The water bath preparation method of cu2znsns4 or cu2cdsns4 nanocrystalline film

A nanocrystalline and thin-film technology, applied in chemical instruments and methods, inorganic chemistry, tin compounds, etc., can solve the problems of device performance degradation, waste of raw materials, and increased investment cost of battery production, achieving low synthesis temperature, simple preparation method, low cost effect

Inactive Publication Date: 2011-12-14
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

However, the requirements of a high vacuum environment greatly increase the production investment cost of the battery; the substances deposited on the vacuum deposition chamber cause waste of raw materials; in the preparation of large-area Cu 2 ZnSnS 4 and Cu 2 CdSnS 4 For thin films, this method is difficult to ensure the uniformity of film thickness and chemical composition, resulting in a decrease in device performance

Method used

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  • The water bath preparation method of cu2znsns4 or cu2cdsns4 nanocrystalline film

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Embodiment 1

[0017] Add 200ml of deionized water, 0.5mmol of copper sulfate, 0.25mmol of zinc chloride, 0.25mmol of stannous chloride, and 1mmol of thioacetamide into the beaker in sequence, and after stirring evenly, add 0.3g of buffering agent edetate disodium and Add 3g of urea into the beaker; then hang the glass that has been ultrasonically cleaned with alcohol, acetone, and deionized water vertically in the beaker; add dilute hydrochloric acid solution to the beaker to adjust the pH value so that the pH of the solution is 2.5; seal the beaker, Place in a water bath and heat to 85 0 C; React for 150 minutes at 450 rev / min stirring speed; after the completion of the reaction, Cu will grow 2 ZnSnS 4 Nanocrystalline thin film glass in argon and hydrogen sulfide (5%) atmosphere 500 0 C annealed for 1h, and finally high-quality Cu 2 ZnSnS 4 nanocrystalline film.

Embodiment 2

[0019] Add 200ml of deionized water, 0.5mmol of copper acetate, 0.25mmol of cadmium chloride, 0.25mmol of stannous chloride, and 1mmol of thioacetamide into the beaker in turn. After stirring evenly, add 0.3g of buffering agent edetate disodium and Add 3g of urea into the beaker; then hang the glass that has been ultrasonically cleaned with alcohol, acetone, and deionized water vertically in the beaker; add dilute hydrochloric acid solution to the beaker to adjust the pH value so that the pH of the solution is 3.5; seal the beaker, Place in a water bath and heat to 85 0 C; React for 150 minutes at 450 rev / min stirring speed; after the completion of the reaction, Cu will grow 2 CdSnS 4 The glass of nanocrystalline film is 500 in the atmosphere of argon and hydrogen sulfide (5%) 0 C annealed for 1h, and finally high-quality Cu 2 CdSnS 4 nanocrystalline film.

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Abstract

The invention discloses a low-temperature preparation method of a Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film with low cost and high quality, comprising the following steps of: firstly adding a certain amount of copper sulphate, zinc chloride or cadmium chloride, stannous chloride and thioacetamide into a beaker with deionized water, letting glass which undergoes ultrasonic cleaning by the use ofalcohol, acetone and deionized water vertically suspend inside the beaker; adding dropwisely a diluted hydrochloric acid solution into the beaker to adjust the pH value and make the solution to stay in the acid condition; heating up and reacting for a certain time at a certain stirring rate, carrying out annealing treatment on the glass, on which the Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film grows, in Ar and H2S(5%) atmospheres to finally obtain the high-quality Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film. The invention has the following advantages: the nanocrystalline preparation method issimple; the synthesis temperature is low; the cost of precursor materials is low; and the nanocrystalline film prepared is uniform and compact. The Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film prepared in the invention can be used as an absorbed layer for photovoltaic devices or a good thermoelectric material.

Description

technical field [0001] The present invention relates to a kind of I that can be used as light absorbing layer of thin film photovoltaic cell 2 -II-IV-VI 4 Preparation process of semiconductor nanocrystalline thin film. Specifically, it involves a Cu 2 ZnSnS 4 or Cu 2 CdSnS 4 A water-bath preparation method for a nanocrystalline thin film. Background technique [0002] With the rapid development of the global economy, the problem of energy shortage has become increasingly prominent. Non-renewable resources such as coal, oil, and natural gas are decreasing day by day. The lack of energy hinders the economic development of various countries. Finding abundant, inexhaustible, safe and clean new energy has become an urgent problem facing mankind. Solar energy, which accounts for more than 99% of the earth's total energy, is inexhaustible, inexhaustible, and non-polluting, so it has become one of the new energy sources that scientists from all over the world are competing to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00C03C17/22
Inventor 李亮曹萌裴本花沈悦王林军
Owner SHANGHAI UNIV
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