An information sensing and storing device has a dual-MTJ (Magnetic Tunnel Junction) structure, and comprises a bottom electrode, an MTJ 1, a non-ferromagnetic metal isolation layer, an MTJ 2 and a top electrode sequentially from bottom to top, wherein a metal wire is arranged at one side of the device. A fabrication method of the information sensing and storing device comprises the five steps of: 1, depositing a magnetic multi-layer film material on a substrate; 2, performing annealing through an ultrahigh magnetic field vacuum annealing apparatus to fix the magnetization direction of a reference layer; 3, finishing shape fabrication of the dual-MTJ structure by using traditional nanometer device processing technologies such as photoetching, etching and magnetron sputtering; 4, depositing an isolation layer at the outer side of the dual-MTJ structure, and configuring the metal wire near the dual-MTJ structure through the technologies such as photoetching, etching and inlaying; and 5, forming a metal electrode at the top of the dual-MTJ structure by using the processing technologies such as photoetching, etching and inlaying for subsequent integration or test.