Disclosed is a spin-orbit torque magnetic random access memory (SOT-MRAM) without an external magnetic field. The spin-orbit torque magnetic tunneling junction(SOT-MTJ) of the random access memory is based on perpendicular magnetic anisotropy, apart from comprising an anti-parallel layer, a tunneling barrier layer, a reference layer and an antiferromagnetc metal layer in a conventional MTJ structure, is also additionally provided with a nonferromagnetic metal layer, optimizes the material of the antiferromagnetc metal layer and improves the shape of the tunneling barrier layer; and the SOT-MTJ structure is successively provided with seven layers which are respectively a bottom electrode, the nonferromagnetic metal layer, a first ferromagnetic metal layer, i.e., the anti-parallel layer, a wedge tunneling barrier layer, a second ferromagnetic metal layer, i.e., the reference layer, the antiferromagnetc metal layer and a top electrode from the bottom to the top. According to the invention, writing operation can be carried out without the external magnetic field. Compared to a conventional SOT-MRAM, the energy consumption is smaller, and the geometric ratio micro-shrink performance reduced along with a technical node is more excellent.