Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

a technology of magnetic elements and ballistic magnetoresistance, which is applied in the field of magnetic memory systems, can solve the problems of high signal output, power consumption, and the probability of nearby cells being inadvertently switched, and achieve the effect of high signal outpu

Inactive Publication Date: 2005-06-23
GRANDIS
View PDF6 Cites 165 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0017] According to the system and method disclosed herein, the present invention provides a magnetic element that is preferabl

Problems solved by technology

Consequently, cross talk, power consumption, and the probability that nearby cells will be inadvertently switched may increase.
The driving circuits used to drive the current that generates the switching field could also increase in area and complexity.
This upper limit on the write current amplitude can lead to reliability issues because some cells are harder to switch than others (due to fabrication and material nonuniformity) and may fail to write

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
  • Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
  • Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention relates to an improvement in magnetic elements and magnetic memories, such as MRAM. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiment will be readily apparent to those skilled in the art and the generic principles herein may be applied to other embodiments. Thus, the present invention is not intended to be limited to the embodiment shown, but is to be accorded the widest scope consistent with the principles and features described herein.

[0029] The present invention provides a method and system for providing a magnetic element. The method and system comprise providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one chan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one channel in an insulating matrix and resides between the pinned layer and the free layer. The channel(s) are ferromagnetic, conductive, and extend through the insulating matrix between the free layer and the pinned layer. The size(s) of the channel(s) are sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer. The free layer is ferromagnetic and has a free layer magnetization. Preferably, the method and system also include providing a second pinned layer and a nonmagnetic spacer layer between the second pinned layer and the free layer. In this aspect, the magnetic element is configured to allow the free layer magnetization to be switched using spin transfer.

Description

FIELD OF THE INVENTION [0001] The present invention relates to magnetic memory systems, and more particularly to a method and system for providing an element that employs a spin transfer effect in switching and that can be used in a magnetic memory such as magnetic random access memory (“MRAM”). BACKGROUND OF THE INVENTION [0002]FIGS. 1A and 1B depict conventional magnetic elements 10 and 10′. The conventional magnetic element 1 is a spin valve 10 and includes a conventional antiferromagnetic (AFM) layer 12, a conventional pinned layer 14, a conventional nonmagnetic spacer layer 16 and a conventional free layer 18. The conventional pinned layer 14 and the conventional free layer 18 are ferromagnetic. The conventional nonmagnetic spacer layer 16 is nonmagnetic and conductive. The AFM layer 12 is used to fix, or pin, the magnetization of the pinned layer 14 in a particular direction. The magnetization of the free layer 18 is free to rotate, typically in response to an external magneti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C11/15G11C11/16H01F10/32H01F41/30H01L21/336H01L27/108H01L29/76H01L29/94H01L31/119H01L43/08H01L43/12
CPCB82Y25/00B82Y40/00G11C11/16H01F10/3227H01F10/3254H01F10/3259H01F41/305H01L43/08H01L43/12H01F10/3295H01F10/3272H10N50/10H10N50/01
Inventor HUAI, YIMING
Owner GRANDIS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap