Preparation method of photocatalyst taking silicon carbide as carrier

A photocatalyst, silicon carbide technology, applied in the direction of physical/chemical process catalysts, chemical instruments and methods, chemical/physical processes, etc., to achieve good thermal conductivity, good thermal conductivity, good mechanical strength and hardness

Inactive Publication Date: 2013-09-11
TAIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve many problems existing in the photocatalyst loaded with cadmium sulfide, the present invention provides a method for preparing a photocatalyst with silicon carbide as a carrier

Method used

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  • Preparation method of photocatalyst taking silicon carbide as carrier

Examples

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Embodiment 1

[0019] Take 9% cadmium sulfide as an example to illustrate how to obtain thiourea and chromium chloride. The calculation principle of other embodiments is the same as that of embodiment 1.

[0020] A method for preparing a photocatalyst with silicon carbide as a carrier, the preparation steps include:

[0021] (1) Weigh 40mg (0.001mol) of silicon carbide, add thiourea solution (the mass of thiourea is 2.09mg, 0.0000275mol), stir evenly, and then drip into the chromium chloride solution (the mass of chromium chloride is 4.06 mg, 0.0000275mol), to obtain the mixed solution, then adjust the pH of the mixed solution to 8 by 1mol / L NaOH solution, and reflux at 100°C for 9h; the stirring step: use a magnetic stirrer to stir at 300r / min for 0.8h;

[0022] (2) The refluxed samples were washed with distilled water and ethanol, dried at 60°C for 5 hours, and then dried at 120°C to a constant weight to obtain a photocatalyst supported by silicon carbide. The photocatalyst was sulfided The con...

Embodiment 2

[0024] A method for preparing a photocatalyst with silicon carbide as a carrier, the preparation steps include:

[0025] (1) Weigh silicon carbide, add thiourea solution, stir well, then drop chromium chloride solution to obtain a mixed solution, then adjust the pH of the mixed solution to 9 with 1mol / L NaOH solution, and reflux at 100°C for 12h; Said stirring step: stirring with a magnetic stirrer at 800r / min for 0.5h;

[0026] (2) The refluxed samples were washed with distilled water and ethanol respectively, dried at 60°C for 4h, and then dried at 120°C to constant weight to obtain a photocatalyst with silicon carbide as the carrier. The photocatalyst was sulfided The content of cadmium is 15% of the total weight of the photocatalyst.

Embodiment 3

[0028] A method for preparing a photocatalyst with silicon carbide as a carrier, the preparation steps include:

[0029] (1) Weigh out silicon carbide, add thiourea solution, stir evenly, then drop chromium chloride solution to obtain a mixed solution, then adjust the pH of the mixed solution to 10 with 1mol / L NaOH solution, and reflux at 100°C for 10h; Said stirring step: using a magnetic stirrer to stir at 600r / min for 0.7h;

[0030] (2) The refluxed samples were washed with distilled water and ethanol, dried at 60°C for 3 hours, and then dried at 120°C to constant weight, to obtain a photocatalyst with silicon carbide as the carrier. The photocatalyst was sulfided The content of cadmium is 25% of the total weight of the photocatalyst.

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Abstract

The invention relates to a preparation technology of a photocatalyst, and in particular relates to a preparation method of a photocatalyst taking silicon carbide as a carrier. The preparation method comprises the following steps of: (1) weighing the silicon carbide, adding a sulfourea solution into the weighed silicon carbide, evenly stirring, dripping a cadmium chloride solution into the mixture to obtain a mixed solution, adjusting the pH of the mixed solution to be 8-10 by an NaOH solution, and carrying out reflux at 100 DEG C for 8h-12h; (2) after reflux, respectively washing the sample by distilled water and ethyl alcohol, drying the sample for 3h-5h at 60 DEG C, and then drying the sample again to constant weight at 120 DEG C to obtain the photocatalyst taking the silicon carbide as the carrier, wherein the content of cadmium sulfide in the photocatalyst accounts for 9%-50% of the total weight of the photocatalyst. The photocatalyst prepared by the method is good in stability, has good thermal conductivity, can effectively transfer reaction heat in catalytic reaction, and has good mechanical strength and hardness and good thermal conductivity and electrical conductivity.

Description

technical field [0001] The invention relates to a preparation process of a photocatalyst, in particular to a preparation method of a photocatalyst with silicon carbide as a carrier. Background technique [0002] Among many semiconductor nanomaterials, CdS (cadmium sulfide) nanoparticles have attracted great attention of many scientists due to their excellent properties. CdS is a typical Ⅱ-Ⅵ direct bandgap semiconductor compound, and its forbidden band width is 2.42eV at room temperature. By using various methods to control the morphology, particle size and particle size distribution of CdS nanoparticles, materials with different photoelectric properties can be obtained, which are widely used in many fields. However, CdS itself is easy to agglomerate, and it is prone to corrosion under light conditions, which affects the activity and stability of the catalyst. In the process of photocatalytic degradation of organic wastewater, CdS is generally supported on carriers such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/224
Inventor 白书立李换英贾文平管玉江蒋胜韬
Owner TAIZHOU UNIV
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