MRAM storage unit

A storage unit and memory unit technology, applied in information storage, static memory, digital memory information, etc., can solve the problems of small reading window, error-prone reading, overlapping distribution curves, etc., to reduce the reading error rate, It is not easy to read the wrong effect

Active Publication Date: 2020-01-07
CETHIK GRP +1
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] Existing magnetic memories based on spin-orbit moments can only store low-resistance states or high-resistance states. Due to the distribution of low-resistance states and high-resistance states of devices in the memory array, the read window is small or the distribution curves overlap. Error-prone and slow to read

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Embodiment Construction

[0042] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0043] An embodiment of the present invention provides an MRAM memory unit, comprising: two magnetic tunnel junctions and a spin-orbit moment supply line, the two magnetic tunnel junctions are respectively located on the same side surface of the spin-orbit moment supply line, and each magnetic tunnel The free layer of the junction is close to...

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Abstract

The invention provides an MRAM storage unit. The unit comprises two magnetic tunnel junctions and a spin orbital moment providing line, the two magnetic tunnel junctions are located on the surface ofthe same side of the spin orbital moment providing line, wherein the free layer of each magnetic tunnel junction is close to the spin orbital moment providing line, the magnetization directions of thereference layers of the two magnetic tunnel junctions are the same, and the spin orbital moment providing line is used for applying spin magnetic moments in opposite directions to the two magnetic tunnel junctions, so that the free layers of the two magnetic tunnel junctions have opposite magnetization directions. According to the MRAM storage unit, complementary resistance states can be stored,differential signals are formed during state reading, the reading error rate is reduced, and the data reading speed can be remarkably increased.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to an MRAM storage unit. Background technique [0002] The core part of the storage unit of traditional magnetic memory (Magnetic Random Access Memory, referred to as MRAM) is the magnetic tunnel junction MTJ. MTJ is a two-port structure device composed of multilayer films. The ferromagnetic layers are separated by a tunneling barrier layer. The magnetization direction of one ferromagnetic layer is fixed, which is called the fixed layer or reference layer, and the magnetization direction of the other ferromagnetic layer can be changed, which is called is a free layer, and the magnetization direction of the free layer may be parallel to the magnetization direction of the reference layer (Parallel, P for short) or anti-parallel to the magnetization direction of the reference layer (Anti-Parallel, AP for short). When the magnetization directions of the two ferromagnetic layers...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16H01L27/22H01L43/08H10N50/10
CPCG11C11/1673H10B61/20H10N50/10
Inventor 何世坤熊保玉竹敏韩谷昌
Owner CETHIK GRP
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