359 results about "Cadmium chloride" patented technology

The invention relates to an electrothermal film and a manufacturing method thereof, belonging to the technical field of semiconductor heating. The electrothermal film is mainly prepared by adopting stannic chloride, titanium tetrachloride, stannic chloride, titanium trichloride, ferric chloride, antimony trichloride, calcium chloride, potassium chloride, cadmium chloride, stannic dioxide, stannictetroxide, hydrofluoric acid, boric acid, ethanol, isopropyl alcohol and inorganic water. By adopting the above formula, the mixture is mixed, stirred and heated to prepare into electrothermal film treating fluid, a semi-finished product of the electrothermal film is obtained by spraying the electrothermal film treating fluid at negative pressure on the electrothermal film carrier, and then silveroxide slurry is coated on the semi-finished product of the electrothermal film for baking to form a finished product of the electrothermal film. The electrothermal film has reasonable proportion andsimple manufacturing process, can be manufactured into various electrothermal film heating devices, has a working temperature capable of being up to 500 DEG C, and has wider application range. The electrothermal film of the invention also has the function of far infrared radiation, can play a role of physical therapy and health care to human body, and can help improve the quality and output of agricultural products.

The invention provides a seven-membered cucurbituril-rare earth metal linear tubular supramolecular polymer and a synthetic method. When cadmium chloride exists, the seven-membered cucurbituril-rare earth metal linear tubular supramolecular polymer is formed by seven-membered cucurbituril (Cucurbit [7] uril and Q [7]) and rare-earth metal salt (Ln (NO3)3 or LnCI3) in 6M hydrochloric acid solution. According to the seven-membered cucurbituril, dosing mole ratio of the rare-earth metal salt to the cadmium chloride ranges from 1:6 to 8:2-8, and mixture of the rare-earth metal salt and the cadmium chloride are heated and mixed evenly and stand for several days under normal temperature to form a target compound. The method has the advantages of being simple in the synthetic method, easy and simple to operate, high in productivity (between 60% and 80%), short in period and the like. Compared to pure seven-membered cucurbituril, the seven-membered cucurbituril-rare earth metal linear tubularsupramolecular polymer synthetized by the method has strong adsorption to methyl alcohol, ethanol and acetone.

A hydrothermal preparation method of a water-soluble ZnCdSe ternary quantum dot belongs to the nano technical field; the invention chooses zinc chloride or zinc Oxide as zinc source, sodium hydrogen selenide formed by selenium powder and sodium borohydride as selenium source, glutathione as stabilizer, leading the ZnSe precursor solution to be prepared under the protection of the nitrogen. The ZnSe precursor solution reacts in the hydrothermal environment to obtain the ZnSe quantum dot. The cadmium chloride or the cadmium Oxide chosen as cadmium source, and the glutathione chosen as the stabilizer are mixed together with the prepared ZnSe quantum dot to obtain the ZnCdSe precursor solution. The water-soluble ZnCdSe quantum dot is obtained by leading the ZnCdSe precursor solution to react in the hydrothermal environment. Due to the mild reaction condition, convenient operation and the simple equipment, the invention leads the water-soluble ZnCdSe quantum dot to be suitable for the industrial production with the better dispersion, better uniformity of the particle size and high fluorescent quantum efficiency. .

The invention relates to a process for preparing high-performance conducting fiber, which comprises first, preprocessing, washing out foreign matters on the surface of fiber, second, coursing, adopting coursing agent to immerse fiber, and to improve the surface structure of the fiber, leading the surface to be roughness which is beneficial for absorbing metallic ion, third, sensitizing, utilizing stannous chloride or cadmium chloride solution to immerse fiber, leading the surface of fiber to absorb a layer of tin ions and cadmium ions, thereby forming a layer of metal catalytic layer, fourth, chemically coating silver, fifth, solidifying, utilizing oxalic acid solution to immerse, and getting end products after drying. The invention is simple and is easy to be operated, compared with the traditional electric plating, conducting fiber which is prepared by the invention has excellent electrical conductivity property, specific surface area specific resistance reaches 2-10 Ohm, and the characters of the original fibers are kept, the hand feeling is soft, and the invention can be applied in various commingled yarn fabrics.

