86 results about "High density storage" patented technology

A memory device includes a column decoder configured to decode a column address. The column decoder includes a column select driver configured to modulate a column select signal based on the column address in order to activate or deactivate a plurality of column selection circuits coupled to a column select line. The column select signal includes an activation pulse for activating the plurality of column selection circuits during an activation interval. The activation pulse includes a first portion having a positive boost signal level and a second portion having an activation signal level that is less than the positive boost signal level. The column select driver is configured to generate the first portion of the activation pulse for a first duration of the activation interval, and, following the first duration, generate the second portion of the activation pulse for a second duration of the activation interval.

The invention discloses a manufacturing method of a reconfigurable LPCAMM storage device, and relates to the technical field of production of storage devices, and the manufacturing method of the reconfigurable LPCAMM storage device realizes comprehensive improvement of technical performance, production efficiency and commercial value through an innovative modular hierarchical architecture and process collaborative design. On the basis that the compact characteristic of a traditional LPCAMM is kept, through the dual effects of mechanical guiding and elastic compensation, the sub-board assembly precision is improved, through the collaborative design of a self-compensation contact array of the detachable storage sub-board and a heat dissipation strengthening layer (S200), the ultra-long plugging service life is achieved, and through the combination of three-dimensional microstructure heat dissipation and the phase change heat storage technology, the phase change heat storage performance is improved. The working temperature of the device is reduced, the thermal resistance value is reduced, the thermal management bottleneck of a high-density storage module is broken through, and a complete solution with high reliability, maintainability and cost effectiveness is provided for large-scale application of the LPCAMM technology in emerging markets such as cloud computing terminals and industrial Internet of Things equipment.

The invention discloses a comprehensive two-dimensional vertical structure metal-semiconductor field effect transistor and a preparation method thereof. A source electrode, a lower isolation layer, a drain electrode and an upper isolation layer which are vertically stacked are formed on the surface of a substrate, an inclined side wall is formed, a channel covers the inclined side wall, a grid electrode and the channel are self-aligned, and a semi-metal grid electrode and a semiconductor channel are in direct contact to form a Schottky junction; based on a comprehensive two-dimensional material system, the Fermi pinning effect and unintentional doping are effectively inhibited, and the performance of the device is optimized by optimizing the grid control capability and the electric contact performance; a gate dielectric layer is not arranged, so that the problems of electrical performance deterioration and the like under a limit miniature scale are avoided; the integration density of the device is improved and the research and development and manufacturing cost is controlled while excellent performance is kept; the channel length and the contact length are synchronously and accurately reduced by utilizing a side wall vertical structure; the method is applied to the industrial application fields of next-generation integrated circuit chips, high-density memories, flexible and wearable electronics and the like which break through the silicon-based physical limit.

This disclosure is directed to column driver circuitry of a memory device. A memory bank of the memory device may include multiple memory cells arranged along multiple column select lines and row select lines. The column driver circuitry may include column drivers coupled to the column select lines. A column driver may generate a column select signal with multiple voltage steps for accessing a target memory cell coupled to a respective column select line. The column decoder may include circuitry to adjust a voltage level and / or duration of each voltage step of the column select signal to provide a desired voltage level to a target memory cell based on a disposition of the target memory cell along a column select line. For example, the column decoder may output a higher voltage level followed by a lower voltage level to access the target memory cell. The higher voltage level and the lower voltage level may be above a threshold voltage level for accessing the target memory cell.

The invention discloses an analog memristor based on a Ga2O3 / TiO2 heterojunction structure and a preparation method of the analog memristor, and belongs to the field of nonvolatile resistive random access memorizers, the preparation method comprises the following steps: under a vacuum condition, depositing a conductive film on a pretreated insulating substrate by adopting a physical vapor deposition method to serve as a bottom electrode; sequentially depositing a Ga2O3 thin film and a TiO2 thin film on the bottom electrode by adopting a magnetron sputtering method, and constructing a Ga2O3 / TiO2 heterojunction as a resistive layer; and depositing a conductive thin film on the surface of the resistive layer by adopting a physical vapor deposition method to serve as a top electrode to obtain the analog memristor based on the Ga2O3 / TiO2 heterojunction structure. A Ga2O3 semiconductor material with a wide forbidden band and high electron mobility and a TiO2 material with a high dielectric constant, stability and reliability are adopted, and the excellent and high-stability heterojunction memristor is prepared through a specific sputtering process. Bionic behaviors such as synaptic plasticity can be realized, and the method has important application potential in the fields of high-density storage, neural network calculation, biological synaptic simulation and the like.

