604 results about "Magnetic tunnelling" patented technology

The invention provides a magnetic memory and a preparation method thereof. The magnetic memory comprises a plurality of memory units, at least part of the memory units are arranged along a first direction, and each memory unit comprises a magnetic tunnel junction; at least part of the magnetic shielding structure is located between the adjacent storage units in the first direction, and the magnetic shielding structure and the adjacent storage units are arranged at intervals; wherein the magnetic shielding structures and the adjacent storage units are arranged at intervals. Due to the fact that the magnetic shielding structure is arranged between every two adjacent storage units, the storage area can be saved through the design, meanwhile, the magnetic shielding structures can prevent the storage units from making contact with the magnetic shielding structures to cause short circuit, and the storage units have the anti-magnetic characteristic of an opposite internal magnetic field. Therefore, the magnetic memory has the diamagnetic properties of a vertical magnetic field and an in-plane magnetic field, the diamagnetic capability of the magnetic memory is improved, and the reliability of the magnetic memory in a magnetic field environment is further improved.

The invention provides a physical unclonable function magnetic device and an application method thereof, the magnetic device comprises a plurality of magnetic storage units arranged in an array and a control circuit, and each magnetic storage unit comprises a spin orbit moment layer and at least one magnetic tunnel junction arranged on the spin orbit moment layer; and the control circuit is used for applying a composite reconstruction signal with oscillation change to the magnetic memory units, and forming a superposed physical field with oscillation change at the magnetic memory units so as to enable the resistance state of the magnetic tunnel junction to generate oscillation change to realize PUF reconstruction of the plurality of magnetic memory units arranged in an array. In order to solve the problems of limited CRP generated by the PUF circuit and low resource utilization rate, the physical field with oscillation change is formed through the composite reconstruction signal, so that the PUF of the magnetic tunnel junction of the SOT-MRAM generates random oscillation change, the PUF of the magnetic device can be reconstructed, the reconstructed magnetic device can generate new CRP, and the resource utilization rate is improved.

The invention relates to the field of nonvolatile memories, in particular to an SOT-MRAM circuit unit based on a 2T2M differential structure and a storage array circuit of the SOT-MRAM circuit unit. The SOT-MRAM unit comprises a first magnetic tunnel junction, a second magnetic tunnel junction, a first field effect transistor, a second field effect transistor, a first phase inverter, a second phase inverter, a write line, a read line, an input line and an output line which have a specific connection relation. According to the SOT-MRAM circuit unit, through the special 2T2M differential structure design and in combination with the excellent performance of a spin-orbit moment magnetic tunnel junction, the storage and operation performance and efficiency of a 2T2MSOT-MRAM differential circuit unit array are integrally improved, the dependence on the performance of the MTJ is reduced, the SOT-MRAM circuit unit has the better energy efficiency ratio and the more stable read-write speed and precision, and the SOT-MRAM circuit unit has the advantages of being simple in structure, low in cost and high in reliability. And the reliability and the stability are excellent.

The invention relates to a semiconductor structure, a preparation method thereof and a magnetic tunnel junction sensor. The semiconductor structure comprises a substrate, and a buffer layer, a solid magnetic layer, a tunnel barrier layer, a free layer and a protective layer which are located on the substrate. The solid magnetic layer comprises an antiferromagnetic pinning layer and a reference layer which are stacked, the antiferromagnetic pinning layer is located on the top surface of the buffer layer, and the magnetization direction of the reference layer is pinned by the antiferromagnetic pinning layer; the tunnel barrier layer is located on the top surface of the reference layer; the free layer is located on the top surface of the tunnel barrier layer, the thickness of the free layer in the direction perpendicular to the substrate continuously and smoothly changes in the preset direction, the thickness value distribution of the free layer conforms to a preset gradient function, and a preset included angle is formed between the preset direction and the pinned magnetization direction of the reference layer; the protective layer is on the top surface of the free layer. Multi-range or continuous wide-range detection can be realized in a single-chip semiconductor device, and high sensitivity is realized.

