116 results about "Spin orbit torque" patented technology

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

The invention provides a magnetic random access memory and a preparation method thereof. The magnetic random access memory is applied to a comparison circuit, and comprises a magnetic tunnel junction comprising a free layer, a barrier layer and a reference layer which are stacked in sequence; the spin-orbit torque layer is located on the side, away from the reference layer, of the free layer, the conductive material layer is located on the side, away from the spin-orbit torque layer, of the magnetic tunnel junction, and a conductive material of the conductive material layer has the following characteristics that spontaneous magnetization capacity is achieved, and the resistance temperature coefficient is smaller than 0; the conductive material layer comprises a first part and a second part which are arranged at an interval, the first part is in contact with the reference layer, a first input end of the comparison circuit is electrically connected with the first part, and a second input end of the comparison circuit is electrically connected with the second part. According to the invention, the technical problems that the reading window of the magnetic tunnel junction becomes small and even the reading is wrong and the magnetic random access memory needs to apply an auxiliary magnetic field along the current direction to realize the deterministic overturning of the magnetic moment are at least solved.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

The invention discloses a magnetic multilayer film device based on spin orbit torque and a preparation method, and relates to the technical field of spintronics, and the device is composed of a Hall bar composed of a magnetic multilayer film and a Ti / Au composite electrode. Wherein the magnetic multilayer film is composed of a buffer layer, a heavy metal layer, a ferromagnetic layer and an oxide covering layer. In the invention, the buffer layer is tantalum; the heavy metal layer is platinum-holmium alloy; the ferromagnetic layer is cobalt iron boron; and the covering layer is magnesium oxide. According to the invention, the spin Hall angle of the SOT device is improved, and the energy consumption of the device is reduced. When a device is subjected to in-situ annealing, a sample table with an adjustable angle is used for constructing a temperature gradient to realize SOT-based magnetization overturning without in-plane field assistance, and a brand new technical route is provided for subsequent research and development of SOT-MRAM.

The present disclosure generally relates to a magnetic recording device comprising a current-in-plane (CIP) spin orbit torque (SOT) device. The SOT device comprises a topological material (TM) layer and one or more free layers. The TM layer may be recessed from the MFS, and may comprise BiSb or YPtBi. Current is configured to flow in-plane into the TM layer. In one embodiment, one or more free layers are disposed on a same surface of the TM layer. In another embodiment, one or more free layers are disposed on opposite surfaces of the TM layer. In embodiments, comprising two or more free layers, voltage outputs read from at least two of the two or more free layers are opposite, and the two free layers have opposite polarities. In another embodiment, the SOT device comprises four free layers arranged in a bridge configuration.

The present disclosure generally relates to topological semi-metal (TSM) based spin-orbit torque (SOT) devices, and methods of forming a TSM layer. The TSM layer of the SOT device comprises YPtBi having a 1:1.02:1.05 stoichiometry to a 1:1.25:1.35 stoichiometry, such as a 1:1.11:1.13 stoichiometry. The TSM layer comprising about 10% less of Y compared to Pt and Bi increases the spin Hall angle (SHA) and the spin Hall conductivity. Increasing the Pt concentration ratio to greater than 1 enhances both the SHA and the spin Hall conductivity of the TSM layer by a factor of two, and further helps increase the YPtBi surface grain size, which in turn helps improve the interface spin transparency. Increasing the Bi / Y concentration ratio to greater than 1 approaching that of Pt enhances both the resistivity of the TSM layer and the effective SHA by a factor of two.

A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a first spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the first SOT layer, forming a second SOT layer on the IMD layer, forming a first hard mask on the second SOT layer, patterning the first hard mask along a first direction, and then patterning the first hard mask along a second direction.

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

A method for fabricating a magnetoresistive random access memory (MRAM) device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, and then forming a first cap layer adjacent to the MTJ. Preferably, the first cap layer has a first thickness and a second thickness.

The invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof, and the manufacturing method of the magnetoresistive random access memory (MRAM) mainly comprises the following steps: firstly, forming a spin-orbit torque (SOT) layer on a substrate, then forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first covering layer beside the MTJ, forming a second covering layer beside the MTJ, and forming a third covering layer beside the MTJ. An ion implantation process is then performed to form a first doped region in the SOT layer and on one side of the MTJ and a second doped region in the SOT layer and on the other side of the MTJ, wherein the first doped region and the second doped region form a ring around the MTJ in a plan view.

A method for fabricating a magnetoresistive random access memory (MRAM) device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first cap layer adjacent to the MTJ, and then forming a second cap layer adjacent to the first cap layer. Preferably, a thickness of the first cap layer is greater than a thickness of the second cap layer.

A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having a (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or a combination thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or a combination thereof, where M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

A spin-orbit torque magnetoresistive random access memory (SOT MRAM) device is provided. Each SOT MRAM device uses a topological conductor (i.e., a topological metal or a topological semimetal) as both an interconnect layer and an SOT layer, which are integrated at the same metal layer. The SOT MRAM device also includes a magnetic tunnel junction (MTJ) structure contacting the SOT layer, and a contact structure contacting the MTJ structure.

A method for fabricating a magnetoresistive random access memory (MRAM) device includes the steps of first forming a spin orbit torque (SOT) layer on a substrate, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first cap layer adjacent to the MTJ, forming a first oxide layer on the first cap layer, and forming a second cap layer on sidewalls of the first oxide layer. Preferably, a top surface of the second cap layer is higher than a top surface of the MTJ.

A magnetoresistive component (100) is provided, comprising at least one magnetoresistive element (110) comprising a layer stack of ferromagnetic layers (112; 114; 116; 118) and non-magnetic layers (113; 115) stacked in a first direction. The layer stack comprises a ferromagnetic layer (112; 118) with a magnetic orientation to be switched. Adjacent to the ferromagnetic layer (112; 118), a first conductor (120-1) extends in a second direction, and a second conductor (120-2) extends in a third direction. The first and second conductors are configured to induce spin-orbit torque (SOT) in the ferromagnetic layer (112; 118). A control circuit (130) is configured to apply a first current pulse to the first conductor (120-1) and a second current pulse to the second conductor (120-2) in a temporally overlapping manner and with different time characteristics.For example, the control circuit (130) may be configured to switch off the second current pulse before the first current pulse is switched off in order to switch the magnetic orientation of the ferromagnetic layer (112; 118).

This disclosure generally relates to the design of a spin-orbit torque (SOT) differential reader. The SOT differential reader is a multi-terminal device comprising a first shield, a first spin Hall layer, a first free layer, a gap layer, a second spin Hall layer, a second free layer, and a second shield. The gap layer serves as an electrode and is disposed between the first and second spin Hall layers. Electrical lead connections are located around the first spin Hall layer, the second spin Hall layer, the gap layer, the first shield, and / or the second shield. These lead connections facilitate the flow of current from the negative lead to the positive lead and / or the voltage from the negative lead to the positive lead. The positioning of these lead connections and the positioning of the SOT differential layers improve the reader resolution without reducing the shield-to-shield spacing (i.e., the read gap).

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

A spin-orbit torque (SOT) magnetic device includes: a bottom metal layer; a first magnetic layer disposed over the bottom metal layer; a spacer layer disposed over the first magnetic layer; and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing diffusion of a metal element of the first magnetic layer into the bottom metal layer is provided between the bottom metal layer and the first magnetic layer. The embodiment of the invention also relates to a manufacturing method of a spin-orbit torque (SOT) magnetic device.

A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spin orbit torque (SOT) layer on the MTJ, a spacer adjacent to the MTJ and the first SOT layer, and a second SOT layer on the first SOT layer. Preferably, the first SOT layer and the second SOT layer are made of same material.

A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1 / f noise.

The magnetic memory device includes a spin-orbit torque (SOT)-sensing spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode, the free layer being a synthetic antiferromagnetic structure. The free layer has a magnetic moment that is tilted relative to the long axis of the MTJ stack and tilted relative to the direction in which current flows through the spin Hall electrode. A magnetic field is generated inside the MTJ stack to switch the state of the free layer. The free layer includes a first layer separated from a second layer by a spacer layer, wherein the first layer and the second layer may have the same or different crystal structures. Embodiments of the present application provide a magnetic memory device and a method for forming the same.

The invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof, and the manufacturing method of the magnetoresistive random access memory (MRAM) mainly comprises the following steps: forming a spin-orbit torque (SOT) layer on a substrate, then forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first covering layer beside the MTJ, forming a second covering layer beside the MTJ, and forming a second covering layer beside the MTJ. Forming a second covering layer beside the first covering layer, wherein the top surface of the second covering layer is lower than the top surface of the first covering layer;

A magnetoresistive memory may include a plurality of magnetoresistive memory devices, wherein each magnetoresistive device includes a fixed magnetic region, a free magnetic region, and an intermediate region disposed between the fixed and free magnetic regions. The magnetoresistive memory may include a spin-orbit-torque (SOT) channel, wherein the SOT channel is in contact with the free magnetic regions of the plurality of magnetoresistive memory devices. The magnetoresistive memory may include a write circuit configured to apply a write current through at least one magnetoresistive memory device of the plurality of magnetoresistive memory devices and the SOT channel, wherein the write current is configured to generate a short in at least one magnetoresistive memory device as a one-time programmable read-only memory (ROM) function.

A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1 / f noise.

A fabricating method of an MRAM structure includes forming a bottom electrode material layer, a reference material layer, a barrier material layer, a free material layer, and a spin orbit torque (SOT) metal layer stacked from bottom to top. The SOT metal layer, the free material layer, the barrier material layer, the reference material layer, and the bottom electrode material layer are etched to form a first memory unit and a second memory unit. A conductive line is formed between the first memory unit and the second memory unit. An SOT metal conductive line is formed to electrically connect one end of the first memory unit, one end of the conductive line, and one end of the second memory unit. A first switch element and a second switch element are respectively formed at both ends of the SOT metal conductive line.

A spin-orbit torque magnetic random-access memory (SOT-MRAM) device includes a substrate, a spin orbit torque line above the substrate, a composite-metal-oxide seed layer above the spin orbit torque line, and a magnetic tunnel junction above the composite-metal-oxide seed layer. The magnetic tunnel junction includes a free layer above the composite-metal-oxide seed layer, a main tunneling barrier layer above the free layer, and a pinned layer above the main tunneling barrier layer.

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a first spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the first SOT layer, forming a second SOT layer on the IMD layer, forming a first hard mask on the second SOT layer, patterning the first hard mask along a first direction, and then patterning the first hard mask along a second direction.

The invention discloses a magnetic random access memory unit and a forming method thereof, and a magnetic random access memory, and the memory unit comprises a spin-orbit torque layer which is used for enabling a write current to flow through when the write operation is carried out on the magnetic random access memory unit; the magnetic tunnel junction is positioned below the spin-orbit torque layer and is in contact with the spin-orbit torque layer; the first conductive structure is located on one side of the magnetic tunnel junction and located below the spin-orbit torque layer, and the first conductive structure is in contact with the spin-orbit torque layer; the second conductive structure is located on the other side of the magnetic tunnel junction and located below the spin-orbit torque layer, the second conductive structure is in contact with the spin-orbit torque layer, and the first conductive structure and the second conductive structure are used for enabling the spin-orbit torque layer to be connected with a write-in current. While the communication delay between the MRAM and the transistor is slowed down, the difficulty that the MRAM needs to stop on a spin-orbit torque layer in the process of forming the magnetic tunnel junction, the first conductive structure and the second conductive structure is also avoided.

The present embodiments relate to a PMR write-head structure where the spin-orbit torque (SOT) material is in contact with the main pole in the write gap (WG). In addition, with the write shield (WS) electrically isolated from the side shield (SS) in the present designs, the current can be confined in the SOT material near the main pole, and the device resistance can remain within a reasonable range. It can be shown, using simulations, that the main pole switching rise time can be improved by 18˜24% using spin-orbit torque from heavy metals like platinum.