Production of nanometer wire with cadmium sulfide

A nanowire and cadmium sulfide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of slow application process of nanowires, unverifiable performance, and unguaranteed purity, and achieve the goal of using The effect of simple equipment, uniform size distribution and high purity

Inactive Publication Date: 2006-08-16
ZHEJIANG UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

But so far, because the size uniformity and purity of CdS nanowires prepared by these methods cannot be guaranteed, the research on its performance has not been verified, and the application process of nanowires is slow.

Method used

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  • Production of nanometer wire with cadmium sulfide
  • Production of nanometer wire with cadmium sulfide

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0016] 1) Put 1mmol of cadmium chloride, 3mmol of thiourea, and 0.1mmol of diphenylthizone into a reaction kettle lined with polytetrafluoroethylene, then add 50ml of hexamethylenediamine, and close the reaction kettle;

[0017] 2) Keep the reactor at 180°C for 144 hours;

[0018] 3) Take out the yellow precipitate in the reactor, then alternately and repeatedly wash with deionized water and ethanol;

[0019] 4) The cleaned product is fully dried in a vacuum oven at 50°C.

[0020] The SEM photographs and component analysis of the prepared CdS nanowires are as follows: figure 1 As shown, the diameter distribution of CdS nanowires is very uniform from the enlarged image in the upper right corner of the SEM image. It can be seen from the composition analysis spectrum that the purity of CdS nanowires is extremely high, and the weight percentages of S and Cd are 22.39% and 77.61%, respectively. The peak of Cu is produced by the copper pillar of the sample stage. High-resolution ...

example 2

[0022] The steps are the same as in Example 1, except that the thiourea added in step 1) is 2.5 mmol, and the reaction temperature of the reactor is 250° C. The diameter distribution of the prepared CdS nanowires is also very uniform, and the weight percentages of S and Cd are 20.42% and 79.58%, respectively.

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Abstract

The invention is opened a method to prepare the cadmium sulfide nanocrystal. The cadmium chloride is the cadmium source, the thiourea is the sulfur source and the diphenyl amithiozone is the modifying agent, the hexamethylene diamine is the solvent. The product of CdS nanocrystal is the single crystal, the ratio of the length to the diameter is above 250.

Description

technical field [0001] The invention relates to a method for preparing cadmium sulfide nanowires. technical background [0002] Group II and VI semiconductor compounds, because of their excellent physical properties, are widely used in the fields of light-emitting and display devices, laser and infrared detection, photosensitive sensors and photocatalysis, and have received widespread attention from material scientists. With the development of modern microelectronics technology, the miniaturization of various optoelectronic devices has put forward higher requirements for material science, especially the study of low-dimensional materials as the main content of nanomaterials science is one of the most active and hottest disciplines in current materials research. One, such as quantum dots, quantum wires, etc. Cadmium sulfide (CdS) is a widely studied material among II and VI compound semiconductors. It is a direct band gap semiconductor material, and the band gap of room temp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/50C30B29/62
Inventor 赵高凌李红韩高荣杨金坚
Owner ZHEJIANG UNIV
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