The invention discloses a 23T4M anti-radiation TCAM storage unit circuit which comprises a pre-charging module, an RH reading circuit module, a programmable logic module, a reconfigurable magnetic tunnel junction storage module, a discharging module and an output module. In the RH reading circuit module, the grid electrode of a transistor N7 is connected with the drain electrode of a transistor N8, the grid electrode of the transistor N8 is connected with the drain electrode of the transistor N7, a cross coupling structure is formed, a node S0 and a node S1 are controlled by a node Q and a node QB, meanwhile, the node S0 and the node S1 control the charging and discharging paths of the node Q and the node QB respectively, and after any node is overturned by high-energy particles, the charging and discharging paths of the node Q and the node QB are controlled by the node S0 and the node S1. All the nodes are maintained or charged to recover to the original logic level. According to the method, data upset at a single sensitive node can be completely resisted, and meanwhile, the search error rate of the TCAM is improved.

The invention discloses a three-dimensional transient electromagnetic detection method for tunnel advanced geological forecast. The transient electromagnetic exploration method has the advantages of low construction cost, high safety coefficient, reliable detection result and the like. The method comprises the following steps: installing a plurality of loop sources in an area nearby a tunnel face in a set mode, and obtaining stratum information data of the area nearby the tunnel face; and analyzing the data by adopting a three-dimensional transient electromagnetic forward and reverse modeling method to obtain related information of the unfavorable geologic body in front of the tunnel face. According to the method, the efficiency and the accuracy of transient electromagnetic tunnel advanced prediction are improved.

The invention relates to the technical field of semiconductors, and discloses a semiconductor storage structure and an array, and the semiconductor storage structure at least comprises a plurality of semiconductor storage units, a top electrode, and gating devices corresponding to the semiconductor storage units. Each semiconductor storage unit at least comprises a spin orbit moment layer and a magnetic tunnel junction arranged above the spin orbit moment layer; the top electrode is located above the plurality of magnetic tunnel junctions, the plurality of magnetic tunnel junctions share the same top electrode, and a corresponding interconnection through hole is formed between the top electrode and each semiconductor storage unit; each gating device is arranged in the corresponding interconnection through hole, and the two ends of each gating device are electrically connected with the corresponding magnetic tunnel junction and the top electrode respectively. The number of transistors and wires can be reduced, the layout area occupied by the transistors and the wires is saved, and therefore the storage density is improved.

The invention provides an ion beam etching system with an etching rate in-situ monitoring function and an etching method, the ion beam etching system is provided with an objective table which can deflect by 90 degrees and an electrical test detection element which can move close to or far away from the objective table, and by the etching method, an ion source is not closed, a sample is not taken out, and the etching rate can be accurately measured. The etching depth can be accurately monitored by measuring the surface resistance of the sample in situ, the etching rate can be reduced in time, and the method is more suitable for the tape-out process. According to the ion beam etching system and the etching method, sputter spectrum monitoring is replaced by sample surface resistance detection, so that the test sensitivity is higher, the system cost is lower, the etching precision in magnetic tunnel junction preparation is greatly improved, the sample is prevented from being excessively etched, the thickness of a sample layer can be kept consistent, the resistance distribution is uniform, and the quality of the magnetic tunnel junction is improved. And the high success rate preparation of the SOT-MRAM memory with large capacity and small size is realized.

The invention provides an SOT-MRAM memory calculation unit, array, system and method supporting exclusive-or operation, which support data writing and reading and exclusive-or operation and complete common exclusive-or operation in a memory to reduce data transmission so as to relieve the storage wall problem. The SOT-MRAM storage and calculation unit provided by the invention comprises a first NMOS (N-channel Metal Oxide Semiconductor) tube, a first transmission gate and a magnetic tunnel junction SOT-MTJ, the SOT-MRAM storage and calculation array disclosed by the invention comprises four SOT-MRAM storage and calculation units which are arranged in a 2 * 2 manner; the SOT-MRAM storage and calculation system disclosed by the invention comprises an SOT-MRAM storage and calculation array, two induction circuit modules and an XOR operation circuit module, the SOT-MRAM storage and calculation method comprises the following steps of data writing operation, data reading operation and XOR operation.

