Magnetic memory cell and data writing method

Abstract

The invention relates to a magnetic storage unit and a data writing method. The method comprises the following steps: manufacturing a magnetic tunnel junction on an antiferromagnetic metal strip-shaped film; plating a first bottom end electrode and a second bottom end electrode at the two ends of the antiferromagnetic metal strip-shaped thin film respectively; the magnetic tunnel junction comprising a first ferromagnetic metal layer, a first oxide layer, a second ferromagnetic metal layer, a first synthetic antiferromagnetic layer and a top electrode from bottom to top. The magnetic tunnel junction has perpendicular magnetic anisotropy. The magnetic tunnel junction has at least two resistance states. Two effects of voltage regulation magnetic anisotropy and spin orbital moment are relied on, and the voltage regulation magnetic anisotropy effect can be generated by applying a bias voltage to a top electrode of a magnetic tunnel junction with perpendicular magnetic anisotropy. The spin orbital moment effect can be generated by applying currents to the two ends of the antiferromagnetic metal strip-shaped thin film, an external magnetic field does not need to be applied in the data writing process, and the data writing performance of the magnetic storage unit is optimized.

Description

technical field [0001] The invention relates to the technical field of nonvolatile storage and logic, in particular to a magnetic storage unit and a data writing method. Background technique [0002] In recent years, the emerging non-volatile memory has received extensive attention from academia and industry, and is considered to be one of the key technologies that can break through the power consumption bottleneck of traditional integrated circuits at deep submicron levels. Magnetic Random Access Memory (MRAM), as an emerging non-volatile memory, is expected to become the next generation of general-purpose memory due to its advantages of fast read and write speed, low energy consumption, long life and good process compatibility. [0003] Magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) is the basic storage unit of MRAM, mainly composed of two ferromagnetic layers and a tunneling barrier layer sandwiched between them. One of the ferromagnetic layers has a fixed magn...

AI Technical Summary

Problems solved by technology

Although this writing method can solve the problem that the previous generation of MRAM uses a magnetic field to write data information, it also has some defects: (1) The data writing process needs to go through an incubation process, resulting in a large writing delay; ( 2) Read and write operations go through the same path, which is likely to cause problems such as read interference and tunneling barrier layer breakdown; (3) The write current is large, resulting in large write energy consumption

However, SOT-PMA-MTJ using AFM still has some problems in data information writing: (1) SOT write current is still relatively large, resulting in large write energy consumption; (2) due to the exchange bias generated by AFM The field is relatively small, when the SOT write current is applied, the magnetization state reversal of the PMA-MTJ free layer is incomplete, which will lead to a high data information write error rate

However, there are still some problems in the data information writing of SOT-PMA-MTJ using AFM: (1) SOT write current is relatively large, resulting in large write energy consumption; (2) AFM thin film and ferromagnetic metal thin film interface The generated exchange bias field is relatively small, which leads to the incomplete reversal of the magnetization state of the free layer of PMA-MTJ, which leads to a higher data information writing error rate

[0007] (1) The spin-orbit moment write current is relatively large, which will lead to large write energy consumption;

[0008] (2) When the spin-orbit moment effect is used to write data information, since the exchange bias field generated at the interface between the antiferromagnetic metal film and the ferromagnetic metal film is relatively small, the freedom of the magnetic tunnel junction with perpendicular magnetic anisotropy The magnetization state flipping of the layer is incomplete, which will lead to a high data information writing error rate

Images