Avalanche photodetector and preparation method thereof
An avalanche photoelectric and detector technology, used in circuits, electrical components, semiconductor devices, etc., can solve the problems of uneven electric field distribution in the absorption area and unsatisfactory gain-bandwidth product.
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[0118] The embodiment of the present invention also provides a preparation method of avalanche photodetector with lateral structure; for details, please refer to the attached image 3 . As shown, the method includes the following steps:
[0119] Step 201, providing a substrate, the substrate including a first semiconductor material region;
[0120] Step 202, performing an etching process on the first semiconductor material region to form a groove deep inside the first semiconductor material region;
[0121] Step 203, performing a selective epitaxial growth process to form a first epitaxial growth layer in the groove, the material of the first epitaxial growth layer being a second semiconductor material different from the first semiconductor material;
[0122] The first epitaxial growth layer is formed as an absorption region of the avalanche photodetector; the upper surface of the first epitaxial growth layer is a light absorption surface, and the light absorption surface pr...
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