The invention discloses a magnetoresistive element and sensing equipment, and relates to the technical field of magnetic field measurement. The magnetoresistive element comprises at least one magnetoresistive sub-element, the magnetoresistive sub-element comprises a plurality of bridge arms, and the bridge arms are mutually coupled to form a Wheatstone bridge structure; at least one bridge arm comprises a magnetic resistance bridge arm and a compensation resistor, and the compensation resistor is coupled with the magnetic resistance bridge arm in parallel and used for enabling the resistance of the bridge arm to be lower than that of the magnetic resistance bridge arm; the magnetic resistance bridge arm comprises at least one magnetic tunnel junction, each magnetic tunnel junction has the same magnetic sensitive axis, and the magnetic sensitive axis is parallel or perpendicular to the free layer plane. The bandwidth of the magnetoresistive element is expanded by adjusting the resistance of the bridge arms in the magnetoresistive element, so that the magnetoresistive element can be further used for measuring electrical variables such as high-frequency current, and the magnetoresistive element has the advantages of being simple in structure and easy to implement.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

A magnetic tunnel junction element and a memory device including the same are provided. The magnetic tunnel junction element includes: a pinned layer and a free layer facing each other; a buffer layer on the pinning layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, in which the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re, or Ta, and the auxiliary layer includes W, Mo, or Ta.

A method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device is disclosed. The MTJ device is switchable between a first resistance state and a second resistance state. A first threshold voltage for switching the MTJ device from the second resistance state to the first resistance state is lower than a second threshold voltage for switching the MTJ device from the first resistance state to the second resistance state. The method includes applying a first voltage pulse across the MTJ device with an amplitude having an absolute value equal to or greater than the first threshold voltage and lower than the second threshold voltage, thereby setting the MTJ device to the first resistance state regardless of whether the MTJ device initially is in the first or second resistance state.

The invention relates to the technical field of medicine cold chain logistics information, in particular to a medical intravenous distribution code scanning logistics tracking method which comprises the following steps: attaching a self-energized label on the outer side of a preparation, reading magnetic tunnel junction physical fingerprints and nanocrystalline point-deoxyribonucleic acid information to generate a reference hash value, and collecting humiture recursion environment hash chains at fixed intervals; generating a challenge by using a satellite high-entropy random number during handover, obtaining a second fingerprint, constructing a zero-knowledge event proof in combination with a reference hash value and an environment chain, and writing a plurality of proof into a distributed account book after dynamic planning aggregation; and synchronously capturing wireless channel state information to construct a dynamic graph, and outputting a next node instruction and a risk score by a graph neural network and near-end strategy optimization. According to the method, battery-free anti-cloning and anti-tampering cold chain monitoring and network disconnection path decision are realized, the chain cost is low, and the robustness is high.

A magnetic tunneling junction (MTJ) device structure and the method of constructing such device are disclosed. Also disclosed are methods of using the device for spin-dependent transport characterization through biomolecules for structure and dynamic function analysis in physiological environments.

A semiconductor device including a magnetic tunnel junction (MTJ) stack and an upper word line of the MTJ stack surrounding vertical side surfaces of the MTJ stack. A semiconductor device including a magnetic tunnel junction (MTJ) stack and an upper word line for the MTJ stack surrounding vertical side surfaces and an upper surface of a reference layer of the MTJ stack. A method including forming a forming a magnetic tunnel junction (MTJ) stack and forming a dielectric encapsulation layer surrounding vertical side surfaces of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode of the MTJ stack.

The embodiment of the invention provides a physical unclonable function generator and a true random number generator. The physical unclonable function generator comprises a storage array and a control unit, a storage unit in the storage array comprises a magnetic storage device, and the magnetic storage device comprises a magnetic tunnel junction; the control unit is used for controlling the application of a magnetic field along a target direction to the storage array, and reading the resistance state of the storage unit to generate a physical unclonable function after the application of the magnetic field is stopped; wherein the target direction is perpendicular to or approximately perpendicular to the magnetic moment direction of the free layer in the magnetic tunnel junction in the in-plane direction, and the randomness and uniformity of the physical unclonable function are improved.

