525 results about "Magnetic tunnelling" patented technology

The invention provides a physical unclonable function magnetic device and an application method thereof, the magnetic device comprises a plurality of magnetic storage units arranged in an array and a control circuit, and each magnetic storage unit comprises a spin orbit moment layer and at least one magnetic tunnel junction arranged on the spin orbit moment layer; and the control circuit is used for applying a composite reconstruction signal with oscillation change to the magnetic memory units, and forming a superposed physical field with oscillation change at the magnetic memory units so as to enable the resistance state of the magnetic tunnel junction to generate oscillation change to realize PUF reconstruction of the plurality of magnetic memory units arranged in an array. In order to solve the problems of limited CRP generated by the PUF circuit and low resource utilization rate, the physical field with oscillation change is formed through the composite reconstruction signal, so that the PUF of the magnetic tunnel junction of the SOT-MRAM generates random oscillation change, the PUF of the magnetic device can be reconstructed, the reconstructed magnetic device can generate new CRP, and the resource utilization rate is improved.

The invention relates to a semiconductor structure, a preparation method thereof and a magnetic tunnel junction sensor. The semiconductor structure comprises a substrate, and a buffer layer, a solid magnetic layer, a tunnel barrier layer, a free layer and a protective layer which are located on the substrate. The solid magnetic layer comprises an antiferromagnetic pinning layer and a reference layer which are stacked, the antiferromagnetic pinning layer is located on the top surface of the buffer layer, and the magnetization direction of the reference layer is pinned by the antiferromagnetic pinning layer; the tunnel barrier layer is located on the top surface of the reference layer; the free layer is located on the top surface of the tunnel barrier layer, the thickness of the free layer in the direction perpendicular to the substrate continuously and smoothly changes in the preset direction, the thickness value distribution of the free layer conforms to a preset gradient function, and a preset included angle is formed between the preset direction and the pinned magnetization direction of the reference layer; the protective layer is on the top surface of the free layer. Multi-range or continuous wide-range detection can be realized in a single-chip semiconductor device, and high sensitivity is realized.

The invention discloses a 23T4M anti-radiation TCAM storage unit circuit which comprises a pre-charging module, an RH reading circuit module, a programmable logic module, a reconfigurable magnetic tunnel junction storage module, a discharging module and an output module. In the RH reading circuit module, the grid electrode of a transistor N7 is connected with the drain electrode of a transistor N8, the grid electrode of the transistor N8 is connected with the drain electrode of the transistor N7, a cross coupling structure is formed, a node S0 and a node S1 are controlled by a node Q and a node QB, meanwhile, the node S0 and the node S1 control the charging and discharging paths of the node Q and the node QB respectively, and after any node is overturned by high-energy particles, the charging and discharging paths of the node Q and the node QB are controlled by the node S0 and the node S1. All the nodes are maintained or charged to recover to the original logic level. According to the method, data upset at a single sensitive node can be completely resisted, and meanwhile, the search error rate of the TCAM is improved.

The invention discloses a three-dimensional transient electromagnetic detection method for tunnel advanced geological forecast. The transient electromagnetic exploration method has the advantages of low construction cost, high safety coefficient, reliable detection result and the like. The method comprises the following steps: installing a plurality of loop sources in an area nearby a tunnel face in a set mode, and obtaining stratum information data of the area nearby the tunnel face; and analyzing the data by adopting a three-dimensional transient electromagnetic forward and reverse modeling method to obtain related information of the unfavorable geologic body in front of the tunnel face. According to the method, the efficiency and the accuracy of transient electromagnetic tunnel advanced prediction are improved.

