22 results about "Nanocrystalline thin films" patented technology

The invention discloses a low-loss high-frequency transformer based on nanocrystalline alloy, and belongs to the technical field of transformers, the low-loss high-frequency transformer comprises a mounting plate, an n-shaped framework, a columnar magnetic core, a winding and a protective heat dissipation mechanism, the columnar magnetic core is of a three-column type composite structure and is formed by staggering and laminating nanocrystalline thin film layers and ferrite sheet layers, a stepped air gap structure and an insulating isolation layer are arranged on the outer surface; and the winding leading-out end is connected with an external circuit through symmetrically distributed plug connectors. The protective heat dissipation mechanism is composed of an epoxy layer containing boron nitride filler, a heat conduction ring, heat dissipation fins, a heat dissipation fan and a flow guide plate. The advantages of nanocrystalline and ferrite materials are combined, a composite heat dissipation system is matched, the magnetic core loss under the high-frequency working condition is remarkably reduced, temperature rise is effectively controlled, the insulation performance and assembly stability are improved, low-loss, high-efficiency and high-stability operation is achieved, and the requirements of the fields of new energy automobiles, photovoltaic energy storage and the like are met.

The invention discloses a magnetic conductive ring body, an electromagnetic heating module and an electromagnetic heating smoking set, and the magnetic conductive ring body is configured to coaxially sleeve the periphery of a solenoid coil; the magnetic conductive ring body is of a cylindrical structure and is made of a composite material, and the composite material comprises magnetic powder and an electromagnetic inert carrier. According to the technical scheme, a material system formed by compounding the integrally-formed cylindrical structure, the magnetic powder and the electromagnetic inert carrier is adopted, the complex process of multi-layer winding of a traditional nanocrystalline film is avoided, the high consistency of magnetic circuit parameters of a product is ensured, performance discretization caused by process fluctuation such as inconsistent winding tightness and interlayer air gaps is avoided, and the reliability of the product is improved. In addition, external force impact and thermal expansion and cold contraction stress in the assembly and service process can be effectively resisted, the reliability defects that a traditional thin film magnetic conductive device is prone to deformation and cracking are overcome, the edge effect is effectively restrained through the continuous cylindrical magnetic circuit, and magnetic flux can be guided, regulated and controlled more efficiently.

The invention discloses a high-hydrophobicity surface deacetylated chitin nanocrystal package as well as a preparation method and application thereof, and relates to the technical field of materials. A preparation method of a high-hydrophobicity surface-deacetylated chitin nanocrystalline package comprises the following steps: pouring a surface-deacetylated chitin nanocrystalline solution into a culture dish, and slowly drying to obtain a surface-deacetylated chitin nanocrystalline film; and casting a layer of protein solution on the dried film until the surface of the film is immersed, placing a culture dish on an electric turntable, rotating at a constant rotating speed until the protein solution is uniformly diffused on the surface of the film, and drying the protein solution to obtain the high-hydrophobicity surface deacetylated chitin nanocrystal package. The film prepared by the method provided by the invention is simple to operate, the raw materials are all natural substances, no chemical residue exists, the film is healthier and suitable for food packaging, the research on the electrostatic self-assembly of the protein and the deacetylated chitin nanocrystals is less, and the electrostatic self-assembly market of the chitin nanocrystals can be impacted.

The invention provides a metal halide perovskite thin film with in-situ surface nanocrystallization. The metal halide perovskite thin film shows significantly enhanced fluorescent properties. The surface of the polycrystalline perovskite thin film is modified by adopting a phosphine oxide compound, irregular crystal grains can be converted into regular cubic nanocrystals in situ through a simple spin-coating process, and the method has good universality for perovskite with different components. Compared with the complex process of the traditional nanocrystalline prefabrication and device passivation step-by-step process, the method has the advantages that the preparation process of the metal halide perovskite thin film and the photoelectric device thereof is remarkably simplified, and the preparation cost is reduced. Particularly, the luminescent property of the perovskite thin film treated by the process is remarkably improved, the photoluminescence intensity is enhanced by more than one order of magnitude, and the electroluminescence intensity is improved by three times.

