183 results about "Spin orbit torque" patented technology

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

A spin-orbit-torque (SOT) memory cell includes a first electrode embedded in dielectric material layers overlying a substrate; a magnetic-tunnel-junction-containing (MTJ-containing) pillar structure contacting a top surface of the first electrode and including a pinned layer and a free layer that overlies the pinned layer; a spin current metal line including a center portion that contacts the MTJ-containing pillar structure; and a selector element electrically connected to a first end of the spin current metal line.

A memory device includes a spin-orbit torque (“SOT”) conductor, a magnetic tunneling junction (“MTJ”) structure above the SOT conductor, a two-terminal read selector above the MTJ structure, a two-terminal write selector above the MTJ structure, and a bit line below the SOT conductor. The two-terminal read selector is conductively connected to the pinned layer in the MTJ structure. The two-terminal write selector is conductively connected to a first terminal of the SOT conductor. The bit line is conductively connected to a second terminal of the SOT conductor.

The invention provides a magnetic random access memory and a preparation method thereof. The magnetic random access memory is applied to a comparison circuit, and comprises a magnetic tunnel junction comprising a free layer, a barrier layer and a reference layer which are stacked in sequence; the spin-orbit torque layer is located on the side, away from the reference layer, of the free layer, the conductive material layer is located on the side, away from the spin-orbit torque layer, of the magnetic tunnel junction, and a conductive material of the conductive material layer has the following characteristics that spontaneous magnetization capacity is achieved, and the resistance temperature coefficient is smaller than 0; the conductive material layer comprises a first part and a second part which are arranged at an interval, the first part is in contact with the reference layer, a first input end of the comparison circuit is electrically connected with the first part, and a second input end of the comparison circuit is electrically connected with the second part. According to the invention, the technical problems that the reading window of the magnetic tunnel junction becomes small and even the reading is wrong and the magnetic random access memory needs to apply an auxiliary magnetic field along the current direction to realize the deterministic overturning of the magnetic moment are at least solved.

A magnetoresistive memory device and an integrated memory circuit are provided. The magnetoresistive memory device includes a magnetic tunneling junction (MTJ) and a composite spin orbit torque (SOT) channel in contact with a terminal of the MTJ. The SOT channel includes: a first channel layer, configured to convert a portion of a charge current into an orbital current based on orbital Hall effect; and a second channel layer, covering the first channel layer, and configured to convert a portion of the charge current into a first spin current based on spin Hall effect, and to convert the orbital current to a second spin current.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

An apparatus is provided that includes an array including n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes including a spin orbit torque MRAM non-volatile memory cell configured to store a corresponding weight of an n×m array of weights each having a first weight value or a second weight value, and a control circuit configured to apply n input voltages each having a first input value or a second input value to corresponding n first conductive lines, the n input voltages corresponding to an n-element input vector. The spin orbit torque MRAM non-volatile memory cells are configured to generate m output currents at the m second conductive lines upon application of the n input voltages. The m output currents corresponding to a result of multiplying the input vector by the n×m array of weights.

A magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. The magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (SOT) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the SOT layer includes an orbital Hall conductance (OHC) material layer configured to provide an orbital Hall current and a conversion layer configured to convert the orbital Hall current of the OHC material layer into the spin current, and the OHC material layer includes at least one material of iridium (Ir), manganese (Mn), vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), tungsten (W), and rhenium (Re), or an alloy thereof.

A semiconductor device includes a substrate, magnetic tunnel junction (MTJ) structures, and a write structure. The MTJ structures are disposed above the substrate. The write structure is disposed on and connected with the MTJ structures. The write structure includes spin-orbit torque (SOT) patterns and an electrically conductive layer. The SOT patterns are separated from one another, and each of the SOT patterns is disposed on and connected with one of the MTJ structures. The conductive layer covers the SOT patterns. The electrically conductive layer is partly disposed above the SOT patterns in a vertical direction and partly disposed between the SOT patterns in a first horizontal direction.

The invention discloses a magnetic multilayer film device based on spin orbit torque and a preparation method, and relates to the technical field of spintronics, and the device is composed of a Hall bar composed of a magnetic multilayer film and a Ti / Au composite electrode. Wherein the magnetic multilayer film is composed of a buffer layer, a heavy metal layer, a ferromagnetic layer and an oxide covering layer. In the invention, the buffer layer is tantalum; the heavy metal layer is platinum-holmium alloy; the ferromagnetic layer is cobalt iron boron; and the covering layer is magnesium oxide. According to the invention, the spin Hall angle of the SOT device is improved, and the energy consumption of the device is reduced. When a device is subjected to in-situ annealing, a sample table with an adjustable angle is used for constructing a temperature gradient to realize SOT-based magnetization overturning without in-plane field assistance, and a brand new technical route is provided for subsequent research and development of SOT-MRAM.