The invention provides a self-reference PUF device, a read-write circuit and a read-write circuit array. The PUF device comprises a middle magnetic tunnel junction (MTJ), and a first MTJ and a second MTJ which are respectively positioned on two sides of the middle MTJ, a gap exists between the first MTJ and the middle MTJ, a gap exists between the second MTJ and the middle MTJ, the first MTJ, the middle MTJ and the second MTJ use the same free layer, and the width of the free layer is gradually reduced from the part located in the middle MTJ to the parts of the first MTJ and the second MTJ so as to form a magnetic anisotropic gradient; a voltage control layer is arranged on the free layer and located in the area of the middle MTJ. The MTJs at the two ends can serve as reading devices, the magnetic domain wall can be fixed in the area of the middle MTJ in the initial state, then the magnetic domain wall is driven to randomly relax towards the two sides based on anisotropy, after the magnetic domain wall is stabilized on the MTJ on one side, the MTJ forms a low-resistance state, the MTJ on the corresponding other side is in a high-resistance state, and therefore the self-reference structure of the device is formed, and the self-reference performance of the device is improved. And the mode can improve the reading margin of the device.

Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM) device. The MRAM device includes a reference layer; a tunnel barrier layer next to the reference layer; and a free layer next to the tunnel barrier layer, where the free layer includes a crystalline AIMnGe layer in a C38 structure formed on a magnetic seed layer, and the magnetic seed layer is a crystallized MnCo2Si layer or a crystallized MnCo2Ge layer having a cubic Heusler structure with a (001) texture. A method of forming the MRAM device is also provided.

A magnetoresistive memory cell includes a first electrode; a second electrode; and a layer stack located between the first electrode and the second electrode and comprising, from one end to another, a first reference layer, a first tunnel barrier layer, a free layer, a second tunnel barrier layer, and a second reference layer. A first one of the first reference layer and the second reference layer comprises a positive spin polarization material. A second one of the first reference layer and the second reference layer comprises a negative spin polarization material. A magnetization direction of the second reference layer is parallel to a magnetization direction of the first reference layer.

To provide a new multilayer thin film exhibiting a tunnel magnetoresistance effect.SOLUTION: The present invention is a multilayer thin film having an insulating layer and a magnetic layer sandwiching the insulating layer. At least one of the magnetic layers is made of a Co-based alloy containing Al and / or Ga. For example, Co is contained in an amount of 58.5 to 63 at% with respect to the entire Co-based alloy. The Co-based alloy constituting a magnetic layer may be a β phase. The insulating layer is, for example, MgO or MgAl2O4. The magnetic layer on the other side of the insulating layer may be CoFeB (alloy) in addition to CoAl. Each layer is formed by sputtering, and planarization, crystallization, and the like are performed by heat treatment. A magnetic tunnel junction (MTJ) having the multilayer thin film of the present invention exhibits a high magnetoresistance change ratio (MR ratio), and can be applied to a next-generation magnetoresistance memory (MRAM) or the like.SELECTED DRAWING: Figure 3

A semiconductor device and methods for forming the device are disclosed. The semiconductor device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. The bottom electrode and / or the top electrode include doped SiGeSn.

The invention provides a magnetic storage element and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the problem of low overturning efficiency of a free layer in the prior art. The magnetic storage element comprises a substrate, a spacing layer, a spin orbit moment layer and a magnetic tunnel junction which are sequentially stacked from bottom to top, and a first ferromagnetic structure and a second ferromagnetic structure which are independently arranged on two side walls of the spacing layer, the first ferromagnetic layer in the first ferromagnetic structure and the second ferromagnetic layer in the second ferromagnetic structure are opposite in magnetic moment direction, so that stray fields in opposite directions can be generated; the top surfaces of the first ferromagnetic structure and the second ferromagnetic structure are not higher than the top surface of the spin orbit moment layer and are electrically connected with the spin orbit moment layer to form a write-in path, and when write-in current flows through the first ferromagnetic structure or the second ferromagnetic structure, a stray field generated by the ferromagnetic structure through which the write-in current flows is weakened; a stray field generated by the ferromagnetic structure through which the write-in current does not flow assists the free layer in overturning, and the overturning efficiency of the free layer can be improved.

