Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

48results about How to "Stable writing" patented technology

Semiconductor memory device

A level shift element adjusting a voltage level at the time of selection of a word line according to fluctuations in threshold voltage of a memory cell transistor is arranged for each word line. This level shift element lowers a driver power supply voltage, and transmits the level-shifted voltage onto a selected word line. The level shift element can be replaced with a pull-down element for pulling down the word line voltage according to the threshold voltage level of the memory cell transistor. In either case, the selected word line voltage level can be adjusted according to the fluctuations in threshold voltage of the memory cell transistor without using another power supply system. Thus, the power supply circuitry is not complicated, and it is possible to achieve a semiconductor memory device that can stably read and write data even with a low power supply voltage.
Owner:RENESAS ELECTRONICS CORP

Liquid crystal lens element and optical head device

A liquid crystal lens element is provided, which can realize a small sized element having no moving part, and which has a lens function of switching the focal length among multiple focal lengths of at least 3 types according to an applied voltage. A liquid crystal lens element 10 is provided, which comprises a pair of transparent substrates 11 and 12 and a liquid crystal layer sandwiched between these substrates, wherein focal lengths of light transmitted through the liquid crystal 16 is changed depending on a voltage applied to the liquid crystal 16, the liquid crystal lens element 10 has a Fresnel lens-shaped concave-convex portion 17 and a liquid crystal layer 16A, and configured so that the refractive index n of the liquid crystal layer 16A changes from a refractive index n1 at a time of no application to a refractive index n2 at a time of voltage application, a refractive index ns of the concave-convex portion 17 is a value between the refractive indexes n1 and n2 and satisfies a predetermined relation, and the maximum depth d of the concave-convex portion 17 satisfies a predetermined relation, the focal length can be switched by switching an applied voltage to the liquid crystal layer 16A under the predetermined conditions.
Owner:ASAHI GLASS CO LTD

Semiconductor memory device with adjustable selected work line potential under low voltage condition

A level shift element adjusting a voltage level at the time of selection of a word line according to fluctuations in threshold voltage of a memory cell transistor is arranged for each word line. This level shift element lowers a driver power supply voltage, and transmits the level-shifted voltage onto a selected word line. The level shift element can be replaced with a pull-down element for pulling down the word line voltage according to the threshold voltage level of the memory cell transistor. In either case, the selected word line voltage level can be adjusted according to the fluctuations in threshold voltage of the memory cell transistor without using another power supply system. Thus, the power supply circuitry is not complicated, and it is possible to achieve a semiconductor memory device that can stably read and write data even with a low power supply voltage.
Owner:RENESAS ELECTRONICS CORP

Liquid crystal lens element and optical head device

A liquid crystal lens element having a lens function is provided, which is small sized without having moving part, and which can stably carry out correction of spherical aberration containing a power component corresponding to focal point change of incident light. A liquid crystal lens element which changes a focal length of light transmitted through a liquid crystal 16 according to the magnitude of the voltage applied to the liquid crystal 16 sandwiched between a pair of transparent substrates 11 and 12, which comprises transparent electrodes 13 and 14 provided on the respective transparent substrates 11 and 12 for applying a voltage for the liquid crystal 16, and a concave-convex portion 17 having a saw-tooth-shaped cross-sectional shape having a rotational symmetry about an optical axis and formed on one surface of the transparent electrode 13 with a transparent material, wherein at least concave portions of the concave-convex portion 17 are filled with the liquid crystal 16 so as to change the substantial refractive index of the liquid crystal 16 according to the magnitude of applied voltage.
Owner:ASAHI GLASS CO LTD

Liquid crystal lens element and optical head device

A liquid crystal lens element having a lens function is provided, which is small sized without having moving part, and which can stably carry out correction of spherical aberration containing a power component corresponding to focal point change of incident light.A liquid crystal lens element which changes a focal length of light transmitted through a liquid crystal 16 according to the magnitude of the voltage applied to the liquid crystal 16 sandwiched between a pair of transparent substrates 11 and 12, which comprises transparent electrodes 13 and 14 provided on the respective transparent substrates 11 and 12 for applying a voltage for the liquid crystal 16, and a concave-convex portion 17 having a saw-tooth-shaped cross-sectional shape having a rotational symmetry about an optical axis and formed on one surface of the transparent electrode 13 with a transparent material, wherein at least concave portions of the concave-convex portion 17 are filled with the liquid crystal 16 so as to change the substantial refractive index of the liquid crystal 16 according to the magnitude of applied voltage.
Owner:ASAHI GLASS CO LTD

