34results about How to "Raise the energy barrier" patented technology

An atomic layer deposition system and method utilizing radicals generated from a high-density mixed plasma for deposition is disclosed. A high-quality oxide or oxynitride can be deposited by exposing a substrate to a first precursor which is adsorbed onto the substrate during a first phase of one deposition cycle. After purging the deposition chamber, the substrate is exposed to a second precursor which includes oxygen radicals and krypton ions formed from the high-density mixed plasma. The ions and radicals are formed by introducing a radical generating feed gas (e.g., O2) and an ion generating feed gas into a plasma chamber and exciting the gases to form the high-density mixed plasma. The radicals and ions are then introduced to the substrate where they react with the first precursor to deposit a layer of the desired film. Krypton is preferably used as the ion generating feed gas because the metastable states of krypton lead to an efficient dissociation of oxygen into oxygen radicals when compared with other inert gases.

An atomic layer deposition system and method utilizing radicals generated from a high-density mixed plasma for deposition is disclosed. A high-quality oxide or oxynitride can be deposited by exposing a substrate to a first precursor which is adsorbed onto the substrate during a first phase of one deposition cycle. After purging the deposition chamber, the substrate is exposed to a second precursor which includes oxygen radicals and krypton ions formed from the high-density mixed plasma. The ions and radicals are formed by introducing a radical generating feed gas (e.g., O2) and an ion generating feed gas into a plasma chamber and exciting the gases to form the high-density mixed plasma. The radicals and ions are then introduced to the substrate where they react with the first precursor to deposit a layer of the desired film. Krypton is preferably used as the ion generating feed gas because the metastable states of krypton lead to an efficient dissociation of oxygen into oxygen radicals when compared with other inert gases.

System and methods for flash heating of materials deposited using atomic layer deposition techniques are disclosed. By flash heating the surface of the deposited material after each or every few deposition cycles, contaminants such as un-reacted precursors and byproducts can be released from the deposited material. A higher quality material is deposited by reducing the incorporation of impurities. A flash heating source is capable of quickly raising the temperature of the surface of a deposited material without substantially raising the temperature of the bulk of the substrate on which the material is being deposited. Because the temperature of the bulk of the substrate is not significantly raised, the bulk acts like a heat sink to aid in cooling the surface after flash heating. In this manner, processing times are not significantly increased in order to allow the surface temperature to reach a suitably low temperature for deposition.

Structures, devices and methods are provided for creating enhanced back barriers that improve the off-state breakdown and blocking characteristics in aluminum gallium nitride AlGaN / GaN high electron mobility transistors (HEMTs). In one aspect, selective fluorine ion implantation is employed when developing HEMTs to create the enhanced back barrier structures. By creating higher energy barriers at the back of the two-dimensional electron gas channel in the unintentionally doped GaN buffer, higher off-state breakdown voltage is advantageously provided and blocking capability is enhanced, while allowing for convenient and cost-effective post-epitaxial growth fabrication. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.

An integrated circuit structure includes a first fixed magnetic element; a second fixed magnetic element; and a composite free magnetic element between the first and the second fixed magnetic elements. The composite free magnetic element includes a first free layer and a second free layer.

System and methods for flash heating of materials deposited using atomic layer deposition techniques are disclosed. By flash heating the surface of the deposited material after each or every few deposition cycles, contaminants such as un-reacted precursors and byproducts can be released from the deposited material. A higher quality material is deposited by reducing the incorporation of impurities. A flash heating source is capable of quickly raising the temperature of the surface of a deposited material without substantially raising the temperature of the bulk of the substrate on which the material is being deposited. Because the temperature of the bulk of the substrate is not significantly raised, the bulk acts like a heat sink to aid in cooling the surface after flash heating. In this manner, processing times are not significantly increased in order to allow the surface temperature to reach a suitably low temperature for deposition.

In one aspect of the invention, an organic light emitting diode device has a substrate, a cathode formed on the substrate, an anode spaced-apart from the cathode, a plurality of electroluminescent units stacked between the cathode and the anode, and a plurality of charge generation layers, each of which is formed between two adjacent electroluminescent units. Each electroluminescent unit has an electron-transport layer, an emission layer formed on the electron-transport layer, and a hole-transport layer formed on the emission layer. The electron-transport layer of the first electroluminescent unit is formed on the cathode, defining a first energy barrier, and the anode is formed on the hole-transport layer of the last electroluminescent unit, defining a second energy barrier. The first energy barrier is higher than the second energy barrier. The first electroluminescent unit has a lifetime longer than that of each of the rest electroluminescent units.