The invention discloses a method for water-phase microwave preparation of CdSeS quantum dots. The method provided by the invention comprises the following steps of 1, preparing a selenosulfate solution through the reaction of selenium powder and a sodium sulfite solution, 2, weighing cadmium chloride crystals, and carrying out dissolution and volume metering by deionized water to obtain a cadmium chloride solution, 3, adding a certain amount of mercaptopropionic acid into the cadmium chloride solution, 4, adjusting a pH value of the mixed solution obtained by the step 3 to a specific pH value by a sodium hydroxide solution, 5, feeding inert gas into the mixed solution having the specific pH value to remove oxygen, and adding the selenosulfate solution obtained by the step 1 into the oxygen-free mixed solution, 6, loading the mixed solution obtained by the step 5 into a teflon-made digestion tank, and heating for a reaction by a microwave digestion furnace, and 7, cooling the reaction products obtained by the step 6 to a room temperature, adding isopropanol into the cooled reaction products, carrying out purification, and drying by a freezer dryer to obtain solid powder of the CdSeS quantum dots. The method provided by the invention is fast and simple, has easily controllable technological parameters, has a low cost, realizes small sizes and even size distribution of the CdSeS quantum dots obtained by the method, and has a high fluorescent quantum yield. The CdSeS quantum dots obtained by the method can be utilized as a biological fluorescent label material through coupling with biomolecules and can also be utilized for metal ion detection.

The invention discloses a method for preparing water-soluble cadmium telluride (CdTe) quantum dots, and belongs to the field of nano-technology preparation. In the method, sodium tellurite serves as a tellurium source; cadmium chloride serves as a cadmium source; mercaptopropionic acid serves as a coordination agent; sodium hexametaphosphate serves as an auxiliary stabilizing agent; and the water-soluble CdTe quantum dots are prepared by only one step of reducing the sodium tellurite by using hydrazine hydrate in an aqueous phase system. The method has the characteristics of simple and practical operation, mild condition and low toxicity; and quantum dots with different sizes and emission wavelengths can be obtained by a method for controlling a reaction time.

The invention discloses a water heat preparing method of water-soluble CdTe quantum point in nanometer technical domain, which comprises the following steps: choosing cadmium chloride or cadmium oxide compound as cadmium source; choosing sodium hydride telluride formed by tellurium powder and sodium borohydride as tellurium source; choosing mercapto group amine compound as stabilizer; producing CdTe fore-body solution under the protection of nitrogen; reacting under water-heating environment; getting the product. This invention possesses warm reacting condition, convenience function, simple device, good dispersibility, even particle size and high fluorescence quantum efficiency, which can be fit for industrial production.

The invention relates to magnesium alloy surface treatment technology, in particular to a direct chemical nickel-phosphate plating solution and chemical nickel-phosphate plating coating process for magnesium alloy, belonging to the field of magnesium alloy surface treatment. A chemical nickel-phosphate plating coating takes nickel acetate or nickel sulfate as main salts, phosphinic acid as a reducing agent, sodium citrate, glycine or sodium succinate as a complexing agent, ammonium bifluoride as a corrosion inhibitor, sodium acetate as a buffering agent and cadmium chloride as a stabilizer, and the plating application temperature is 80-95 DEG C. The chemical nickel-phosphate plating coating process comprises the steps: organic solvent oil removal, blow-drying, alkaline washing, water washing, chemical nickel-phosphate plating, water washing and roasting in sequence. According to the process, the problems that the chemical nickel-phosphate alloy plating coating technology in the prior can not be directly applied to magnesium alloy and causes harm to the environment can be solved.

In one embodiment, the present application discloses a cell culture medium for culturing cell lines suitable for producing a therapeutic protein, comprising an amino acid selected from a group consisting of L-arginine, L-asparagine, L-proline, L leucine and L hydroxyproline and a mixture thereof; a vitamin selected from a group consisting of ascorbic acid Mg²⁺ salt, biotin, pyridoxine HCL, folic acid, riboflavin and D-calcium pantothenate, and a mixture thereof; an element selected from a group consisting of ammonium meta vanadate, sodium meta vanadate, germanium dioxide, barium acetate, aluminum chloride, rubidium chloride, cadmium chloride, ammonium molybedate, stannous chloride, cobalt chloride, chromium sulfate, silver nitrate, sodium metasilicate, zinc sulfate, manganese sulfate H₂O, manganous chloride, ferric nitrate 9H₂O, ferrous sulfate 7H₂O, ferric ammonium citrate, magnesium chloride anhydrous, and magnesium sulfate anhydrous, and a mixture thereof; a nucleoside selected from a group consisting of uridine and cystidine; a sugar selected from a group consisting of galactose, mannose and N-Acetyl-D-Mannosamine; and a triple buffering system comprising sodium carbonate, sodium bicarbonate and HEPES; wherein the cell culture medium is animal component-free, plant component-free, serum-free, growth factors-free, recombinant protein-free, lipid-free, steroid-free, and free of plant or animal hydrolysates and/or extracts.