The invention provides an AlBN nanocrystalline film and a preparation method thereof. The preparation method comprises the following steps: forming a ternary amorphous AlBN film on the surface of a substrate; the substrate with the ternary amorphous AlBN thin film formed on the surface is placed in the visual field of an electron microscope or a microscope equipped with a laser direct writing system, electron beams of the electron microscope or laser beams of the laser direct writing system are adopted to irradiate the ternary amorphous AlBN thin film so as to induce crystallization of the ternary amorphous AlBN thin film, and the AlBN nanocrystalline thin film is generated. According to the method, the ternary amorphous AlBN thin film can be induced to be converted into the AlBN nanocrystalline thin film, the crystallization range can be accurately controlled through the observation performance of an electron microscope and a laser direct writing microscope, in-situ research can be conducted on the crystallization process in time, and the method integrates preparation, observation and research.

This application discloses a supercapacitor working electrode, its fabrication method, and the supercapacitor itself, belonging to the field of capacitor technology. The supercapacitor working electrode of this application comprises a conductive substrate and an electrode active layer grown in situ on the surface of the conductive substrate. The electrode active layer comprises an inorganic metal oxide nanocrystalline film, which is a continuous conductive structure formed by the interconnection of single chiral inorganic metal oxide nanocrystals. The supercapacitor working electrode of this application possesses a chiral-induced spin-selectivity effect, achieving spin-polarized charge transport without relying on magnetohydrodynamic convection / Lorentz force driving, effectively improving the specific capacitance, rate performance, and cycle stability of the supercapacitor.

This invention belongs to the field of semiconductor nanofilm technology, specifically relating to a ternary metal sulfide nanocrystalline thin film, its preparation method, and its applications. Based on a low-temperature solution process, this invention innovatively employs a two-step method to prepare ternary metal sulfide nanocrystalline thin films in situ on a substrate. First, a molecular precursor is prepared by dissolving a metal salt using a short-chain organic amine as a solvent. The soft template effect of the organic linear amine is then used to prepare a porous cationic thin film on the substrate. Subsequently, a sulfur source precursor solution is prepared by dissolving a sulfur source in acetone, an orthogonal solvent that does not damage the cationic thin film. This solution is then used to treat the cationic thin film multiple times before low-temperature annealing to form the ternary metal sulfide nanocrystalline thin film. The prepared film exhibits high-purity phase, standard stoichiometry, and excellent light absorption performance. The film surface shows no obvious agglomeration and exhibits good flatness and density. It has great application potential as an absorption layer for various optoelectronic devices.

The present invention discloses a graphene / lead sulfide infrared detector and its preparation method. The graphene / lead sulfide infrared detector comprises a substrate, which is sequentially covered with a graphene film, a metal electrode, a lead sulfide seed layer, and a lead sulfide nanocrystal film layer. The graphene film is provided with one of the metal electrodes at each end. The present invention introduces a lead sulfide seed layer onto the surfaces of the graphene and metal electrodes, using the seed layer to assist in the growth of lead sulfide nanocrystals, resulting in a dense, smooth, uniform, high-quality lead sulfide nanocrystal film layer, ultimately realizing a highly responsive infrared detector.

The invention relates to a two-dimensional chalcogenide nanocrystalline film, an M source growth substrate, a preparation method and application. And the domain size of the two-dimensional chalcogenide nanocrystalline film is less than or equal to 70nm. The preparation method comprises the following steps: selecting ammonium salt of M acid radical as an M source, and preparing an M source solution; coating an aluminum oxide substrate with the M source solution, and heating to obtain an M source precursor; and placing the M source precursor in an inert atmosphere, raising the temperature to a growth temperature, introducing an X-carrying gas source, and maintaining the growth temperature to grow the two-dimensional chalcogenide nanocrystalline film. The crystal domain of the two-dimensional chalcogenide nanocrystalline film can be controlled below 70nm, so that the two-dimensional chalcogenide nanocrystalline film becomes an ideal carrier for constructing a high-safety physical unclonable function; the preparation method of the two-dimensional chalcogenide nanocrystalline thin film comprises the following steps: firstly, obtaining a MOy nanocluster thin film anchored by a local interface, and carrying out reverse epitaxial vulcanization on an MXn two-dimensional chalcogenide nanocrystalline thin film prepared by taking the MOy nanocluster thin film as a precursor to obtain the two-dimensional chalcogenide nanocrystalline thin film of which the crystal domain size is less than or equal to 70nm.

