which one side is hung on a tower body, and the other side is hung on the tower crossarm and is connected into a structure with a shape of a down arrow through an intermediate insulator string hung on the middle part of the tower crossarm; and one side of the insulator string in the V-shaped structure and one side of the intermediate insulator string, which are close to a power transmission conductor, are both provided with annular grading rings, are connected to the bundle conductor hardware tools by use of a bracket, and are equipotential with the power transmission conductor. The grading-ring allocation can realize the homogenization of voltage distribution and electric field distribution of the insulator strings, prevents the corona discharge and electrical erosion loss on the high-voltage sides of the insulator strings, and improves the operation reliability of same-tower double-circuit compact-type lines.

The embodiment of the invention discloses a lateral structure avalanche photodetector and a preparation method thereof. The lateral structure avalanche photodetector comprises a substrate, a first epitaxial growth layer and a second epitaxial growth layer, wherein the substrate comprises a first semiconductor material region; an avalanche region is formed in the first semiconductor material region; the first epitaxial growth layer is formed as an absorption region; the upper surface of the first epitaxial growth layer is a light absorption surface and protrudes out of the upper surface of thefirst semiconductor material region; the lower surface of the first epitaxial growth layer is lower than the upper surface of the first semiconductor material region; the second epitaxial growth layerat least comprises a first part and a second part which are located on the two sides of the first epitaxial growth layer in the first direction, the first part and the second part cover two side walls, which protrude out of the first semiconductor material region, of the first epitaxial growth layer respectively, and the first part and the second part form at least one part of a first charge region and a second charge region respectively; and the first charge region, the absorption region, the second charge region, and the avalanche region at least partially overlap in the first direction.

The invention discloses a p-GaN enhanced AlGaN/GaN high-electron-mobility transistor with a partially intrinsic GaN cap layer. According to the transistor structure, the intrinsic GaN cap layer is introduced into a transistor grid electrode and the edge of a p type GaN medium layer of the transistor grid electrode, the two-dimensional electron gas concentration of a conducting channel in the area can be reduced by means of the intrinsic GaN cap layer, and the electric field modulation effect is achieved. A new electric field peak is generated, so that the high electric field of the grid edge is reduced, and an electric field on the surface of the transistor is distributed more evenly. Compared with a traditional p-GaN enhanced structure, the breakdown voltage and reliability of the novel structure are obviously improved.