7 results about "Nanocrystalline thin films" patented technology

The invention discloses a low-loss high-frequency transformer based on nanocrystalline alloy, and belongs to the technical field of transformers, the low-loss high-frequency transformer comprises a mounting plate, an n-shaped framework, a columnar magnetic core, a winding and a protective heat dissipation mechanism, the columnar magnetic core is of a three-column type composite structure and is formed by staggering and laminating nanocrystalline thin film layers and ferrite sheet layers, a stepped air gap structure and an insulating isolation layer are arranged on the outer surface; and the winding leading-out end is connected with an external circuit through symmetrically distributed plug connectors. The protective heat dissipation mechanism is composed of an epoxy layer containing boron nitride filler, a heat conduction ring, heat dissipation fins, a heat dissipation fan and a flow guide plate. The advantages of nanocrystalline and ferrite materials are combined, a composite heat dissipation system is matched, the magnetic core loss under the high-frequency working condition is remarkably reduced, temperature rise is effectively controlled, the insulation performance and assembly stability are improved, low-loss, high-efficiency and high-stability operation is achieved, and the requirements of the fields of new energy automobiles, photovoltaic energy storage and the like are met.

The invention provides an AlBN nanocrystalline film and a preparation method thereof. The preparation method comprises the following steps: forming a ternary amorphous AlBN film on the surface of a substrate; the substrate with the ternary amorphous AlBN thin film formed on the surface is placed in the visual field of an electron microscope or a microscope equipped with a laser direct writing system, electron beams of the electron microscope or laser beams of the laser direct writing system are adopted to irradiate the ternary amorphous AlBN thin film so as to induce crystallization of the ternary amorphous AlBN thin film, and the AlBN nanocrystalline thin film is generated. According to the method, the ternary amorphous AlBN thin film can be induced to be converted into the AlBN nanocrystalline thin film, the crystallization range can be accurately controlled through the observation performance of an electron microscope and a laser direct writing microscope, in-situ research can be conducted on the crystallization process in time, and the method integrates preparation, observation and research.

This application discloses a supercapacitor working electrode, its fabrication method, and the supercapacitor itself, belonging to the field of capacitor technology. The supercapacitor working electrode of this application comprises a conductive substrate and an electrode active layer grown in situ on the surface of the conductive substrate. The electrode active layer comprises an inorganic metal oxide nanocrystalline film, which is a continuous conductive structure formed by the interconnection of single chiral inorganic metal oxide nanocrystals. The supercapacitor working electrode of this application possesses a chiral-induced spin-selectivity effect, achieving spin-polarized charge transport without relying on magnetohydrodynamic convection / Lorentz force driving, effectively improving the specific capacitance, rate performance, and cycle stability of the supercapacitor.

This invention belongs to the field of semiconductor nanofilm technology, specifically relating to a ternary metal sulfide nanocrystalline thin film, its preparation method, and its applications. Based on a low-temperature solution process, this invention innovatively employs a two-step method to prepare ternary metal sulfide nanocrystalline thin films in situ on a substrate. First, a molecular precursor is prepared by dissolving a metal salt using a short-chain organic amine as a solvent. The soft template effect of the organic linear amine is then used to prepare a porous cationic thin film on the substrate. Subsequently, a sulfur source precursor solution is prepared by dissolving a sulfur source in acetone, an orthogonal solvent that does not damage the cationic thin film. This solution is then used to treat the cationic thin film multiple times before low-temperature annealing to form the ternary metal sulfide nanocrystalline thin film. The prepared film exhibits high-purity phase, standard stoichiometry, and excellent light absorption performance. The film surface shows no obvious agglomeration and exhibits good flatness and density. It has great application potential as an absorption layer for various optoelectronic devices.

The invention relates to a two-dimensional chalcogenide nanocrystalline film, an M source growth substrate, a preparation method and application. And the domain size of the two-dimensional chalcogenide nanocrystalline film is less than or equal to 70nm. The preparation method comprises the following steps: selecting ammonium salt of M acid radical as an M source, and preparing an M source solution; coating an aluminum oxide substrate with the M source solution, and heating to obtain an M source precursor; and placing the M source precursor in an inert atmosphere, raising the temperature to a growth temperature, introducing an X-carrying gas source, and maintaining the growth temperature to grow the two-dimensional chalcogenide nanocrystalline film. The crystal domain of the two-dimensional chalcogenide nanocrystalline film can be controlled below 70nm, so that the two-dimensional chalcogenide nanocrystalline film becomes an ideal carrier for constructing a high-safety physical unclonable function; the preparation method of the two-dimensional chalcogenide nanocrystalline thin film comprises the following steps: firstly, obtaining a MOy nanocluster thin film anchored by a local interface, and carrying out reverse epitaxial vulcanization on an MXn two-dimensional chalcogenide nanocrystalline thin film prepared by taking the MOy nanocluster thin film as a precursor to obtain the two-dimensional chalcogenide nanocrystalline thin film of which the crystal domain size is less than or equal to 70nm.

The invention discloses a crystalline molybdenum-doped tungsten oxide nanocrystalline film and a preparation method and application thereof, and the method comprises the following steps: uniformly mixing tungsten hexachloride, an organic matter and molybdenum acetylacetonate with a solvent to prepare a molybdenum-doped precursor solution; the precursor solution is heated to 180-240 DEG C, heat preservation is conducted for 3-5 hours, and a molybdenum-doped tungsten oxide nanocrystalline solution is obtained; the preparation method comprises the following steps of: filtering and washing for multiple times, drying to obtain molybdenum-doped tungsten oxide nanocrystalline powder, dissolving the powder in methylbenzene to obtain printing ink, and spin-coating ITO (Indium Tin Oxide) conductive glass to obtain the molybdenum-doped tungsten oxide nanocrystalline film. The molybdenum-doped tungsten oxide nanocrystalline film with a high crystalline state is obtained by adopting a two-step annealing method and has the characteristics of large optical modulation range, long cycle life, good energy storage effect and the like, and neutral color conversion of the tungsten oxide film in a color changing process is realized. The material can be applied to various occasions such as new energy automobile sunroofs and electrochromic intelligent windows.

The invention discloses a high-performance core-shell colloidal quantum well nanocrystal, a colloidal nanocrystal self-assembly echo wall mode laser and a preparation method thereof, and belongs to the technical field of lasers. The preparation method of the laser comprises the following steps: immersing a silica fiber into a high-performance core-shell colloidal quantum well nanocrystalline solution through a capillary effect, and after the silica fiber is fully infiltrated and filled with the high-performance core-shell colloidal quantum well nanocrystalline solution, carrying out high-performance core-shell colloidal quantum well nanocrystalline solution; the silica optical fiber is horizontally placed so that nanocrystals in the silica optical fiber can be gradually gathered at the end of the silica optical fiber along with volatilization of a solvent, the nanocrystals are self-assembled on the inner surface of the silica optical fiber to form an annularly-distributed core-shell colloidal quantum well nanocrystal film, and the echo wall type optical microcavity structure is formed. The colloidal nanocrystal self-assembly echo wall mode laser takes the high-performance core-shell colloidal quantum well nanocrystal as a gain material, the preparation method is simple and efficient, the repeatability is high, and low-threshold and high-stability CQW-WGM laser output can be realized.