The invention relates to a silicon-containing lithium ion battery with high energy density. The lithium ion battery comprises a positive electrode, a silicon-containing negative electrode, a fluorine-containing electrolyte, a diaphragm, electrode lugs and a packaging material. The silicon-containing negative electrode takes a silicon-based material as a whole or a part of electrochemical active substances. The electrolyte contains lithium salt, a non-aqueous organic solvent capable of dissolving the lithium salt, an SEI film-forming additive and hydrofluoroether. The solubility of the lithiumsalt in the non-aqueous organic solvent capable of dissolving the lithium salt is higher than 2 mol / L. The solubility of the lithium salt in the hydrofluoroether is lower than 0.3 mol / L, wherein the non-aqueous organic solvent capable of dissolving the lithium salt is mutually dissolved with the hydrofluoroether, the non-aqueous organic solvent capable of dissolving the lithium salt and the liquidSEI film-forming additive are mutually dissolved, so the solid SEI film-forming additive can be dissolved. The silicon-containing lithium ion battery has the advantages of high energy density, long cycle life, good rate capability, high safety performance, difficulty in expansion and deformation and the like.

The invention provides an electrolyte. The electrolyte comprises a solvent and lithium salt, and the concentration of the lithium salt is 3.1-5.0 mol / L. When the high-concentration electrolyte is used, a complexation state of lithium ions and a solvent is changed from complexation of 3-4 solvent molecules by each lithium ion to complexation of 1-2 solvent molecules by one lithium ion, complexationforce of the lithium ions and the solvent molecules are strong, the energy barrier for solvent reduction is increased, and work voltage is risen. The above high-concentration electrolyte is partiallyreduced on a surface of a cathode, a layer of SEI is formed which is better than that formed through reduction of current electrolytes, so that further decomposition of the electrolyte can be inhibited, thin thickness and good toughness can be kept during a cycle process, accordingly, interface impedance and lithium ion transport number cannot be increased with increase of cycle number, and highcoulombic efficiency and specific capacity can be kept at a battery cycle late period.

The invention provides a graphene-based material with anti-icing and deicing functions, and a preparation method of the material, in particular to a three-dimensional network structure graphene-basedmaterial with anti-icing and deicing functions, and a preparation method of the material, aiming at solving the problem that the existing deicing material is slow in deicing speed. The preparation method comprises the steps of 1, preparing graphene oxide; 2, preparing graphene oxide Pickering emulsion; 3, carrying out suction filtration on the graphene oxide Pickering emulsion by using a polytetrafluoroethylene filter membrane, then drying the polytetrafluoroethylene filter membrane, reducing the dried membrane in saturated steam of hydrogen iodide, and then carrying out vacuum drying. The graphene-based material is low in density and rapid in temperature rise, and has super-hydrophobic performance. The preparation method provided by the invention is suitable for preparing the three-dimensional network structure graphene-based material with the anti-icing and deicing functions.

The invention relates to a single molecular magnet and a preparation method of the single molecular magnet, namely to a single molecular magnet Dy2 (salen) 2 (tta) 4 (OAc) 2 and the preparation method of the single molecular magnet. The invention aims to solve the problems that the synthetic yield of rare earth complex single molecular magnet is relatively low, the synthetic method of the complex is complex, the batch production cannot be carried out and the like, which are faced at present. The molecular formula of the single molecular magnet Dy2 (salen) 2 (tta) 4 (OAc) 2 is C84H56Dy2F12N4O16S4, and the crystal system is a triclinic system. The preparation method comprises the following steps: Carrying out heating reflux on a mixed solution C, then cooling to the room temperature, and filtering to obtain a solution D; dispersing a mixed solution E into the solution D in a solution dispersal mode, and standing to obtain the single molecular magnet Dy2 (salen) 2 (tta) 4 (OAc) 2. The method is used for obtaining the single molecular magnet Dy2 (salen) 2 (tta) 4 (OAc) 2.

