The invention provides an SONOS (
Silicon Oxide Nitride Oxide Semiconductor) memory and an array memory unit, which comprise a selection tube
gate oxide positioned on the surface of a well region, selection gate
polycrystalline silicon positioned on the surface of the selection tube
gate oxide, memory tube
polycrystalline silicon positioned on two sides of the selection gate
polycrystalline silicon, a side wall covering part of the memory tube polycrystalline
silicon, and a gate
electrode positioned on the surface of the selection gate polycrystalline
silicon, wherein the memory tube polycrystalline
silicon and the selection gate polycrystalline silicon are separated by an ONO (
Oxide-
Nitride-Oxide) layer; the side wall is located on the side, opposite to the selection gate polycrystalline silicon, of the
storage tube polycrystalline silicon, the side wall covers the surface of the well region, an LDD region is formed in the well region below the side wall, a first source-drain injection region and a
second source-drain injection region are formed in the well region, the first source-drain injection region is adjacent to the LDD region on one side of the selection gate polycrystalline silicon, and the
second source-drain injection region is adjacent to the LDD region on one side of the selection gate polycrystalline silicon. The
second source-drain injection region is adjacent to the LDD region on the other side of the selection gate polycrystalline silicon, the first source-drain injection region and the second source-drain injection region are both located on the side, opposite to the
storage tube polycrystalline silicon, of the side wall, and the
storage tube polycrystalline silicon on the two sides of the selection gate polycrystalline silicon are electrically communicated.