81results about "Substrate/intermediate layers" patented technology

The present disclosure generally relates to spintronic devices comprising a YPtBi layer having a (111) orientation. The spintronic stack further comprises a ferromagnetic layer and a buffer layer. The buffer layer has a (002) or (111) orientation, which promotes the (111) orientation of the YPtBi layer. The buffer layer comprises an amorphous oxide or nitride layer, an amorphous metal layer disposed on the amorphous oxide or nitride layer, a textured pre-seed layer disposed on the amorphous metal layer, and one of: a (002) hexagon or (111) fcc layer, a B2 alloy layer, or first and second bcc or B2 alloy layers.

The present disclosure generally relates to spintronic material stacks and devices. A spintronic stack comprises an amorphous layer, a texturing layer comprising one or more materials selected from the group consisting of: TaxW1-x, where x is from zero to 1, MgO, Ru, Ti, TiN, YPt, B2 alloys X—Al, where X is one of Co, Ni, Ru, Rh, or Ir, CrMo, TaxW1-x N, HfN, and TaxHf1-xN, a barrier layer comprising one or more materials selected from the group consisting of: X—AlGe, X—AlGeN, where X is one of Co, Ni, Ru, or Ir, TaxW1-xN, HfN, and TaxHf1-xN, and TiN, a YPtBi layer having a (110), (111), or (100) orientation, an interlayer, and a ferromagnetic layer. The texturing barrier layers each individually comprises a material having a high resistivity to minimize shunting, and function as a crystal symmetry transfer layer to provide the a (110), (111), or (100) orientation to the YPtBi layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having a (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or a combination thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or a combination thereof, where M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.

The magnetic element of the present embodiment includes a wiring layer and a first ferromagnetic layer in contact with the wiring layer, and the wiring layer includes a first layer of a crystal phase and a second layer of an amorphous phase between the first ferromagnetic layer and the first layer.

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

To provide a magnetoresistance effect element with a large MR ratio.SOLUTION: A magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is arranged closer to the non-magnetic layer than the second layer. The first layer contains a heusler alloy which is at least partially crystallized. The second layer includes a ferromagnetic body which is at least partially crystallized, unlike the heusler alloy. The first layer and the second layer include a first atom added. The first atom is one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.SELECTED DRAWING: Figure 1

This invention provides a nanoscale spin waveguide based on alternating magnet domain walls, belonging to the field of magnetic device technology. The device comprises, from bottom to top, a substrate, an alternating magnet thin film, and a microwave excitation source. The microwave excitation source excites an alternating magnetic field with a single frequency. The alternating magnetic field interacts with the magnetic moments of the alternating magnet thin film, causing the magnetic moments to precess. This precession is then propagated outward from the microwave excitation source in the form of a wave, forming a spin wave. By reducing the frequency of the alternating magnetic field, the spin wave propagates only within the domain walls of the alternating magnet thin film, realizing an alternating magnet domain wall spin waveguide. This invention reduces the difficulty of spin wave excitation, which is beneficial for reducing device energy consumption. Furthermore, this invention offers advantages in device miniaturization and high efficiency, and can promote the generation and development of spin wave devices based on anisotropic media, possessing broad application prospects.

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.

A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.

Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.

A magnetic-thin-film-equipped substrate 1a includes a substrate 20 and a magnetic thin film 11. A difference obtainable by subtracting a first internal stress σy of the magnetic thin film 11 from a second internal stress σx of the magnetic thin film 11 is 50 MPa or more. The first internal stress σy is an internal stress of the magnetic thin film 11 in a first direction along a surface P of the magnetic thin film 11 extending in parallel with the substrate 20. The second internal stress σx is the internal stress of the magnetic thin film 11 in a second direction parallel to the surface P and perpendicular to the first direction.

The present disclosure generally relates to spintronic devices comprising a high oxidation resistive cap layer. The spintronic stack comprises a buffer layer, a topological material (TM) layer comprising YPtBi or BiSb, an interlayer, a ferromagnetic layer, and a cap layer. The cap layer comprises a high resistance material selected from the group consisting of: (1 ) lrxHfyAlz or lrxZryAlz, where x is between about 40 at. % to about 90 at. %, y is about 0.5 at. % to about 60 at. %, and z is about 0.5 at. % to about 60 at. %; (2) ZrQX or HfQX, where X and Q are each individually selected from the group consisting of: Ru, Co, Cu, Ir, Pt, Ti, Nb, Ni, RuAI, and CoFe; (3) SixAli-xN, TixAh-xN, CrxAli-xN, and ZrxAh-xN, where x is a numeral between 0.005 and 1; and (4) nitrides of Si, Al, Ti, Cr, and Zr.