It comprises a method of exploring the flexibility of macromolecules, where an available ensemble of structures of a receptor, such as one coming from a molecular dynamics trajectory or a set of experimentally derived structures, is used to generate an ensemble of structures for a closely related receptor, such as a receptor mutant, a receptor with a series of post-translational modifications, or one that is non-covalently bound to a second molecule. In this way, new ensembles of the pertubed receptor can be accessed without the need to explicitely simulate the new system. The method allows the study of structure and flexibility of derivatives and relatives of a receptor in a computer efficient manner, and therefore has applications in the rational-drug design field, especially in virtual screening. It also comprises a computer program product for causing a computer to perform the method, as well as a system of molecular modeling comprising computer means for carrying out each of the steps of the method.

The invention relates to a magnetic storage unit and a data writing method. The method comprises the following steps: manufacturing a magnetic tunnel junction on an antiferromagnetic metal strip-shaped film; plating a first bottom end electrode and a second bottom end electrode at the two ends of the antiferromagnetic metal strip-shaped thin film respectively; the magnetic tunnel junction comprising a first ferromagnetic metal layer, a first oxide layer, a second ferromagnetic metal layer, a first synthetic antiferromagnetic layer and a top electrode from bottom to top. The magnetic tunnel junction has perpendicular magnetic anisotropy. The magnetic tunnel junction has at least two resistance states. Two effects of voltage regulation magnetic anisotropy and spin orbital moment are relied on, and the voltage regulation magnetic anisotropy effect can be generated by applying a bias voltage to a top electrode of a magnetic tunnel junction with perpendicular magnetic anisotropy. The spin orbital moment effect can be generated by applying currents to the two ends of the antiferromagnetic metal strip-shaped thin film, an external magnetic field does not need to be applied in the data writing process, and the data writing performance of the magnetic storage unit is optimized.

A semiconductor memory device having an alloy gate electrode layer and method of manufacturing the same are provided. The semiconductor memory device may include a semiconductor substrate having a first impurity region and a second impurity region. The semiconductor memory device may include a gate structure formed on the semiconductor substrate and contacting the first and second impurity regions. The gate structure may include an alloy gate electrode layer formed of a first metal and a second metal. The first metal may be a noble metal. The second metal may include at least one of aluminum (Al) and titanium (Ti), gallium (Ga), indium (In), tin (Sb), thallium (Tl), bismuth (Bi) and lead (Pb).

A semiconductor device has: a gate insulator film of a transistor formed in a predetermined region on a region of a first conductivity type; a gate electrode of the transistor formed on the gate insulator film; a diffusion layer of a second conductivity type formed on both sides of the gate insulator film on the region of the first conductivity type; and a diffusion layer of the first conductivity type formed on the region of the first conductivity type so as to surround the gate insulator film and the diffusion layer of the second conductivity type. The diffusion layer of the first conductivity type has a higher impurity concentration than the region of the first conductivity type. In such a semiconductor device, the diffusion layer of the first conductivity type is formed so as to be separated from the gate insulator film. Consequently, it is the region of the first conductivity type having a lower concentration than the diffusion layer of the first conductivity type that forms a PN junction with the inversion layer in the channel region formed when the transistor is on (the inversion layer of the second conductivity type below the gate insulator film), so that the energy barrier of the PN junction is higher than that of the conventional PN junction of the diffusion layer of the first conductivity type and the inversion layer of the second conductivity type. As a result, leakage current generation is suppressed.

The invention relates to OMMT modified anticondensation ice emulsified asphalt and a preparation method thereof, and relates to the technical field of preparation of road maintenance materials. The method comprises the following steps: performing organification treatment on Na-MMT to obtain organic montmorillonite, preparing a mixed soap liquid by using OMMT and an emulsifying agent as raw materials, and adding the mixed soap liquid into matrix asphalt to prepare the modified emulsified asphalt having excellent anticondensation ice performance. The method provided by the invention has the beneficial effects that the mixed soap liquid prepared from the organic montmorillonite and the emulsifying agent is used as a modifying agent of the asphalt, the contact angle of the obtained emulsifiedasphalt is greatly improved relative to the matrix asphalt and ordinary emulsified asphalt, so that bonding strength between frozen water and a road layer is reduced, and the anticondensation ice performance of the emulsified asphalt is improved; the storage stability of the emulsified asphalt is improved, and the anti-aging property is improved; fog seal layer treatment is performed on a road surface by the emulsified asphalt, and the method has the advantages of high efficiency, no consumption, simple construction, relatively-low costs and no pollution.