The invention discloses a high-temperature solid oxide electrolyzed water hydrogen production system coupling photo-thermal power generation and thermochemical heat storage. The system comprises a power module, a thermochemical heat storage and air supply module, a water vapor supply module and a high-temperature solid oxide electrolyzed water module. The photo-thermal power generation system provides clean electric energy and high-temperature heat energy, the thermochemical heat storage module achieves high-density storage and on-demand release of heat energy through reversible reaction, the intermittent problem of renewable energy sources is solved, and high-temperature stable operation of an SOEC electrolytic cell is ensured. Through the coupling design of the thermochemical heat storage system and the SOEC, heat flow distribution is optimized, energy consumption of traditional electric heating is reduced, the external steam heating requirement and the hot air requirement are reduced, the total energy cost of hydrogen production is reduced, and the unit hydrogen production cost is remarkably reduced. The thermochemical heat storage module can stabilize the volatility of photo-thermal power generation, so that the system can still stably supply energy when sunlight is insufficient, the utilization rate of renewable energy sources is increased, clean production of green hydrogen is achieved, and the carbon neutralization target is met.

The invention relates to the technical field of intelligent warehousing, and particularly discloses a vertical lifting type sorting warehouse and a control method thereof. The sorting warehouse comprises a frame structure, a lifting device, a tray bearing mechanism, a goods allocation forming unit, an access channel assembly, a central control module and a man-machine interaction device, and high-density storage and rapid access of multiple trays in a three-dimensional space are achieved through modular arrangement. The control method comprises the steps of task analysis, sorting scheduling, path conflict detection, performance feedback optimization and the like, a scheduling sequence is constructed based on task vectors, trays are driven to ascend and descend in sequence, goods allocation interaction is conducted, and the control method has the advantages of being clear in task structure, stable in path execution, high in scheduling adaptability and the like. The method is suitable for various three-dimensional storage application scenes such as e-commerce logistics, industrial manufacturing and medicine distribution.

The invention provides a semiconductor wafer nitrogen intelligent warehouse. The semiconductor wafer nitrogen intelligent warehouse comprises an external feeding and buffering part, a rotary connection table and sealing door isolation part, a roadway and manipulator transfer part and an internal storage and gas control part. An external feeding and caching part receives and stores wafers through a feeding device and a feeding caching goods shelf, a rotary connection table achieves non-contact transfer through a clamping arm and a rotary platform, a sealing door assembly ensures airtight isolation, a roadway and a mechanical arm accurately transfer the wafers through a linear module, and a plurality of rows of goods shelves are adopted for internal storage to support high-density storage. The gas circulating device maintains a nitrogen inert environment through temperature regulation purification and filtration, and the oxygen supply module guarantees emergency maintenance safety. The problems of nitrogen leakage, insufficient transfer precision and low storage density are solved, and the wafer storage efficiency and the anti-oxidation protection capability are improved.

The invention discloses a high-density storage system order batch optimization method and system under uncertain factors. The method comprises the steps of obtaining order data and performing preprocessing; inputting the preprocessed data into an order batch sorting model, and carrying out order task allocation according to an output result; and the order batching model is established by combining customer order returning tendency prediction, fusing a dynamic decision rule and a batching clustering algorithm with capacity limitation and taking minimization of all order sorting completion time as an objective function. According to the method, the order batch sorting model fusing the dynamic decision rule and the batch clustering algorithm with capacity limitation is provided, the orders can be batched in real time according to the real-time arrival state and number of the orders and the capacity of the workbench in the order arrival process, the defect of fixed time window batch is avoided, resource allocation can be flexibly adjusted, and the efficiency of batch sorting is improved. The equipment utilization rate is effectively improved; and in combination with customer order returning tendency prediction, the order batch sorting result is more accurate and efficient.