The invention discloses a preparation method of a cellulose nanocrystal film for adulterated wine detection, which comprises the following steps: S1, preparing cellulose nanocrystals into a cellulose nanocrystal solution with the mass concentration of 1-4%, adding the cellulose nanocrystal solution into the cellulose nanocrystal solution, and uniformly mixing to obtain a mixed solution; wherein the mass ratio of the maltodextrin to the cellulose nanocrystals in the cellulose nanocrystal solution is (2-7): 20; and S2, forming a film by using the mixed solution obtained in the step S1, and drying to obtain the cellulose nanocrystalline film. The cellulose nanocrystalline thin film prepared by the preparation method can be used for adulterated wine watering detection, the detection limit of water in ethanol is as low as 1% (volume concentration), the cellulose nanocrystalline thin film can respond quickly, and meanwhile, the cellulose nanocrystalline thin film has excellent mechanical property and reusability, and cannot be broken in the detection of adulterated wine with high watering amount (the watering amount is greater than 10%).

The utility model discloses an ultrathin nanocrystalline wireless charging module, which relates to the technical field of wireless charging modules, and comprises a coil and a magnetic isolation sheet assembly which are sequentially arranged from top to bottom, the magnetic isolation sheet assembly comprises a nanocrystalline magnetic isolation sheet, and the upper surface and the lower surface of the nanocrystalline magnetic isolation sheet are respectively provided with a first back adhesive layer and a second back adhesive layer. A ferrite magnetic isolation sheet is attached to the middle of the nanocrystalline magnetic isolation sheet through a first back adhesive layer, the area, located on the outer side of the ferrite magnetic isolation sheet, of the nanocrystalline magnetic isolation sheet is attached to the coil through the first back adhesive layer, and a release protective film is attached to the lower surface of the nanocrystalline magnetic isolation sheet through a second back adhesive layer. According to the utility model, the magnetic isolation sheet assembly composed of the nanocrystalline magnetic isolation sheet, the first back glue layer, the second back glue layer, the ferrite magnetic isolation sheet and the release protective film is arranged, and the nanocrystalline magnetic isolation sheet is made of a material which is formed by superposing 4-12 layers of nanocrystalline films and has a thickness of 0.1-0.5 mm, so that the wireless charging module has an ultrathin effect, is suitable for installation in a smaller space, and is convenient to use. And the magnetic isolation effect is obvious.

This invention discloses a tungsten-doped nickel oxide nanocrystalline electrochromic thin film, which is composed of stacked nanocrystalline particles with a particle size of approximately 4 nm. The invention also discloses a method for preparing the tungsten-doped nickel oxide nanocrystalline electrochromic thin film, combining a solvothermal method with magnetron sputtering to obtain the tungsten-doped nickel oxide nanocrystalline thin film. The doped thin film of this invention effectively improves upon the problems of yellowing in the fading state, small charge capacity, and poor cycle life existing in current NiO electrochromic materials, providing a new approach for constructing high-performance electrochromic devices with strong color-changing effects, high energy efficiency, and long service life.

The invention discloses an ultraviolet photoelectric detector based on a ZnO nanocrystal heterojunction and a preparation method of the ultraviolet photoelectric detector. The ultraviolet photoelectric detector comprises a substrate, an n-type ZnO nanocrystal thin film layer, a ZnO-NiOx nanocrystal thin film layer and a p-type NiOx nanocrystal thin film layer, wherein the n-type ZnO nanocrystal thin film layer, the ZnO-NiOx nanocrystal thin film layer and the p-type NiOx nanocrystal thin film layer are sequentially arranged on the substrate; the ZnO-NiOx nanocrystalline thin film layer is a bulk heterojunction layer which is constructed by mixing NiOx nanocrystalline with ZnO nanocrystalline; wherein Au lower electrode layers are arranged on the two sides of the substrate respectively, and an Au upper electrode layer is arranged on the surface of the p-type NiOx nanocrystalline thin film layer, so that the diffusion distance of excitons can be shortened, the charge separation efficiency can be improved, the recombination loss can be reduced, and the photoelectric conversion efficiency can be improved by adding a bulk heterojunction layer formed by mixing NiOx nanocrystalline with ZnO nanocrystalline between the p layer and the n layer.

