42results about How to "High density storage" patented technology

Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr_1-XCa_XMnO₃ (PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.

A material handling system for placing and retrieving palletized loads in densely spaced storage areas utilizing an overhead bridge crane connected to a pallet load handling device by way of lifting cables and a stabilizing mast assembly. The pallet handling devices may include vertically or horizontally movable pallet engaging fork mechanisms mounted on a generally rectangular frame which is operable to be lowered over a pallet load and engaged therewith by way of the fork mechanisms. The pallet handling device frame may be split and interconnected by actuator mechanisms to facilitate ease of placing the handling devices over a pallet load and releasing the load from the handling device.

In a memory device and a method of forming the same, in one embodiment, the memory device comprises a substrate and a bit line on the substrate extending in a first direction. A first word line structure is provided on the bit line and spaced apart from, and insulated from, the bit line, the first word line structure extending in a second direction transverse to the first direction. An electrode is coupled to the bit line extending over the first word line structure and spaced apart from the first word line structure by a first gap. A second word line structure is over the electrode and spaced apart from the electrode by a second gap, the second word line structure extending in the second direction. The electrode is cantilevered between the first word line structure and the second word line structure such that the electrode deflects to be electrically coupled with a top portion of the first word line structure through the first gap in a first bent position and deflects to be electrically coupled with a bottom portion of the second word line structure through the second gap in a second bent position, and is isolated from the first word line structure and the second word line structure in a rest position.

The invention discloses a multilayer multichannel first-in first-out (FIFO) pallet for pallet chain conveyors, comprising a pallet frame. The pallet frame is internally provided with a plurality of linear conveying channels; the conveying channel openings are arrayed into a latticed shape; and each conveying channel is provided with a plurality of pallet chain conveyors in the conveying direction, wherein the pallet chain conveyors are fixed on the pallet frame and connected end to end. About 30 conveying channel openings can be arranged in the height direction of the front side of a pallet storage, the number of the conveying channel openings in the width direction can not be restricted, and the number of goods positions in the length direction of the conveying channels can not be restricted as required, thus the high-density storage is realized. The pallet chain conveyors which are connected end to end in the conveying channels can realize high-frequency storage and fetch.

The invention provides a titanium-antimony-tellurium phase-changing material depositing method and a preparation method of a phase-changing storage unit. The titanium-antimony-tellurium phase-changing material depositing method includes: depositing a Ti precursor which comprises one or more than one of (R1)4Ti, (R1R2N)4Ti, (R1O)4Ti, ((R1)3Si)4Ti and TiM4, wherein R1 and R2 are linear chains, branched chains or annular alkyls containing 1-10 carbons, and M is Cl, F or Br; depositing a Te precursor which comprises one or more than one of (R1)2Te, (R1R2N)2Te and ((R1)3Si)2Te, wherein R is selected from a linear chain, a branched chain or an annular alkyl or alkenyl containing 1-10 carbons; and depositing Sb precursors which comprise one or more than one of (R1)3Sb, (R1R2N)3Sb, (R1O)3Sb, ((R1)3Si)3Sb and SbM3, wherein R1 and R2 are linear chains, branched chains or annular alkyls containing 1-10 carbons, and M is Cl, F or Br. The TiSbTe phase-changing materials prepared by the titanium-antimony-tellurium phase-changing material depositing method have the advantages of being accurate and controllable in thickness, good in thin film compactness and strong in pore filling capability. Phase-changing thin films prepared by the titanium-antimony-tellurium phase-changing material depositing method can be applied to a storer, so that high-density storing can be achieved, and simultaneously low-energy-consumption devices can be obtained.

The invention provides a method for preparing a titanium-stibium-tellurium (Ti-Sb-Te) phase change material and a method for preparing a phase change storage unit. The method for preparing the Ti-Sb-Te phase change material comprises the following steps: 1) introducing a precursor SbCl3 pulse of Sb to a substrate, washing away unabsorbed SbCl3, then introducing a precursor (R3Si)2Te pulse of Te and washing away the unabsorbed (R3Si)2Te and by-products of reaction; 2) introducing a TiCl4 pulse of Ti to the substrate, washing away the residual TiCl4, then introducing the precursor (R3Si)2Te pulse of Te and washing away the residual (R3Si)2Te and by-products of reaction; and 3) introducing a precursor SbCl3 pulse of Sb to the substrate, washing away the residual SbCl3, then introducing a (R3Si)3Sb of Sb and washing away the unabsorbed (R3Si)3Sb and by-products of reaction. The Ti-Sb-Te phase change material prepared by using the method has the characteristics of accurately controllable thickness, good film compactness and strong pore-filling capability. A phase change film prepared by using the method can realize high-density storage when applied to a memorizer, and meanwhile a low power-cost device can be obtained.

