7061 results about "Quantum mechanics" patented technology

Interferometers and autocorrelator based sensors are disclosed that are configured to have multiple sample arms which can be scanned and the backscattered low coherence source light from a sample resolved in a single sweep of one or more variable delays of the sensor. Borescopes and catheters capable of scanning multiple sections or areas of materials and tissues using these sensors are described.

A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.

A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry.

A method for computing using a quantum system comprising a plurality of superconducting qubits is provided. Quantum system can be in any one of at least two configurations including (i) an initialization Hamiltonian H₀ and (ii) a problem Hamiltonian H_P. The plurality of superconducting qubits are arranged with respect to one another, with a predetermined number of couplings between respective pairs of superconducting qubits in the plurality of qubits, such that the plurality of superconducting qubits, coupled by the predetermined number of couplings, collectively define a computational problem to be solved. In the method, quantum system is initialized to the initialization Hamiltonian H_O. Quantum system is then adiabatically changed until it is described by the ground state of the problem Hamiltonian H_P. The quantum state of quantum system is then readout thereby solving the computational problem to be solved.

A linear vibration motor comprising a movable unit, a base assembly having a coil assembly, a housing and an elastic member, in which the movable unit has the maximum mass from a fixed housing volume. The elastic member has the outer periphery fixed to the ceiling of the housing and the inner periphery fixed to the top of the movable unit opposed to the outer periphery. The elastic member is deformable to the extent that the outer and inner peripheries are shift to a coplanar position from a parallel position where they are spaced for a predetermined distance from each other. The core assembly is distanced downward from the movable unit or a predetermined gap.

A method of forming a magnetic stack and a structure for a magnetic stack of a resistive memory device. A crystallization inhibiting layer is formed over the free layer of a magnetic stack, improving thermal stability. The crystallization inhibiting layer comprises an amorphous material having a higher crystallization temperature than the crystallization temperature of the free layer material. The crystallization inhibiting layer inhibits the crystallization of the underlying free layer, providing improved thermal stability for the resistive memory device.

An MR element includes an MR stack disposed between first and second main shield portions, and a pair of side shields disposed on opposite sides of the MR stack in the track width direction. The first main shield portion includes a first exchange coupling shield layer that is exchange-coupled to a first antiferromagnetic layer. The second main shield portion includes a second exchange coupling shield layer that is exchange-coupled to a second antiferromagnetic layer. The MR stack includes a spacer layer, and first and second free layers with the spacer layer therebetween. The direction of magnetization of the first free layer is controlled by the first exchange coupling shield layer. The direction of magnetization of the second free layer is controlled by the second exchange coupling shield layer. Each side shield includes at least one shield-coupling magnetic layer that is in contact with and magnetically coupled to one of the first and second exchange coupling shield layers.

Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer.

A system for analyzing one or more ion species of a sample including a first ion mobility filter associated with a first flow path for passing first ions of the sample, a second ion mobility filter associated with a second flow path for passing second ions of the sample, a first outlet from the first flow path for passing a portion of the first ions from the first flow path to the second flow path, and a first outlet from the second flow path for removing neutral particles from the second flow path where the first outlet from the second flow path is upstream of the second ion mobility filter in relation to the ion flow in the second flow path.

An assembly for supporting a substrate of an integrated circuit and forming a cavity resonator with the substrate. The assembly includes a baseplate in which a cavity for the cavity resonator is integrally formed. A substrate is mounted over the cavity resonator in the baseplate and an excitation coupling extends into the cavity of the cavity resonator.

There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

An integrated FIB/PEM apparatus and method for performing failure analysis on integrated circuits. In-situ failure analysis is enabled by integrating Photon Emission Microscopy into a Focused Ion Beam system, thereby improving throughput and efficiency of Failure Analysis. An iterative method is described for identifying and localizing fault sites on the circuit.

A method an apparatus for manipulating particles (micro, nano, and pico) having one or more characteristics with an optical trap formed by modulating a laser beam with a Diffractive Optical Element (DOE). At least one characteristic of the material is selected; and a laser beam having a selected wavelength corresponding to the at least one selected characteristic of the material is generated. Values of the DOE are calculated corresponding to the at least one selected characteristic of the material. The beam and the DOE are modulated to produce a holographic optical trap having properties corresponding to the at least one selected characteristic; the trap is focused to a beam focus or selected spot size; and the beam focus is located near a particle location for trapping the particle therein.

An object of the present invention is to provide a perpendicular magnetic recording medium the SNR of which is improved by reducing noise thought to be due to an auxiliary recording layer so that a higher recording density can be achieved, and a method of manufacturing the same.

In order to achieve the above object, a representative configuration of a perpendicular magnetic recording medium 100 according to the present invention includes, on a base, at least a magnetic recording layer 122 having a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape; a non-magnetic split layer 124 disposed on the magnetic recording layer 122 and containing Ru and oxygen; and an auxiliary recording layer 126 that is disposed on the split layer 124 and that is magnetically approximately continuous in an in-plane direction of a main surface of the base 110.

An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

A substrate measuring apparatus includes a reference value storage unit, an electron irradiator, a current measuring device, and a property value calculating device. The reference value storage unit stores data on the relationship between current flow in a sample substrate with a contact hole of known characteristics that is irradiated by an electron beam. The current measuring device measures current flow in a test substrate. The property value calculating device calculates the property value of the contact hole formed in a material layer of the test substrate using the current flow in the test substrate and the data stored in the reference value storage unit. The property values of the contact hole may be a surface area of underlying substrate exposed by a contact hole or an amount of residual material remaining in the contact hole.

The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible. To provide high accuracy, the apparatus is configured such that the axes of its optical systems can be aligned, and aberrations corrected, by a variety of methods.