Vertical spin orbit torque devices
a torque device and spin orbit technology, applied in the field of magnetic random access memories, can solve the problems of large footprint of memory cells using so torque, waste of spin current, and inefficient switching of free layer torque, etc., and achieve the effects of improving torque, enhancing the interface of spin current, and improving the performance of magnetic devices using
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[0026]The exemplary embodiments relate to magnetic junctions usable in magnetic devices, such as magnetic memories and / or logic devices, and the devices using such magnetic junctions. The magnetic memories may include magnetic random-access memories (MRAMs) and may be used in electronic devices employing nonvolatile memory. Such electronic devices include but are not limited to cellular phones, smart phones, tables, laptops and other portable and non-portable computing devices. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the exemplary embodiments and the generic principles and features described herein will be readily apparent. The exemplary embodiments are mainly described in terms of particular methods and systems provided in particular implementations. However, the methods and systems will operate effectively in ...
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