The invention provides a magnetic storage unit and device based on signal time delay. The unit comprises a first spin orbit moment layer and a first magnetic tunnel junction arranged on the first spin orbit moment layer. The distances between the first magnetic tunnel junction and the two ends of the first spin orbit moment layer are respectively a first distance and a second distance, and the first distance and the second distance are not equal; respectively inputting a first pulse signal and a second pulse signal from two ends of the first spin orbit moment layer along the first distance and the second distance; and the first pulse signal and the second pulse signal form a first write-in spin transfer torque current at the first magnetic tunnel junction due to signal time delay, so that the magnetic moment of a free layer of the first magnetic tunnel junction is subjected to deterministic overturning under the action of the first write-in spin transfer torque current. Deterministic writing of the magnetic tunnel junction can be realized without an additional auxiliary magnetic field, the device structure is simplified, and the area and power consumption overhead are reduced.

In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.

A magnetic memory device includes a substrate that includes a cell region and a boundary region adjacent to the cell region, a data storage structure that includes a magnetic tunnel junction pattern and is on the cell region, and a dummy pattern structure on the boundary region. The dummy pattern structure is spaced apart from the data storage structure in a first direction that is parallel to an upper surface of the substrate. The dummy pattern structure is parallel to the upper surface of the substrate and extends linearly in a second direction that intersects the first direction.

The invention discloses a multiferroic tunnel junction based on a Janus ferroelectric material, a device and a method. The magnetic tunnel junction comprises a polarization layer; a first ferromagnetic conductive layer is superposed on the upper surface of the polarization layer; a second ferromagnetic conductive layer is arranged on the lower surface of the polarization layer; a first electrode layer is superposed on the upper surface of the first ferromagnetic conductive layer; a second electrode layer is arranged on the lower surface of the second ferromagnetic conductive layer; wherein the polarization layer is made of a Janus ferroelectric material. The method has the advantages of low energy consumption and high storage density.

The invention provides a tunnel magnetoresistive sensor based on a Wheatstone full-bridge structure and a manufacturing method thereof, and the tunnel magnetoresistive sensor comprises two tunnel magnetoresistive unit structures which comprise heavy metal layers; two magnetic tunnel junctions are deposited on the heavy metal layer; the antiferromagnetic layer is deposited on the surface of the reference layer of the magnetic tunnel junction so as to fix the pinning direction of the magnetic tunnel junction; the pinning directions of the four magnetic tunnel junctions in the two tunnel magnetic resistance unit structures are the same, the four magnetic tunnel junctions are connected according to a Wheatstone full-bridge structure, currents in different directions are introduced into the heavy metal layer, the magnetization directions of the free layers in the magnetic tunnel junctions are biased through the spin-orbit moment effect, and the magnetic resistance of the magnetic tunnel junctions is improved. The magnetization directions of the free layers in two adjacent magnetic tunnel junctions are symmetrical about the X axis in the XY plane. The magnetoresistive sensor is high in sensitivity and wide in linear interval, the spin orbit moment is used instead of the process bias magnetization direction, the machining process is simplified, errors generated by different processes are eliminated, and the accuracy of magnetic field measurement is improved.

The invention provides a magnetic memory cell and array, and relates to the technical field of semiconductors, the magnetic memory cell at least comprises a spin orbit moment layer and a magnetic tunnel junction arranged above the spin orbit moment layer; a first write-in voltage is applied to a write-in path between the top end of a magnetic tunnel junction and at least one end of a spin-orbit moment layer, and meanwhile, the magnetic tunnel junction is short-circuited and the corresponding end of the spin-orbit moment layer is open-circuited, so that the resistance state of the magnetic storage unit is in an open-circuit state; and comparing the simultaneously read detection signal of the magnetic storage unit with a reference signal arranged outside the magnetic storage unit to obtain the data state stored by the magnetic storage unit. According to the SOT-MRAM-based magnetic storage unit, OTP or FTP data reading and writing are realized, and meanwhile, the size of an OTP unit or an FTP unit is reduced.

The invention provides a magnetoresistive random access memory structure and a preparation method thereof. The method comprises the following steps: providing a substrate; forming a magnetic tunnel junction film layer on the substrate; forming a first dielectric layer on the magnetic tunnel junction film layer; etching the two ends of the first dielectric layer in the first direction so as to enable the two opposite ends of the magnetic tunnel junction film layer in the first direction to extend out of the etched first dielectric layer; forming a metal layer on the magnetic tunnel junction film layer, wherein the metal layer wraps the etched first dielectric layer; and etching the metal layer to form top electrodes on two opposite sides of the first dielectric layer along the first direction. According to the invention, the yield of the MRAM can be improved.