48results about How to "Stable writing" patented technology

A level shift element adjusting a voltage level at the time of selection of a word line according to fluctuations in threshold voltage of a memory cell transistor is arranged for each word line. This level shift element lowers a driver power supply voltage, and transmits the level-shifted voltage onto a selected word line. The level shift element can be replaced with a pull-down element for pulling down the word line voltage according to the threshold voltage level of the memory cell transistor. In either case, the selected word line voltage level can be adjusted according to the fluctuations in threshold voltage of the memory cell transistor without using another power supply system. Thus, the power supply circuitry is not complicated, and it is possible to achieve a semiconductor memory device that can stably read and write data even with a low power supply voltage.

A liquid crystal lens element having a lens function capable of stably correcting spherical aberration containing a power component corresponding to focus change of incident light according to the magnitude of applied voltage.The liquid crystal lens element comprises a pair of transparent substrates 11 and 12, one (12) of the transparent electrodes is provided with a transparent electrode 15 and a Fresnel lens surface 17, and the other one (11) of the pair of transparent electrodes is provided with a phase correction surface 18 and a transparent electrode 16. Thus, by disposing a Fresnel lens surface 17 and a liquid crystal layer 13 between a pair of transparent electrodes 15 and 16, it becomes possible to change substantial refractive index distribution of the liquid crystal layer 13 according to the magnitude of applied voltage, and to add a positive or negative power to a wavefront transmitted through the liquid crystal layer 13, the Fresnel lens surface 17 and the phase correction surface 18.

A liquid crystal lens element having a lens function is provided, which is small sized without having moving part, and which can stably carry out correction of spherical aberration containing a power component corresponding to focal point change of incident light.A liquid crystal lens element which changes a focal length of light transmitted through a liquid crystal 16 according to the magnitude of the voltage applied to the liquid crystal 16 sandwiched between a pair of transparent substrates 11 and 12, which comprises transparent electrodes 13 and 14 provided on the respective transparent substrates 11 and 12 for applying a voltage for the liquid crystal 16, and a concave-convex portion 17 having a saw-tooth-shaped cross-sectional shape having a rotational symmetry about an optical axis and formed on one surface of the transparent electrode 13 with a transparent material, wherein at least concave portions of the concave-convex portion 17 are filled with the liquid crystal 16 so as to change the substantial refractive index of the liquid crystal 16 according to the magnitude of applied voltage.

Stable writing is performed in a super high density hard disk where writing by magnetic field is difficult. A layered thin film structure including at least a magnetic metallic layer / a non-magnetic metallic layer / a magnetic metallic layer is formed, and a metallic probe is brought close to this multilayer film on the order of nano-meters. A quantum well state created in the multilayer film is changed by applying a voltage between the metallic probe and the multilayer film, resulting in a relative magnetic field between the magnetic metallic layers being changed. At this time, an assistance magnetic field is applied in the writing magnetization direction.

The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that the area of a cross section orthogonal to the circumferential direction of a pair of magnetic yokes becomes the smallest in connection parts facing stacked bodies. With the configuration, magnetic flux density of return magnetic fields generated by passing write current to write bit lines and write word lines can be made the highest in the connection parts. Thus, information can be written efficiently and stably.

A writing method for an optical disc to optimize a writing speed, wherein a spiral track on the optical disc is divided into a plurality of zones, and different CLV writing speeds are used for performing a ZCLV writing to the zones respectively. The writing method comprises steps of: setting a plurality of writing modes; storing a plurality of zone parameter sets for the writing modes respectively in a memory, wherein each of the zone parameter sets comprises dividing times for dividing the zones, and the different CLV writing speeds for the zone respectively; determining a disc type of the optical disc by a disc type determining device before the ZCLV writing is performed; selecting one of the zone parameter sets that is suitable to the disc type of the optical disc; and performing the ZCLV writing with the writing mode corresponding to the selected zone parameter set.

The invention is to obtain a glass substrate for information recording disk with satisfactory circular ring strength through minimizing of polished depth at chemical polishing without performing any chemical strengthening treatment. The surface roughness of the edge face of inner circumferential portion of a doughnut-shaped glass substrate for magnetic disk is regulated by mechanical polishing to 9 nm or less in terms of Rmax. Subsequently, the edge face of inner circumferential portion is subjected to chemical polishing so that the surface layer thereof as much as 2 [mu]m or more is polished off. By such unprecedented mirror finish of the surface roughness of the edge face of inner circumferential portion through mechanical polishing, a satisfactory circular ring strength can be attained even when the polished depth at chemical polishing is reduced to less than in the prior art. The polished depth of less than 5 [mu]m is satisfactory.

The present invention provides a magnetic memory device capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in write lines and having a high degree of flexibility in designing. A magneto-resistive element has: a magnetic yoke disposed annularly in a circumferential direction so as to surround a write word line and a write bit line, and having a pair of open ends facing each other while sandwiching a gap provided in a part in the circumferential direction; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field and a pair of end faces. The stacked body is disposed in the gap so that each of the pair of end faces and each of the pair of open ends face each other. With the configuration, magnetization of the second magnetic layer can be efficiently inverted and, as compared with the case where the stacked body and the magnetic yoke are in contact with each other, the material of the stacked body can be selected from a wider range and the magnetic and electric performances of the stacked body can be sufficiently displayed.

