The invention provides an SOI-LIGBT device capable of suppressing a Snapback phenomenon and a manufacturing method thereof. The cellular structure of the SOI-LIGBT device comprises a substrate, a buried oxygen layer, a thick dielectric layer, a thick silicon layer drift region, a P well region, a P-type heavily doped emitter region, a first N-type heavily doped region, a N-type buffer region, a P-type heavily doped collector region, a second N-type heavily doped region, a collector dielectric barrier layer, a collector contact electrode, a ultrathin top layer silicon drift region, a P emitter contact electrode, a gate oxide layer, a polysilicon gate, P strips, and N strips. The N strips and the P strips are alternately arranged in the thick silicon layer drift region in the Z direction. The ultrathin top layer silicon drift region enhances the buried layer electric field to improve the longitudinal breakdown voltage of the SOI device. The thick silicon layer drift region reduces the specific on-resistance of the device. Lateral linear variable doping is performed on the ultrathin top layer silicon drift region and the thick silicon layer drift region to adjust the surface electric field distribution so that the specific on-resistance is greatly reduced while the high breakdown voltage of the device is maintained.