The invention provides a silicon-oxygen negative electrode material and a preparation method thereof, a negative electrode plate and a secondary battery. The preparation method comprises the steps of S1, adding a silicon-oxygen material into an alkaline solution with the pH value of 8-9 for dispersion, adding dopamine hydrochloride for continuous dispersion, washing, centrifuging and drying to obtain silicon-oxygen dopamine nanoparticles, and sintering the silicon-oxygen dopamine nanoparticles to obtain silicon-oxygen carbon nanoparticles; S2, mixing and stirring the silicon-oxygen carbon nanoparticles and a titanium source, heating, cooling, washing, centrifuging and drying to obtain titanium-silicon-oxygen carbon nanoparticles; and S3, dissolving the titanium-silicon-oxygen carbon nanoparticles in water, carrying out ultrasonic dispersion, then adding dopamine hydrochloride, continuing to dissolve and disperse, then adding a strongly alkaline substance, stirring, washing, centrifuging, and drying to obtain the dopamine modified silicon-oxygen negative electrode material. Compared with the prior art, the obtained negative electrode material has the advantages that the problem of volume expansion of the current silicon material in the charge-discharge process is solved, the structural stability of the silicon material in the charge-discharge process is ensured, and various properties of the battery are improved.

The invention provides a biosurfactant and a preparation method thereof, and belongs to the technical field of surfactant preparation. The biosurfactant is obtained by a chelation reaction of the following raw materials: a proteolysis product, a protein aqueous dispersion and a multivalent metal ion aqueous solution. According to the invention, by compounding a polypeptide product (proteolysis product) obtained after protein is hydrolyzed by enzyme with protein and multivalent metal ions, the performance of the surfactant can be obviously improved by utilizing the synergistic effect of two or more components with different molecular sizes at an interface; on the basis of controlling the hydrolysis degree of protein and the concentration of enzymatic hydrolysate, protein and multivalent metal ions, the controllable adjustment of the performance of the surfactant can be realized; and a corresponding surfactant formula can be quickly developed according to specific application requirements.

An optical modulator comprises a first waveguide layer and a barrier layer, and a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer.

The present invention provides a Group III nitride semiconductor light-emitting device in which electrons and holes are suppressed from being captured by threading dislocation, and a production method therefor. The light-emitting device comprises an n-type contact layer, an n-side electrostatic breakdown preventing layer, an n-side superlattice layer, a light-emitting layer, a p-type cladding layer, a p-type contact layer, a transparent electrode, an n-electrode, and a p-electrode. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. The n-side electrostatic breakdown preventing layer has an n-type AlGaN layer. The n-type AlGaN layer includes starting points of the pits.

The invention discloses a coherent nanophase reinforced medium-entropy alloy with excellent thermal stability and a preparation method, the coherent nanophase reinforced medium-entropy alloy comprises 30 at.%-33 at.% of Ni, 30 at.%-33 at.% of Co, 30 at.%-33 at.% of Cr, 5 at.%-7 at.% of Al and 1.0 at.%-3.0 at.% of Ta, gamma'phase is added into the NiCoCr medium-entropy alloy with excellent mechanical properties to form elements Al and Ta, and then a nanophase is introduced into a NiCoCr alloy matrix through an aging process, so that the thermal stability of the alloy is improved. A gamma + gamma'structure similar to a high-temperature alloy is constructed, and meanwhile, the strength of the NiCoCr alloy is also greatly improved through the nano precipitation strengthening effect; the alloy not only has the characteristic of high toughness, but also has excellent structure thermal stability, so that the alloy has great competitive advantages in alloys with similar structures, has great engineering application prospects in the high-temperature field, and is expected to become a next-generation high-temperature structural material.

In a graphene-semiconductor heterojunction photodetector and a method of manufacturing the same according to the present inventive concept, a source electrode and a test electrode are formed to face each other on a graphene layer, and a drain electrode is formed in a direction perpendicular to a central region portion of the graphene layer, so that the drain electrode may be physically separated from the graphene layer. Further, charges formed at the central region portion of the graphene layer are transmitted to the drain electrode through a substrate, so that high photosensitivity may be secured, and a high output voltage may be secured for the applied light. Accordingly, the drain electrode is formed at a side surface of the graphene layer, so that the size of the drain electrode may be easily controlled, and a high output voltage may be obtained.