Method for recording magnetic information and magnetic recording system

Stable writing is performed in a super high density hard disk where writing by magnetic field is difficult. A layered thin film structure including at least a magnetic metallic layer / a non-magnetic metallic layer / a magnetic metallic layer is formed, and a metallic probe is brought close to this multilayer film on the order of nano-meters. A quantum well state created in the multilayer film is changed by applying a voltage between the metallic probe and the multilayer film, resulting in a relative magnetic field between the magnetic metallic layers being changed. At this time, an assistance magnetic field is applied in the writing magnetization direction.
Owner:HITACHI LTD

Method for recording magnetic information and magnetic recording system

Stable writing is performed in a super high density hard disk where writing by magnetic field is difficult. A layered thin film structure including at least a magnetic metallic layer / a non-magnetic metallic layer / a magnetic metallic layer is formed, and a metallic probe is brought close to this multilayer film on the order of nano-meters. A quantum well state created in the multilayer film is changed by applying a voltage between the metallic probe and the multilayer film, resulting in a relative magnetic field between the magnetic metallic layers being changed. At this time, an assistance magnetic field is applied in the writing magnetization direction.
Owner:HITACHI LTD

Content addressable memory (CAM) cell bit line architecture

A ternary content addressable memory (TCAM) cell (100) can include two memory elements (102-0 and 102-1) with a single bit line (106-0 and 106-1) per memory element. A TCAM cell (100) can also include a compare stack (104) and two word lines (114 and 116) that can connect to each memory element (102-0 and 102-1). The memory elements (102-0 and 102-1) can include SRAM type memory cells with one of two data terminals connected to a pre-write potential (Vpre, which can be a ground potential, or the like). Write operations can include pre-setting the data values of memory elements (102-0 and 102-1) to the pre-write potential prior to providing write data via the bit lines (106-0 and 106-1).
Owner:AVAGO TECH INT SALES PTE LTD

Apparatus and method for recording information

A vertical magnetic recording apparatus is provided which can diminish thermal decay of magnetization to ensure a high reliability of the life of recorded information and which can stably effect the write of magnetic information. Light assist is performed by obliquely applying light to a gap between a main pole of a vertical recording head and a medium. The light is radiated from the head side of the apparatus with respect to the medium. Utilizing the present invention, the thermal decay of magnetization at room temperature is diminished, the life of the recorded information is increased, and the storage reliability of the disk is increased.
Owner:HITACHI LTD

Magnetoresistive element, magnetic memory cell, and magnetic memory device

The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that the area of a cross section orthogonal to the circumferential direction of a pair of magnetic yokes becomes the smallest in connection parts facing stacked bodies. With the configuration, magnetic flux density of return magnetic fields generated by passing write current to write bit lines and write word lines can be made the highest in the connection parts. Thus, information can be written efficiently and stably.
Owner:TDK CORPARATION

Magnetoresistive element, magnetic memory cell, and magnetic memory device

The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that the area of a cross section orthogonal to the circumferential direction of a pair of magnetic yokes becomes the smallest in connection parts facing stacked bodies. With the configuration, magnetic flux density of return magnetic fields generated by passing write current to write bit lines and write word lines can be made the highest in the connection parts. Thus, information can be written efficiently and stably.
Owner:TDK CORPARATION

Magnetoresistive element including a yoke that surrounds a conductor, magnetic memory cell and magnetic memory device including the same

The present invention provides a magnetic memory device capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in write lines and having a high degree of flexibility in designing. A magneto-resistive element has: a magnetic yoke disposed annularly in a circumferential direction so as to surround a write word line and a write bit line, and having a pair of open ends facing each other while sandwiching a gap provided in a part in the circumferential direction; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field and a pair of end faces. The stacked body is disposed in the gap so that each of the pair of end faces and each of the pair of open ends face each other. With the configuration, magnetization of the second magnetic layer can be efficiently inverted and, as compared with the case where the stacked body and the magnetic yoke are in contact with each other, the material of the stacked body can be selected from a wider range and the magnetic and electric performances of the stacked body can be sufficiently displayed.
Owner:TDK CORPARATION

Straight liquid type water isolator

The invention provides a straight liquid type water isolator. The straight liquid type water isolator comprises an outer circular wall, a bottom circular wall, a plurality of parallel water isolation layers and a connecting column. At least one groove is formed in the surface of the connecting column. The water isolation layers are arranged between the outer circular wall and the bottom circular wall. The connecting column is connected with the outer circular wall and the bottom circular wall and penetrates the multiple water isolation layers. An ink storage structure formed by the straight liquid type water isolator divides ink layer by layer. Compared with a roll-packing core ink storage structure, the straight liquid type water isolator is more stable and more superior in performance. According to a gel pen with the straight liquid type water isolator, the ink filling amount can be increased multiply, the writing length of the product can be greatly increased, all indexes are higher than the requirements of the national standard and the industry standard, and writing with the product is stable all the time.
Owner:SHANGHAI M&G STATIONERY INC

