Cadmium sulfide target material preparing method and device

A preparation device and cadmium sulfide technology, which is applied in the field of cadmium sulfide target preparation, can solve the problems of many intermediate links and operation steps, the reduction of the purity of cadmium sulfide target material, and the toxicity of cadmium sulfide dust, so as to achieve less intermediate links and operation steps , It is conducive to large-scale production and the effect of improving the purity of the target material

Active Publication Date: 2016-06-22
FIRST RARE MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the existing methods for preparing cadmium sulfide targets, since cadmium chloride is used as a cosolvent, although chlorine will volatilize during the sintering process, some parts will still remain in the target and become impurity elements, and the purity of the target is low; Moreover, the preparation of cadmium sulfide tar

Method used

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preparation example Construction

[0034] The invention provides a method for preparing a cadmium sulfide target material, comprising the following steps: loading cadmium sulfide powder into a mold for pre-pressing to obtain pre-pressed cadmium sulfide powder; Put it into a hot-press sintering furnace, and hot-press and vacuum sinter to obtain a cadmium sulfide target.

[0035] Use a hot isostatic graphite mold to pre-press the cadmium sulfide powder with a purity of 4-5N and a powder particle size of 1 micron to 200 microns, and combine one or more layers of pre-pressed cadmium sulfide powder together with the graphite mold Put them together into a hot-press sintering furnace. If it is multi-layer pre-pressed cadmium sulfide powder, graphite gaskets are required to separate the cadmium sulfide powder. Pump the vacuum down to below 5Pa; heat the cadmium sulfide powder after pre-pressing in the furnace body, first raise the temperature to 350-550°C at a rate of 8-12°C / min, and keep it warm for 30-60min; Raise t...

Embodiment 1

[0038] Weigh 1350g of 5N cadmium sulfide with a particle size of 200 microns and put it into a graphite mold with a size of 166*166mm. Pump the vacuum to below 600Pa, and then turn on the Roots pump to evacuate until the vacuum degree is less than 5Pa. Turn on the temperature control system, so that the temperature in the furnace starts to rise to 350°C at a rate of 8°C / min, and hold for 30 minutes, then continue to heat up to 650°C at a rate of 5°C / min, and start holding for 30 minutes. The hydraulic station provides vertical pressure to the graphite mold in the furnace through the movement of the pressure head. The pressure increase rate is 3T / min. When the pressure slowly increases to 85T, stop the pressure increase, close the hydraulic station, continue to keep warm at 650°C for 45min and keep the pressure constant At 85T, after the heat preservation is over, the furnace body begins to cool down naturally. When the temperature drops below 500°C, start to slowly reduce the ...

Embodiment 2

[0040]Weigh two parts of 1450g of 4N cadmium sulfide with a particle size of 100 microns, and put one part into the bottom layer of the graphite mold that has been wiped clean. The size of the mold is 175*140mm. Gasket, and then put the second weighed cadmium sulfide raw material on the graphite gasket, cold pre-press molding again, put the graphite mold into the hot-press sintering furnace, close the furnace door, and first extract the cadmium sulfide through the slide valve vacuum pump Vacuum to below 600Pa, and then turn on the Roots pump to evacuate until the vacuum degree is less than 5Pa. Turn on the temperature control system, so that the temperature in the furnace starts to rise to 400°C at a rate of 10°C / min, and hold for 40 minutes, then continue to heat up to 750°C at a rate of 7°C / min, and start to hold for 40 minutes, and turn on the hot-press sintering furnace. The hydraulic station provides vertical pressure to the graphite mold through the downward movement of ...

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PUM

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Abstract

The invention provides a cadmium sulfide target material preparing method. The method comprises the steps that cadmium sulfide powder is loaded in a mold to be subjected to prepressing molding, and prepressed cadmium sulfide powder is obtained; the prepressed cadmium sulfide powder is loaded in a hot-press sintering furnace, hot-press vacuum sintering is performed, and a cadmium sulfide target material is obtained. According to the method, cadmium sulfide target material preparing, sintering and pressing are simultaneously performed on same equipment in a same technology, the middle links and operation steps are few, and pollution to the target material and environment is little; by taking the high-purity cadmium sulfide powder as the raw material, cadmium chloride does not need to serve as cosolvent, and the purity of the target material is high. The invention further provides a cadmium sulfide target material preparing device.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and in particular relates to a method and a device for preparing a cadmium sulfide target material. Background technique [0002] Cadmium sulfide is an inorganic compound of sulfur and cadmium with the chemical formula CdS. It is an N-type optoelectronic semiconductor material, belonging to II-VI group compound semiconductors. The molecular weight is 144.76, which belongs to the hexagonal lattice structure, and the lattice constant is 5.86×10 -10 m, melting point 1750°C, boiling point 980°C. The band gap is 2.41 electron volts, and the mobility of electrons and holes is 2×10 -2 and 2×10 -3 Square meter / volt second, relative permittivity 11.6. [0003] The outstanding advantage of the cadmium sulfide photoconductor is that the potential difference of the electrostatic latent image is large, and the image contrast of the copied image is large. Because of the insulating film on the sur...

Claims

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Application Information

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IPC IPC(8): C04B35/547C04B35/645
CPCC04B35/547C04B35/6455C04B2235/5427C04B2235/5436C04B2235/6581C04B2235/77
Inventor 胡智向朱刘刘留
Owner FIRST RARE MATERIALS CO LTD
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