The invention provides an ion beam etching system with an etching rate in-situ monitoring function and an etching method, the ion beam etching system is provided with an objective table which can deflect by 90 degrees and an electrical test detection element which can move close to or far away from the objective table, and by the etching method, an ion source is not closed, a sample is not taken out, and the etching rate can be accurately measured. The etching depth can be accurately monitored by measuring the surface resistance of the sample in situ, the etching rate can be reduced in time, and the method is more suitable for the tape-out process. According to the ion beam etching system and the etching method, sputter spectrum monitoring is replaced by sample surface resistance detection, so that the test sensitivity is higher, the system cost is lower, the etching precision in magnetic tunnel junction preparation is greatly improved, the sample is prevented from being excessively etched, the thickness of a sample layer can be kept consistent, the resistance distribution is uniform, and the quality of the magnetic tunnel junction is improved. And the high success rate preparation of the SOT-MRAM memory with large capacity and small size is realized.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

A magnetic tunnel junction element and a memory device including the same are provided. The magnetic tunnel junction element includes: a pinned layer and a free layer facing each other; a buffer layer on the pinning layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, in which the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re, or Ta, and the auxiliary layer includes W, Mo, or Ta.

A method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device is disclosed. The MTJ device is switchable between a first resistance state and a second resistance state. A first threshold voltage for switching the MTJ device from the second resistance state to the first resistance state is lower than a second threshold voltage for switching the MTJ device from the first resistance state to the second resistance state. The method includes applying a first voltage pulse across the MTJ device with an amplitude having an absolute value equal to or greater than the first threshold voltage and lower than the second threshold voltage, thereby setting the MTJ device to the first resistance state regardless of whether the MTJ device initially is in the first or second resistance state.

The invention relates to the technical field of medicine cold chain logistics information, in particular to a medical intravenous distribution code scanning logistics tracking method which comprises the following steps: attaching a self-energized label on the outer side of a preparation, reading magnetic tunnel junction physical fingerprints and nanocrystalline point-deoxyribonucleic acid information to generate a reference hash value, and collecting humiture recursion environment hash chains at fixed intervals; generating a challenge by using a satellite high-entropy random number during handover, obtaining a second fingerprint, constructing a zero-knowledge event proof in combination with a reference hash value and an environment chain, and writing a plurality of proof into a distributed account book after dynamic planning aggregation; and synchronously capturing wireless channel state information to construct a dynamic graph, and outputting a next node instruction and a risk score by a graph neural network and near-end strategy optimization. According to the method, battery-free anti-cloning and anti-tampering cold chain monitoring and network disconnection path decision are realized, the chain cost is low, and the robustness is high.

A magnetic tunneling junction (MTJ) device structure and the method of constructing such device are disclosed. Also disclosed are methods of using the device for spin-dependent transport characterization through biomolecules for structure and dynamic function analysis in physiological environments.

The embodiment of the invention provides a physical unclonable function generator and a true random number generator. The physical unclonable function generator comprises a storage array and a control unit, a storage unit in the storage array comprises a magnetic storage device, and the magnetic storage device comprises a magnetic tunnel junction; the control unit is used for controlling the application of a magnetic field along a target direction to the storage array, and reading the resistance state of the storage unit to generate a physical unclonable function after the application of the magnetic field is stopped; wherein the target direction is perpendicular to or approximately perpendicular to the magnetic moment direction of the free layer in the magnetic tunnel junction in the in-plane direction, and the randomness and uniformity of the physical unclonable function are improved.

Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM) device. The MRAM device includes a reference layer; a tunnel barrier layer next to the reference layer; and a free layer next to the tunnel barrier layer, where the free layer includes a crystalline AIMnGe layer in a C38 structure formed on a magnetic seed layer, and the magnetic seed layer is a crystallized MnCo2Si layer or a crystallized MnCo2Ge layer having a cubic Heusler structure with a (001) texture. A method of forming the MRAM device is also provided.

A magnetoresistive memory cell includes a first electrode; a second electrode; and a layer stack located between the first electrode and the second electrode and comprising, from one end to another, a first reference layer, a first tunnel barrier layer, a free layer, a second tunnel barrier layer, and a second reference layer. A first one of the first reference layer and the second reference layer comprises a positive spin polarization material. A second one of the first reference layer and the second reference layer comprises a negative spin polarization material. A magnetization direction of the second reference layer is parallel to a magnetization direction of the first reference layer.

