42results about How to "High density storage" patented technology

In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device and a method of manufacturing the same, a SONOS memory device includes a semiconductor substrate, an insulating layer deposited on the semiconductor substrate, an active layer formed on a predetermined region of the insulating layer and divided into a source region, a drain region, and a channel region, a first side gate stack formed at a first side of the channel region, and a second side gate stack formed at a second side of the channel region opposite the first side of the channel region. In the SONOS memory device, at least two bits of data may be stored in each SONOS memory device, thereby allowing the integration density of the semiconductor memory device to be increased without increasing an area thereof.

Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-XCaXMnO3 (PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.

A material handling system for placing and retrieving palletized loads in densely spaced storage areas utilizing an overhead bridge crane connected to a pallet load handling device by way of lifting cables and a stabilizing mast assembly. The pallet handling devices may include vertically or horizontally movable pallet engaging fork mechanisms mounted on a generally rectangular frame which is operable to be lowered over a pallet load and engaged therewith by way of the fork mechanisms. The pallet handling device frame may be split and interconnected by actuator mechanisms to facilitate ease of placing the handling devices over a pallet load and releasing the load from the handling device.

In a memory device and a method of forming the same, in one embodiment, the memory device comprises a substrate and a bit line on the substrate extending in a first direction. A first word line structure is provided on the bit line and spaced apart from, and insulated from, the bit line, the first word line structure extending in a second direction transverse to the first direction. An electrode is coupled to the bit line extending over the first word line structure and spaced apart from the first word line structure by a first gap. A second word line structure is over the electrode and spaced apart from the electrode by a second gap, the second word line structure extending in the second direction. The electrode is cantilevered between the first word line structure and the second word line structure such that the electrode deflects to be electrically coupled with a top portion of the first word line structure through the first gap in a first bent position and deflects to be electrically coupled with a bottom portion of the second word line structure through the second gap in a second bent position, and is isolated from the first word line structure and the second word line structure in a rest position.

The invention discloses a multilayer multichannel first-in first-out (FIFO) pallet for pallet chain conveyors, comprising a pallet frame. The pallet frame is internally provided with a plurality of linear conveying channels; the conveying channel openings are arrayed into a latticed shape; and each conveying channel is provided with a plurality of pallet chain conveyors in the conveying direction, wherein the pallet chain conveyors are fixed on the pallet frame and connected end to end. About 30 conveying channel openings can be arranged in the height direction of the front side of a pallet storage, the number of the conveying channel openings in the width direction can not be restricted, and the number of goods positions in the length direction of the conveying channels can not be restricted as required, thus the high-density storage is realized. The pallet chain conveyors which are connected end to end in the conveying channels can realize high-frequency storage and fetch.

In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device and a method of manufacturing the same, a SONOS memory device includes a semiconductor substrate, an insulating layer deposited on the semiconductor substrate, an active layer formed on a predetermined region of the insulating layer and divided into a source region, a drain region, and a channel region, a first side gate stack formed at a first side of the channel region, and a second side gate stack formed at a second side of the channel region opposite the first side of the channel region. In the SONOS memory device, at least two bits of data may be stored in each SONOS memory device, thereby allowing the integration density of the semiconductor memory device to be increased without increasing an area thereof.

The invention provides a titanium-antimony-tellurium phase-changing material depositing method and a preparation method of a phase-changing storage unit. The titanium-antimony-tellurium phase-changing material depositing method includes: depositing a Ti precursor which comprises one or more than one of (R1)4Ti, (R1R2N)4Ti, (R1O)4Ti, ((R1)3Si)4Ti and TiM4, wherein R1 and R2 are linear chains, branched chains or annular alkyls containing 1-10 carbons, and M is Cl, F or Br; depositing a Te precursor which comprises one or more than one of (R1)2Te, (R1R2N)2Te and ((R1)3Si)2Te, wherein R is selected from a linear chain, a branched chain or an annular alkyl or alkenyl containing 1-10 carbons; and depositing Sb precursors which comprise one or more than one of (R1)3Sb, (R1R2N)3Sb, (R1O)3Sb, ((R1)3Si)3Sb and SbM3, wherein R1 and R2 are linear chains, branched chains or annular alkyls containing 1-10 carbons, and M is Cl, F or Br. The TiSbTe phase-changing materials prepared by the titanium-antimony-tellurium phase-changing material depositing method have the advantages of being accurate and controllable in thickness, good in thin film compactness and strong in pore filling capability. Phase-changing thin films prepared by the titanium-antimony-tellurium phase-changing material depositing method can be applied to a storer, so that high-density storing can be achieved, and simultaneously low-energy-consumption devices can be obtained.

