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Method for preparing titanium-stibium-tellurium (Ti-Sb-Te) phase change material and method for preparing phase change storage unit

A phase-change material and phase-change storage technology, applied in the field of microelectronics, can solve problems such as weak data retention, low crystallization temperature, and high power consumption of devices, and achieve low power consumption, good film compactness, and accurate and reliable thickness. control effect

Active Publication Date: 2013-03-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The most commonly studied phase change material is Ge 2 Sb 2 Te 5 (GST), but its crystallization temperature is low, the power consumption of the device is large, and the data retention is not strong. The development of new phase change materials has always been an important task for material researchers.
[0005] Titanium-antimony-tellurium (TiSbTe) is a new type of phase change material, which has the characteristics of fast phase change, good data retention and high crystallization temperature. The current preparation is by sputtering method. Reports on material chemical preparation methods and related patents

Method used

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  • Method for preparing titanium-stibium-tellurium (Ti-Sb-Te) phase change material and method for preparing phase change storage unit
  • Method for preparing titanium-stibium-tellurium (Ti-Sb-Te) phase change material and method for preparing phase change storage unit
  • Method for preparing titanium-stibium-tellurium (Ti-Sb-Te) phase change material and method for preparing phase change storage unit

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Embodiment 1

[0045] Such as Figure 1~Figure 3 As shown, this embodiment provides a method for preparing a titanium-antimony-tellurium phase change material by atomic layer deposition, comprising the following steps:

[0046] 1) Introduce Sb precursor SbCl on the substrate 3 Pulse to wash unabsorbed SbCl 3 , and then introduce Te precursor (R 3 Si) 2 Te pulse, cleaning unabsorbed (R 3 Si) 2 Te and reaction by-products;

[0047] 2) Introduce Ti precursor TiCl to the above substrate 4 Pulse to clean residual TiCl 4 , and then introduce Te precursor (R 3 Si) 2 Te pulse, cleaning residue (R 3 Si) 2 Te and reaction by-products;

[0048] 3) Introduce Sb precursor SbCl to the above substrate 3 Pulse, wash residual SbCl 3 , and then introduce the precursor of Sb (R 3 Si) 3 Sb pulse, cleaning unabsorbed (R 3 Si) 3 Sb and reaction by-products.

[0049] In this embodiment, one or more steps in steps 1), 2) and 3) can be repeated until a titanium-antimony-tellurium phase-change mater...

Embodiment 2

[0062] Such as Figure 4~Figure 9 As shown, the present embodiment provides a preparation method of a phase-change memory unit. The phase-change memory composed of the phase-change memory unit can be a variety of functional devices that use the principle of phase change to store data, such as using electric pulse programming Chalcogenide random access memory, or a storage disc programmed by laser pulses, or a memory programmed by electron beams, or a memory programmed by other energy particles, the preparation method of the phase change memory unit includes the following steps:

[0063] Such as Figure 4 As shown, step 1) is first performed, providing a semiconductor substrate 101 , and preparing the lower electrode 102 on the surface of the semiconductor substrate 101 . Specifically, the semiconductor substrate 101 is cleaned first, and then the lower electrode 102 is deposited on its surface, which can remove organic matter, metal ions, oxides and other impurities on the su...

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Abstract

The invention provides a method for preparing a titanium-stibium-tellurium (Ti-Sb-Te) phase change material and a method for preparing a phase change storage unit. The method for preparing the Ti-Sb-Te phase change material comprises the following steps: 1) introducing a precursor SbCl3 pulse of Sb to a substrate, washing away unabsorbed SbCl3, then introducing a precursor (R3Si)2Te pulse of Te and washing away the unabsorbed (R3Si)2Te and by-products of reaction; 2) introducing a TiCl4 pulse of Ti to the substrate, washing away the residual TiCl4, then introducing the precursor (R3Si)2Te pulse of Te and washing away the residual (R3Si)2Te and by-products of reaction; and 3) introducing a precursor SbCl3 pulse of Sb to the substrate, washing away the residual SbCl3, then introducing a (R3Si)3Sb of Sb and washing away the unabsorbed (R3Si)3Sb and by-products of reaction. The Ti-Sb-Te phase change material prepared by using the method has the characteristics of accurately controllable thickness, good film compactness and strong pore-filling capability. A phase change film prepared by using the method can realize high-density storage when applied to a memorizer, and meanwhile a low power-cost device can be obtained.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for preparing a titanium-antimony-tellurium phase-change material and a preparation method for a phase-change storage unit. Background technique [0002] Phase change memory (PCM) is an emerging semiconductor memory. Compared with various semiconductor storage technologies currently available, it includes conventional volatile technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM), etc. , and non-volatile technologies, such as dielectric random access memory (FeRAM), electrically erasable programmable read-only memory (EEPROM), flash memory (FLASH), etc., have non-volatile, long cycle life (>10 13 time), small component size, low power consumption, multi-level storage, high-speed reading, anti-radiation, high and low temperature resistance (-55~125°C), anti-vibration, anti-electronic interference and simple m...

Claims

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Application Information

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IPC IPC(8): C23C16/44C23C16/08H01L45/00
Inventor 宋三年宋志棠吴良才饶峰刘波朱敏
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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