To provide a new multilayer thin film exhibiting a tunnel magnetoresistance effect.SOLUTION: The present invention is a multilayer thin film having an insulating layer and a magnetic layer sandwiching the insulating layer. At least one of the magnetic layers is made of a Co-based alloy containing Al and / or Ga. For example, Co is contained in an amount of 58.5 to 63 at% with respect to the entire Co-based alloy. The Co-based alloy constituting a magnetic layer may be a β phase. The insulating layer is, for example, MgO or MgAl2O4. The magnetic layer on the other side of the insulating layer may be CoFeB (alloy) in addition to CoAl. Each layer is formed by sputtering, and planarization, crystallization, and the like are performed by heat treatment. A magnetic tunnel junction (MTJ) having the multilayer thin film of the present invention exhibits a high magnetoresistance change ratio (MR ratio), and can be applied to a next-generation magnetoresistance memory (MRAM) or the like.SELECTED DRAWING: Figure 3

A semiconductor device and methods for forming the device are disclosed. The semiconductor device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. The bottom electrode and / or the top electrode include doped SiGeSn.

The invention provides a magnetic storage element and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the problem of low overturning efficiency of a free layer in the prior art. The magnetic storage element comprises a substrate, a spacing layer, a spin orbit moment layer and a magnetic tunnel junction which are sequentially stacked from bottom to top, and a first ferromagnetic structure and a second ferromagnetic structure which are independently arranged on two side walls of the spacing layer, the first ferromagnetic layer in the first ferromagnetic structure and the second ferromagnetic layer in the second ferromagnetic structure are opposite in magnetic moment direction, so that stray fields in opposite directions can be generated; the top surfaces of the first ferromagnetic structure and the second ferromagnetic structure are not higher than the top surface of the spin orbit moment layer and are electrically connected with the spin orbit moment layer to form a write-in path, and when write-in current flows through the first ferromagnetic structure or the second ferromagnetic structure, a stray field generated by the ferromagnetic structure through which the write-in current flows is weakened; a stray field generated by the ferromagnetic structure through which the write-in current does not flow assists the free layer in overturning, and the overturning efficiency of the free layer can be improved.

The invention provides a magnetic storage unit and device based on signal time delay. The unit comprises a first spin orbit moment layer and a first magnetic tunnel junction arranged on the first spin orbit moment layer. The distances between the first magnetic tunnel junction and the two ends of the first spin orbit moment layer are respectively a first distance and a second distance, and the first distance and the second distance are not equal; respectively inputting a first pulse signal and a second pulse signal from two ends of the first spin orbit moment layer along the first distance and the second distance; and the first pulse signal and the second pulse signal form a first write-in spin transfer torque current at the first magnetic tunnel junction due to signal time delay, so that the magnetic moment of a free layer of the first magnetic tunnel junction is subjected to deterministic overturning under the action of the first write-in spin transfer torque current. Deterministic writing of the magnetic tunnel junction can be realized without an additional auxiliary magnetic field, the device structure is simplified, and the area and power consumption overhead are reduced.

A magnetic memory device includes a substrate that includes a cell region and a boundary region adjacent to the cell region, a data storage structure that includes a magnetic tunnel junction pattern and is on the cell region, and a dummy pattern structure on the boundary region. The dummy pattern structure is spaced apart from the data storage structure in a first direction that is parallel to an upper surface of the substrate. The dummy pattern structure is parallel to the upper surface of the substrate and extends linearly in a second direction that intersects the first direction.

The invention provides a magnetoresistive random access memory structure and a preparation method thereof. The method comprises the following steps: providing a substrate; forming a magnetic tunnel junction film layer on the substrate; forming a first dielectric layer on the magnetic tunnel junction film layer; etching the two ends of the first dielectric layer in the first direction so as to enable the two opposite ends of the magnetic tunnel junction film layer in the first direction to extend out of the etched first dielectric layer; forming a metal layer on the magnetic tunnel junction film layer, wherein the metal layer wraps the etched first dielectric layer; and etching the metal layer to form top electrodes on two opposite sides of the first dielectric layer along the first direction. According to the invention, the yield of the MRAM can be improved.

