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Magnetic structure based on antiferromagnet fixing layer, and SOT-MRAM

An artificial antiferromagnetic and magnetic structure technology, which is applied in the direction of magnetic field controlled resistors, material selection, static memory, etc., can solve the problems of high write current density and limit the arrangement density of memory cell arrays, so as to improve the arrangement density , fast writing response speed, and the effect of reducing the device volume

Active Publication Date: 2019-04-02
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
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Problems solved by technology

However, the write current density of this SOT-MRAM is still very high, which limits the arrangement density of the memory cell array.

Method used

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  • Magnetic structure based on antiferromagnet fixing layer, and SOT-MRAM
  • Magnetic structure based on antiferromagnet fixing layer, and SOT-MRAM
  • Magnetic structure based on antiferromagnet fixing layer, and SOT-MRAM

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Embodiment Construction

[0038] The technical solutions of the present invention will be described in detail below with reference to the accompanying drawings and embodiments. The following embodiments relate to a magnetic random access memory that enhances the antiferromagnetic coupling of artificial antiferromagnetic devices through electric field regulation, but does not constitute any basis for limiting the present invention.

[0039] figure 1 is our research result, which shows the change of the antiferromagnetic coupling strength J when the artificial antiferromagnetic device is regulated by voltage. When the ferromagnetic layer is [Pt(0.88nm)|Co(0.70nm)] 2 , the degree of interface disorder is 0.5, and the thickness of Ru is 0.66nm, the artificial antiferromagnetic device has a relatively weak antiferromagnetic coupling in the initial state, and it can be transformed into a strong antiferromagnetic coupling when the applied electric field is increased to 4V coupling. It can be seen from the f...

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Abstract

The invention discloses a magnetic structure based on an artificial antiferromagnet fixing layer, and a spin-orbit torque magnetic random access memory SOT-MRAM. The magnetic structure comprises a magnetic tunnel junction of a fixing layer that is regulated and controlled by an electric field and is based on an artificial antiferromagnet device and a spin-orbit torque material layer, wherein the fixing layer based on the artificial antiferromagnet device can achieve antiferromagnet coupling enhancement through the regulation and control of the electric field. The device can realize the stablewriting of data under the coaction of the electric field and current, has a simple structure, and has the advantages of high density, low power consumption, high speed, radiation resistance and non-volatility.

Description

technical field [0001] The present invention relates to circuits and devices with magnetic / ferromagnetic materials or structures and applications thereof, more specifically, to a fixed layer based on an artificial antiferromagnetic device regulated by an electric field and a device for data erasing and writing using spin-orbit moments Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM). Background technique [0002] Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) is composed of two magnetic metal layers and an ultra-thin insulating layer sandwiched between them. If a bias voltage is applied between the two magnetic metal layers, since the insulating layer is very thin, electrons can pass through its potential barrier through the tunneling effect. Under a given bias voltage, the size of the tunneling current / tunneling resistance depends on the relative orientation of the magnetization in the two ferromagnetic layers (parallel or antiparallel, corresponding to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/06H01L43/10G11C11/16H10N50/10H10N52/00
CPCG11C11/161H10N52/00H10N50/10H10N50/85
Inventor 闵泰周学松周雪王蕾
Owner XI AN JIAOTONG UNIV
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