A magnetic device capable of field-free spin-orbit torque includes a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating layer positioned between the fixed ferromagnetic layer and the free ferromagnetic layer, wherein the free ferromagnetic layer includes an in-plane magnetic anisotropy ferrimagnetic layer, a perpendicular magnetic anisotropy free ferromagnetic layer, and a non-magnetic layer positioned between the in-plane magnetic anisotropy ferrimagnetic layer and the perpendicular magnetic anisotropy free ferromagnetic layer.

Provided is a ferromagnetic free layer, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the ferromagnetic free layer, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; the additive metal comprises Mo, Re or a combination thereof, and a thickness of the ferromagnetic free layer is more than or equal to 1.5 nm and less than 2.5 nm. The ferromagnetic free layer can be applied to a MTJ structure as a single layer, and has sufficient thermal stability for maintaining good magnetic properties after thermal treatment, which makes sure that the MTJ structure can exert normal recording function.

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.

To provide a thin film inductor element capable of presenting a sufficient imaginative inductor function even while reducing an operation current in the case of mounting in an electric circuit.SOLUTION: A thin film inductor element comprises a laminated layer, in which a magnetic substance layer and a non-magnetic substance layer are laminated, and a pair of electrodes. The magnetic substance layer and the non-magnetic substance layer extend in any shape in a direction orthogonal with a lamination direction. The magnetic substance layer has a substantially uniform magnetized structure containing a lamination direction component. The non-magnetic substance layer is a structure which is an insulator and of which the surface can be conducted. The pair of electrodes is provided at positioned in the vicinity of both ends, where the laminated film extends, and in contact with at least a surface of the non-magnetic substance layer. A current which is modulated in frequencies from 1 kHz to 1 GHz is applied.SELECTED DRAWING: Figure 4

The invention discloses a magnetic field adjustable spin wave excitation mode and magnetic damping magnetic material and a preparation method and application thereof. The magnetic material is Co1. 8Fe1Si1, and the crystal structure of the magnetic material is A2 or B2. The effective magnetic damping of the material is remarkably adjustable in an external magnetic field of 600-6600 Oe, and the maximum change range is 49.1 * 10 <-3 >-8.6 * 10 <-3 >; meanwhile, the number of spin wave excitation modes is increased from 3 to 5, and an MSSW mode, a Killion mode and a 1 / 2 / 3-order PSSW mode can be excited at the same time at most. The material is obtained by sequentially depositing a buffer layer and a Co1. 8Fe1Si1 alloy film on a substrate through vacuum magnetron sputtering and carrying out vacuum annealing. The magnetic material disclosed by the invention has an important application prospect in the field of reconfigurable spin electronic devices due to a spin wave excitation mode with an adjustable magnetic field and a magnetic damping characteristic.

To provide a layer structure of an MR sensor for laser annealing. In an embodiment of the present invention, a magnetoresistive sensor layer structure for laser annealing is disclosed. The magnetoresistive sensor layer structure includes a substrate, a magnetoresistive sensing unit located on the substrate and including an antiferromagnetic pinning layer or a permanent magnet bias layer, an upper heat absorbing layer located above the magnetoresistive sensing unit and / or a lower heat absorbing layer located below the magnetoresistive sensing unit, where the product of the volume, specific heat, and density of the upper absorbing layer is greater than the product of the volume, specific heat, and density of the upper electrode layer, the product of the volume, specific heat, and density of the lower absorbing layer is greater than the product of the volume, specific heat, and density of the lower electrode layer, and when the writing temperature of the antiferromagnetic pinning layer or the permanent magnet bias layer is higher than the blocking temperature or Curie temperature corresponding thereto, the temperature of the lower electrode layer and the temperature of the upper electrode layer are lower than the melting point temperature corresponding thereto, respectively, the upper heat absorbing layer and / or the lower heat absorbing layer, a laser absorbing layer, and a laser transmitting layer. The embodiment of the present invention can solve the problem that the electrode layer is easily ablated.

Bottom free layer magnetic tunnel junctions (BMTJs) and methods of fabricating the same are provided. The BMTJs include a composite metal oxide seed layer and a free layer including boron (B) on the composite metal oxide seed layer. The composite metal oxide seed layer includes a first metal layer, a metal oxide layer on the first metal layer, and a second metal layer on the metal oxide layer. The second metal layer has been oxygen treated.