The invention provides a semiconductor structure, which comprises a plurality of magnetic tunnel junction (MTJ) elements. Seen from a top view, the MTJ elements are arranged in an array, at least one second contact structure is located in the array arranged by the MTJ elements, and at least one first mask layer covers a top surface and two sidewalls of each MTJ element, when seen from a cross-sectional view, a sidewall of the first mask layer is aligned with a sidewall of a second metal layer which is disposed below the second contact structure.

A semiconductor device includes a first substrate, a transistor, an interconnection structure, a first bonding pad, a magnetic tunnel junction (MTJ) structure, a conductive line and a second substrate. The transistor is formed on the first substrate. The interconnection structure is formed on the first substrate and electrically connected to the transistor. The first bonding pad is formed on and electrically connected to the interconnection structure. The MTJ structure is disposed on and electrically connected to the first bonding pad, wherein the MTJ structure comprises a free layer, a tunnel barrier layer, a synthetic antiferromagnet layer sequentially stacked up over the first bonding pad. The conductive line is disposed on the MTJ structure. The second substrate is disposed on the conductive line.

The present invention provides a magnetic storage device that can suppress the degradation of the characteristics of a magnetoresistive element, and a method for manufacturing a magnetic storage device. [Solution] A magnetic memory device 1 of one embodiment includes a first wiring 21 extending in a first direction X, a second wiring 28 extending in a second direction Y intersecting the first direction and provided above the first wiring, a first memory cell provided between the first wiring and the second wiring, a third wiring 21 extending in the first direction and provided above the second wiring, and a second memory cell provided between the second wiring and the third wiring. The first memory cell includes a first selector body 24, a first conductor 26, and an MTJ body 27 provided on the upper surface of the first conductor. The second memory cell includes a second selector body 24, a second conductor 26, and a second MTJ body 27 provided on the upper surface of the second conductor. The upper surface of the first conductor is flattened.

Provided are a reconfigurable neuron device based on ion gate regulation and a method of preparing the same. The device includes: a synthetic antiferromagnetic layer, a metal oxide layer, an ionic liquid layer and a top electrode layer which are sequentially stacked from bottom to top. A left boundary antiferromagnetic layer and a right boundary antiferromagnetic layer having opposite magnetization directions are provided on two opposite edges of a bottom end of the synthetic antiferromagnetic layer, and a magnetic tunnel junction configured to output a spike signal is further provided in a middle portion of the bottom end of the synthetic antiferromagnetic layer. The metal oxide layer, the ionic liquid layer and the top electrode layer constitute an ion gate, the ionic liquid layer includes a positive ion and a negative ion.

In a method of manufacturing a magnetic memory device, a temporary shift cancel layer including X metal atoms and Y metal atoms as free atoms may be formed. A magnetic tunnel junction layer may be formed on the temporary shift cancel layer. The magnetic tunnel junction layer and the temporary shift cancel layer may be etched to form a magnetic tunnel junction pattern and a temporary shift cancel pattern. The Y metal atoms redeposited between the magnetic tunnel junction pattern and the temporary shift cancel pattern may be oxidized to form metal oxide. The Y metal atoms of the temporary shift cancel pattern may be substituted with Z metal atoms to form a shift cancel pattern. The Y metal atoms may have higher oxidizing than the Z metal atoms. The Z metal atoms may have a higher reduction potential than the Y metal atoms.