This invention relates to an on-orbit high-density storage and supply device and method for electric propulsion working propellant, belonging to the field of spacecraft deep space exploration and on-orbit servicing technology, which can effectively save space and mass resources of spacecraft. The cooling circuit consists of a storage tank, a refrigerator, a pump, and an injection pipe connected sequentially; the pressurization circuit consists of a storage tank, a heating evaporator, and a third solenoid valve connected in a loop; and the gaseous working propellant circuit consists of a storage tank, a vaporizer, and a buffer chamber connected sequentially. This invention simplifies the complexity of the propulsion system and reduces potential failure risks, effectively supporting the application of high-power, high-specific-impulse, and long-life new electric propulsion technologies, providing important support for deep space exploration and on-orbit servicing missions.

The invention discloses a method for rapidly forming a nano pattern by using a block copolymer and application thereof. The method for rapidly forming the nano-pattern by using the block copolymer comprises the following steps: dissolving the polystyrene-polymethyl methacrylate block copolymer in a mixed solvent consisting of a low-boiling-point organic solvent and a high-boiling-point organic solvent, wherein the boiling point of the low-boiling-point organic solvent is lower than 150 DEG C, and the boiling point of the high-boiling-point organic solvent is lower than 150 DEG C; the boiling point of the high-boiling-point organic solvent is higher than 150 DEG C, the high-boiling-point organic solvent is spin-coated on the surface of a substrate to form a thin film, annealing and plasma etching are carried out, and the periodic nano-pattern is obtained. According to the method for rapidly forming the nano pattern by using the segmented copolymer, the annealing time is shortened to be within 5 min, the production efficiency is remarkably improved, the formed nano pattern is high in structural orderliness and low in defect rate, and the method is suitable for the fields of semiconductor guided self-assembly photoetching, nanoimprint template manufacturing, high-density storage device preparation and the like.

The application provides an intelligent high-density storage pharmacy and a medicine management method, which comprise a track robot, a grid track, a support, a charging device, a server, a medicine access channel and a medicine box. The track robot runs on the grid track. The grid track is laid on the storage pharmacy support. The vertical columns between the storage pharmacy supports form a derrick structure as a storage space of the storage pharmacy. The charging device is used for charging the track robot. The server is connected with the storage pharmacy. The track robot in the storage pharmacy runs to a specified position of a grid track layer according to a command signal sent by the server, and a lifting mechanism arranged in the track robot is used for storing and taking the medicine box in the storage area of the storage pharmacy. The medicine box is used for storing fixed medicines or medicines prepared by doctors. The bottom layer of the storage pharmacy is provided with the medicine access channel. The track robot takes out the medicine box according to the instruction of the server and completes the storage and taking of the medicines through the medicine access channel of the bottom layer of the storage pharmacy.

The invention discloses a terminal feeding device which comprises a feeding assembly, the feeding assembly comprises two oppositely-arranged guide frames, guide grooves are formed in the guide frames, and a material taking position and a plurality of feeding positions arranged in the horizontal direction and the vertical direction are arranged in the guide grooves; supporting blocks are arranged in the material supply positions, the outer walls of every two adjacent supporting blocks abut against each other, the outer walls of the supporting blocks abut against the inner walls of the guide grooves, a material supply seat for connecting the supporting blocks is arranged between the oppositely-arranged supporting blocks in the two guide frames, and a material supply cavity for allowing the terminals to be placed in is formed in the material supply seat; the feeding device further comprises a supporting frame, a driving assembly is arranged on the supporting frame, and the driving assembly is used for driving the supporting block to move in the direction of the inner edge of the guide groove so that the designated feeding base can reach or leave the material taking position. The multiple supporting blocks are tightly arranged in the feeding position of the guide groove to form a high-density storage array, the driving assembly drives the supporting blocks to move along the path limited by the inner edge of the guide groove, and the non-functional space is greatly compressed.

The application discloses a kind of biomimetic mineralization materials with high stable protection DNA and preparation method thereof.DNA molecule is self-assembled with divalent metal ion, and DNA / metal nanoparticle is obtained; polyelectrolyte layer is wrapped on the surface of DNA / metal nanoparticle by layer-by-layer assembly technology, and DNA / metal@LBL nanoparticle is obtained; polydopamine layer is deposited on the surface of DNA / metal@LBL nanoparticle, and DNA / Fe@LBL@PDA particle is obtained, which is biomimetic mineralization material with high stable protection DNA.The biomimetic mineralization material has the advantages of simple construction, high density and long-term stability, and can effectively protect the stability and integrity of DNA molecule in harsh external storage environment (such as ROS, high temperature, high salt, alkaline, humid, biological solvent and nuclease environment).The present application can provide technical support for DNA high-density storage and long-term stability storage, and has wide application value in the fields of biological medicine, genetic engineering, disease treatment and DNA storage.

