Step p-GaN enhanced AlGaN/GaN heterojunction field effect transistor

Abstract

The invention discloses a step p-GaN enhanced AlGaN / GaN heterojunction field effect transistor. According to the transistor structure, a p type GaN cap layer is introduced into the transistor grid edge, and the thickness of the cap layer is smaller than that of a p type GaN dielectric layer under a grid. The p type GaN cap layer can lower the two-dimensional electron gas concentration of a conducting channel in the area, and the electric field modulation effect is achieved. By generating a new electric field peak, a high electric field at the grid edge is lowered, and electric field distribution on the surface of the transistor is more uniform. Compared with a traditional p-GaN enhanced structure, the step p-GaN enhanced AlGaN / GaN heterojunction field effect transistor is obviously raised and improved in the aspects of breakdown voltage and reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a p-GaN enhanced AlGaN / GaN heterojunction field effect transistor. Background technique [0002] Due to the limitations of the first-generation and second-generation semiconductor materials represented by Si and GaAs, the third-generation wide-bandgap semiconductor materials have been developed rapidly because of their excellent performance. As one of the cores of the third-generation semiconductor materials, GaN material is special in its polarization effect compared with Si, GaAs and SiC. Taking advantage of this particularity, people have developed AlGaN / GaN high electron mobility transistors, and AlGaN / GaN HEMTs are GaN-based microelectronic devices based on AlGaN / GaN heterojunction materials. The AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas (2DEG) at the heterojunction interface through spontaneous polarization and piezoelectric p...

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Problems solved by technology

[0007] In order to solve the device avalanche breakdown and current collapse effect caused by the peak electric field at the gate edge of the p-GaN enhanced AlGaN / GaN heterojunction field effect transistor in the prior art, the threshold voltage and output current are reduced, and the reliability reduce a series of problems, the present invention provides a novel p-GaN enhanced AlGaN / GaN heterojunction field effect transistor

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