Information sensing and storing device and fabrication method thereof

A storage device and sensing technology, applied in the field of sensors and memories with non-volatile characteristics, can solve problems such as increased sensitivity, unfavorable system integration, structural redundancy, etc., to save integrated circuit area, solve large power consumption, reduce The effect of device power consumption

Active Publication Date: 2014-11-05
BEIHANG UNIV
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

The above process involves information transmission between various devices, and has disadvantages such as high power consumption, high information bit error rate, and structural redundancy, which is not conducive to system integration, further reduction in size, and improvement in sensitivity

Method used

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  • Information sensing and storing device and fabrication method thereof
  • Information sensing and storing device and fabrication method thereof
  • Information sensing and storing device and fabrication method thereof

Examples

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preparation example Construction

[0058] See image 3 , the present invention comprises a kind of preparation method of information sensing and storage device, and the concrete steps of this method are as follows:

[0059] Step 1, as shown in FIG. 2( a ), a magnetic multilayer film material is deposited on the substrate 201 . As shown in Figure 2(b)-(e), in some embodiments, they are deposited sequentially from bottom to top: bottom electrode 202, pinning layer 211, reference layer 212, oxide barrier layer 213, free layer 214, non-ferromagnetic Metal isolation layer 203 , free layer 221 , oxide barrier layer 222 , reference layer 223 , pinning layer 224 , and top electrode 204 .

[0060] In some embodiments, the reference layers 212, 223 and the free layers 214, 221 include mixed metal materials CoFe, CoFeB or NiFe, and the composition ratio of each element in the mixed metal materials may be different, and the thickness ranges from 0 to 20 nm. The oxide barrier layers 213, 222 include MgO or Al 2 o 3 , the...

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Abstract

An information sensing and storing device has a dual-MTJ (Magnetic Tunnel Junction) structure, and comprises a bottom electrode, an MTJ 1, a non-ferromagnetic metal isolation layer, an MTJ 2 and a top electrode sequentially from bottom to top, wherein a metal wire is arranged at one side of the device. A fabrication method of the information sensing and storing device comprises the five steps of: 1, depositing a magnetic multi-layer film material on a substrate; 2, performing annealing through an ultrahigh magnetic field vacuum annealing apparatus to fix the magnetization direction of a reference layer; 3, finishing shape fabrication of the dual-MTJ structure by using traditional nanometer device processing technologies such as photoetching, etching and magnetron sputtering; 4, depositing an isolation layer at the outer side of the dual-MTJ structure, and configuring the metal wire near the dual-MTJ structure through the technologies such as photoetching, etching and inlaying; and 5, forming a metal electrode at the top of the dual-MTJ structure by using the processing technologies such as photoetching, etching and inlaying for subsequent integration or test.

Description

technical field [0001] The invention relates to an information sensing and storage device and a preparation method thereof, which includes an information sensing and storage structure based on a novel magnetic tunnel junction (MTJ), and belongs to the technical field of sensors and memories with non-volatile characteristics. Background technique [0002] The magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) resistance sensor uses the tunnel magnetoresistance (TMR) effect (Tunnel Magnetoresistance, TMR) of the magnetic multilayer film material, that is, the resistance of the magnetic multilayer film material changes with the external magnetic field (including size and direction). obvious change. The magnetic field sensor based on the magnetic tunnel junction has the advantages of large resistance change rate, high resistivity, low power consumption, and good temperature stability. Magneto Resistance, AMR), giant magnetoresistance (Giant Magneto Resistance, GMR) effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12
Inventor 张雨赵巍胜王梦醒郭玮张有光
Owner BEIHANG UNIV
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