The high-density OTP memory comprises an array formed by arranging a preset number of memory units, and each memory unit comprises an anti-fuse memory MOS tube, a first row line WP, a second row line WP, a third row line WP, a fourth row line WP and a fifth row line WP, the grid
electrode of the
voltage-dividing MOS tube is connected with the second row wire WB, and the first current end of the
voltage-dividing MOS tube is connected with one current end of the anti-fuse storage MOS tube; the grid
electrode of the selection MOS tube is connected with the third row line WS, the first current end of the selection MOS tube is connected with the second current end of the
voltage division MOS tube, and the second current end of the selection MOS tube is connected with the first column line BL; the voltage-dividing MOS tube comprises a source region of a second
conduction type, a drain region and a substrate of a first
conduction type, and is characterized in that the source region of the voltage-dividing MOS tube comprises a second
conduction type region and a second conduction type lightly doped region, the drain region is only provided with the second conduction type region, the
doping concentration of the second conduction type region of the source region is the same as that of the second conduction type region of the drain region, and the
doping concentration of the first conduction type region is the same as that of the second conduction type region. The
doping concentration of the second conductive type lightly doped region is lower than that of the second conductive type region. By adopting the technology, the write-in success rate can be obviously improved.