The present invention relates to a process for synthesizing europium-doped cadmium sulfide (CdS:Eu) nanocrystalline thin films. Europium-doped CdS nanocrystalline thin films are synthesized via green chemical bath deposition using Azadirachta indica leaf extract (10 g / 40 mL) as capping / reducing agent with cadmium acetate, thiourea, ammonia (pH 10), TEA, and Eu(NO₃)₃ (0.01-0.1 M) at 60°C / 60 min on glass substrates. XRD confirms hexagonal wurtzite structure with lattice expansion; UV-Vis shows band gap redshift (3.3 to 2.2 eV); PL reveals Eu³⁺ emissions (616-620 nm, optimal at 0.01 M). DFT (SIESTA, GGA-PBE) validates 4f gap states and stability (-3.53 eV / atom). This sustainable method tunes optical properties for photonic / optoelectronic devices.

The invention discloses a crystalline molybdenum-doped tungsten oxide nanocrystalline film and a preparation method and application thereof, and the method comprises the following steps: uniformly mixing tungsten hexachloride, an organic matter and molybdenum acetylacetonate with a solvent to prepare a molybdenum-doped precursor solution; the precursor solution is heated to 180-240 DEG C, heat preservation is conducted for 3-5 hours, and a molybdenum-doped tungsten oxide nanocrystalline solution is obtained; the preparation method comprises the following steps of: filtering and washing for multiple times, drying to obtain molybdenum-doped tungsten oxide nanocrystalline powder, dissolving the powder in methylbenzene to obtain printing ink, and spin-coating ITO (Indium Tin Oxide) conductive glass to obtain the molybdenum-doped tungsten oxide nanocrystalline film. The molybdenum-doped tungsten oxide nanocrystalline film with a high crystalline state is obtained by adopting a two-step annealing method and has the characteristics of large optical modulation range, long cycle life, good energy storage effect and the like, and neutral color conversion of the tungsten oxide film in a color changing process is realized. The material can be applied to various occasions such as new energy automobile sunroofs and electrochromic intelligent windows.

The present invention discloses a method for changing the structure and performance of a columnar crystal alloy film by irradiation and a method for preparing an alloy film. The invention belongs to the technical field of nanocrystalline alloy film preparation methods. The present invention uses an ion irradiation method to change the columnar crystals of an alloy film into an amorphous-coated nanocrystalline dual-phase structure, so as to achieve the purpose of regulating the performance of a nanocrystalline film; the method comprises the following steps: preparing a columnar crystal nano alloy film; subjecting the columnar crystal alloy film to ion irradiation of different doses, observing the structure of the alloy film after irradiation, and testing its hardness. Obtaining a relationship curve between the dose of ion irradiation and the changes in the structure and performance of the columnar crystal nano alloy film; determining a suitable irradiation dose based on the relationship curve between the dose of ion irradiation and the changes in the structure and performance of the columnar crystal alloy film, and preparing an alloy film that meets engineering requirements. The present invention irradiates a columnar crystal alloy by ion irradiation, changes the columnar crystal structure of the alloy film, and then regulates its performance.

The invention provides noble metal-free electro-catalyst compositions for use in acidic media, e.g., acidic electrolyte. The noble metal-free electro-catalyst compositions include non-noble metal absent of noble metal. The non-noble metal is non-noble metal oxide, and typically in the form of any configuration of a solid or hollow nano-material, e.g., nano-particles, a nanocrystalline thin film, nanorods, nanoshells, nanoflakes, nanotubes, nanoplates, nanospheres and nanowhiskers or combinations of myriad nanoscale architecture embodiments. Optionally, the noble metal-free electro-catalyst compositions include dopant, such as, but not limited to halogen. Acidic media includes oxygen reduction reaction (ORR) in proton exchange membrane (PEM) fuel cells, and direct methanol fuel cells and oxygen evolution reaction (OER) in PEM-based water electrolysis and metal air batteries, and hydrogen generation from solar energy and electricity-driven water splitting.