The application discloses a Sm-Fe-based permanent magnetic film and a preparation method and application thereof. The Sm-Fe-based permanent magnetic film comprises a Ta buffer layer, a Sm-Fe layer and a Ta cover layer which are sequentially arranged along the thickness direction of a substrate, the Sm-Fe layer has perpendicular magnetic anisotropy, and the Sm-Fe layer comprises pure SmFe x polycrystalline film, x = 1.8-2. The preparation method comprises the following steps: sequentially depositing a Ta buffer layer, a Sm-Fe layer and a Ta cover layer on a substrate by using a magnetron sputtering technology, and performing annealing heat treatment on the obtained composite film to prepare the Sm-Fe-based permanent magnetic film. The Sm-Fe-based permanent magnetic film has excellent magnetic anisotropy in the vertical direction and has higher coercivity. The successful preparation of the good perpendicular anisotropy magnetic film has important application value in the application of micro-electro-mechanical systems, micro-electronic systems, magnetic recording materials and spin electronic devices.

A magnetoelectric spin-orbit (MESO) memory device comprises a substrate; an antiferromagnetic (AFM) magnon heterostructure above the substrate comprising: a first AFM layer; a multiferroic layer positioned above the first AFM layer; and a second AFM layer above the multiferroic layer; and a spin-orbit (S-O) metal layer above the AFM magnon heterostructure. Related methods and devices are also disclosed.

This spin inductor includes: a wiring layer; a first ferromagnetic layer which is in contact with a first surface of the wiring layer; and a second ferromagnetic layer which is in contact with a second surface of the wiring layer facing the first surface.

A spin-orbit torque (SOT) magnetic device with synthetic antiferromagnetic (SAF) structure, including a SOT layer for providing a spin current, a SAF structure composed of a first ferromagnetic layer, a nickel oxide (NiO) exchange coupling layer and a second ferromagnetic layer, and a capping layer on the SAF structure. This magnetoelectric device of oxide SAF structure can achieve zero-field switching through current-induced SOT, and can be used as the free layer of a magnetoresistive random access memory (MRAM).

The present disclosure is drawn to, among other things, a storage device. The storage device may include a magnetic tunnel junction (MTJ)-based storage array and a communication interface. The MTJ-based storage array may be configured to be damaged by a shorting voltage based on detection of a tamper event.

To provide a layer structure of an MR sensor for laser annealing. In an embodiment of the present invention, a magnetoresistive sensor layer structure for laser annealing is disclosed. The magnetoresistive sensor layer structure includes a substrate, a magnetoresistive sensing unit located on the substrate and including an antiferromagnetic pinning layer or a permanent magnet bias layer, an upper heat absorbing layer located above the magnetoresistive sensing unit and / or a lower heat absorbing layer located below the magnetoresistive sensing unit, where the product of the volume, specific heat, and density of the upper absorbing layer is greater than the product of the volume, specific heat, and density of the upper electrode layer, the product of the volume, specific heat, and density of the lower absorbing layer is greater than the product of the volume, specific heat, and density of the lower electrode layer, and when the writing temperature of the antiferromagnetic pinning layer or the permanent magnet bias layer is higher than the blocking temperature or Curie temperature corresponding thereto, the temperature of the lower electrode layer and the temperature of the upper electrode layer are lower than the melting point temperature corresponding thereto, respectively, the upper heat absorbing layer and / or the lower heat absorbing layer, a laser absorbing layer, and a laser transmitting layer. The embodiment of the present invention can solve the problem that the electrode layer is easily ablated.

The present application provides a film that can achieve a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm 2 The in-plane magnetization film has a thickness of 20 nm or more and 80 nm or less, contains 45 at% or more and 80 at% or less of the metal Co, contains 20 at% or more and 55 at% or less of the metal Pt, contains 3 vol% or more and 25 vol% or less of the oxide with respect to the entirety of the in-plane magnetization film, and has an average particle diameter in the in-plane direction of the magnetic crystal grains of 15 nm or more and 30 nm or less.

The invention relates to the technical field of magnetic stripes, and particularly discloses an invisible magnetic stripe and a preparation method and application thereof. The invisible magnetic stripe sequentially comprises a tape base, a release layer, a magnetic layer and an adhesive layer from bottom to top, and specifically limits resin used in the release layer and the magnetic layer and the dosage ratio of the resin. According to the method, specific resin is selected, the dosage proportional relation of the specific resin is determined, the arrangement structure of the invisible magnetic strip is limited, the phenomenon that the invisible magnetic strip is prone to curling due to uneven interlayer stress can be avoided, stress can be dispersed during embossed printing, coating cracking is prevented, and the prepared invisible magnetic strip is appropriate in release force, easy to strip and high in electromagnetic signal continuity.