The present invention provides a magnetic memory device capable of reducing a loss of a magnetic field generated by currents flowing in a write line and performing writing stably, and a magnetic memory cell mounted on the magnetic memory device. Further, the invention provides a method for easily manufacturing such a magnetic memory device. A magnetic memory cell includes: stacked bodies each including a magneto-sensitive layer whose magnetization direction changes according to an external magnetic field, and constructed so that current flows in a direction perpendicular to a stack layer surface; and a toroidal magnetic layer disposed between the first and second stacked bodies so that the direction along the stack layer surface is set as an axial direction, and constructed so as to be penetrated by a plurality of conductors along the axial direction. Thus, strength reduction in a circulating magnetic field generated in a toroidal magnetic layer can be suppressed, and the magnetization direction of a magneto-sensitive layer in each of the first and second stacked bodies can be inverted by a smaller write current.

The present invention provides a magnetic memory device capable of performing stable operation efficiently using a magnetic field generated by write current and formed with high precision while realizing a compact configuration. Since a plating film is used for at least a part of a magnetic yoke, as compared with the case of formation by a dry film forming method, sufficient thickness and higher dimensional precision can be obtained. Consequently, a more stabilized return magnetic field can be generated and high reliability can be assured. Neighboring memory cells can be disposed at narrower intervals, so that the invention is suitable for realizing higher integration and higher packing density.

The present invention provides a instrument pen cap for writing which improves buffering effect and prevents generating pen cocoon as well as makes the writing tool insert easily and increases the cling degree with the writing tool, thus implement writing stably. In the pen cap 1 which suits on the axis of the writing tool P and possesses cylinder-shape spring pen cap main body 2,many small independent warts 3 intersperses on the internal circle surface 2a of the given spring pen cap main body2.

A mobile English teaching blackboard with a dust-absorbing function, comprising a board body, two supporting boards are fixedly connected to the lower side of the board body, two rollers are fixedly connected to the lower side of the supporting boards, and the two supporting boards A base plate is fixedly connected between the bottoms, a support column is fixedly connected to the center of the base plate, and the top of the support column is fixedly connected to the lower side of the plate body. A vertical through hole is opened in the support column, and the cross section of the vertical through hole is rectangular. A rack is arranged in the vertical through hole, and the teeth on the rack are arranged to the right. The bottom end of the rack is fixedly connected with a mounting plate, and stabilizing blocks are fixedly connected around the lower side of the mounting plate; the right side of the support column The wall is provided with a vertical moving slot, the right side of the rack is meshed with a gear, the middle of the gear is fixedly connected with a rotating shaft, and the front and rear sides of the support plate are fixedly connected with baffles. The invention has the advantages of reasonable structural design, convenient use and the mutual conversion between blackboard writing and moving states, and has certain popularization and application value.

The invention relates to a card writing method of intelligent card personalized equipment and a card writing mechanism for implementing the method. Fixed writing head groups are arranged on both the upper and lower sides of a card passing channel; a liftable cache card slot group arranged on one side of each fixed writing head group; through the driving of a listing driving mechanism, the cache card slot groups lift between the fixed writing heads on the upper and lower sides in a reciprocation manner, so as to cache each group of blank intelligent cards on the card passing channel or each group of intelligent cards, the card writing of which is completed by the fixed writing heads on the upper and lower sides; card push devices are arranged on both the upper and lower sides of the card passing channel; and through the driving of a translation driving mechanism, the card push devices move between the fixed writing head groups and the cache card slot groups in a reciprocation manner, so as to simultaneously push a group of blank intelligent cards cached in the cache card slot groups into the fixed writing head groups, or simultaneously push a group of intelligent cards, the card writing of which is completed in the fixed writing head groups into the cache card slot groups. According to the method, when a fixed writing head group enters or exits a card, the other group can carry out card writing normally, so that the working efficiency of equipment is improved.

A plasma display panel has a first substrate, plural pairs of display electrodes, a second substrate, and plural data electrodes. Each pair of the display electrodes is made up of a scanning electrode and a sustain electrode which are arranged parallel to each other on the first substrate. The second substrate is disposed opposite to the first substrate. A discharge space is formed between the first substrate and second substrate. The data electrodes are arranged in a direction perpendicular to the display electrodes on the second substrate. The data electrode is wider in peripheral portion of the second substrate than in a central portion of the second substrate.

The present application relates to a liquid crystal lens element and an optical head device, in particular order, to a liquid crystal lens capable of switching the focal length among a plurality of different focal lengths according to switching of applied voltage among a plurality of applied voltages, and an optical head device employing the liquid crystal lens, for writing and / or reading an information to / from an optical recording medium.

The present invention provides a magnetic memory device capable of stably writing information by efficiently using a magnetic field generated by current flowing in a conductor, which can be manufactured more easily, and a method of manufacturing the magnetic memory device. The method includes: a stacked body forming step of forming a pair of stacked bodies S20a and S20b on a substrate 31; a lower yoke forming step of forming a lower yoke 4B so as to cover at least the pair of stacked bodies S20a and S20b; and a write line forming step of simultaneously forming a pair of first parts 6F and write bit lines 5a and 5b so as to be disposed adjacent to each other in a first level L1 via an insulating film 7A as a first insulating film on the lower yoke 4B. Thus, the manufacturing process can be more simplified.