Optical biological detection method based on tri-doped lithium niobate crystal

The invention discloses an optical biological detection method based on tri-doped lithium niobate crystal. The optical biological method comprises the steps of: forming a waveguide grating substrate base on the tri-doped lithium niobate crystal, forming a waveguide on the substrate, forming a holographic bragg grating on the waveguide, forming a biological recognition molecule on the holographic bragg grating, forming a target molecule on the biological recognition molecule, forming waveguide grating reflection light wavelength change on the target molecule, and forming biomolecule concentration on the waveguide grating reflection light wavelength change. The method has the characteristic of full-gloss fast writing in a non-volatile holographic grating, and simultaneously realizes low cost, and high-precision, multi-flux, quick quantitative detection of the biological molecule, is applicable to quantitatively detecting micro concentration of harmful components, pesticide residue, narcotics and the like in the food, and has an extensive market prospect.
Owner:TAIYUAN UNIV OF TECH

Magnetic memory cell, magnetic memory device, and magnetic memory device manufacturing method

The present invention provides a magnetic memory device capable of reducing a loss of a magnetic field generated by currents flowing in a write line and performing writing stably, and a magnetic memory cell mounted on the magnetic memory device. Further, the invention provides a method for easily manufacturing such a magnetic memory device. A magnetic memory cell includes: stacked bodies each including a magneto-sensitive layer whose magnetization direction changes according to an external magnetic field, and constructed so that current flows in a direction perpendicular to a stack layer surface; and a toroidal magnetic layer disposed between the first and second stacked bodies so that the direction along the stack layer surface is set as an axial direction, and constructed so as to be penetrated by a plurality of conductors along the axial direction. Thus, strength reduction in a circulating magnetic field generated in a toroidal magnetic layer can be suppressed, and the magnetization direction of a magneto-sensitive layer in each of the first and second stacked bodies can be inverted by a smaller write current.
Owner:TDK CORPARATION

Magnetic memory cell and magnetic memory device

InactiveUS20080175044A1Large current densityCarry-out stablyRead-only memoriesDigital storageMagnetic memoryMagnetic reluctance
The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.
Owner:HITACHI LTD +1

Content addressable memory (CAM) cell bit line architecture

InactiveUS7307861B1Stable writingLow charge consumption advantagesDigital storageMemory systemsComputer hardwareBit line
A ternary content addressable memory (TCAM) cell (100) can include two memory elements (102-0 and 102-1) with a single bit line (106-0 and 106-1) per memory element. A TCAM cell (100) can also include a compare stack (104) and two word lines (114 and 116) that can connect to each memory element (102-0 and 102-1). The memory elements (102-0 and 102-1) can include SRAM type memory cells with one of two data terminals connected to a pre-write potential (Vpre, which can be a ground potential, or the like). Write operations can include pre-setting the data values of memory elements (102-0 and 102-1) to the pre-write potential prior to providing write data via the bit lines (106-0 and 106-1).
Owner:AVAGO TECH WIRELESS IP SINGAPORE PTE

Mobile English teaching blackboard with dust collection function

A mobile English teaching blackboard with a dust-absorbing function, comprising a board body, two supporting boards are fixedly connected to the lower side of the board body, two rollers are fixedly connected to the lower side of the supporting boards, and the two supporting boards A base plate is fixedly connected between the bottoms, a support column is fixedly connected to the center of the base plate, and the top of the support column is fixedly connected to the lower side of the plate body. A vertical through hole is opened in the support column, and the cross section of the vertical through hole is rectangular. A rack is arranged in the vertical through hole, and the teeth on the rack are arranged to the right. The bottom end of the rack is fixedly connected with a mounting plate, and stabilizing blocks are fixedly connected around the lower side of the mounting plate; the right side of the support column The wall is provided with a vertical moving slot, the right side of the rack is meshed with a gear, the middle of the gear is fixedly connected with a rotating shaft, and the front and rear sides of the support plate are fixedly connected with baffles. The invention has the advantages of reasonable structural design, convenient use and the mutual conversion between blackboard writing and moving states, and has certain popularization and application value.
Owner:龙里县逸轩生产力促进中心

