Method for in-situ preparationof oxide/metal ferromagnetic heterojunction through atomic layer deposition method

An atomic layer deposition method, atomic layer deposition technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc. And other issues

Active Publication Date: 2016-09-07
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since these methods are carried out at high temperature either during the deposition process or during the annealing process, the preparation of Fe on flexible polymer substrates 3 o 4 thin film impossible
In addition, with the continuous improvement of performance requirements, it is necessary to prepare a thin film with a thickness of several nanometers on the surface of a three-dimensional structure (such as a trench with a large aspect ratio, a 3D fin structure, etc.), and the above-mentioned methods are limited by the deposition principle. It cannot produce thin films with highly controllable thickness and composition on the surface of complex three-dimensional structures, which hinders the realization of practical applications

Method used

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  • Method for in-situ preparationof oxide/metal ferromagnetic heterojunction through atomic layer deposition method
  • Method for in-situ preparationof oxide/metal ferromagnetic heterojunction through atomic layer deposition method
  • Method for in-situ preparationof oxide/metal ferromagnetic heterojunction through atomic layer deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1) Substrate preparation: Rinse the Pt substrate required for the experiment with acetone, distilled water, and isopropanol in sequence, and then dry it with dry high-purity nitrogen for later use;

[0030]2) Using ferrocene as the iron source and oxygen as the oxygen source to deposit ferric oxide. Put the ferrocene into the special solid-state source cylinder of the atomic layer deposition system and heat it to 150°C to ensure that the ferrocene source has enough vapor pressure to ensure the stability of the pulse source; connect the oxygen to the atomic layer deposition system through a dedicated pipeline The reaction chamber is ready for use. Pre-evacuate the ferrocene source cylinder before starting deposition to remove possible trapped air in the tubing and source cylinder.

[0031] 3) Send the cleaned substrate in step 1) into the reaction chamber through the vacuum mechanical loading arm of the ALD system, set the temperature of the reaction chamber to 400°C, a...

Embodiment 2

[0035] 1) Substrate preparation: Rinse the FeCo substrate required for the experiment with acetone, distilled water, and isopropanol in sequence, and then dry it with nitrogen for later use.

[0036] 2) Using ferrocene as the iron source and oxygen as the oxygen source to deposit ferric oxide. Put the ferrocene into the special solid-state source cylinder of the atomic layer deposition system and heat it to 140°C to ensure that the ferrocene source has enough vapor pressure to ensure the stability of the pulse source; connect the oxygen to the atomic layer deposition system through a dedicated pipeline The reaction chamber is ready for use. Pre-evacuate the ferrocene source cylinder before starting deposition to remove possible trapped air in the tubing and source cylinder.

[0037] 3) Send the cleaned substrate in step 1) into the reaction chamber through the robot arm, set the temperature of the chamber to 350°C, and when the temperature of the chamber reaches the set tempe...

Embodiment 3

[0041] 1) Substrate preparation: Rinse the ITO substrate required for the experiment with acetone, distilled water, and isopropanol in sequence, and then dry it with nitrogen for later use;

[0042] 2) Using ferrocene as the iron source and oxygen as the oxygen source to deposit ferric oxide. Put the ferrocene into the special solid-state source cylinder of the atomic layer deposition system and heat it to 135°C to ensure that the ferrocene source has enough vapor pressure to ensure the stability of the pulse source; connect the oxygen to the atomic layer deposition system through a dedicated pipeline The reaction chamber is ready for use. Pre-evacuate the ferrocene source cylinder before starting deposition to remove possible trapped air in the tubing and source cylinder.

[0043] 3) Send the cleaned substrate in step 1) into the reaction chamber through the robot arm, set the temperature of the chamber to 350°C, and when the temperature of the chamber reaches the set temper...

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PUM

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Abstract

The invention provides a method for in-situ preparation of an oxide/metal ferromagnetic heterojunction through an atomic layer deposition method. According to the method, the atomic layer deposition method is adopted, ferrocene serves as a Fe source, oxygen serves as an oxygen source, and ferroferric oxide is deposited on metal substrates; and by means of an atomic layer deposition system, ferrocene and oxygen are alternately introduced to a reaction cavity of the atomic layer deposition system, deposition of ferroferric oxide on different metal substrates is realized, and then the oxide/metal ferromagnetic heterojunction is established. The oxide/metal ferromagnetic heterojunction prepared through the method has the advantages that cost is low, the components and the thickness of a film can be precisely controlled, and three-dimensional uniform shape preserving is good and can serve as a key device for magnetoelectric coupling control.

Description

technical field [0001] The invention belongs to the field of electronic thin film materials and magnetic thin film material devices, and relates to a method for preparing an oxide / metal ferromagnetic heterojunction in situ by atomic layer deposition (ALD). Background technique [0002] With the continuous development of science and technology, the size of electronic products is getting smaller and smaller, and the storage density and operating speed of traditional devices are getting closer and closer to their physical limits. Consider electron spin. Spintronics is a subject that studies electronic devices based on the spin-polarized transport properties of electrons. As a new subject, its development still faces many challenges. Ferric oxide (Fe 3 o 4 ) is an important 3d transition metal compound, and its electron spin polarizability is very high. It is one of the materials that may realize industrial application in spintronics. Common growth methods of Fe3O4 thin film...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/02
CPCC23C16/0227C23C16/406C23C16/45525
Inventor 刘明张乐任巍张易军
Owner XI AN JIAOTONG UNIV
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