The invention relates to the technical field of semiconductor memories, and discloses a nanoscale non-volatile resistive random access memory unit utilizing a hemi-spherical grain (HSG) electron beam resist and a preparation method thereof. The memory mainly comprises a first conductive electrode, a through-hole, a first resistive material, a second resistive material, a second metal nano layer, a third resistive material and a third conductive electrode, wherein the through-hole and the first resistive material are formed after a hydrogen silsequioxane (HSQ) electron beam resist is exposed and developed via electron beams. A part left after the HSQ electron beam resist is exposed and developed is utilized as the through-hole, the diameter of the through-hole can be as small as a nano magnitude, and the HSQ electron beam resist which is not completely developed at the bottom of the through-hole can be used as a part or the whole of the first resistive material. By utilizing the preparation method, the resistance changing memory which has the advantages of small device area, high yield and good performance can be obtained; and the semiconductor memory is apt to large-scale integration and practicality.

The invention provides a memory array structure and an operating method thereof. The memory array structure comprises a plurality of serial structures which are arranged in parallel along a first direction and a second direction, a plurality of word lines which are arranged in parallel along the second direction, a first selection line along the second direction, a second selection line along the section direction, and a plurality of parallel bit lines along the first direction, wherein each serial structure comprises a first selection transistor, a plurality of memory units and a second selection transistor which are sequentially connected with one another in series in the first direction, and the storage units are logically equivalent to a mode that one selection tube is serially connected with one or more storage tubes; each word line is connected with a grid of each storage unit; the first selection line is connected with a grid of each first selection transistor; the second selection line is connected with a grid of each second selection transistor; and the drain ends of the first selection transistors of the serial structures are connected with one bit line adjacent to the serial structures, and the source ends of the second selection transistors of the serial structures are connected with another bit line adjacent to the serial structures. According to the memory array structure, the storage density of a memory array can be effectively enhanced.

A folding mesh chair includes a seat and a backrest carried between opposite frame sides. The chair has an unfolded seating position in which the seat pivots to extend from the frame sides and bottoms of front and rear legs move apart, and a folded position in which the seat pivots toward the frame sides and the front and rear legs move together. One or both of the seat and the backrest have a continuous sheet of flexible and elastic mesh or patterned open texture plastic held across and substantially covering an opening in an all-plastic hoop fixed between the frame sides.

The invention provides a phase transition thin film material, a preparation method thereof and a phase transition memory unit. A general formula of the phase transition thin film material is Ni<x>Ti<y>Sb<z>Te<100-x-y-z>, wherein x is greater than 0 and lower than or equivalent to 40, y is greater than or equivalent to 15 and lower than or equivalent to 85, z is greater than or equivalent to 15 and lower than or equivalent to 85, and x+y+z is greater than or equivalent to 30 and lower than or equivalent to 100. The phase transition thin film material can realize reversible phase transition via external electric pulses, the resistance state is changed obviously before and after phase transmistion, a difference between the resistances is high, the state 0 or 1 can be read convenient and easily by an external circuit, and the phase transition thin film material can be an ideal phase transition storage material; and compared with common Ge2Sb2Te5, the phase transition thin film material has a higher crystallization temperature, a higher crystallization speed, a lower operation voltage and a more stable chemical preparation technology.

The present invention relates to a parts container with storage compartments, and in particular to a parts container having storage compartments located at areas that would be easily accessible to persons working with automobiles. The container has a body with several top compartments or cavities. There are preferably four front compartments, four middle components and four rear compartments. A bottom compartment can be provided. A handle is further provided. The handle has writing areas for a user to place messages on the handle (such as names, due dates, etc.). The handle of one container can nest in the bottom compartment of another container when stacked. A cover having a perimeter shaped to match the container perimeter is provided. The cover has an opening to allow the handle to pass there through. The handle is preferably located interior of the compartments.