The invention discloses a catalyst for synthesizing diphenyl carbonate. The catalyst comprises a molecular sieve and a loaded active component, the molecular sieve is an alkali metal modified microporous molecular sieve, and the active component is binary mixed metal oxide AO / B<c>O<d>, wherein A is selected from Sn, Ga or Zn, B is selected from Zr, Cr or La, and a, b, c and d are stoichiometric numbers. Due to the addition of a lithium additive, the energy barrier in the side reaction process is remarkably improved, and the reaction speed of the side reaction is reduced. The tin oxide and other active components obviously lower the energy barrier in the main reaction process, and enhance the reaction speed of the main reaction. The catalyst provided by the invention has very high catalytic activity, effectively realizes diphenyl carbonate synthesis reaction, inhibits the occurrence of ether side reaction, and reduces the energy consumption of the production process.

The invention discloses nanometer heat insulating coating for buildings, and relates to the field of coating. The nanometer heat insulating coating includes, by mass, 10-20 parts of deionized water, 20-40 parts of microcrystal heat insulating nanometer powder, 3-5 parts of modified potassium hexatitanate whisker pulp, 10-20 parts of an inorganic filler, 15-25 parts of silicone resin emulsion, 5-9parts of near-infrared reflective powder, 5-15 parts of silicone acrylic emulsion, 4-6 parts of cold pigment and 2-3 parts of an auxiliary agent. The coating includes the microcrystal heat insulatingnanometer powder and the near-infrared reflective powder, thus effectively improving heat insulation performance of the coating and reducing loss of energy of buildings. In addition, a preparation method of the coating is simple and suitable for large-scale production.

The invention discloses a corrosion-resistant aluminum-carbon composite material and a preparation method thereof, and relates to the technical field of composite material preparation, the preparation method comprises the following steps: step S1: in an argon protection atmosphere, mixing graphene, aluminum powder and a process control agent, and carrying out ball milling, heating and heat preservation to obtain aluminum-carbon composite powder; and S2, carrying out rotary extrusion on the aluminum-carbon composite powder through severe plastic deformation, and carrying out load holding, so as to obtain the corrosion-resistant aluminum-carbon composite material. According to the preparation method, super-homogeneous distribution of graphene and ultra-fine grain of the structure are achieved through ball milling and severe plastic deformation, the bottleneck of the antagonism relation between obdurability and corrosion resistance of the aluminum-carbon composite material is broken through, the material in the preparation method is free of the melting-solidification process, energy needed by sintering is remarkably reduced, the process difficulty is reduced, and the preparation method is suitable for industrial production. The method is a green manufacturing technology with energy-saving and environment-friendly technical characteristics.

The invention relates to the technical field of nano material dispersion, in particular to a preparation method of a stably dispersed nano 8YSZ aqueous phase suspension. The preparation method comprises the following steps: weighing nano 8YSZ powder, adding deionized water, and uniformly stirring to obtain a suspension initial solution with the solid-phase mass fraction of 10-30%; and adding a dispersing agent into the suspension initial solution, and carrying out dispersion treatment to obtain a suspension. By adding the dispersing agent, a double mechanism of electrostatic stability and steric hindrance is formed in the suspension, so that the dispersion of nano particles is realized. The electrostatic stabilization mechanism is that a double-electric-layer structure is formed on the surfaces of the particles, and the same charges on the surfaces of the particles repel each other to realize a dispersion effect. According to the steric hindrance mechanism, the dispersing agent is adsorbed to the surfaces of nano particles, polymers on the adjacent particles repel each other due to the volume effect, the energy potential barrier which must be overcome by nano particle aggregation is improved, and therefore dispersion of the particles in suspension liquid is achieved.

The present invention provides a Group III nitride semiconductor light-emitting device in which electrons and holes are suppressed from being captured by threading dislocation, and a production method therefor. The light-emitting device comprises an n-type contact layer, an n-side electrostatic breakdown preventing layer, an n-side superlattice layer, a light-emitting layer, a p-type cladding layer, a p-type contact layer, a transparent electrode, an n-electrode, and a p-electrode. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. The n-side electrostatic breakdown preventing layer has an n-type AlGaN layer. The n-type AlGaN layer includes starting points of the pits.