The invention discloses a screening method for heavy metal cadmium adsorption mutants of Chlamydomonas reinhardtii. The screening method comprises: selecting a suitable screening concentration for heavy metal cadmium adsorption mutants according to the influence of different cadmium chloride concentrations on the growth of Chlamydomonas reinhardtii; Transformation to obtain Chlamydomonas reinhardtii mutants; screening out heavy metal cadmium adsorption mutants of Chlamydomonas reinhardtii, the screening of heavy metal cadmium adsorption mutants of Chlamydomonas reinhardtii includes screening heavy metal cadmium sensitive mutants and screening heavy metal cadmium resistant mutants; identification screening Mutant genes of heavy metal cadmium adsorption mutants of Chlamydomonas reinhardtii. The invention achieves the technical effect of being able to obtain a large amount of Chlamydomonas heavy metal cadmium adsorption mutants simply and efficiently.

The invention discloses a method of synthesizing a zinc oxide/cadmium sulfide heterojunction nanorod array by virtue of two-step ion exchange in a liquid phase. The method comprises the following steps: (1) adding a ZnO nanorod array used as a raw material into 30mL of 0.5M thioacetamide (TAA) aqueous liquor, maintaining for 2 hours at 90 DEG C in a reaction kettle, and cleaning the ZnO nanorod array to obtain a ZnO/ZnS heterojunction nanorod array; (2) adding the ZnO/ZnS heterojunction nanorod array into 30mL of 0.1M cadmium chloride (CdCl2) aqueous liquor, maintaining for 9 hours at 120 DEG C in the reaction kettle, and then cleaning the ZnO/ZnS heterojunction nanorod array to obtain the ZnO/CdS heterojunction nanorod array. The ZnO/CdS heterojunction nanorod array provided by the invention is uniform in size, and the method is simple to operate and mild in condition and is a novel method capable of massively synthesizing the ZnO/ZnS heterojunction nanorod array with simplicity and convenience in operation.

The invention provides a preparation method of a CdS/g-C3N4 dual-nanosheet composite photocatalyst. The method comprises, through a gas template method, mixing and grinding a gas template and carbon nitride precursor to sinter within one step in inert atmosphere to obtain a g-C3N4 nanosheet, then adding the prepared g-C3N4 nanosheet into diethylenetriamine (DETA) solution containing cadmium chloride hemihydrate (CdCl2*2.5H2) and powdered sulfur (S) to react under oil bath heating to prepare a CdS/g-C3N4 material in a special structure, namely, a dual-nanosheet structure. The preparation methodof the CdS/g-C3N4 dual-nanosheet composite photocatalyst applies a semiconductor compositing method; when applied to photocatalytic H2O2 production, CdS/g-C3N4 dual-nanosheets can be highly effectivein catalytic activity effectively improve the photocatalytic activity of g-C3N4 nanosheets as well as effectively weaken photo-corrosion of CdS, thereby having a good application prospect in the photocatalytic fields such as photocatalytic hydrogen production, CO2 reduction and organic pollutant degradation.

A process for preparing the water-soluble shell quantum point of CdSe/CdS in water phase features that the cadmium chloride (or perchlorate) is used as its raw material.

The invention relates to a preparation technology of a photocatalyst, and in particular relates to a preparation method of a photocatalyst taking silicon carbide as a carrier. The preparation method comprises the following steps of: (1) weighing the silicon carbide, adding a sulfourea solution into the weighed silicon carbide, evenly stirring, dripping a cadmium chloride solution into the mixture to obtain a mixed solution, adjusting the pH of the mixed solution to be 8-10 by an NaOH solution, and carrying out reflux at 100 DEG C for 8h-12h; (2) after reflux, respectively washing the sample by distilled water and ethyl alcohol, drying the sample for 3h-5h at 60 DEG C, and then drying the sample again to constant weight at 120 DEG C to obtain the photocatalyst taking the silicon carbide as the carrier, wherein the content of cadmium sulfide in the photocatalyst accounts for 9%-50% of the total weight of the photocatalyst. The photocatalyst prepared by the method is good in stability, has good thermal conductivity, can effectively transfer reaction heat in catalytic reaction, and has good mechanical strength and hardness and good thermal conductivity and electrical conductivity.