The invention discloses a high-performance core-shell colloidal quantum well nanocrystal, a colloidal nanocrystal self-assembly echo wall mode laser and a preparation method thereof, and belongs to the technical field of lasers. The preparation method of the laser comprises the following steps: immersing a silica fiber into a high-performance core-shell colloidal quantum well nanocrystalline solution through a capillary effect, and after the silica fiber is fully infiltrated and filled with the high-performance core-shell colloidal quantum well nanocrystalline solution, carrying out high-performance core-shell colloidal quantum well nanocrystalline solution; the silica optical fiber is horizontally placed so that nanocrystals in the silica optical fiber can be gradually gathered at the end of the silica optical fiber along with volatilization of a solvent, the nanocrystals are self-assembled on the inner surface of the silica optical fiber to form an annularly-distributed core-shell colloidal quantum well nanocrystal film, and the echo wall type optical microcavity structure is formed. The colloidal nanocrystal self-assembly echo wall mode laser takes the high-performance core-shell colloidal quantum well nanocrystal as a gain material, the preparation method is simple and efficient, the repeatability is high, and low-threshold and high-stability CQW-WGM laser output can be realized.

The invention provides noble metal-free electro-catalyst compositions for use in acidic media, e.g., acidic electrolyte. The noble metal-free electro-catalyst compositions include non-noble metal absent of noble metal. The non-noble metal is non-noble metal oxide, and typically in the form of any configuration of a solid or hollow nano-material, e.g., nano-particles, a nanocrystalline thin film, nanorods, nanoshells, nanoflakes, nanotubes, nanoplates, nanospheres and nanowhiskers or combinations of myriad nanoscale architecture embodiments. Optionally, the noble metal-free electro-catalyst compositions include dopant, such as, but not limited to halogen. Acidic media includes oxygen reduction reaction (ORR) in proton exchange membrane (PEM) fuel cells, and direct methanol fuel cells and oxygen evolution reaction (OER) in PEM-based water electrolysis and metal air batteries, and hydrogen generation from solar energy and electricity-driven water splitting.

The invention relates to the technical field of electroluminescent materials, in particular to a metal halide perovskite nanocrystalline film and a preparation method and application thereof, and the method comprises the following steps: providing cesium bromide, lead bromide and an organic amine ligand; the preparation method comprises the following steps: dissolving cesium bromide and lead bromide in N, N-dimethylformamide to obtain a precursor solution; dissolving an organic amine ligand in the precursor solution to obtain a precursor-ligand mixed solution; and spin-coating the precursor-ligand mixed solution on a substrate, and carrying out annealing treatment to obtain the metal halide perovskite nanocrystalline film loaded on the substrate. The method can effectively inhibit the defect formation of the metal halide perovskite nanocrystalline film, and improves the photoluminescence performance of the metal halide perovskite nanocrystalline film.

The invention belongs to the technical field of optical communication, and particularly relates to a high-concentration erbium-doped high-brightness communication band silicon-based light-emitting film and a preparation method thereof. According to the invention, HSQ is taken as a solvent, erbium nitrate pentahydrate is taken as a source of erbium element, and the erbium-doped silicon-based luminescent film with high brightness is obtained through co-doping of ytterbium ions and independent silicon quantum dots, stirring, spin-coating and high-temperature annealing. The HSQ photoresist is used as a precursor material for preparing the silicon nanocrystalline thin film, and after erbium is doped, high-temperature annealing is carried out, so that the formed thin film contains a large amount of silicon nanocrystalline. The silicon nanocrystal serves as a sensitizer in the energy transfer process, absorbs incident photon energy and then transfers and activates erbium ions, and photoluminescence with the emission center wavelength being 1.54 microns is achieved. According to the method, a large number of defects generated by an ion implantation method are avoided, the high vacuum degree does not need to be maintained, the prepared erbium-doped thin film has the advantage that the concentration of silicon nanocrystals serving as an erbium light-emitting sensitizer is high, the preparation steps are simple, and operation is safe.

The invention relates to the technical field of new materials, in particular to a method for precisely regulating and controlling the electron mobility and conductivity of SnO2 nanocrystals in a large range through P-type doping, which comprises the following steps: (1) replacing tetravalent Sn4 + ions with low-valence metal ions to form P-type doping and form electron acceptors in nanocrystals; (2) through P-type doping, accurate regulation and control on the electron mobility and the conductivity of the SnO2 nanocrystal are realized; and (3) the SnO2 nanocrystalline thin film with the conductivity and mobility being precisely adjustable in a large range is used as an electron transport layer, and is matched with organic hole transport layers with different hole mobility and conductivity, the electron transport layer is applied to the field of photoelectric devices such as quantum dot light emitting diodes and perovskite thin film solar cells, the electron and hole transport balance is realized, and the photoelectric device performance is improved. And the performance and the stability of the semiconductor photoelectric devices are improved.