Novel magnetic tunnel junction device and magnetic random access memory

A magnetic tunnel junction device and a magnetic random access memory based on a synthetic antiferromagnetic pinned layer are disclosed, relating to a multilayer structure which is suitable for a pinned layer, namely a synthetic antiferromagnetic device. Antiferromagnetic coupling of the synthetic antiferromagnetic device can be enhanced by electric field. The synthetic antiferromagnetic device can be used as a pinned layer of the magnetic tunnel junction, and the antiferromagnetic coupling is enhanced under the electric field to ensure that a ferromagnetic layer, which is close to a barrier layer, of the pinned layer will not be switched, thereby achieving stable data writing. The magnetic random access memory is formed by the magnetic tunnel junction based on the synthetic antiferromagnetic pinned layer, has advantages such as, high density, low power consumption, high speed, radiation resistance and non-volatility.
Owner:XI AN JIAOTONG UNIV

Card writing method of intelligent card personalized equipment and card writing mechanism for implementing method

The invention relates to a card writing method of intelligent card personalized equipment and a card writing mechanism for implementing the method. Fixed writing head groups are arranged on both the upper and lower sides of a card passing channel; a liftable cache card slot group arranged on one side of each fixed writing head group; through the driving of a listing driving mechanism, the cache card slot groups lift between the fixed writing heads on the upper and lower sides in a reciprocation manner, so as to cache each group of blank intelligent cards on the card passing channel or each group of intelligent cards, the card writing of which is completed by the fixed writing heads on the upper and lower sides; card push devices are arranged on both the upper and lower sides of the card passing channel; and through the driving of a translation driving mechanism, the card push devices move between the fixed writing head groups and the cache card slot groups in a reciprocation manner, so as to simultaneously push a group of blank intelligent cards cached in the cache card slot groups into the fixed writing head groups, or simultaneously push a group of intelligent cards, the card writing of which is completed in the fixed writing head groups into the cache card slot groups. According to the method, when a fixed writing head group enters or exits a card, the other group can carry out card writing normally, so that the working efficiency of equipment is improved.
Owner:SHENZHEN PIOTEC TECH CO LTD

Plasma display panel

A plasma display panel has a first substrate, plural pairs of display electrodes, a second substrate, and plural data electrodes. Each pair of the display electrodes is made up of a scanning electrode and a sustain electrode which are arranged parallel to each other on the first substrate. The second substrate is disposed opposite to the first substrate. A discharge space is formed between the first substrate and second substrate. The data electrodes are arranged in a direction perpendicular to the display electrodes on the second substrate. The data electrode is wider in peripheral portion of the second substrate than in a central portion of the second substrate.
Owner:PANASONIC CORP

Finely-adjustable anti-reflective blackboard

InactiveCN104476953AImprove classroom teaching effectAchieve regulationWriting boardsTurn angleLight reflection
The invention relates to a finely-adjustable anti-reflective blackboard. The finely-adjustable anti-reflective blackboard comprises two blackboards which are connected together through a hinge and are movably arranged in a blackboard frame, wherein fine adjustment mechanisms are arranged at the outer edges of back face plates of the blackboards; cranking hand wheels of the fine adjustment mechanisms drive sleeves to turn, meanwhile, spring devices are contracted, the sleeves drive bevel gear groups, the bevel gear groups drive cams to move, the blackboards are jacked up by the cams, and fine adjustment or the change of positions of reflective areas of the blackboards is realized, so that the avoidance of light reflection is realized; after a proper angle is obtained through adjusting, the cranking hand wheels are released and return under the action of springs, self-locking mechanisms are enabled to be in a locked state, and the reverse self-locking of the blackboards is realized. According to the finely-adjustable anti-reflective blackboard, when visual sense is affected due to lighting changes of a classroom, a turning angle of the blackboard can be appropriately adjusted to remove light reflection, the utilization ratio of the blackboard is greatly increased, and the manufacturing cost is low.
Owner:XI'AN PETROLEUM UNIVERSITY

Magnetic memory device and method of manufacturing magnetic memory device

The present invention provides a magnetic memory device capable of stably writing information by efficiently using a magnetic field generated by current flowing in a conductor, which can be manufactured more easily, and a method of manufacturing the magnetic memory device. The method includes: a stacked body forming step of forming a pair of stacked bodies S20a and S20b on a substrate 31; a lower yoke forming step of forming a lower yoke 4B so as to cover at least the pair of stacked bodies S20a and S20b; and a write line forming step of simultaneously forming a pair of first parts 6F and write bit lines 5a and 5b so as to be disposed adjacent to each other in a first level L1 via an insulating film 7A as a first insulating film on the lower yoke 4B. Thus, the manufacturing process can be more simplified.
Owner:TDK CORPARATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products