The invention discloses a cadmium sulfide ultrathin nanometer flaky material preparation method and application thereof. The preparation method comprises the steps of using cadmium chloride, powdered sulfur and diethylene triamine as raw materials to prepare a cadmium sulfide-amine hybridized nanosheet; then mixing the nanosheet, L-cysteine, water and the diethylene triamine to obtain uniform-distribution cadmium sulfide ultrathin nanometer flaky material water solution under an ultrasonic effect. A nanometer flaky material disclosed by the invention has the size of 100 to 300 nanometers, and the thickness of 3 to 5 nanometers. A two-step synthesizing method of the cadmium sulfide ultrathin nanometer flaky material disclosed by the invention has the characteristics of low cost, low synthesizing temperature, high product purity, ultrathin nanosheet, certain quantum size effect, stable structure and obvious advantage on phototcatalytic hydrogen production.

The invention is opened a method to prepare the cadmium sulfide nanocrystal. The cadmium chloride is the cadmium source, the thiourea is the sulfur source and the diphenyl amithiozone is the modifying agent, the hexamethylene diamine is the solvent. The product of CdS nanocrystal is the single crystal, the ratio of the length to the diameter is above 250.

The invention discloses a quantum dot-photon crystal composite film synthesis method, which specifically comprises: synthesizing cadmium telluride quantum dots through an aqueous solution synthesis method by using tellurium powder, sodium borohydride and cadmium chloride as raw materials and using mercaptopropionic acid as a stabilizer, preparing quantum dot materials having various colors and covering whole color band by controlling a reaction time, preparing silica microspheres through a stober method, preparing a photon crystal film through a vertical sedimentation self-assembly method, and repeatedly adding the quantum dots onto the photon crystal film in a dropwise manner to prepare the quantum dot-photon crystal composite film. Compared to the quantum dot film, the prepared quantum dot-photon crystal composite film of the present invention has the following advantage that the quantum dot material generates heat when the quantum dot material emits fluorescence due to the three-dimensional gap structure of the photon crystal in the case of the same amount of the quantum dot material so as to substantially improve the heat exchange efficiency with the outside, such that the fluorescence intensity is increased.

The invention discloses a CeO2 (Cerium Oxide) nano-particle/CdS (Cadmium Sulfide) nano-rod composite photo-catalyst as well as a preparation method and an application thereof. The CeO2 nano-particle/CdS nanorod composite photo-catalyst takes a CdS nano-rod of a one-dimensional structure as a substrate, CeO2 nano-particles are decorated on the surface of the CdS nano-rod. The preparation method comprises the steps of enabling sodium diethyldithiocarbamate and CdCl2.2.5H2O (Cadmium Chloride) to react to obtain cadmium diethyldithiocarbamate; then, adding a solvent to carry out solvothermal reaction to obtain the CdS nano-rod; ultrasonically dispersing the CdS nano-rod and the Ce(NO3)3.6H2O (Cerium(III) Nitrate Hexahydrate) in absolute ethyl alcohol to obtain a suspension; and dripping deionized water into the suspension to carry out solvothermal reaction by dropping. The CeO2 nano particle/CdS nanorod composite photo-catalyst provided by the invention has the advantages of high catalytic efficiency, strong resistance to corrosion, low cost and the like, thereby being applicable to dye degradation.