The present disclosure generally relates to a magnetic recording device comprising a current-in-plane (CIP) spin orbit torque (SOT) device. The SOT device comprises a topological material (TM) layer and one or more free layers. The TM layer may be recessed from the MFS, and may comprise BiSb or YPtBi. Current is configured to flow in-plane into the TM layer. In one embodiment, one or more free layers are disposed on a same surface of the TM layer. In another embodiment, one or more free layers are disposed on opposite surfaces of the TM layer. In embodiments, comprising two or more free layers, voltage outputs read from at least two of the two or more free layers are opposite, and the two free layers have opposite polarities. In another embodiment, the SOT device comprises four free layers arranged in a bridge configuration.

Disclosed is an operation method of a neural network element using a Hall voltage. The neural network element has a hole pattern portion, and the hole pattern portion has a cross shape. When a pulse current is applied, horizontal magnetic anisotropy is formed in a ferromagnetic layer by means of spin-orbit torque, and when an external magnetic field in a direction perpendicular to the pulse current is applied, the inversion of magnetization occurs by means of additional torque. The movement of a magnetic domain wall is performed by the inversion of magnetization, spin electrons applied thereby are scattered, and a Hall voltage is generated according to the anomalous Hall effect. The generated Hall voltage increases according to the number of applications of the pulse current or pulse voltage.

A magnetoresistive random access memory (MRAM) structure is provided. The MRAM structure includes a chiral spin-orbit torque (SOT) metal bottom electrode (18) underneath a magnetic free layer (26), wherein the chiral SOT metal bottom electrode (18) is surrounded by a via dielectric material structure (24). The chiral SOT metal bottom electrode (18) is such that the charging current direction, the spin current direction, and the spin polarization direction are in the same direction perpendicular to the horizontal surface of the chiral SOT metal bottom electrode (18).

The present disclosure generally relates to a deep neural network (DNN) device utilizing spin orbital-spin orbital (SO-SO) devices. The SO-SO devices each includes two SOT layers, a first spin orbit torque (SOT1) layer, a second spin orbit torque (SOT2) layer, and a ferromagnetic layer disposed between the SOT1 and SOT2 layer. Each SO-SO device further comprises three terminals, one per each SOT layer, for in plane current flow to or from the respective SOT layer, and one for perpendicular current flow through multiple layers, or the overall stack, of the SO-SO device. The SO-SO device thus efficiently provides spin-to-charge and charge-to-spin mechanisms in the same device, and can be flexibility configured to perform various functions of a neural node of a DNN. These functions include storing programmed weights, multiplying inputs and weights and summing such multiplication results, and performing an activation function to determine a neural node output.

The present disclosure generally relates to a magnetic recording head comprising one or more spin-orbit torque (SOT) devices, the SOT devices each comprising a bismuth antimony (BiSb) layer. The magnetic recording head comprises a SOT device comprising a first shield extending to a media facing surface (MFS), a seed layer disposed over the first shield, the seed layer being disposed at the MFS, a free layer disposed on the seed layer, the free layer being disposed at the MFS, a bismuth antimony (BiSb) layer disposed over the free layer, the BiSb layer being recessed from the MFS, a second shield disposed over the BiSb layer, the second shield extending to the MFS, and a shield notch coupled to the second shield, the shield notch being disposed between the first shield and the second shield. The magnetic recording head may be a two-dimensional magnetic recording head comprising two SOT devices.

The present disclosure generally relates to a magnetic sensor half bridge circuit. The half bridge circuit comprises a bias source connected to a first leg and a second leg. The first leg comprises one or more first spin-orbit torque (SOT) structures connected in series, each first SOT structure comprising a first ferromagnetic (FM) layer disposed on a first SOT layer. The first SOT layer has a first end connected to ground and a second end connected to a first voltage sensor. The second leg comprises one or more second SOT structures connected in series, each second SOT structure comprising a second FM layer disposed on a second SOT layer. The second SOT layer has a first end connected to a second voltage sensor and a second end connected to a ground. The first voltage sensor is disposed adjacent to the second voltage sensor.

The present disclosure generally relates to topological semi-metal (TSM) based spin-orbit torque (SOT) devices, and methods of forming a TSM layer. The TSM layer of the SOT device comprises YPtBi having a 1:1.02:1.05 stoichiometry to a 1:1.25:1.35 stoichiometry, such as a 1:1.11:1.13 stoichiometry. The TSM layer comprising about 10% less of Y compared to Pt and Bi increases the spin Hall angle (SHA) and the spin Hall conductivity. Increasing the Pt concentration ratio to greater than 1 enhances both the SHA and the spin Hall conductivity of the TSM layer by a factor of two, and further helps increase the YPtBi surface grain size, which in turn helps improve the interface spin transparency. Increasing the Bi / Y concentration ratio to greater than 1 approaching that of Pt enhances both the resistivity of the TSM layer and the effective SHA by a factor of two.

