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PEI (polyethyleneimine) based high-efficiency perovskite quantum dot light-emitting thin film and preparation method thereof

A technology of quantum dot light-emitting and perovskite, which is applied in the fields of light-emitting materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of low fluorescence quantum yield of perovskite quantum dot light-emitting films and achieve crystalline properties. The effect of enhancement, prolongation of fluorescence lifetime, and enhancement of fluorescence quantum yield

Inactive Publication Date: 2016-06-29
JILIN UNIV
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Problems solved by technology

[0005] In order to solve the problem of low fluorescence quantum yield of perovskite quantum dot luminescent film in the prior art, the present invention proposes a method for preparing perovskite quantum dot luminescent film with high fluorescence quantum yield, and at the same time designs a new Structure

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  • PEI (polyethyleneimine) based high-efficiency perovskite quantum dot light-emitting thin film and preparation method thereof
  • PEI (polyethyleneimine) based high-efficiency perovskite quantum dot light-emitting thin film and preparation method thereof
  • PEI (polyethyleneimine) based high-efficiency perovskite quantum dot light-emitting thin film and preparation method thereof

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Embodiment

[0032] 1. The preparation scheme of PEI-based high-efficiency perovskite quantum dot luminescent film is as follows:

[0033] Step 1. 10nm red light inorganic perovskite CsPbBrI 2 Preparation of quantum dots. The prepared inorganic perovskite CsPbBrI 2 The peak of quantum dots is around 650nm. Synthesis was carried out according to previously published methods. In order to synthesize the oleate solution of cesium, cesium carbonate (0.8g), oleic acid (Oleicacid is called for short OA, 2.5ml), octadecene (Octadecene, called for short ODE, 30ml) is added in the three-necked flask of 100ml, and It was degassed and dried under vacuum at a temperature of 120° C. for 1 hour. The reaction solution was heated to 150° C. under nitrogen until the solution was clear. 10ml octadecene (Octadecene, ODE for short), 0.115g lead iodide (PbI 2 ) and 0.046g lead bromide (PbBr 2 )) into a 50 ml three-neck bottle, dry and degas at 120°C in vacuum for 1 hour, and dry 1 ml of oleic acid (Oleic...

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Abstract

The invention mainly relates to a novel light-emitting thin film, and particularly relates to a PEI (polyethyleneimine) based high-efficiency perovskite quantum dot light-emitting thin film and a preparation method thereof. PEI and ZnO are used as electron transporting layers; and the perovskite quantum dot light-emitting thin film is used as a fluorescent layer. The PEI based high-efficiency perovskite quantum dot light-emitting thin film structurally comprises a substrate (1) formed by an ITO (indium tin oxide) thin film, a ZnO layer (2) deposited on the substrate, a PEI layer (3) spin-coated on a ZnO nanocrystalline thin film, and perovskite quantum dots (4) spin-coated on the ZnO nanocrystalline thin film coated with PEI, wherein the ZnO layer and the PEI layer are combined into an electron migration layer together; and the inorganic cesium lead halide perovskite quantum dots are used as a light-emitting layer (4). Compared with fluorescence quantum yield of a perovskite quantum dot light-emitting thin film prepared by an existing process, fluorescence quantum yield of the perovskite quantum dot light-emitting thin film prepared by the preparation method disclosed by the invention can be improved by 2 to 3 times.

Description

technical field [0001] The invention relates to the application of a novel material in a luminescent film. The invention mainly relates to a novel luminescent film, in particular to a high-efficiency perovskite quantum dot luminescent film based on PEI and a preparation method thereof. technical background [0002] Perovskite quantum dots have outstanding characteristics such as solution preparation, easy processing, adjustable color, and high quantum yield. They have broad application prospects in optoelectronic devices such as light-emitting diodes, lasers, displays, and solar cells. As a new type of luminescent material, it has the characteristics of narrow luminescence peak and high fluorescence conversion rate, so it has a good application prospect in the field of luminescent thin films. [0003] In the current preparation process, after the perovskite quantum dot solution is prepared into a perovskite quantum dot light-emitting thin film, there is a problem that the f...

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Application Information

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IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56C09K11/66
CPCC09K11/665H10K85/111H10K50/00H10K50/115H10K71/00H10K85/50
Inventor 张宇陈真王鹤林张晓宇吴华于伟泳张铁强
Owner JILIN UNIV
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