The invention provides a method for preparing a titanium-stibium-tellurium (Ti-Sb-Te) phase change material and a method for preparing a phase change storage unit. The method for preparing the Ti-Sb-Te phase change material comprises the following steps: 1) introducing a precursor SbCl3 pulse of Sb to a substrate, washing away unabsorbed SbCl3, then introducing a precursor (R3Si)2Te pulse of Te and washing away the unabsorbed (R3Si)2Te and by-products of reaction; 2) introducing a TiCl4 pulse of Ti to the substrate, washing away the residual TiCl4, then introducing the precursor (R3Si)2Te pulse of Te and washing away the residual (R3Si)2Te and by-products of reaction; and 3) introducing a precursor SbCl3 pulse of Sb to the substrate, washing away the residual SbCl3, then introducing a (R3Si)3Sb of Sb and washing away the unabsorbed (R3Si)3Sb and by-products of reaction. The Ti-Sb-Te phase change material prepared by using the method has the characteristics of accurately controllable thickness, good film compactness and strong pore-filling capability. A phase change film prepared by using the method can realize high-density storage when applied to a memorizer, and meanwhile a low power-cost device can be obtained.

A mobile storage unit for a mobile storage system includes a pair of axially extending wheel units, each of which defines spaced apart end areas and includes a wheel arrangement. A storage unit support structure is interconnected with the wheel units, and includes upright support members and shelf support members. A pair of upright support members are engaged with and supported by the end areas of each wheel unit. A lowermost shelf support member is secured to an end area of one of the wheel units. The lowermost shelf support members are secured to the upright support members and to the end areas of the wheel units. Each end area of each wheel unit includes an upwardly facing engagement surface, and the lowermost shelf support member is secured to the upwardly facing engagement surface. The upright support members are also supported by the upwardly facing engagement surface.

In a memory device and a method of forming a memory device, the device comprises a substrate, a first electrode extending in a vertical direction relative to the substrate, and a second electrode extending in a vertical direction relative to the substrate, the second electrode being spaced apart from the first electrode by a vertical gap. A third electrode is provided that extends in a vertical direction in the electrode gap, the third electrode being spaced apart from the first electrode by a first gap and the third electrode being spaced apart from the second electrode by a second gap, the third electrode being elastically deformable such that the third electrode deflects to be electrically coupled with the first electrode through the first gap in a first bent position and to be electrically coupled with the second electrode through the second gap in a second bent position, and to be isolated from the first electrode and the second electrode in a rest position.

The invention relates to the technical field of semiconductor memories, and discloses a nanoscale non-volatile resistive random access memory unit utilizing a hemi-spherical grain (HSG) electron beam resist and a preparation method thereof. The memory mainly comprises a first conductive electrode, a through-hole, a first resistive material, a second resistive material, a second metal nano layer, a third resistive material and a third conductive electrode, wherein the through-hole and the first resistive material are formed after a hydrogen silsequioxane (HSQ) electron beam resist is exposed and developed via electron beams. A part left after the HSQ electron beam resist is exposed and developed is utilized as the through-hole, the diameter of the through-hole can be as small as a nano magnitude, and the HSQ electron beam resist which is not completely developed at the bottom of the through-hole can be used as a part or the whole of the first resistive material. By utilizing the preparation method, the resistance changing memory which has the advantages of small device area, high yield and good performance can be obtained; and the semiconductor memory is apt to large-scale integration and practicality.

A mobile storage unit for a mobile storage system includes a pair of axially extending wheel units, each of which defines spaced apart end areas and includes a wheel arrangement. A storage unit support structure is interconnected with the wheel units, and includes upright support members and shelf support members. A pair of upright support members are engaged with and supported by the end areas of each wheel unit. A lowermost shelf support member is secured to an end area of one of the wheel units. The lowermost shelf support members are secured to the upright support members and to the end areas of the wheel units. Each end area of each wheel unit includes an upwardly facing engagement surface, and the lowermost shelf support member is secured to the upwardly facing engagement surface. The upright support members are also supported by the upwardly facing engagement surface.

The invention provides a memory array structure and an operating method thereof. The memory array structure comprises a plurality of serial structures which are arranged in parallel along a first direction and a second direction, a plurality of word lines which are arranged in parallel along the second direction, a first selection line along the second direction, a second selection line along the section direction, and a plurality of parallel bit lines along the first direction, wherein each serial structure comprises a first selection transistor, a plurality of memory units and a second selection transistor which are sequentially connected with one another in series in the first direction, and the storage units are logically equivalent to a mode that one selection tube is serially connected with one or more storage tubes; each word line is connected with a grid of each storage unit; the first selection line is connected with a grid of each first selection transistor; the second selection line is connected with a grid of each second selection transistor; and the drain ends of the first selection transistors of the serial structures are connected with one bit line adjacent to the serial structures, and the source ends of the second selection transistors of the serial structures are connected with another bit line adjacent to the serial structures. According to the memory array structure, the storage density of a memory array can be effectively enhanced.