The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a first spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the first SOT layer, forming a second SOT layer on the IMD layer, forming a first hard mask on the second SOT layer, patterning the first hard mask along a first direction, and then patterning the first hard mask along a second direction.

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

A method for fabricating a magnetoresistive random access memory (MRAM) device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, and then forming a first cap layer adjacent to the MTJ. Preferably, the first cap layer has a first thickness and a second thickness.

The invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof, and the manufacturing method of the magnetoresistive random access memory (MRAM) mainly comprises the following steps: firstly, forming a spin-orbit torque (SOT) layer on a substrate, then forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first covering layer beside the MTJ, forming a second covering layer beside the MTJ, and forming a third covering layer beside the MTJ. An ion implantation process is then performed to form a first doped region in the SOT layer and on one side of the MTJ and a second doped region in the SOT layer and on the other side of the MTJ, wherein the first doped region and the second doped region form a ring around the MTJ in a plan view.

A magnetic memory device includes a substrate having top and bottom surfaces, a first active region on the top surface of the substrate, the first active region including a lower channel pattern and a lower source / drain pattern, a second active region stacked on the first active region, the second active region including an upper channel pattern and an upper source / drain pattern, a gate electrode on the lower and upper channel patterns and extending in a first direction, a lower interconnection layer on the bottom surface of the substrate, a magnetic tunnel junction pattern and a spin-orbit torque line in the lower interconnection layer, a first lower contact electrically connecting the lower source / drain pattern to the magnetic tunnel junction pattern, and a second lower contact electrically connecting the upper source / drain pattern to the spin-orbit torque line.

A method for fabricating a magnetoresistive random access memory (MRAM) device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first cap layer adjacent to the MTJ, and then forming a second cap layer adjacent to the first cap layer. Preferably, a thickness of the first cap layer is greater than a thickness of the second cap layer.

A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having a (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or a combination thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or a combination thereof, where M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

A spin-orbit torque magnetoresistive random access memory (SOT MRAM) device is provided. Each SOT MRAM device uses a topological conductor (i.e., a topological metal or a topological semimetal) as both an interconnect layer and an SOT layer, which are integrated at the same metal layer. The SOT MRAM device also includes a magnetic tunnel junction (MTJ) structure contacting the SOT layer, and a contact structure contacting the MTJ structure.

The present disclosure generally relates to topological semi-metal (TSM) and topological insulator (Tl) based spin-orbit torque (SOT) devices and a method of forming thereof. Tl or TSM-based SOT device (such as that with BiSb in the SOT layer) has been proposed for applications in magnetic switching and sensor applications, where current flows in a CIP (current-in-plane) or CPP (current-perpendicular-to-the-plane) direction, respectively. For CPP SOT devices, the requirement for the Tl or TSM layer's bulk property is to be more insulating, to minimize shunting. However, for CIP SOT devices, the requirement for the Tl or TSM layer's bulk property is to be more conductive, for less power consumption. Disclosed herein are various embodiments covering types and amounts of dopants for the Tl or TSM layer, to decrease the bandgap of the Tl or TSM layer for CIP SOT devices, thereby increasing the bulk conductivity for lower power consumption.

A method for fabricating a magnetoresistive random access memory (MRAM) device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first cap layer adjacent to the MTJ, forming a first oxide layer on the first cap layer, and forming a second cap layer on sidewalls of the first oxide layer. Preferably, a top surface of the second cap layer is higher than a top surface of the MTJ.

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S1), a free layer (FL) disposed over the BiSb layer, and a second shield (S2) disposed over the FL. The S1, the FL, and the S2 are disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and / or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the S2 to the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the S2 to the S1.

A magnetoresistive component (100) is provided, comprising at least one magnetoresistive element (110) comprising a layer stack of ferromagnetic layers (112; 114; 116; 118) and non-magnetic layers (113; 115) stacked in a first direction. The layer stack comprises a ferromagnetic layer (112; 118) with a magnetic orientation to be switched. Adjacent to the ferromagnetic layer (112; 118), a first conductor (120-1) extends in a second direction, and a second conductor (120-2) extends in a third direction. The first and second conductors are configured to induce spin-orbit torque (SOT) in the ferromagnetic layer (112; 118). A control circuit (130) is configured to apply a first current pulse to the first conductor (120-1) and a second current pulse to the second conductor (120-2) in a temporally overlapping manner and with different time characteristics.For example, the control circuit (130) may be configured to switch off the second current pulse before the first current pulse is switched off in order to switch the magnetic orientation of the ferromagnetic layer (112; 118).