The application discloses a
nitride non-volatile multi-value logic memory and a manufacturing method, and mainly solves the problems of poor durability, high
delay and large leakage of the existing
nitride non-
volatile memory. The memory comprises a substrate, a
nucleation layer, a channel layer, a floating gate layer, a first
barrier layer, a first
quantum well layer, a second
barrier layer, an
isolation layer and a gate
contact layer from bottom to top. The first
barrier layer, the first
quantum well layer and the second barrier layer form a first
resonant tunneling diode, and a series layer, a third barrier layer, a second
quantum well layer and a fourth barrier layer are arranged between the second barrier layer and the
isolation layer, the third barrier layer, the second
quantum well layer and the fourth barrier layer form a second
resonant tunneling diode, source electrodes and drain electrodes are arranged on both sides of the floating gate layer, a gate
electrode is arranged on the gate
contact layer, and a
triode structure device is formed. The application can increase the current difference of writing and erasing, reduce the
delay and leakage, easily realize the multi-value
logic state, and can be used for high-density storage and multi-value logic circuits.