The invention discloses a movable vertical circulating three-dimensional goods shelf carrying trolley. The trolley is based on the chain transmission structure optimization design of the vertical circulation stereo garage, the movable chassis and the mechanical claw taking and placing device are combined, and the problems that traditional storage equipment is low in space utilization rate, fixed in carrying path and insufficient in flexibility are solved. According to the technical scheme, a movable chassis carries a vertical circulation goods shelf system, vertical circulation storage and taking of carrying trays are achieved through a grooved wheel rail chain transmission mechanism, and accurate grabbing and releasing of goods are completed by integrating a telescopic mechanical claw driven by a motor. The system has the high-density storage advantage of a vertical circulation structure and the scene adaptability of mobile equipment, the storage space utilization rate and the cargo carrying efficiency can be remarkably improved, and the system is suitable for scenes such as production line material turnover.

The application discloses a kind of wind and light complementary calcium cycle thermochemical energy storage system multi-objective collaborative control method based on AI optimization, it is related to renewable energy storage technical field, the reversible carbonation reaction of calcium-based material (CaO / CaCO3) is used to realize the high-density storage and release of heat energy, the space-time prediction model of wind power, photovoltaic output is constructed by random forest algorithm, and the global optimization of system multi-objective is realized by combining improved particle swarm optimization algorithm.Compared with existing electrochemical energy storage and physical energy storage technology, the calcium cycle thermochemical energy storage of the application has the significant advantages of low energy storage cost, long energy storage time, long cycle life, abundant raw materials and the like.The results show that the annual power generation of the system after optimization reaches 223.67GWh, the cost of electricity per kilowatt-hour is reduced to 0.35 yuan / kWh, the annual carbon emission reduction is 167800 tons, and the investment recovery period is 7.34 years.The application provides an economical and efficient long-time energy storage solution for high-proportion renewable energy grid connection.

The invention discloses a tail end express station sorting in-out warehouse system based on a mechanical arm. The system comprises a clamping and transporting mechanism used for storing bagged express, a bidirectional opening mechanism used for locally forming a picking and placing window, an identification strip and coding point structure used for position identification, and the mechanical arm and a clamping and transporting device used for executing picking and placing actions. The clamping and transporting mechanism is provided with a clamping plate capable of elastically avoiding and a driven block structure, so that the express parcels are kept in a stable posture in the storage process; the two-way opening mechanism forms a taking and placing window with the controllable width at a target position through the synergistic effect of shifting sliding blocks on the two sides and a linear driver. The identification strips and the coding points form a passive position identification structure which is used for acquiring the number and spacing information of the clamping plates in real time; and the mechanical arm enters the window according to the recognition result and completes taking and placing operation through the flexible clamping and conveying device. According to the system, stable storage and accurate picking and placing of bagged express items can be achieved under the high-density storage condition, the invalid receding stroke is reduced, the space utilization rate and the system reliability are improved, and the system is suitable for automatic sorting and warehouse-in and warehouse-out scenes of tail end stations.

The invention discloses a high-density embedded dynamic random access on-chip cache device and an implementation method. The high-density embedded dynamic random access on-chip cache device comprises an improved read-out current difference enhanced high-density eDRAM storage array and a read-out circuit, the reading circuit comprises a group of two-step power gating sensing amplifiers and a reading time sequence control circuit; threshold voltage selection of an on-chip cache reading transistor is optimized, and the difference proportion of reading current when different values are stored is expanded; by optimizing the structure of the cache memory array, the influence of interference current is eliminated; and a two-step power gating sensing amplifier is designed, and the reading current resolution capability is improved and the power consumption is effectively controlled by accurately controlling the starting time of two stages of circuits with different characteristics in the sensing process. The on-chip cache technical scheme provided by the invention realizes good balance among data retention time, energy efficiency and storage density, and is particularly suitable for edge computing equipment and artificial intelligence application scenes with strict requirements on energy efficiency and storage capacity.