The invention provides a preparation method of a magnetic storage unit, and the method comprises the steps: providing a substrate which comprises a magnetic storage unit bottom electrode; preparing a magnetic tunnel junction lamination layer on the bottom electrode, and obtaining more than one actual parameter of the magnetic tunnel junction lamination layer; comparing the actual parameter with a corresponding first preset parameter, and determining a comparison result; determining process parameters of a reference resistor corresponding to the magnetic tunnel junction lamination according to the comparison result; and forming the reference resistor according to the determined process parameters. According to the preparation method of the magnetic storage unit, the process parameters of the reference resistor needing to be prepared can be determined through the actual parameters after the magnetic tunnel lamination is prepared, so that the resistance value of the reference resistor is effectively controlled, and a sufficient read-out window is provided for the magnetic tunnel junction unit.

A magnetic memory device includes a substrate, a base insulating film on the substrate, a magnetic tunnel junction element including first and second magnetic patterns and a tunnel barrier pattern therebetween on the base insulating film, an upper electrode pattern on an upper face of the magnetic tunnel junction element, a capping structure including a first to third capping films sequentially stacked on a side face of the magnetic tunnel junction element, and a conductive line on both the upper electrode pattern and the capping structure and connected to the upper electrode pattern. An uppermost end of the second capping film is higher than an uppermost end of the first capping film, an uppermost end of the third capping film is lower than the uppermost end of the first capping film, and the second capping film includes a material different from respective materials of the first and third capping films.

A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having a (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or a combination thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or a combination thereof, where M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

The invention relates to the technical field of angle measurement, and discloses a magnetoresistive element, an angle sensor and electronic equipment. The magnetoresistive element comprises a plurality of magnetoresistive sub-elements, and the magnetoresistive sub-elements are used for inducing in-plane magnetic field components acting on the magnetoresistive sub-elements in a magnetic field generated by the magnetic field source and outputting a linearly changing first signal in response to the in-plane magnetic field components within a preset magnetic field range; the magnetoresistive sub-element comprises a plurality of magnetic tunnel junctions, and sensing layers in the magnetic tunnel junctions are provided with closed vortex magnetization patterns; and the plurality of magnetic orbital transfer elements are positioned around the magnetic resistance sub-elements and are used for adjusting the magnetic field distribution of the magnetic field generated by the magnetic field source around the magnetic resistance sub-elements, so that the first signal is related to the rotation angle of the magnetic field source. The magnetoresistive element can measure the angle information of the magnetic field source in a linear interval, avoids the problem that a strong magnetic field generated by the magnetic field source causes fine offset of the reference layer and further affects the angle measurement precision, and has the advantages of being simple in structure and easy to implement.

Embodiments of the present application disclose a method for constructing an auxiliary flip magnetic tunnel junction model, including: constructing a magnetic tunnel junction device model based on a test data set; providing an auxiliary module model, and determining initial fitting parameters according to the value range of each initial parameter in the auxiliary module model; assigning the initial fitting parameters to the auxiliary module model, and connecting the assigned auxiliary module model to the magnetic tunnel junction device model to obtain an initial auxiliary flip magnetic tunnel junction model; performing simulation based on the initial auxiliary flip magnetic tunnel junction model to determine a simulation error; determining target fitting parameters of the auxiliary module model based on the simulation error, and assigning the target fitting parameters to the auxiliary module model included in the initial auxiliary flip magnetic tunnel junction model to obtain the auxiliary flip magnetic tunnel junction model.

The application provides a MRAM storage device based on vertical 1T1M and a preparation method thereof. The device is composed of a field effect transistor (FET) vertically stacked on a magnetic tunnel junction (MTJ). The magnetic tunnel junction is composed of a multilayer stack of magnetic materials grown on a Si / SiO2 substrate, and each layer from bottom to top is sequentially a bottom electrode, a pinning layer, a reference layer, a barrier layer, a free layer and a top electrode, which are surrounded by a first passivation layer. The field effect transistor is a vertical channel FET in a surround channel around (CAA) configuration, and is vertically stacked from bottom to top by a first metal layer, an isolation layer and a second metal layer. The first metal layer of the field effect transistor is connected to the top electrode of the magnetic tunnel junction through an interconnection layer, thereby forming a 1T1M vertically stacked structure storage device, which can effectively improve the MRAM storage density.