The invention relates to an electrogenerated chemiluminescence sensor with high sensitivity in cancer cell detection and a fabrication method of the sensor. The fabrication method comprises the following steps of (1) nanometer titania material synthesis: titanous sulfate reacts with ethylene diamine tetraacetic acid under magnetic stirring to produce nanometer titania; (2) composite nano material synthsis: titania nano particles sequentially reacts with a sodium sulphide solution and a cadmium chloride solution to be dissolved in ionic liquid; (3) gold nano particle synthesis: a sodium citrate solution reacts with a chloroauric acid solution to obtain gold nano particles; (4) assembling of the sensor: the gold nano particles are dropped into the surface of an indium tin oxide (ITO) electrode to be placed in a nitrogen condition; and cancer cell antibodies are decorated on the surface of the electrode to be placed in an incubator to be reserved. According to the number of cancer cells combined on the antibodies and linear changes of intensity of electrogenerated chemiluminescence, detection for the cancer cells is achieved. The electrogenerated chemiluminescence sensor and the fabrication method have the advantages of being simple in operation, high in reacting speed, good in effect, strong in renewability, strong in selectivity, and low in cost.

The invention discloses organic blue light emitting materials and a preparation method thereof, relating to organic light emitting materials and preparation methods thereof. The organic blue light emitting materials are used for solving the problems of low brightness and light emitting efficiency of the existing organic blue light emitting materials. The molecular formulae of the organic blue light emitting materials are C15H15N3CdO7S and C19H23N5CdO5S. The preparation method of the organic blue light emitting materials comprises the following steps of: (1) preparing 4-[(8-hydroxy-5-quinolinyl)azo] benzenesulfonic acid; and (2) preparing coordination polymers: respectively dissolving ligand and cadmium chloride into a solvent, mixing and adding an organic base, stirring for 1 hour at room temperature, putting a mixture in a reaction kettle with a polytetrafluoroethylene inner liner, and carrying out temperature programming to 100 DEG C for 100 hours, thereby obtaining orange flaky crystals. The products prepared by the preparation method disclosed by the invention are single crystals with intact crystal forms; and shown by light emitting performance tests, the organic blue light emitting materials prepared by the preparation method are all of blue fluorescence and have higher thermal stability and good film forming characteristics. The yield of the products prepared by the preparation method is high and can be more than 55%.

The invention discloses a preparation method of water-soluble CdSe quantum dots and belongs to the field of nanotechnology preparation. According to the method, sodium selenite is used as a selenium source, cadmium chloride is used as a cadmium source, mercaptopropionic acid and sodium hexametaphosphate are used as double complexing agents, and hydrazine hydrate deoxidizes the sodium selenite in an aqueous solution to prepare the water-soluble CdSe quantum dots in a one-step mode. The preparation method of the water-soluble CdSe quantum dots is simple and easy to operate, mild in conditions and suitable for batch preparation and large-scale synthesis. The prepared CdSe quantum dots are strong in fluorescent radiation in green light areas, and the radiation intensity can be controlled by controlling reaction time.

The invention discloses a low-temperature preparation method of a Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film with low cost and high quality, comprising the following steps of: firstly adding a certain amount of copper sulphate, zinc chloride or cadmium chloride, stannous chloride and thioacetamide into a beaker with deionized water, letting glass which undergoes ultrasonic cleaning by the use ofalcohol, acetone and deionized water vertically suspend inside the beaker; adding dropwisely a diluted hydrochloric acid solution into the beaker to adjust the pH value and make the solution to stay in the acid condition; heating up and reacting for a certain time at a certain stirring rate, carrying out annealing treatment on the glass, on which the Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film grows, in Ar and H2S(5%) atmospheres to finally obtain the high-quality Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film. The invention has the following advantages: the nanocrystalline preparation method issimple; the synthesis temperature is low; the cost of precursor materials is low; and the nanocrystalline film prepared is uniform and compact. The Cu2ZnSnS4 or Cu2CdSnS4 nanocrystalline film prepared in the invention can be used as an absorbed layer for photovoltaic devices or a good thermoelectric material.

The invention provides a cadmium sulfide target material preparing method. The method comprises the steps that cadmium sulfide powder is loaded in a mold to be subjected to prepressing molding, and prepressed cadmium sulfide powder is obtained; the prepressed cadmium sulfide powder is loaded in a hot-press sintering furnace, hot-press vacuum sintering is performed, and a cadmium sulfide target material is obtained. According to the method, cadmium sulfide target material preparing, sintering and pressing are simultaneously performed on same equipment in a same technology, the middle links and operation steps are few, and pollution to the target material and environment is little; by taking the high-purity cadmium sulfide powder as the raw material, cadmium chloride does not need to serve as cosolvent, and the purity of the target material is high. The invention further provides a cadmium sulfide target material preparing device.