Spin-orbit torque magnetic random access memory (SOT-MRAM) without external magnetic field

A technology of spin-orbit and magnetic memory, which is applied in the fields of magnetic field-controlled resistors, static memory, digital memory information, etc. It can solve the problems of high write current, hinder the development of miniaturization, and affect the nano-processing technology, etc., and achieve the goal of writing Fast input speed, low power consumption, and improved SOT efficiency

Active Publication Date: 2015-03-04
致真存储(北京)科技有限公司
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Problems solved by technology

However, the current writing of SOT-MRAM requires an external magnetic field to determine the magnetization switching polarity of its fre

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  • Spin-orbit torque magnetic random access memory (SOT-MRAM) without external magnetic field
  • Spin-orbit torque magnetic random access memory (SOT-MRAM) without external magnetic field
  • Spin-orbit torque magnetic random access memory (SOT-MRAM) without external magnetic field

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Embodiment Construction

[0031] The substantive features of the present invention are further described with reference to the accompanying drawings. Accompanying drawing is schematic diagram. The thicknesses of the various functional layers or regions involved are not actual dimensions, and the resistance and voltage values ​​in the working mode are also not actual values.

[0032] Detailed exemplary embodiments are disclosed herein, specific structural and functional details thereof are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is to be construed as being limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0033] The present invention proposes a novel SOT-MTJ structure in a novel spin-orbit momentum moment magnetic memory that does not require an external magnetic f...

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Abstract

Disclosed is a spin-orbit torque magnetic random access memory (SOT-MRAM) without an external magnetic field. The spin-orbit torque magnetic tunneling junction(SOT-MTJ) of the random access memory is based on perpendicular magnetic anisotropy, apart from comprising an anti-parallel layer, a tunneling barrier layer, a reference layer and an antiferromagnetc metal layer in a conventional MTJ structure, is also additionally provided with a nonferromagnetic metal layer, optimizes the material of the antiferromagnetc metal layer and improves the shape of the tunneling barrier layer; and the SOT-MTJ structure is successively provided with seven layers which are respectively a bottom electrode, the nonferromagnetic metal layer, a first ferromagnetic metal layer, i.e., the anti-parallel layer, a wedge tunneling barrier layer, a second ferromagnetic metal layer, i.e., the reference layer, the antiferromagnetc metal layer and a top electrode from the bottom to the top. According to the invention, writing operation can be carried out without the external magnetic field. Compared to a conventional SOT-MRAM, the energy consumption is smaller, and the geometric ratio micro-shrink performance reduced along with a technical node is more excellent.

Description

technical field [0001] The invention relates to a spin-orbit torque (Spin-Orbit Torque, referred to as SOT) magnetic memory without an external magnetic field, which includes a new type of magnetic tunnel junction (Magnetic Tunnel Junction, referred to as MTJ) that changes the resistance state of the storage device based on the SOT The structure, namely SOT-MTJ, belongs to the field of non-volatile memory technology. Background technique [0002] The core storage part of traditional magnetic random access memory (MRAM for short) is the magnetic tunnel junction MTJ, which is a two-port structure device composed of multilayer films. Its core consists mainly of three thin films, with two ferromagnetic layers separated by a tunneling barrier layer. The magnetization direction of one of the ferromagnetic layers is fixed and is called the reference layer; the magnetization direction of the other ferromagnetic layer can be changed to be parallel to the reference layer (Parallel, r...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/02H01L43/10G11C11/16
CPCG11C11/18G11C11/161G11C11/1653G11C11/1659G11C11/1675
Inventor 张博宇郭玮张雨赵巍胜
Owner 致真存储(北京)科技有限公司
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