The utility model discloses a front anti-collision assembly of a bin exploration robot, which comprises a C-opening metal plate cover and two front breast boards symmetrically welded and fixed at two ends of the surface of the C-opening metal plate cover, and a U-shaped guardrail is welded on the surface of the C-opening metal plate cover on one side of the front breast boards. Front arc opening baffles capable of sliding in the Y-axis direction are installed on the outer walls of the sides, away from the C opening metal plate cover, of the two U-shaped guardrails, and steel columns are fixed to the two sides of the surfaces of the two front baffle plates. According to the utility model, a double-column plane elastic reset structure is adopted, so that the space occupation of the anti-collision assembly in the advancing direction of the bin probing robot can be effectively reduced, a flat design is formed, the robot can flexibly move in a limited space, the working efficiency is prevented from being reduced due to the fact that the occupied space is too large, and the working efficiency is improved. Therefore, in a high-density storage warehouse, the robot can freely shuttle in the narrow channel between the goods shelves.

Various embodiments include a memory device that is capable of being configured with a wide data bus interface or a narrow data bus interface. The wide data bus interface is suitable for low-cost applications, such as smart phones and laptop computers. The narrow data bus interface is suitable for applications where high memory density is desirable, such as data servers in a data center. The wide data bus is twice the width of the narrow data bus width. In the narrow data bus configuration, the memory device transfers twice the number of data words in a single burst transfer relative to the wide data bus width configuration. As a result, the number of bits transferred in a single burst transfer is the same regardless of the configuration, thereby simplifying control logic of the memory device. The memory device can further accommodate various packaging options that facilitate high density memory designs.

The invention relates to the technical field of long-time novel heat energy storage, in particular to a Carnot cell energy storage device based on wind power photovoltaic photo-thermal waste heat and medium and low temperature phase change, which comprises a PVT photovoltaic photo-thermal assembly, a wind power generation unit, a waste heat source, a heat pump heating unit, a phase change heat storage and energy storage box and an ORC power generation circulation unit, the heat pump heating unit generates high-temperature heat energy through a high-temperature heat pump by using low-temperature heat sources such as clean electric power generated by solar photovoltaic and wind power generation and industrial waste heat; the phase change heat and energy storage box adopts a medium-low temperature phase change material to store heat energy at high density; the invention further provides a multi-mode operation method, the multi-mode operation method comprises a charging mode, an energy storage mode and a discharging mode, combined heat and power generation and direct heat energy supply of a user side are supported, the round-trip efficiency and the energy storage density of the energy storage system can be improved, the energy storage cost can be reduced, and the energy storage efficiency can be improved. The system is suitable for large-scale long-time energy storage and can fully utilize various medium and low temperature waste heat resources.

The utility model relates to intelligent warehousing technical field especially a kind of bar automatic access library, and bar placement component is made of several bar placement racks;Bar placement roller is installed in one end of bar placement component;Automatic grabbing device is used to automatically grab bar on bar placement roller, and bar is sent to the storage position of corresponding bar placement component;Automatic crane walks along the length direction of bar placement component, and the horizontal frame rotatable lifting spreader on automatic crane, lifting guide rail is installed on the both sides column of automatic crane along length direction, lifting assembly is installed on the top of automatic crane, and lifting assembly is connected with rotatable lifting spreader, to drive rotatable lifting spreader along lifting guide rail lifting.Collect logistics, interconnection, scientific management as a whole, through the precise mechanical structure, control system, realize the high-density storage and automation of bar and access, improve efficiency, reduce artificial cost and error rate, adapt to various diameter and length of bar, improve storage quantity.

Various embodiments include a memory device that is capable of being configured with a wide data bus interface or a narrow data bus interface. The wide data bus interface is suitable for low-cost applications, such as smart phones and laptop computers. The narrow data bus interface is suitable for applications where high memory density is desirable, such as data servers in a data center. The wide data bus is twice the width of the narrow data bus width. In the narrow data bus configuration, the memory device transfers twice the number of data words in a single burst transfer relative to the wide data bus width configuration. As a result, the number of bits transferred in a single burst transfer is the same regardless of the configuration, thereby simplifying control logic of the memory device. The memory device can further accommodate various packaging options that facilitate high density memory designs.

