Preparation method of n ion-doped cerium dioxide film

An ion doping, ceria technology, used in ion implantation plating, electrochemical generators, final product manufacturing, etc., can solve problems such as environmental pollution, achieve firm bonding, accurate and controllable thickness, and improve ionic conductivity. Effect

Active Publication Date: 2017-09-15
CHANGCHUN UNIV
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Problems solved by technology

[0004] In view of this, the object of the present invention is to provide a kind of N ion doped CeO 2 Thin film preparation method, N ion doped CeO prepared under low temperature conditions 2 The solid oxide fuel cell electrolyte film overcomes the environmental pollution problems caused by the use of high temperature and organic solvents in the past by chemical preparation methods

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  • Preparation method of n ion-doped cerium dioxide film
  • Preparation method of n ion-doped cerium dioxide film
  • Preparation method of n ion-doped cerium dioxide film

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preparation example Construction

[0023] The invention provides a kind of N ion doped CeO 2 The preparation method of thin film, comprises the following steps:

[0024] (1) In Ar and N 2 In the mixed atmosphere of , the CeN film was obtained by magnetron sputtering with metal Ce as the target;

[0025] (2) Oxidize the CeN film prepared in the step (1) to obtain N 3- Doped CeO 2 film.

[0026] In the present invention, Ar and N 2 CeN thin films were obtained by magnetron sputtering in a mixed atmosphere with metallic Ce as the target. In the present invention, the gas flow rate of Ar is preferably 30-60 cm 3 / min, more preferably 40-50cm 3 / min; the N 2 The gas flow rate is preferably 5 ~ 10cm 3 / min, more preferably 6-8cm 3 / min.

[0027] In the present invention, the Ar and N are preferably 2 Pass in the vacuum chamber simultaneously or pass in the vacuum chamber respectively, the pressure of the vacuum chamber is preferably 9.5×10 -5 ~2.0×10 -4 Pa, more preferably 1.0×10 -4 ~1.5×10 -4 Pa; the...

Embodiment 1

[0039] Metal Ce is placed on the radio frequency cathode as a sputtering target, and the background pressure of the vacuum chamber reaches 9.5×10 -5 At Pa, feed Ar gas and N into the vacuum chamber at the same time 2 Gas, the gas flow rate is controlled at 30cm 3 / min and 5cm 3 / min, the sputtering pressure was controlled at 0.8Pa, the radio frequency power was 50W, and magnetron sputtering was carried out at 25°C for 2 hours to obtain a CeN thin film.

[0040] Take out the above-mentioned CeN film in the vacuum chamber and place it in the air for natural oxidation to obtain N 3- Doped CeO 2 Thin film, respectively measure the XRD pattern of the thin film sample when the oxidation time is 6 minutes, 8 hours, 15 hours and 2 days, the test results are as follows figure 1 shown. From figure 1 It can be seen from the figure that when the oxidation time is 6 minutes, the diffraction peak of the CeN phase can still be seen very clearly, indicating that the film sample has not ...

Embodiment 2

[0044] Metal Ce is placed on the radio frequency cathode as a sputtering target, and the background pressure of the vacuum chamber reaches 2.0×10 -4 At Pa, feed Ar gas and N into the vacuum chamber at the same time 2 Gas, the gas flow rate is controlled at 60cm 3 / min and 10cm 3 / min, the sputtering pressure was controlled at 2Pa, the radio frequency power was 200W, and magnetron sputtering was performed at 200°C for 4 hours to obtain a CeN thin film.

[0045] After taking out the CeN thin film in the vacuum chamber and placing it in the air for natural oxidation at room temperature for 20 days, the N 3- Doped CeO 2 film.

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Abstract

The invention provides a preparation method of an N<3-> doped CeO2 film. The preparation method comprises the steps of carrying out magnetron sputtering in an Ar and N2 mixed atmosphere with metal Ce adopted as a target material, so as to obtain a CeN film; and oxidizing the obtained CeN film, so as to obtain the N<3-> doped CeO2 film. According to the preparation method, the N<3-> doped CeO2 solid oxide fuel battery electrolyte film is prepared through magnetron sputtering under the low temperature condition, the environmental pollution problem caused by the fact that high temperature and organic solvents need to be adopted when conventionally a chemical preparation method is adopted is solved, and compared with a traditional chemical method, the preparation method has the advantages that uniformity of the prepared material is good, thickness is accurate and controllable, the material and a substrate are firmly combined, and the material can be utilized to prepare nanocrystalline films.

Description

technical field [0001] The invention relates to the technical field of solid oxide fuel cell electrolyte film preparation, in particular to a kind of N ion-doped CeO 2 The method of film preparation. Background technique [0002] A solid oxide fuel cell (SOFC) is an all-solid-state energy conversion device that electrochemically combines fuel gas and oxidant gas through ion-conducting oxides to generate electricity. The electrolyte in traditional SOFC is Y 2 o 3 Stable ZrO 2 (abbreviated as YSZ), the ideal oxygen ion conductivity must be obtained at high temperature (900-1000°C), while CeO 2 The oxygen ion conductivity of the base electrolyte at medium temperature (500-800°C) is several times higher than that of YSZ. In recent years, most of the research work on medium-temperature electrolyte materials has focused on CeO with a cubic fluorite structure. 2 on the base material. [0003] Pure CeO 2 The electrical conductivity is low, and its electrical conductivity can ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58H01M8/126
CPCC23C14/0036C23C14/0641C23C14/35C23C14/5853H01M8/126Y02E60/50Y02P70/50
Inventor 安涛邓晓芳王爽刘淑杰高玉欣
Owner CHANGCHUN UNIV
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