The invention provides a design method of a super-surface color nano printing device for realizing reconfigurable watermarks. The design method comprises the following steps: constructing a super-surface array; optimizing and simulating to obtain reflection spectrums of the nano-brick structural units with multiple groups of size parameters, and calculating to obtain structural colors of the nano-brick structural units; designing a target color image, and selecting several groups of size parameters with structure colors meeting requirements as alternative size parameters according to color distribution of the target color image; finding size parameters corresponding to the nano-brick structure units corresponding to the pixel points from the alternative size parameters according to the colors of the pixel points of the target color image; and designing a watermark image to be superposed, setting the nano-brick steering angle of the nano-brick structure unit corresponding to the pixel points without watermark superposition as alpha on the basis of the steps, and setting the nano-brick steering angle of the nano-brick structure unit corresponding to the pixel points with watermark superposition as alpha + / -90 degrees. The machining error tolerance is high, the design and machining difficulty is reduced, and the good development prospect is achieved.

The invention provides a tungsten-antimony-tellurium (W-Sb-Te) phase change material atomic layer deposition method and a phase change storage unit preparation method. The tungsten-antimony-tellurium (W-Sb-Te) phase change material atomic layer deposition method is as follows: 1) introducing a SbCl3 pulse to a substrate, washing away unabsorbed SbCl3, then introducing a (R3Si)2Te pulse, and washing away unabsorbed (R3Si)2Te and reaction by-products; 2) introducing a H2 and Si2H6 mixed pulse, washing away residual H2 and Si2H6, then introducing a WF6 pulse, and washing away residual WF6 and reaction by-products; 3) introducing the SbCl3 pulse, washing away residual SbCl3, then introducing a (R3Si)3Sb pulse, and washing away unabsorbed (R3Si)3Sb and reaction by-products; 4) repeating the step 1)-2) or the step 1)-3) to form a cycle period. On the basis of the preparation method, a corresponding phase change storage unit can be prepared. A tungsten-antimony-tellurium (W-Sb-Te) phase change material prepared by the method has the characteristics of accurately controllable thickness, good film compactness and strong pore-filling capability. A phase change film prepared by using the method can realize high-density storage when applied to a memorizer, and meanwhile a low power--power dissipation device can be obtained.

A spin-orbit momentum moment magnetic memory that does not require an external magnetic field. The memory SOT-MTJ is based on perpendicular magnetic anisotropy. In addition to the free layer, tunneling barrier layer, reference layer and antiferromagnetic metal in the traditional MTJ structure, layer, an additional non-ferromagnetic metal layer was added, the material of the anti-ferromagnetic metal layer was optimized, and the shape of the tunnel barrier layer was improved; the SOT-MTJ structure is the bottom electrode from bottom to top, There are seven layers in total including non-ferromagnetic metal layer, ferromagnetic metal layer 1 which is the free layer, wedge tunneling barrier layer, ferromagnetic metal layer 2 which is the reference layer, antiferromagnetic metal layer and top electrode. This invention can perform writing operations without an external magnetic field, so it consumes less energy than the previous SOT-MRAM and has better scaling performance as the process node decreases.

The invention provides a phase transition thin film material, a preparation method thereof and a phase transition memory unit. A general formula of the phase transition thin film material is Ni<x>Ti<y>Sb<z>Te<100-x-y-z>, wherein x is greater than 0 and lower than or equivalent to 40, y is greater than or equivalent to 15 and lower than or equivalent to 85, z is greater than or equivalent to 15 and lower than or equivalent to 85, and x+y+z is greater than or equivalent to 30 and lower than or equivalent to 100. The phase transition thin film material can realize reversible phase transition via external electric pulses, the resistance state is changed obviously before and after phase transmistion, a difference between the resistances is high, the state 0 or 1 can be read convenient and easily by an external circuit, and the phase transition thin film material can be an ideal phase transition storage material; and compared with common Ge2Sb2Te5, the phase transition thin film material has a higher crystallization temperature, a higher crystallization speed, a lower operation voltage and a more stable chemical preparation technology.

The present invention relates to a parts container with storage compartments, and in particular to a parts container having storage compartments located at areas that would be easily accessible to persons working with automobiles. The container has a body with several top compartments or cavities. There are preferably four front compartments, four middle components and four rear compartments. A bottom compartment can be provided. A handle is further provided. The handle has writing areas for a user to place messages on the handle (such as names, due dates, etc.). The handle of one container can nest in the bottom compartment of another container when stacked. A cover having a perimeter shaped to match the container perimeter is provided. The cover has an opening to allow the handle to pass there through. The handle is preferably located interior of the compartments.

The embodiment of the invention discloses a nano composite material, a preparation method and use method thereof, and a device. The nano composite material is characterized by comprising a first nano particle and a second nano particle which are combined; the first nano-particles are transition metal nano-particles, and the second nano-particles are one or a combination of the following materials: lithium nitride nano-particles, lithium oxide nano-particles, lithium phosphide nano-particles, lithium selenide nano-particles and lithium sulfide nano-particles. The nano composite material can be subjected to magnetic regulation and control under low voltage, and high-speed and high-density electronic spin information storage is realized.