The utility model discloses a kind of multi-layer tray box structures, it is related to tray box technical field, including multi-layer tray box structure, including box and layered storage unit: box: rear side is provided with shell, the both sides in the shell interior are fixed with linear motor, the inner side of linear motor mobile base is connected with the end of support, the rear side of support is equipped with electric push rod, the front side end of electric push rod is connected with the middle part of pusher plate rear side, the shell is communicated with box arrangement;Layered storage unit: contain placement board, board groove, side plate, antiskid pad, placement seat, spring and press frame, the board groove is opened in the inside of box, this multi-layer tray box structure, by integrated automatic pushing and intelligent detection structure, the high-density storage of material, automation is accessed, significantly improve space utilization and operation efficiency, especially suitable for SMT production line small batch, flexible production demand of many varieties.

The application belongs to the technical field of microelectronic devices, and particularly relates to a non-volatile ZnO thin film memristor and a preparation method thereof. The device structure comprises: a ZnO thin film intermediate resistive layer prepared by a sol-gel method, FTO as a device bottom electrode, and an electrode layer deposited by a magnetron sputtering film technology to form an upper electrode of the device. The self rectification characteristic of the device can well solve the leakage current problem in a three-dimensional array, and also avoids problems such as high cost, complex structure and inability to realize miniaturization caused by additional rectifier devices of the device, and provides a simple and efficient solution for the realization of high-density multi-value storage of the memristor. The ZnO thin film memristor adopts a W / ZnO / FTO device structure, and through ordered regulation of the limited current of the device, controllable modulation of non-volatile self-rectification multi-value storage of the device is realized, and the ZnO thin film memristor has important development prospects in the application of the next generation of non-volatile high-density memory.

The invention relates to a three-dimensional embedded nonvolatile memory, a manufacturing method, a chip, a device and equipment, a plurality of memory layers are vertically stacked, each memory layer comprises a plurality of self-selection memories, so that more self-selection memories can be integrated in a unit area through a vertically stacked three-dimensional framework, the memory capacity is improved, and the memory performance is improved. According to the method, the high-density storage requirement can be met, for example, the storage requirement of a large language model can be met, in-memory calculation and near-memory calculation are supported, and high-bandwidth and low-delay matrix vector multiplication acceleration capacity is achieved; according to the self-selection memory, self-selection storage can be realized when the threshold voltage is reached, extra area overhead caused by introduction of a transistor is avoided, the area of a single memory is reduced, the structure of a storage layer is simplified, and the integration level of the memory is improved.

An integration process including an etch stop layer for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and / or threshold gate.

The utility model provides an injection storing and discharging mechanism which is characterized by comprising a medicine storing mechanism, a reciprocating mechanism, a ratchet wheel rotating mechanism and injections. The medicine storage mechanism comprises a base, a top cover, a front gear, a rear gear and a toothed belt, the base is placed in a horizontal state and is provided with an upward opening, the front gear, the rear gear and the toothed belt are arranged in the base, an injection storage position is formed between the toothed belt and the base, and injections are orderly arranged in the injection storage position; the base is fixedly connected with the top cover, and the top cover is connected with the front gear and the rear gear. The reciprocating mechanism and the ratchet wheel rotating mechanism are arranged at the bottom of the medicine outlet end of the medicine storage mechanism. The injection storing and discharging mechanism is innovative in design and simple in structure, and high-density storage and accurate discharging of injections are achieved.

The invention provides a pressure change memory. Each pressure change memory unit comprises a first electrode, a first dielectric layer, a memory function layer, a second dielectric layer and a second electrode which are sequentially arranged from top to bottom, the storage function layer has an amorphous characteristic and a defect state with the concentration higher than 10 < 14 > cm <-3 >, and the component is selected from a sulfur threshold switch material, an oxide, a nitride or a solar cell material. The device realizes controllable offset of threshold voltage under the action of forward and reverse electric fields, and takes the voltage difference as a read-write window, thereby realizing nonvolatile information storage. Through asymmetric structure design, storage function layer multi-layer design or PN junction introduction, a read-write window can be further expanded, and the reliability of data discrimination is improved. The memory is simple in structure and easy to integrate, has the characteristics of high speed and low power consumption, and is suitable for three-dimensional stacked high-density storage application.